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Datasheet
Serial EEPROM Series Industrial EEPROM
125℃ Operation Microwire BUS EEPROM (3-wire)
BR93H86RF-2LB
Package
General Description
W(Typ.) x D(Typ.) x H(Max.)
This is the product guarantees long time support in
Industrial market.
BR93H86RF-2LB is a serial EEPROM of serial 3-line
interface method.
Features
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Long Time Support a Product for Industrial
Applications.
Conforming to Microwire BUS
Withstands Electrostatic Voltage up to 6kV
(HBM method typ)
Wide Temperature Range -40℃ to +125℃
Same package line-up and same pin configuration
2.5V to 5.5V Single Supply Voltage Operation
Address Auto Increment Function at READ
Operation
Prevention of write mistake
¾
Write prohibition at power on
¾
Write prohibition by command code
¾
Write mistake prevention circuit at low voltage
Self-timed programming cycle
Program Condition Display by READY / BUSY
Low Supply Current
¾
Write Operation (5V) : 0.8mA (Typ)
¾
Read Operation (5V) : 0.5mA (Typ)
¾
Standby Operation (5V) : 0.1μA (Typ)
Compact package
High Reliability using ROHM Original
Double-Cell Structure
More than 100 years data retention
More than 1 million write cycles
Data set to FFFFh on all addresses at shipment
SOP8
5.00mm x 6.20mm x 1.71mm
Application
Industrial Equipment
BR93H86RF-2LB
Capacity
Bit Format
Product Name
Supply Voltage
Package
16Kbit
1K×16
BR93H86RF-2LB
2.5V to 5.5V
SOP8
〇Product structure : Silicon monolithic integrated circuit
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© 2013 ROHM Co., Ltd. All rights reserved.
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〇This product has no designed protection against radioactive rays
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Datasheet
BR93H86RF-2LB
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol
Limit
Unit
Supply Voltage
VCC
-0.3 to +6.5
V
Permissible Dissipation
Pd
0.56
W
Storage Temperature Range
Tstg
-65 to +150
℃
Operating Temperature Range
Topr
-40 to +125
℃
‐
-0.3 to VCC+0.3
V
Input Voltage/Output Voltage
Remarks
When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃.
Memory Cell Characteristics (VCC=2.5V to 5.5V)
Limit
Parameter
Write Cycles (1)
Data Retention (1)
Unit
Conditions
-
Cycles
Ta≦85℃
-
-
Cycles
Ta≦105℃
300,000
-
-
Cycles
Ta≦125℃
100
-
-
Years
Ta≦25℃
60
-
-
Years
Ta≦105℃
50
-
-
Years
Ta≦125℃
Min
Typ
Max
1,000,000
-
500,000
(1) Not 100% TESTED
Recommended Operating Conditions
Parameter
Symbol
Limit
Supply Voltage
VCC
2.5 to 5.5
Input Voltage
VIN
0 to VCC
Unit
V
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Datasheet
BR93H86RF-2LB
DC Characteristics (Unless otherwise specified, Ta=-40℃ to +125℃, VCC=2.5V to 5.5V)
Limit
Parameter
Symbol
Unit
Min
Typ
Max
Conditions
Input Low Voltage
VIL
-0.3
-
0.3xVCC
V
Input High Voltage
VIH
0.7xVCC
-
VCC+0.3
V
Output Low Voltage 1
VOL1
0
-
0.4
V
IOL=2.1mA, 4.0V≦VCC≦5.5V
Output Low Voltage 2
VOL2
0
-
0.2
V
IOL=100μA
Output High Voltage 1
VOH1
2.4
-
VCC
V
IOH=-0.4mA, 4.0V≦VCC≦5.5V
Output High Voltage 2
VOH2
VCC-0.2
-
VCC
V
IOH=-100μA
Input Leak Current
ILI
-10
-
10
μA
VIN=0V to VCC
Output Leak Current
ILO
-10
-
10
μA
VOUT=0V to VCC, CS=0V
ICC1
-
-
3.0
mA
fSK=2MHz, tE/W=4ms (WRITE)
ICC2
-
-
1.5
mA
fSK=2MHz (READ)
ICC3
-
-
3.0
mA
fSK=2MHz, tE/W=4ms (WRAL)
ISB
-
-
10
μA
CS=0V, DO=OPEN
Supply Current
Standby Current
AC Characteristics (Unless otherwise specified, Ta=-40℃ to +125℃, VCC=2.5V to 5.5V)
Parameter
Symbol
Min
Typ
Max
Unit
SK Frequency
fSK
-
-
2
MHz
SK “H” Time
tSKH
200
-
-
ns
SK “L” Time
tSKL
200
-
-
ns
CS “L” Time
tCS
200
-
-
ns
CS Setup Time
tCSS
50
-
-
ns
DI Setup Time
tDIS
50
-
-
ns
CS Hold Time
tCSH
0
-
-
ns
DI Hold Time
tDIH
50
-
-
ns
Data “1” Output Delay Time
tPD1
-
-
200
ns
Data “0” Output Delay Time
tPD0
-
-
200
ns
Time from CS to Output establishment
tSV
-
-
150
ns
Time from CS to High-Z
tDF
-
-
150
ns
Write Cycle Time
tE/W
-
-
4
ms
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Datasheet
BR93H86RF-2LB
Serial Input / Output Timing
CS
tCSS
tSKH
tSKL
tCSH
SK
tDIS
tDIH
DI
tPD1
tPD0
DO(READ)
tDF
DO(WRITE)
STATUS VALID
Figure 1. Serial Input / Output Timing Diagram
○Data is taken from DI, in sync with the rise of SK.
