SiC Power Module Data Sheet BSM300D12P2E001 lApplication lCircuit diagram Motor drive Inverter, Converter 1 7 Photovoltaics, wind power generation. 9 8 Induction heating equipment. 3,4 6 5 lFeatures 2 10 NTC 1) Low surge, low switching loss. 11 2) High-speed switching possible. 3) Reduced temperature dependence. lConstruction This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM. lDimensions & Pin layout (Unit : mm) www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1/9 2015.09 - Rev.A Data Sheet BSM300D12P2E001 lAbsolute maximum ratings (Tj = 25°C) Parameter Drain-source voltage Conditions Symbol VDSS G-S short Gate-source voltage(+) VGSS Gate-source voltage(-) G - S Voltage (tsurge<300nsec) VGSS_surge ID Drain current *1 IDRM IS Source current *1 ISRM Total power disspation *3 Max Junction Temperature Operating junction temperature Storage temperature Ptot Tjmax Tjop Tstg Isolation voltage Visol D-S short D-S short DC (Tc=60°C) Pulse (Tc=60°C) 1ms *2 DC (Tc=60°C ) Pulse (Tc=60°C) 1ms *2 Tc=25°C Terminals to baseplate, f=60Hz AC 1min. Limit 1200 22 -6 -10 to 26 300 600 300 600 1875 175 Unit V A W -40 to150 -40 to125 °C 2500 Vrms 4.5 Main Terminals : M6 screw N·m Mounting to heat shink : M5 screw 3.5 (*1) Case temperature (Tc) is defined on the surface of base plate just under the chips. (*2) Repetition rate should be kept within the range where temperature rise if die should not exceed T j max. (*3) Tj is less than 175°C - Mounting torque Example of acceptable VGS waveform +26V tsurge +22V 0V tsurge -6V -10V www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 2/9 2015.09 - Rev.A Data Sheet BSM300D12P2E001 lElectrical characteristics (Tj=25°C) Parameter Conditions Symbol Static drain-source on-state voltage Tj=25°C Tj=125°C Tj=150°C VDS(on) ID=300A, VGS=18V VDS=1200V, VGS=0V IDSS Drain cutoff current Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C VGS=0V, IS=300A VSD Source-drain voltage Min. － － － － － VGS=18V, IS=300A － － － 1.6 － -0.5 － － － － － － - Gate-source threshold voltage VGS(th) VDS=10V, ID=68mA VGS=22V, VDS=0V IGSS Gate-source leakage current VGS= -6V, VDS=0V td(on) VGS(on)=18V, VGS(off)=0V tr VDS=600V ID=300A trr Switching characteristics td(off) RG=0.2W inductive load tf Input capacitance Gate Registance NTC Rated Resistance NTC B Value Stray Inductance VDS=10V, VGS=0V,100kHz Tj=25°C Ciss RGint R25 B50/25 Ls Creepage Distance - Clearance Distance - Terminal to heat sink Terminal to terminal Terminal to heat sink Terminal to terminal Typ. 2.2 3.0 3.4 1.6 2.2 2.4 1.4 1.6 1.7 2.7 － － 80 70 50 250 65 35 1.6 5.0 3370 13 14.5 15.0 12.0 9.0 － － － DMOS (1/2 module) *4 4 － SBD (1/2 module) * Case to heat sink, per 1 module, Case-to-heat sink Rth(c-f) 0.035 Thermal resistance Thermal grease appied *5 (*4) Measurement of Tc is to be done at