30V 2.9A N-Ch with Schottky Barrier Diode TSOP6

NTGD4169F
Power MOSFET and
Schottky Diode
30 V, 2.9 A, N−Channel with Schottky
Barrier Diode, TSOP−6
Features
•
•
•
•
•
•
Fast Switching
Low Gate Change
Low RDS(on)
Low VF Schottky Diode
Independently Connected Devices to Provide Design Flexibility
This is a Pb−Free Device
Applications
• DC−DC Converters
• Portable Devices like PDA’s, Cellular Phones, and Hard Drives
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N−CHANNEL MOSFET
V(BR)DSS
30 V
Symbol
Value
Unit
VDSS
30
V
Gate−to−Source Voltage
VGS
±12
V
ID
2.6
1.9
A
Power Dissipation
(Note 1)
Steady State
TA = 25°C
TA = 85°C
t≤5 s
TA = 25°C
Steady State
TA = 25°C
PD
Pulsed Drain Current
125 mW @ 2.5 V
2.2 A
VF Max
IF Max
30 V
0.53 V
1.0 A
A
G
S
W
0.9
K
N−Channel MOSFET
1.1
IDM
8.6
A
TJ, TSTG
−25 to
150
°C
Source Current (Body Diode)
IS
0.9
A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
tp = 10 ms
Operating Junction and Storage Temperature
SCHOTTKY MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
VRRM
30
V
DC Blocking Voltage
VR
30
V
Average Rectified Forward Current
IF
1
A
Symbol
Value
Unit
Junction−to−Ambient – Steady State (Note
1)
RqJA
140
Junction−to−Ambient – t ≤ 5 s (Note 1)
RqJA
110
Peak Repetitive Reverse Voltage
THERMAL RESISTANCE RATINGS
Parameter
© Semiconductor Components Industries, LLC, 2008
1
Schottky Diode
MARKING
DIAGRAM
1
TSOP−6
CASE 318G
STYLE 15
TD MG
G
1
TD = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTION
A
1
6
K
°C/W
S
2
5
N/C
°C/W
G
3
4
D
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
May, 2008 − Rev. 1
2.6 A
VR Max
2.9
t≤5 s
90 mW @ 4.5 V
D
Drain−to−Source Voltage
N−Channel
Continuous Drain
Current (Note 1)
ID Max
SCHOTTKY DIODE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
RDS(on) Max
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Publication Order Number:
NTGD4169F/D
NTGD4169F
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Characteristic
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
21.4
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 85°C
10
IGSS
VDS = 0 V, VGS = ±12 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
100
nA
1.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
gFS
0.5
0.9
−3.4
mV/°C
VGS = 4.5 V
ID = 2.6 A
52
90
VGS = 2.5 V
ID = 2.2 A
67
125
VDS = 15 V, ID = 2.6 A
2.6
mW
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
VGS = 0 V, f = 1.0 MHz,
VDS = 15 V
CRSS
295
48
27
Total Gate Charge
QG(TOT)
3.7
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
0.8
td(ON)
7.0
VGS = 4.5 V, VDS = 15 V,
ID = 2.0 A
pF
5.5
0.6
nC
0.9
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 1.0 A, RG = 6.0 W
tf
4.0
ns
14
2.0
DRAIN−TO−SOURCE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
Ta
Discharge Time
Tb
Reverse Recovery Time
VGS = 0 V
IS = 0.9 A
TJ = 25°C
0.7
1.2
V
8.0
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 0.9 A
QRR
5.0
3.0
3.0
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
ns
nC
NTGD4169F
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Conditions
Typ
Max
Unit
Maximum Instantaneous
Forward Voltage
VF
IF = 0.5 A
0.41
0.45
V
IF = 1.0 A
0.46
0.53
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
7.3
20
VR = 20 V
2.5
8.0
Typ
Max
Parameter
Min
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85°C unless otherwise noted)
Symbol
Test Conditions
Maximum Instantaneous
Forward Voltage
Parameter
VF
IF = 0.5 A
Min
0.35
IF = 1.0 A
0.41
Maximum Instantaneous
Reverse Current
IR
VR = 30 V
0.4
VR = 20 V
0.17
Unit
V
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125°C unless otherwise noted)
Parameter
Symbol
Maximum Instantaneous
Forward Voltage
VF
Maximum Instantaneous
Reverse Current
IR
Test Conditions
Min
Typ
IF = 0.5 A
0.31
IF = 1.0 A
0.39
VR = 30 V
4.4
VR = 20 V
1.6