○At READ command, data is outputted from DO in sync with the rise of SK.
○After WRITE command input, the status signal of WRITE (READY / BUSY) can be monitored from DO by setting CS to “H”
after tCS, from the fall of CS, and will display a valid status until the next command start bit is inputted. But, if CS is set to
“L”, DO sets to High-Z state.
○To execute a series of commands, CS is set to “L” once after completion of each command for internal circuit reset
Block Diagram
CS
Power source voltage detection
Command decode
Control
SK
DI
Clock generation
Command
register
High voltage occurrence
Write
prohibition
Address
buffer
10bit
Address
decoder
10bit
16,384 bit
EEPROM
Data
register
DO
16bit
R/W
amplifier
16bit
Dummy bit
Figure 2. Block Diagram
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Datasheet
BR93H86RF-2LB
Pin Configuration
TOP VIEW
VCC
8
NC
NC
7
6
GND
5
BR93H86RF-2LB
1
2
3
CS
SK
DI
4
DO
Figure 3. Pin Configuration
Pin Descriptions
Pin Number
Pin Name
I/O
1
CS
Input
Chip select input
2
SK
Input
Serial clock input
3
DI
Input
Start bit, ope code, address, and serial data input
4
DO
Output
Serial data output, READY / BUSY status output
5
GND
-
Ground, 0V
6,7
NC
-
Non connected terminal, VCC, GND or OPEN
8
VCC
-
Power supply, 2.5V to 5.5V
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Function
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Datasheet
BR93H86RF-2LB
Typical Performance Curves
4.5
4.5
4.0
4.0
Ta= -40℃
Ta= 25℃
Ta= 125℃
3.5
Ta= -40℃
Ta= 25℃
Ta= 125℃
3.5
INPUT LOW VOLTAGE : VIL[V]
INPUT HIGH VOLTAGE :VIH[V]
SPEC
3.0
2.5
2.0
1.5
3.0
2.5
2.0
1.5
SPEC
1.0
1.0
0.5
0.5
0.0
0.0
2
3
4
5
6
2
3
SUPPLY VOLTAGE : VCC[V]
Figure 4. Input High Voltage (CS, SK, DI)
vs. Supply Voltage
5
6
Figure 5. Input Low Voltage (CS, SK, DI)
vs. Supply Voltage
1.0
1.0
Ta= -40℃
Ta= 25℃
0.8
Ta= -40℃
Ta= 25℃
0.8
Ta= 125℃
OUTPUT LOW VOLTAGE : VOL[V]
OUTPUT LOW VOLTAGE : VOL[V]
4
SUPPLY VOLTAGE : VCC [V]
0.6
0.4
Ta= 125℃
0.6
SPEC
0.4
SPEC
0.2
0.2
0.0
0.0
0
1
2
3
4
5
OUTPUT LOW CURRENT : IOL[mA]
1
2
3
4
5
OUTPUT LOW CURRENT : IOL[mA]
Figure 7. Output Low Voltage vs. Output Low Current
(VCC=4.0V)
Figure 6. Output Low Voltage vs. Output Low Current
(VCC=2.5V)
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Datasheet
BR93H86RF-2LB
Typical Performance Curves‐Continued
5.0
5.0
Ta= -40℃
Ta= 25℃
4.0
Ta= 125℃
OUTPUT HIGH VOLTAGE : VOH[V]
OUTPUT HIGH VOLTAGE : VOH[V]
4.0
3.0
SPEC
2.0
1.0
Ta= -40℃
Ta= 25℃
3.0
Ta= 125℃
SPEC
2.0
1.0
0.0
0.0
0
0.4
0.8
1.2
1.6
0
OUTPUT HIGH CURRENT : IOH[mA]
0.4
0.8
1.6
Figure 9. Output High Voltage vs. Output High Current
(VCC=4.0V)
Figure 8. Output High Voltage vs. Output High Current
(VCC=2.5V)
12
12
SPEC
SPEC
10
OUTPUT LEAKAGE CURRENT : ILO[μA]
10
INPUT LEAKAGE CURRENT : ILI[μA]
1.2
OUTPUT HIGH CURRENT : IOH[mA]
8
Ta= -40℃
Ta= 25℃
Ta= 125℃
6
4
Ta= -40℃
8
Ta= 25℃
Ta= 125℃
6
4
2
2
0
0
2
3
4
5
6
3
4
5
Figure 11. Output Leak Current (DO)
vs. Supply Voltage
Figure 10. Input Leak Current (CS, SK, DI)
vs. Supply Voltage
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SUPPLY VOLTAGE : VCC [V]
SUPPLY VOLTAGE : VCC [V]
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Datasheet
BR93H86RF-2LB
Typical Performance Curves‐Continued
3.5
1.6
SPEC
SPEC
CURRENT CONSUMPTION AT READ : ICC2(READ) [mA]
SUPPLY CURRENT AT WRITE : ICC1(WRITE) [mA]
3.0
2.5
Ta= -40℃
2.0
Ta= 25℃
Ta= 125℃
1.5
1.0
0.5
0.0
1.2
Ta= -40℃
Ta= 25℃
Ta= 125℃
0.8
0.4
0.0
2
3
4
5
6
2
3
SUPPLY VOLTAGE : VCC[V]
5
6
Figure 13. Supply Current at READ Operation
vs. Supply Voltage
(READ, fSK=2.0MHz)