the point just beneath the chip. (*5) Typical value is measured by using thermally conductive grease of λ=0.9W/(m・K). Junction-to-case thermal resistance Rth(j-c) Eon=Id×Vds Max. 2.9 － 4.5 3.2 2.1 3.2 － － 4.0 0.5 － － － － － － － - 0.08 0.11 Unit V mA V V mA ns nF W kW K nH mm mm mm mm K/W - Eoff=Id×Vds lWaveform for switching test trr Vsurge VDS 90% ID 2% 90% 10% 10% 2% 2% 10% 2% 90% VGS 10% td(on) www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. td(off) tr 3/9 tf 2015.09 - Rev.A Data Sheet BSM300D12P2E001 lElectrical characteristic curves (Typical) Fig.1 Typical Output Characteristics [ Tj=25ºC ] 8 600 VGS=18V VGS=18V 7 Drain-Source Voltage : VDS [V] VGS=16V 500 VGS=20V Drain Current : ID [A] Fig.2 Drain-Source Voltage vs. Drain Current 400 VGS=14V 300 VGS=12V 200 100 VGS=10V 6 Tj=150ºC 5 4 Tj=125ºC 3 Tj=25ºC 2 1 0 0 0 2 4 6 0 8 200 Drain-Source Voltage : VDS [V] Tj=25ºC Drain-Source Voltage : VDS [V] 7 6 5 4 ID=400A ID=300A ID=200A ID=150A 1 0 12 14 16 18 20 22 24 26 Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.4 Static Drain - Source On-State Resistance vs. Junction Temperature 8 2 30 ID=300A 25 20 VGS=12V 15 10 VGS=14V VGS=16V VGS=18V VGS=20V 5 0 0 50 100 150 200 250 Junction Temperature : Tj [ºC] Gate-Source Voltage : VGS [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 600 Drain Current : ID [A] Fig.3 Drain-Source Voltage vs. Gate-Source Voltage [ Tj=25ºC ] 3 400 4/9 2015.09 - Rev.A Data Sheet BSM300D12P2E001 lElectrical characteristic curves (Typical) Fig.5 Forward characteristic of Diode Fig.6 Forward characteristic of Diode 1000 600 Tj=150ºC Tj=125ºC Tj=150ºC 500 Tj=150ºC Source Current : Is [A] Source Current : Is [A] Tj=25ºC Tj=125ºC Tj=25ºC 100 VGS=0V VGS=18V 10 Tj=125ºC 400 Tj=150ºC Tj=125ºC 300 Tj=25ºC 200 100 Tj=25ºC VGS=0V VGS=18V 0 0 1 2 3 4 0 1 2 3 4 Source-Drain Voltage : VSD [V] Source-Drain Voltage : VSD [V] Fig.8 Drain Current vs. Gate-Source Voltage Fig.7 Drain Current vs. Gate-Source Voltage 600 1000 VDS=20V VDS=20V Tj=125ºC 500 400 Drain Current : ID [A] Drain Current : ID [A] Tj=150ºC Tj=125ºC 300 Tj=25ºC 200 100 Tj=150ºC Tj=25ºC 10 100 0 1 0 5 10 15 0 10 15 Gate-Source Voltage : VGS [V] Gate-Source Voltage : VGS [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 5 5/9 2015.09 - Rev.A Data Sheet BSM300D12P2E001 lElectrical characteristic curves (Typical) Fig.9 Switching Characteristics [ Tj=25ºC ] Fig.10 Switching Characteristics [ Tj=150ºC ] 1000 1000 td(off) Switching Time : t [ns] Switching Time : t [ns] td(off) tr 100 tf td(on) VDS=600V VGS(on)=18V VGS(off)= 0V RG=0.2W INDUCTIVE LOAD 100 td(on) VDS=600V VGS(on)=18V VGS(off)= 0V 10 10 0 200 400 tr tf 0 600 200 Drain Current : ID [A] 400 600 Drain Current : ID [A] Fig.11 Switching Loss vs. Drain Current [ Tj=25ºC ] Fig.12 Switching Loss vs. Drain Current [ Tj=150ºC ] 25 25 Eoff VDS=600V VGS(on)=18V VGS(off)=0V RG=0.2W INDUCTIVE LOAD 15 VDS=600V VGS(on)=18V VGS(off)=0V RG=0.2W INDUCTIVE LOAD 20 Switching Loss [mJ] 20 Switching Loss [mJ] RG=0.2W INDUCTIVE LOAD Eon 10 5 15 Eoff Eon 10 5 Err Err 0 0 0 200 400 0 600 Drain Current : ID [A] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 200 400 600 Drain Current : ID [A] 6/9 2015.09 - Rev.A Data Sheet BSM300D12P2E001 lElectrical characteristic curves (Typical) Fig.14 Recovery Characteristics vs. Drain Current [ Tj=150ºC ] 1000 Irr 100 0.1 trr VDS=600V VGS(on)=18V VGS(off)=0V RG=0.2W INDUCTIVE LOAD 10 0.01 1 Recovery Time : trr [ns] 1 Recovery Current : Irr [A] Recovery Time : trr [ns] 1000 200 400 Irr 100 0.1 trr VDS=600V VGS(on)=18V VGS(off)=0V RG=0.2W INDUCTIVE LOAD 10 0.001 0 600 Drain Current : ID [A] 200 400 600 Drain Current : ID [A] Fig.16 Switching Characteristics vs. Gate Resistance [ Tj=150ºC ] Fig.15 Switching Characteristics vs. Gate Resistance [ Tj=25ºC ] 10000 10000 VDS=600V ID=300A VGS(on)=18V VGS(off)=0V INDUCTIVE LOAD 1000 VDS=600V ID=300A VGS(on)=18V VGS(off)=0V INDUCTIVE LOAD td(off) tf Switching Time : t [ns] Recovery Current : Irr [A] 0.01 1 0.001 0 1 Switching Time : t [ns] Fig.13 Recovery Characteristics vs. Drain Current [ Tj=25ºC ] tr td(on) 100 10 1000 td(off) tf tr td(on) 100 10 0.1 1 10 100 0.1 Gate Resistance : RG [W] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 1 10 100 Gate Resistance : RG [W] 7/9 2015.09 - Rev.A Data Sheet BSM300D12P2E001 lElectrical characteristic curves (Typical) Fig.18 Switching Loss vs. Gate Resistance [ Tj=150ºC ] Fig.17 Switching Loss vs. Gate Resistance [ Tj=25ºC ] 60 60 VDS=600V ID=300A VGS(on)=18V VGS(off)=0V INDUCTIVE LOAD 40 VDS=600V ID=300A VGS(on)=18V VGS(off)=0V INDUCTIVE LOAD 50 Eoff Switching Loss [mJ] Switching Loss [mJ] 50 Eon 30 20 10 40 30 Eoff 20 Eon 10 Err 0 0.1 1 Err 0 10 100 0.1 Fig.19 Typical Capacitance vs. Drain-Source Voltage 100 Fig.20 Gate Charge Characteristics [ Tj=25ºC ] 1.E-07 1.E-08 Coss 1.E-09 Tj=25ºC VGS=0V Crss Gate-Source Voltage : VGS [V] 25 Ciss Capasitance : C [F] 10 Gate Resistance : RG [W] Gate Resistance : RG [W] 1.E-10 0.01 1 20 15 10 5 ID=300A Tj=25ºC 0 0.1 1 10 100 1000 0 Drain-Source Voltage : VDS [V] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 500 1000 1500 2000 Total Gate charge : Qg [nC] 8/9 2015.09 - Rev.A Data Sheet BSM300D12P2E001 lElectrical characteristic curves (Typical) Normalized Transient Thermal Impedance : Rth Fig.21 Normalized Transient Thermal Impedance 1 0.1 Single Pulse TC=25ºC Per unit base DMOS part : 0.08K/W SBD part : 0.11K/W 0.01 0.001 0.01 0.1 1 10 Time [s] www.rohm.com © 2015 ROHM Co., Ltd. All rights reserved. 9/9 2015.09 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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