IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • • - 100 RDS(on) (Ω) VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S DPAK (TO-252) IPAK (TO-251) Dynamic dV/dt Rating Repetitive Avalanche Rated Surface Mount (IRFR9110/SiHFR9110) Straight Lead (IRFU9110/SiHFU9110) Available in Tape and Reel P-Channel Fast Switching Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU Series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications. G D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb DPAK (TO-252) IRFR9110PbF SiHFR9110-E3 IRFR9110 SiHFR9110 DPAK (TO-252) IRFR9110TRLPbFa SiHFR9110TL-E3a IRFR9110TRLa SiHFR9110TLa DPAK (TO-252) IRFR9110TRPbFa SiHFR9110T-E3a IRFR9110TRa SiHFR9110Ta IPAK (TO-251) IRFU9110PbF SiHFU9110-E3 IRFU9110 SiHFU9110 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) SYMBOL VDS VGS VGS at - 10 V TC = 25 °C TC = 100 °C ID IDM EAS IAR EAR TC = 25 °C TA = 25 °C PD dV/dt TJ, Tstg for 10 s LIMIT - 100 ± 20 - 3.1 - 2.0 - 12 0.20 0.020 140 - 3.1 2.5 25 2.5 - 5.5 - 55 to + 150 260d UNIT V A W/°C mJ A mJ W V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 21 mH, RG = 25 Ω, IAS = - 3.1 A (see fig. 12). c. ISD ≤ - 4.0 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91279 S-81392-Rev. A, 07-Jul-08 www.vishay.com 1 IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - - 110 Maximum Junction-to-Ambient (PCB Mount)a RthJA - - 50 Maximum Junction-to-Case (Drain) RthJC - - 5.0 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance VDS VGS = 0 V, ID = 250 µA - 100 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - - 0.093 - V/°C VGS(th) VDS = VGS, ID = 250 µA - 2.0 - - 4.0 V nA IGSS IDSS RDS(on) gfs VGS = ± 20 V - - ± 100 VDS = - 100 V, VGS = 0 V - - - 100 VDS = - 80 V, VGS = 0 V, TJ = 125 °C - - - 500 - - 1.2 Ω 0.97 - - S - 200 - - 94 - - 18 - - - 8.7 - - 2.2 ID = - 1.9 Ab VGS = - 10 V VDS = - 50 V, ID = - 1.9 A µA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 VGS = - 10 V ID = - 4.0 A, VDS = - 80 V, see fig. 6 and 13b pF nC Gate-Drain Charge Qgd - - 4.1 Turn-On Delay Time td(on) - 10 - - 27 - - 15 - - 17 - - 4.5 - - 7.5 - - - - 3.1 - - - 12 - - - 5.5 V - 80 160 ns - 0.17 0.30 µC Rise Time Turn-Off Delay Time Fall Time tr td(off) VDD = - 50 V, ID = - 4.0 A, RG = 24 Ω, RD = 11 Ω, see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = - 3.1 A, VGS = 0 Vb TJ = 25 °C, IF = - 4.0 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91279 S-81392-Rev. A, 07-Jul-08 IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91279 S-81392-Rev. A, 07-Jul-08 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91279 S-81392-Rev. A, 07-Jul-08 IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix RD VDS VGS D.U.T. RG +VDD - 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit td(on) tr td(off) tf VGS 10 % 90 % VDS Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91279 S-81392-Rev. A, 07-Jul-08 www.vishay.com 5 IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix L Vary tp to obtain required IAS IAS VDS D.U.T RG VDS + V DD VDD IAS tp - 10 V 0.01 Ω tp Fig. 12a - Unclamped Inductive Test Circuit VDS Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG - 10 V 12 V 0.2 µF 0.3 µF QGS - QGD D.U.T. VG + VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91279 S-81392-Rev. A, 07-Jul-08 IRFR9110, IRFU9110, SiHFR9110, SiHFU9110 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG + • dV/dt controlled by RG • ISD controlled by duty factor "D" • D.U.T. - device under test + - VDD Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % * ISD VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91279. Document Number: 91279 S-81392-Rev. A, 07-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1