Figure 12. Supply Current at WRITE Operation
vs. Supply Voltage
(WRITE, fSK=2.0MHz)
3.5
12
3.0
10
SPEC
SPEC
2.5
STANDBY CURRENT : ISB [μA ]
CURRENT CONSUMPTION AT WRAL : ICC3(WRAL) [mA]
4
SUPPLY VOLTAGE : VCC[V]
Ta= -40℃
Ta= 25℃
2.0
Ta= 125℃
1.5
1.0
8
Ta= -40℃
Ta= 25℃
Ta= 125℃
6
4
2
0.5
0.0
0
2
3
4
5
6
2
SUPPLY VOLTAGE : VCC[V]
4
5
6
SUPPLY VOLTAGE : VCC[V]
Figure 14. Supply Current at WRAL Operation
vs. Supply Voltage
(WRAL, fSK=2.0MHz)
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Figure 15. Standby Current vs. Supply Voltage
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Datasheet
BR93H86RF-2LB
Typical Performance Curves‐Continued
28
300
24
250
Ta= -40℃
Ta= 25℃
Ta= 125℃
SPEC
SK HIGH TIME : tSKH [ns]
SK FREQUENCY : fSK [MHz ]
20
16
12
200
Ta= -40℃
Ta= 25℃
Ta= 125℃
150
100
8
50
4
SPEC
0
0
2
3
4
5
6
2
3
SUPPLY VOLTAGE : VCC [V]
4
300
300
250
250
SPEC
SPEC
200
CS LOW TIME : tCS [ns ]
SK LOW TIME : tSKL [ns ]
6
Figure 17. SK High Time vs. Supply Voltage
Figure 16. SK Frequency vs. Supply Voltage
Ta= -40℃
Ta= 25℃
150
5
SUPPLY VOLTAGE : VCC[V]
Ta= 125℃
200
150
100
100
50
50
0
Ta= -40℃
Ta= 25℃
Ta= 125℃
0
2
3
4
5
6
2
SUPPLY VOLTAGE : VCC[V]
4
5
6
SUPPLY VOLTAGE : VCC[V]
Figure 18. SK Low Time vs. Supply Voltage
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Figure 19. CS Low Time vs. Supply Voltage
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Datasheet
BR93H86RF-2LB
Typical Performance Curves‐Continued
120
120
100
100
Ta= 125℃
80
DI SETUP TIME : tDIS [ns]
CS SETUP TIME : tCSS [ns ]
Ta= -40℃
Ta= 25℃
60
SPEC
40
20
80
Ta= -40℃
Ta= 25℃
Ta= 125℃
60
SPEC
40
20
0
0
2
3
4
5
6
2
3
SUPPLY VOLTAGE : VCC[V]
4
5
6
SUPPLY VOLTAGE : VCC[V]
Figure 21. DI Setup Time vs. Supply Voltage
Figure 20. CS Setup Time vs. Supply Voltage
120
50
0
SPEC
100
-50
CS HOLD TIME : tCSH [ns]
DI HOLD TIME : tDIH [ ns]
-100
Ta= -40℃
Ta= 25℃
80
Ta= 125℃
60
SPEC
40
-150
-200
-250
Ta= -40℃
Ta= 25℃
Ta= 125℃
-300
-350
20
-400
0
-450
2
3
4
5
6
SUPPLY VOLTAGE : VCC [V]
3
4
5
SUPPLY VOLTAGE : VCC[V]
Figure 22. DI Hold Time vs. Supply Voltage
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Figure 23. CS Hold Time vs. Supply Voltage
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Datasheet
BR93H86RF-2LB
350
350
300
300
DATA "0" OUTPUT DELAY TIME : tPD0 [ns ]
DATA "1" OUTPUT DELAY TIME : tPD1 [ns ]
Typical Performance Curves‐Continued
Ta= -40℃
Ta= 25℃
250
Ta= 125℃
200
SPEC
150
100
50
Ta= -40℃
Ta= 25℃
250
Ta= 125℃
200
SPEC
150
100
50
0
0
2
3
4
5
6
2
3
SUPPLY VOLTAGE : VCC[V]
5
6
Figure 25. Data "0" Output Delay Time vs. Supply Voltage
Figure 24. Data "1" Output Delay Time vs. Supply Voltage
250
250
[ns ]
Ta= -40℃
Ta= 25℃
Ta= 125℃
200
TIME BETWEEN CS AND OUTPUT HIGH-Z :tDF
TIME BETWEEN CS AND OUTPUT : tSV [ ns]
4
SUPPLY VOLTAGE : VCC[V]
SPEC
150
100
50
0
Ta= -40℃
Ta= 25℃
Ta= 125℃
200
SPEC
150
100
50
0
2
3
4
5
6
SUPPLY VOLTAGE : VCC[V]
3
4
5
SUPPLY VOLTAGE : VCC[V]
Figure 27. Time Between CS Output High-Z
vs. Supply Voltage
Figure 26. Time Between CS and Output
vs. Supply Voltage
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Datasheet
BR93H86RF-2LB
Typical Performance Curves‐Continued
6
Ta= -40℃
Ta= 25℃
Ta= 125℃
5
WRITE CYCLE TIME : tE/W[ms]
SPEC
4
3
2
1
0
2
3
4
SUPPLY VOLTAGE
: VCC[V]
5
6
Figure 28. Write Cycle Time vs. Supply Voltage
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Datasheet
BR93H86RF-2LB
Description of Operation
Communications of the Microwire Bus are carried out by SK (serial clock), DI (serial data input), DO (serial data output), and
CS (chip select) for device selection.
