30 V, 65 A, Single N Channel, u8FL Power MOSFET

NTTFS4C06N
Power MOSFET
30 V, 67 A, Single N−Channel, m8FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
http://onsemi.com
V(BR)DSS
RDS(on) MAX
4.2 mW @ 10 V
30 V
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
N−Channel MOSFET
D (5−8)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
18
A
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
Power Dissipation RqJA
(Note 1)
TA = 25°C
PD
2.16
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
25.6
A
Continuous Drain
Current RqJA (Note 2)
TA = 85°C
S (1,2,3)
18.5
TA = 25°C
PD
4.4
W
TA = 25°C
ID
11
A
TA = 85°C
8
Power Dissipation
RqJA (Note 2)
TA = 25°C
PD
0.81
W
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
ID
67
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
31
W
TA = 25°C, tp = 10 ms
IDM
166
A
TJ,
Tstg
−55 to
+150
°C
IS
28
A
Pulsed Drain Current
TC = 85°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
MARKING DIAGRAM
1
S
S
S
G
1
WDFN8
(m8FL)
CASE 511AB
4C06
A
Y
WW
G
4C06
AYWWG
G
D
D
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
49
Drain to Source dV/dt
dV/dt
7
V/ns
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 37 Apk,
L = 0.1 mH, RG = 25 W) (Note 3)
EAS
68
mJ
TL
260
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
G (4)
13
TA = 85°C
Steady
State
67 A
6.1 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Power Dissipation
RqJA ≤ 10 s (Note 1)
ID MAX
°C
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS4C06NTAG
WDFN8
(Pb−Free)
1500 / Tape &
Reel
NTTFS4C06NTWG
WDFN8
(Pb−Free)
5000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 20 A, EAS = 20 mJ.
© Semiconductor Components Industries, LLC, 2014
February, 2014 − Rev. 1
1
Publication Order Number:
NTTFS4C06N/D
NTTFS4C06N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
4.1
Junction−to−Ambient – Steady State (Note 4)
RqJA
58
Junction−to−Ambient – Steady State (Note 5)
RqJA
154.3
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
RqJA
28.3
Unit
°C/W
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS = 0 V, ID(aval) = 12.6 A,
Tcase = 25°C, ttransient = 100 ns
34
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
V
14.4
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.3
3.8
mV/°C
VGS = 10 V
ID = 30 A
3.4
4.2
VGS = 4.5 V
ID = 30 A
4.9
6.1
mW
Forward Transconductance
gFS
VDS = 1.5 V, ID = 15 A
58
S
Gate Resistance
RG
TA = 25°C
1.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
VGS = 0 V, f = 1 MHz, VDS = 15 V
1683
3366
841
1682
40
Capacitance Ratio
CRSS/CISS
Total Gate Charge
QG(TOT)
11.6
16.2
Threshold Gate Charge
QG(TH)
2.6
3.6
Gate−to−Source Charge
QGS
4.7
6.6
Gate−to−Drain Charge
QGD
4.0
5.6
Gate Plateau Voltage
VGP
3.1
Total Gate Charge
pF
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 30 A
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
0.023
26
nC
V
36
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTTFS4C06N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
10
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
32
tf
5.0
td(ON)
8.0
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
ns
18
28
ns
24
3.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.8
TJ = 125°C
0.63
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
1.1
V
34
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
17
ns
17
22
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
3
NTTFS4C06N
TYPICAL CHARACTERISTICS
3.4 V
3.6 V
80
TJ = 25°C
4.0 V to 10 V
50
3.0 V
40
30
2.8 V
20
2.2 V
10
2.6 V
1
1.5
2
2.5
40
30
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Figure 2. Transfer Characteristics
ID = 30 A
0.014
0.012
0.010
0.008
0.006
0.004
4.0
5.0
6.0
7.0
8.0
9.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
10
5
0.0060
TJ = 25°C
0.0055
VGS = 4.5 V
0.0050
0.0045
0.0040
VGS = 10 V
0.0035
0.0030
0.0025
0.0020
0.0015
0.0010
10
20
30
40
50
60
70
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
10000
VGS = 0 V
ID = 30 A
VGS = 10 V
TJ = 150°C
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
0
TJ = −55°C
Figure 1. On−Region Characteristics
0.016
1.5
TJ = 25°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.018
1.6
TJ = 125°C
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.020
0.002
3.0
50
0
3
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0.5
60
10
2.4 V
0
0
VDS = 5 V
70
3.2 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
60
1.4
1.3
1.2
1.1
1
0.9
1000
TJ = 125°C
100
TJ = 85°C
0.8
0.7
−50
−25
0
25
50
75
100
125
150
10
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
4
30
NTTFS4C06N
2000
C, CAPACITANCE (pF)
1800
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
Ciss
1600
1400
1200
Coss
1000
800
600
400
200
0
Crss
0
5
10
15
20
25
30
0
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
Qgs
2
0
2
4
6
8
10 12 14 16 18 20 22 24 26
20
td(off)
tr
td(on)
10
VGS = 0 V
18
IS, SOURCE CURRENT (A)
t, TIME (ns)
Qgd
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
tf
16
14
12
10
8
6
TJ = 125°C
4
TJ = 25°C
2
1
10
100
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
10 ms
100 ms
10
10 ms
0 V < VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.01
0.1
1 ms
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
1000
ID, DRAIN CURRENT (A)
4
Figure 7. Capacitance Variation
100
0.1
6
Qg, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 15 A
VGS = 10 V
1
QT
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1.0
10
100
20
ID = 20 A
16
12
8
4
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
15
NTTFS4C06N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
R(t) (°C/W)
10
20%
10%
5%
2%
1%
1
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
100
PULSE TIME (sec)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
100
ID, DRAIN CURRENT (A)
GFS (S)
Figure 13. Thermal Response
0
5
10
15
20
25
30
35
40
45
50
55
TA = 25°C
1
1.0E−08
60
TA = 85°C
10
1.0E−07
1.0E−06
1.0E−05
1.0E−04 1.E−03
ID (A)
PULSE WIDTH (SECONDS)
Figure 14. GFS vs. ID
Figure 15. Avalanche Characteristics
http://onsemi.com
6
NTTFS4C06N
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
0.20 C
8 7 6 5
4X
E1 E
q
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
e
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
L
C
6X
0.10 C
DETAIL A
SEATING
PLANE
DETAIL A
8X
e/2
1
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
0.65
PITCH
PACKAGE
OUTLINE
4X
0.66
M
E3
8
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
K
E2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
5
D2
BOTTOM VIEW
3.60
L1
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
7
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTTFS4C06N/D
Similar pages