Si6880EDQ Datasheet

Si6880EDQ
New Product
Vishay Siliconix
N-Channel 1.8-V (G-S) Battery Switch, ESD Protection
PRODUCT SUMMARY
VDS (V)
20
FEATURES
D TrenchFETr Power MOSFET
D ESD Protected: 4000 V
D Common Drain
rDS(on) (Ω)
ID (A)
0.018 @ VGS = 4.5 V
7.5
0.022 @ VGS = 2.5 V
6.5
APPLICATIONS
0.026 @ VGS = 1.8 V
6.0
D 1-2 Cell Battery Protection Circuitry
D
D
TSSOP-8
D
1
S1
2
S1
3
G1
4
D
Si6880EDQ
8 D
7 S2
*1.5 kW
*1.5 kW
G1
G2
6 S2
5 G2
Top View
S1
S2
N-Channel
N-Channel
*Typical value by design
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
T20
Gate-Source Voltage
VGS
"12
Continuous Drain Current (TJ = 150_C)
_ a
TA = 25_C
TA = 70_C
Pulsed Drain Current (10 ms Pulse Width)
7.5
ID
Continuous Source Current (Diode Conduction)a
IS
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
PD
V
6
6
IDM
5
A
30
1.6
1.08
1.78
1.19
1.14
0.76
TJ, Tstg
Unit
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 10 sec.
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot
(Drain)a
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
55
70
85
105
35
45
Unit
_C/W
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Document Number: 71690
S-05238—Rev. B, 17-Dec-01
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Si6880EDQ
New Product
Vishay Siliconix
SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Min
VGS(th)
VDS = VGS, ID = 250 mA
0.45
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Diode Forward
Voltagea
VDS = 0 V, VGS = "4.5 V
"250
nA
VDS = 0 V, VGS = "12 V
"10
mA
VDS = 16 V, VGS = 0 V
1
VDS = 16 V, VGS = 0 V, TJ = 70_C
25
VDS w 5 V, VGS = 4.5 V
20
m
mA
A
VGS = 4.5 V, ID = 7.5 A
0.015
0.018
VGS = 2.5 V, ID = 6.5 A
0.017
0.022
VGS = 1.8 V, ID = 6.0 A
0.020
0.026
gfs
VDS = 10 V, ID = 7.5 A
39
VSD
IS = 1.6 A, VGS = 0 V
0.65
1.1
27
40
VDS = 10 V, VGS = 4.5 V, ID = 7.5 A
3.0
rDS(on)
Forward Transconductancea
V
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
nC
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
1.5
2.3
tr
800
1200
6
10
5.5
10
Rise Time
Turn-Off Delay Time
5.5
VDD = 10 V, RL = 10 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
td(off)
Fall Time
tf
m
ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30
30
VGS = 5 thru 2 V
24
I D – Drain Current (A)
I D – Drain Current (A)
24
1.5 V
18
12
6
18
12
TC = 125_C
6
25_C
–55_C
0
0
1
2
3
4
VDS – Drain-to-Source Voltage (V)
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2
5
0
0.0
0.5
1.0
1.5
2.0
VGS – Gate-to-Source Voltage (V)
Document Number: 71690
S-05238—Rev. B, 17-Dec-01
Si6880EDQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Gate Charge
5
V GS – Gate-to-Source Voltage (V)
r DS(on) – On-Resistance ( W )
0.04
0.03
VGS = 1.8 V
0.02
VGS = 2.5 V
VGS = 4.5 V
0.01
0.00
VDS = 10 V
ID = 7.5 A
4
3
2
1
0
0
6
12
18
24
30
0
6
ID – Drain Current (A)
On-Resistance vs. Junction Temperature
24
30
Source-Drain Diode Forward Voltage
30
VGS = 4.5 V
ID = 7.5 A
TJ = 150_C
I S – Source Current (A)
1.4
1.2
1.0
10
TJ = 25_C
0.8
0.6
–50
1
0
50
100
150
0
TJ – Junction Temperature (_C)
0.4
0.2
0.6
0.8
1.0
1.2
VSD – Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
0.4
0.060
0.2
0.048
ID = 7.5 A
V GS(th)Variance (V)
rDS(on)– On-Resistance ( W )
18
Qg – Total Gate Charge (nC)
1.6
r DS(on) – On-Resistance ( W )
(Normalized)
12
0.036
0.024
ID = 250 mA
–0.0
–0.2
–0.4
0.012
0.000
0
2
4
6
VGS – Gate-to-Source Voltage (V)
Document Number: 71690
S-05238—Rev. B, 17-Dec-01
8
–0.6
–50
–25
0
25
50
75
100
125
150
TJ – Temperature (_C)
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Si6880EDQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Single Pulse Power
100
Power (W)
80
60
40
20
0
0.01
0.1
1
10
30
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 85_C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
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4
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71690
S-05238—Rev. B, 17-Dec-01
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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or in any other disclosure relating to any product.
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Document Number: 91000
Revision: 18-Jul-08
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