In connecting one EEPROM to a microcontroller, connect it as shown in Figure 29-(a) or Figure 29-(b). And, when using the
input and output common I/O port of the microcontroller, connect DI and DO via a resistor as shown in Figure 29-(b) (Refer to
pages 19-20), wherein connection by 3 lines is possible.
In case of using multiple EEPROM devices, refer to Figure 29-(c).
Microcontroller
CS
CS
CS
CS
SK
SK
SK
SK
DO
DI
DO
DI
DI
DO
CS3
CS1
CS0
SK
DO
DI
DO
CS
SK
DI
DO
BR93H86RF
CS
SK
DI
DO
Microcontroller
BR93H86RF
CS
SK
DI
DO
Microcontroller
Device 1
Device 2
Device 3
Figure 29-(a). Connection by 4 lines Figure 29-(b). Connection by 3 lines Figure 29-(c). Connection example of multiple devices
Figure 29. Connection Methods with Microcontroller
Communications of the Microwire Bus are started by the first “1” input after the rise of CS. This input is called the “Start Bit”.
After input of the start bit, the “Ope Code”, Address, and Data are then inputted consecutively. Address and Data are all
inputted with MSB first.
All “0” signal inputs after the rise of CS up to the start bit is ignored. Therefore, if there is a limitation in the bit width of PIC of
the microcontroller, it is possible to input “0” before the start bit to control the bit width.
Command Mode
Command
Read (READ)
Address
Start
bit
Ope
code
BR93H86RF-2LB
1
10
A9,A8,A7,A6,A5,A4,A3,A2,A1,A0
D15 to D0(READ DATA)
1
00
1 1 * * * * * * * *
-
(1)
Write enable (WEN)
Data
Write (WRITE)
(2)
1
01
A9,A8,A7,A6,A5,A4,A3,A2,A1,A0
D15 to D0(WRITE DATA)
Write all (WRAL)
(2,3)
1
00
0 1 * * * * *B2,B1,B0
D15 to D0(WRITE DATA)
1
00
0 0 * * * * * * * *
-
Write disable (WDS)
・ Input the address and the data in MSB-first order.
・ As for *, input either VIH or VIL.
*Start bit
Acceptance of all the commands of this IC starts at recognition of the start bit.
The “Start Bit” means the first “1” input after the rise of CS.
(1) For READ, after setting the command, the data output of the selected address starts. Then, in a sequential order of addresses,
the data of the next address will be outputted, and will continuously output data of succeeding addresses with the use of a continuous SK clock input.
(Auto-Increment Function)
(2) When the WRITE and the WRITE-All commands are executed, the previous data written in the selected memory cell are automatically deleted first, then the
input data is written next.
(3) For the write all command, data written in memory cell of the areas designated by B2, B1, and B0 are automatically deleted, and input data is written in bulk.
Write All Area
B2 B1 B0
Write area
0
0
0
000h to 07Fh
0
0
1
080h to 0FFh
0
1
0
100h to 17Fh
0
1
1
180h to 1FFh
1
0
0
200h to 27Fh
1
0
1
280h to 2FFh
1
1
0
300h to 37Fh
1
1
1
380h to 3FFh
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TSZ22111・15・001
・The write all command is written in bulk in 2Kbit unit.
The write area can be selected up to 3bit. Confirm on
the left side the settings and write areas of B2, B1, and B0.
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BR93H86RF-2LB
Timing Chart
~
~
~
~
~
~
1) Read Cycle (READ)
CS
~
~
*1
2
3
5
4
29
~
~
1
0
~
~
SK
30
~
~
1
1
0
A9
A1
~
~
DI
A0
~
~
~
~
*2
~
~
D14
D1
D0
D15 D14
~
~
D15
~
~
0
DO
High-Z
(1) Start bit
When data “1” is input for the first time after the rise of CS, this will be recognized as the start bit. And, even if multiple “0” are input after the rise of CS, the
first “1” input will still be recognized as the start bit, and the following operation starts. This is common to all the commands that will be discussed hereafter.
