2SA1 61 1 TRANSISTOR(PNP) FEATURES SOT–323 High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -60 V 2. EMITTER VCEO Collector-Emitter Voltage -50 V 3. COLLECTOR VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA PC Collector Power Dissipation 150 mW Thermal Resistance From Junction To Ambient 833 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-off current ICBO VCB=-60V, IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V, IC=0 -100 nA DC current gain hFE* VCE=-6V, IC=-1mA Collector-emitter saturation voltage Collector-emitter voltage Transition frequency Collector output capacitance VCE(sat) 90 600 IC=-100mA, IB=-10mA V -0.68 V VBE VCE=-6V, IC=-1mA fT VCE=-6V,Ic=-10mA 180 MHz VCB=-10V, IE=0, f=1MHz 4.5 pF Cob -0.58 -0.3 *Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE RANK M4 M5 M6 M7 RANGE 90–180 135–270 200–400 300–600 MARKING M4 M5 M6 M7 １ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５