Max
Unit
V
mA
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Capacitance
Symbol
Test Conditions
C
VR = 10 V, f = 1.0 MHz
Min
Typ
Max
28
Unit
pF
ORDERING INFORMATION
Device
NTGD4169FT1G
Package
Shipping†
TSOP−6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NTGD4169F
TYPICAL CHARACTERISTICS N−CHANNEL
VGS = 4.5 V
3.5 V
2.5 V
7.0
2.0 V
6.0
5.0
4.0
3.0
2.0
1.5 V
1.0
0
7.0
6.0
5.0
4.0
3.0
−55°C
2.0
125°C
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
TJ = 25°C
0.12
ID = 2.6 A
0.10
0.08
0.06
0.04
0.02
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS, GATE VOLTAGE (V)
2
2.25 2.5
TJ = 25°C
0.09
0.08
VGS = 2.5 V
0.07
0.06
VGS = 4.5 V
0.05
0.04
0.03
0.02
0
1.0
2.0
3.0
4.0
5.0
6.0
1.6
350
1.3
1.2
1.1
1.0
0.9
0.8
25
50
75
100
125
9.0
150
TJ = 25°C
VGS = 0 V
f = 1 MHz
CISS
300
250
200
150
100
COSS
50
0.7
0
8.0
ID, DRAIN CURRENT (A)
400
ID = 2.6 A
VGS = 4.5 V
−25
7.0
Figure 4. On−Resistance vs. Drain Current and
Temperature
C, CAPACITANCE (pF)
RDS(on), DRAIN−TO−SOURCE RESISTANCE
1.75
0.10
Figure 3. On−Region vs. Gate−To−Source
Voltage
0.6
−50
1.5
Figure 2. Transfer Characteristics
0.14
1.4
1.25
Figure 1. On−Region Characteristics
0.16
1.5
1
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.18
0
1.0
0
0.75
25°C
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.20
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (W)
VDS = 5 V
8.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
8.0
9.0
TJ = 25°C
ID, DRAIN CURRENT (A)
9.0
0
CRSS
0
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Capacitance Variation
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4
30
16
QT
14
4
12
VDS
3
2
10
VGS
QGD
QGS
8
6
ID = 2.0 A
TJ = 25°C
VDS = 15 V
1
4
2
0
0
0
1
10
2
3
IS, SOURCE CURRENT (A)
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
NTGD4169F
TJ = 150°C
TJ = 25°C
0.1
0.3
4
0.4
0.5
0.6
0.7
0.8
0.9
1.0
QG, TOTAL GATE CHARGE (nC)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 7. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
Figure 8. Diode Forward Voltage versus
Current
1.1
1.1
40
1.2
ID = 250 mA
30
1.0
POWER (W)
0.9
0.8
0.7
20
10
0.6
0.5
0.4
−50
−25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
TJ, JUNCTION TEMPERATURE (°C)
SINGLE PULSE TIME (s)
Figure 9. Threshold Voltage
Figure 10. Single Pulse Maximum Power
Dissipation
100
ID, DRAIN CURRENT (A)
VGS(th) (V)
1.0
10
VGS = −10 V
Single Pulse
TA = 25°C
100 ms
1 ms
1
10 ms
0.1
0.01
0.1
RDS(on) Limit
Thermal Limit
Package Limit
dc
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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5
100
1000
NTGD4169F
1
R(t), EFFECTIVE TRANSIENT
THERMAL RESPONSE
NORMALIZED
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
20
30
t, TIME (s)
Figure 12. FET Thermal Response
10
1
100E−3
TJ = 125°C
IR, REVERSE CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT
(A)
TYPICAL CHARACTERISTICS SCHOTTKY
25°C
−55°C
0.3
0.4
0.5
0.6
0.7
TJ = 125°C
1E−3
TJ = 85°C
100E−6
85°C
0.1
0.2
10E−3
0.8
0.9
1.0
10E−6
TJ = 25°C
1E−6
100E−9
0
10
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 13. Typical Forward Voltage
Figure 14. Typical Reverse Current
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6
NTGD4169F
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE T
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
D
6
HE
1
5
4
2
3
E
b
DIM
A
A1
b
c
D
E
e
L
HE
q
e
c
A
0.05 (0.002)
q
L
A1
MIN
0.90
0.01
0.25
0.10
2.90
1.30
0.85
0.20
2.50
0°
MILLIMETERS
NOM
MAX
1.00
1.10
0.06
0.10
0.38
0.50
0.18
0.26
3.00
3.10
1.50
1.70
0.95
1.05
0.40
0.60
2.75
3.00
10°
−
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
STYLE 15:
PIN 1. ANODE
2. SOURCE
3. GATE
4. DRAIN
5. N/C
6. CATHODE
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTGD4169F/D
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