(2) The succeeding address’ data output
(Auto-Increment Function)
Figure 30. Read Cycle
○When the READ command is recognized, the data (16bit) of the selected address is output to serial. And at that moment,
“0” (dummy bit) is output first, in sync with address bit A0 and with the rise of SK. Afterwhich, the main data is output in
sync with the rise of SK.
This IC has Address Auto Increment Function available only for READ command. wherein after executing READ
command on the first selected address, the data of the next address is read. And this will continue in a sequential
order of addresses with the use of a continuous SK clock input, and by keeping CS at “H” during auto-increment.
2) Write Cycle (WRITE)
~
~
~
~
~
~
tCS
CS
3
2
5
4
n
29
A1
A0
D15
D14
D1
D0
~
~
Am
9
~
~
1
~
~
0
~
~
1
~
~
~
~
DI
~
~
1
0
~
~
~
~
SK
STATUS
tSV
READY
~
~
BUSY
DO
High-Z
Figure 31. Write Cycle
tE/W
○In this command, input 16-bit data (D15 to D0) are written to a designated address (A9 to A0). The actual write starts
th
th
from the fall of CS, after D0 is sampled with SK clock (29 clock from the start bit input), to the rise of the 30 clock.
When STATUS is not detected (CS="L" fixed), WRITE time is 4ms (Max) in conformity with tE/W. And when STATUS is
detected (CS="H"), all commands are not accepted for areas where "L" (BUSY) is output from D0. Therefore, do not
input any command.
Write is not made or canceled if CS starts to fall after the rise of the 30th clock.
Note: Take tSKH or more from the rise of the 29th clock to the fall of CS.
3) Write All Cycle (WRAL)
tCS
CS
SK
0
DI
1
1
3
2
0
0
5
4
0
1
m
11
B2
STATUS
n
29
B1
B0
D15
D1
D0
tSV
DO
BUSY
READY
High-Z
tE/W
Figure 32. Write all Cycle
○In this command, input 16-bit data is written simultaneously to all addresses. Data is written in bulk at a write time of
only 4ms (Max) in conformity with tE/W. When writing data to all addresses, designate each block by B2, B1, and B0,
and execute write. Write time is Max.4ms.
th
The actual write starts from the fall of CS, after D0 is sampled with SK clock (29 clock from the start bit input), to the
th
th
rise of the 30 clock. If CS was ended after the rise of the 30 clock, command is canceled, and write is not
completed.
Note: Take tSKH or more from the rise of the 29th clock to the fall of CS.
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4) Write Enable (WEN) / Disable (WDS) Cycle
~
~
CS
2
3
4
5
6
7
8
13
~
~
1
SK
1
0
0
~
~
DI
~
~
ENABLE=1 1
DISABLE=0 0
DO
High-Z
Figure 33. Write Enable (WEN) / Disable (WDS) Cycle
○At power on, this IC is in Write Disable status by the internal RESET circuit. Before executing the WRITE command, it is
necessary to execute the Write Enable Command first. And, once this command is executed, writing is valid until the
Write Disable Command is executed or the power is turned off. However, the READ command is valid regardless of
whether Write Enable / Disable command is executed. Input to SK after 6 clocks of this command is available by either
“H” or “L”, but be sure to input it.
○When the Write Enable Command is executed after power on, Write Enable status gets in. When the Write Disable
command is executed then, the IC gets in Write Disable Status as same as at power on, and then the WRITE command
is canceled thereafter in software manner. However, the READ command is still executable. In Write Enable status, even
when the WRITE command is input by mistake, writing will still continue. To prevent such a mistake, it is recommended
to execute the Write Disable command after the completion of each WRITE execution.
Application
1) Method to cancel each command
○READ
Start bit
Ope code
Address
1bit
2bit
10bit
Data
16bit
Cancel is available in all areas in read mode.
●Method to cancel:cancel by CS =“L”
Figure 34. Read Cancel Available Timing
○WRITE, WRAL
・Rise of 29th clock
SK
DI
Start bit
1bit
Ope code
Address
2bit
10bit
28
29
30
31
D1
D0
a
c
b
Enlarged Figure
Data
tE/W
16bit
a
b
a:From start bit to 29th clock rise
Cancel by CS=“L”
b:29th clock rise and after
Cancellation is not available by any means. If Vcc is turned OFF in this area,
designated address data is not guaranteed, therefore write once again.
c:30th clock rise and after
Cancel by CS=“L”
However, when write is started in b area (CS is ended), cancellation is not
available by any means.
And when SK clock is input continuously, cancellation is not available.
C
Note 1) If Vcc is turned OFF in this area,
designated address data is not guaranteed,
therefore, it is recommended to execute WRITE once
again.
Note 2) If CS is started at the same timing as that of
the SK rise, write execution/cancel becomes
unstable. Therefore, it is recommended to set CS to
“L” in SK=”L” area. As for SK rise, recommend timing
is tCSS/tCSH or higher.
Figure 35. Write, Wral Cancel Available Timing
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2)
I/O Equivalent Circuit
○Output Circuit
DO
OEint.
Figure 36. Output Circuit (DO)
○Input circuit
RESET int.
CSint.
CS
Figure 37. Input Circuit (CS)
EN
SKint.
SK
Figure 38. Input Circuit (SK)
EN
DIint.
DI
Figure 39. Input Circuit (DI)
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3)
I/O Peripheral Circuit
3-1) Pull Down CS
By making CS=“L” at power ON/OFF, mistake in operation and mistake write are prevented.
○Pull down Resistance Rpd of CS pin
To prevent mistake in operation and mistake write at power ON/OFF, a CS pull down resistor is necessary.
Select an appropriate resistance value from microcontroller’s VOH, IOH and this IC’s VIH characteristics.
Microcontroller
EEPROM
VOHM
IOHM
Rpd
VOHM
IOHM
・・・①
VOHM ≧
VIHE
・・・②
Example) When VCC =5V, VIHE=3.5V, VOHM=4.0V, IOHM=2mA,
from equation ①,
VIHE
“H” output
Rpd ≧
“L” input
Rpd ≧
∴
Figure 40. CS Pull Down Resistance
Rpd ≧
4.0
-3
2×10
2.0 [kΩ]
With the value of Rpd to satisfying the equation above, VOHM
becomes 4.0V or higher, and with VIHE (=3.5V), equation ② is also
satisfied.
・VIHE
・VOHM
・IOHM
: EEPROM VIH specifications
: Microcontroller VOH specifications
: Microcontroller IOH specifications
3-2) DO is available for both pull up and pull down.
DO output is “High-Z” except during READY / BUSY output timing in WRITE command and, after data output at READ
command. When malfunction occurs at “High-Z” input of the microcontroller port connected to DO, it is necessary to pull
down and pull up DO. When there is no influence upon the microcontroller actions, DO may be left OPEN. If DO is
OPEN during a transition of output from BUSY to READY status, and at an instance where CS=“H”, SK=“H”, DI=“H”,
EEPROM recognizes this as a start bit, resets READY output, and sets DO=”High-Z”. Therefore, READY signal cannot
be detected. To avoid such output, pull up DO pin for improvement.
CS
CS “H”
SK
SK
Enlarged
DI
D0
DI
High-Z
READY
DO
DO BUSY
BUSY
High-Z
CS=SK=DI=”H”
When DO=OPEN
Improvement by DO pull up
DO
BUSY
READY
CS=SK=DI=”H”
When DO=pull up
Figure 41. Ready Output Timing at DO=OPEN
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○Pull-up Resistance Rpu and Pull down Resistance Rpd of DO pin
As for pull-up and pull-down resistance value, select an appropriate value to this resistance value from microcontroller
VIH, VIL, and VOH, IOH, VOL, IOL characteristics of this IC.
Microcontroller
EEPROM
Rpu
IOLE
VILM
Vcc-VOLE
IOLE
≦ VILM
Rpu ≧
・・・③
VOLE
・・・④
Example) When VCC =5V, VOLE=0.4V, IOLE=2.1mA, VILM=0.8V,
from the equation ③,
VOLE
Rpu ≧
“L” input
∴
“L” output
Rpu ≧
With the value of Rpu to satisfy the above equation, VOLE becomes 0.4V
or below, and with VILM(=0.8V), the equation ④ is also satisfied.
・VOLE
・IOLE
・VILM
・VOLE
・IOLE
・VILM
Figure 42. DO Pull up Resistance
: EEPROM VOL specifications
: EEPROM IOL specifications
: Microcontroller VIL specifications
Rpd ≧
VOHE ≧
EEPROM
Microcontroller
VOHE
IOHE
・・・⑤
・・・⑥
VIHM
Example) When VCC =5V, VOHE=4.8V, IOHE=0.1mA,
VIHM=3.5V from the equation ⑤
VIHM
VOHE
Rpd ≧
“H” input
5-0.4
2.1×10-3
2.2 [kΩ]
Rpd
IOHE
“H” output
∴
Rpd ≧
5-0.2
0.1×10-3
48 [kΩ]
With the value of Rpd to satisfy the above equation, VOHE becomes
4.8V or below, and with VIHM (=3.5V), the equation ⑥ is also satisfied.
Figure 43. Do Pull down Resistance
・VOHE
・IOHE
・VIHM
: EEPROM VOH specifications
: EEPROM IOH specifications
: Microcontroller VIH specifications
○READY / BUSY Status Display (DO terminal)
This display outputs the internal status signal. When CS is started after tCS (Min.200ns)
from CS fall after write command input, “H” or “L” output.
R/B display=“L” (BUSY) = write under execution
After the timer circuit in the IC works and creates the period of tE/W, this time circuit completes automatically.
And write to the memory cell is made in the period of tE/W, and during this period, other command is not
accepted.
(DO status)
R/B display = “H” (READY) = command wait status
Even after tE/W (Max.4ms) from write of the memory cell, the following command is accepted.
Therefore, CS=“H” in the period of tE/W, and when input is in SK, DI, malfunction may occur. Therefore, set
DI=“L” in the area CS=“H”. (Especially, in the case of shared input port, attention is required.)
(DO status)
*Do not input any command while status signal is output. Command input in BUSY area is canceled, but command input in READY area is accepted.
Therefore, status READY output is canceled, and malfunction and mistake write may be made.
STATUS
CS
SK
CLOCK
DI
WRITE
INSTRUCTION
DO
High-Z
tSV
READY
BUSY
Figure 44. R/B Status Output Timing Chart
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4) When to Directly Connect DI and DO
This IC has independent input terminal DI and output terminal DO, in wherein signals are handled sparately on timing chart.
But by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by only 1 control line.
Microcontroller
EEPROM
DI/O PORT
DI
R
DO
Figure 45. DI, DO Control Line Common Connection
○Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input.
Drive from the microcontroller DI/O output to DI input on I/O timing, and signal output from DO output occur at the
same time in the following points.
4-1) 1 clock cycle to take in A0 address data at read command
Dummy bit “0” is output to DO terminal.
→When address data A0 = “1” input, through current route occurs.
EEPROM CS input
“H”
EEPROM SK input
A1
EEPROM DI input
A0
Collision of DI input and DO output
EEPROM DO output
0
High-Z
Microcontroller DI/O port
A1
D15 D14 D13
A0
Microcontroller output
High-Z
Microcontroller input
Figure 46. Collision Timing at Read Data Output at DI, DO Direct Connection
4-2) Timing of CS = “H” after write command. DO terminal in READY / BUSY function output.
When the next start bit input is recognized, “HIGH-Z” gets in.
→Especially, at command input after write, when CS input is started with microcontroller DI/O output “L”,
READY output “H” is output from DO terminal, and through current route occurs.
Feedback input at timing of these 4-1) and 4-2) does not cause disorder in basic operations, if resistance R is inserted.
~
~
EEPROM SK input
Write command
EEPROM DI input
Write command
EEPROM DO output
Write command
~
~
Write command
~
~
EEPROM CS input
~
~
~
~
~
~
READY
~
~
~
~
BUSY
READY
High-Z
Collision of DI input and DO output
BUSY
Microcontroller output
Microcontroller input
~
~
Write command
~
~
Microcontroller DI/O port
READY
Microcontroller output
Figure 47. Collision Timing at DI, DO Direct Connection
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○Selection of resistance value R
The resistance R becomes through current limit resistance at data collision. When through current flows, noises of
power source line and instantaneous stop of power source may occur. When allowable through current is defined as I,
the following relation should be satisfied. Determine allowable current amount in consideration of impedance and so
forth of power source line in set. And insert resistance R, and set the value R to satisfy EEPROM input level VIH/VIL, even
under influence of voltage decline owing to leak current and so forth. Insertion of R will not cause any influence upon
basic operations.
4-3) Address Data A0 = “1” Input, dummy bit “0” Output Timing
(When microcontroller DI/O output is “H”, EEPROM DO outputs “L”, and “H” is input to DI)
・Make the through current to EEPROM 10mA or below.
・See to it that the input level VIH of EEPROM should satisfy the following.
Condition
Microcontroller
VOHM ≦ VIHE
EEPROM
VOHM ≦ IOHM×R + VOLE
DI/O PORT
At this moment, if VOLE=0V,
DI
VOHM ≦ IOHM×R
VOHM
“H” output
R
IOHM
∴
DO
・VIHE
・VOLE
・VOHM
・IOHM
VOLE
“L” output
VOHM
・・・⑦
IOHM
: EEPROM VIH specifications
: EEPROM VOL specifications
: Microcontroller VOH specifications
: Microcontroller IOH specifications
R ≧
Figure 48. Circuit at DI, DO Direct Connection (Microcontroller DI/O “H” output, EEPROM “L” output)
4-4) DO Status READY Output Timing
(When the microcontroller DI/O is “L”, EEPROM DO outputs “H”, and “L” is input to DI)
・Set the EEPROM input level VIL so as to satisfy the following.
Condition
Microcontroller
“L” output
EEPROM
DI/O PORT
VOLM ≧ VILE
DI
VOLM ≧ VOHE – IOLM×R
As this moment, if VOHE=Vcc,
VOLM
VOLM ≧ Vcc – IOLM×R
R
IOHM
DO
VOHE
∴
R ≧
Vcc – VOLM
IOLM
・・・⑧
“H” output
・VILE
・VOHE
・VOLM
・IOLM
: EEPROM VIL specifications
: EEPROM VOH specifications
: Microcontroller VOL specifications
: Microcontroller IOL specifications
Example) When Vcc=5V, VOHM=5V, IOHM=0.4mA, VOLM=0.4V, IOLM=2.1mA,
From the equation ⑦,
R ≧
R ≧
∴
R ≧
From the equation ⑧,
VOHM
R ≧
IOHM
5
0.4×10
R ≧
-3
12.5 [kΩ]
・・・⑨
∴
R ≧
Vcc – VOLM
IOLM
5 – 0.4
2.1×10-3
2.2 [kΩ]
・・・⑩
Therefore, from the equations ⑨ and ⑩,
∴
R ≧
12.5 [kΩ]
Figure 49. Circuit at DI, DO Direct Connection (Microcontroller DI/O “L” output, EEPROM “H” output)
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5) Power-Up/Down Conditions
・At power ON/OFF, set CS “L”.
When CS is “H”, this IC gets in input accept status (active). At power ON, set CS “L” to prevent malfunction from noise.
(When CS is in “L” status, all inputs are canceled.) At power decline low power status may prevail. Therefore, at power
OFF, set CS “L” to prevent malfunction from noise.
VCC
VCC
GND
VCC
CS
GND
Bad example
Good example
Figure 50. Timing at Power ON/OFF
(Bad example)CS pin is pulled up to Vcc.
(Good example)It is “L” at power ON/OFF.
In this case, CS becomes “H” (active status), EEPROM may
Set 10ms or higher to recharge at power OFF.
malfunction or have write error due to noises. This is true even
When power is turned on without observing this condition,
when CS input is High-Z.
IC internal circuit may not be reset.
○POR Circuit
This IC has a POR (Power On Reset) circuit as a mistake write countermeasure. After POR action, it gets in write
disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. However, if CS is
“H” at power ON/OFF, it may become write enable status owing to noises and the likes. For secure actions, observe the
following conditions.
1. Set CS=”L”
2. Turn on power so as to satisfy the recommended conditions of tR, tOFF, Vbot for POR circuit action.
tR
VCC
Recommended conditions of tR, tOFF, Vbot
tR
tOFF
Vbot
tO F F
Vbot
10m s or below 10m s or higher
0.3V or below
100m s or below 10m s or higher
0.2V or below
0
Figure 51. Rise Waveform Diagram
○LVCC circuit
LVCC (VCC-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write.
At LVCC voltage (Typ=1.9V) or below, it prevents data rewrite.
6) Noise Countermeasures
○VCC Noise (Bypass Capacitor)
When noise or surge gets in the power source line, malfunction may occur. Therefore, in removing these, it is
recommended to attach a bypass capacitor (0.1μF) between IC VCC and GND as close to IC as possible. It is also
recommended to attach a bypass capacitor between board VCC and GND.
○SK Noise
When the rise time (tR) of SK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock
bit displacement.
To avoid this, a Schmitt trigger circuit is built in SK input. The hysteresis width of this circuit is set about 0.2V. If noise
exists at SK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise time (tR) of SK to
100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures. Make the clock
rise, fall time as small as possible.
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Operational Notes
(1) Described numeric values and data are design representative values, and the values are not guaranteed.
(2) Application Circuit
Although we can recommend the application circuits contained herein with a relatively high degree of confidence, we
ask that you verify all characteristics and specifications of the circuit as well as its performance under actual conditions.
Please note that we cannot be held responsible for problems that may arise due to patent infringements or
noncompliance with any and all applicable laws and regulations.
(3) Absolute Maximum Ratings
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit
between pins or an open circuit between pins. Therefore, it is important to consider circuit protection measures, such as
adding a fuse, in case the IC is operated over the absolute maximum ratings.
(4) Ground Voltage
The voltage of the ground pin must be the lowest voltage of all pins of the IC at all operating conditions. Ensure that no
pins are at a voltage below the ground pin at any time, even during transient condition.
(5) Thermal Consideration
Use a thermal design that allows for a sufficient margin by taking into account the permissible power dissipation (Pd) in
actual operating conditions. Consider Pc that does not exceed Pd in actual operating conditions (Pc≥Pd).
Package Power Dissipation
: Pd (W)=(Tjmax-Ta)/θja
Power Dissipation
: Pc (W)=(Vcc-Vo)×Io+Vcc×Ib
Tjmax : Maximum junction temperature=150℃, Ta : Peripheral temperature[℃] ,
θja : Thermal resistance of package-ambience[℃/W], Pd : Package Power dissipation [W],
Pc : Power dissipation [W], Vcc : Input Voltage, Vo : Output Voltage, Io : Load, Ib : Bias Current
(6)
Short Between Pins and Mounting Errors
Be careful when mounting the IC on printed circuit boards. The IC may be damaged if it is mounted in a wrong
orientation or if pins are shorted together. Short circuit may be caused by conductive particles caught between the pins.
(7) Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
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Part Numbering
B R 9 3 H 8 6 R F
-
2
L B H
2
BUS Type
93: Microwire BUS
Operating temperature
H: -40°C to +125°C
Capacity
86 = 16Kbit
Package
RF : SOP8
Process code
Product class
LB for Industrial applications
Package specifications
H2:reel shape emboss taping (SOP8)
Package
Capacity
16K
Orderable Part Number
Type
Quantity
SOP8
Reel of 250
BR93H86RF-2LBH2
Marking Diagram
SOP8(TOP VIEW)
Part Number Marking
R
H
8
6
LOT Number
1PIN MARK
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Physical Dimensions Tape and Reel Information
Package Name
SOP8
Max 5.35 (include. BURR)
Drawing: EX112-5001-1
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Revision History
Date
Revision
15.Nov.2013
001
New Release
27.Feb.2014
002
Delete sentence “and log life cycle” in General Description and Futures.
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Notice
Precaution on using ROHM Products
1.
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice - SS
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - SS
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.001
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