SavantIC Semiconductor Product Specification 2SA1679 Silicon PNP Power Transistors DESCRIPTION ·With ITO-220 package ·Switching power transistor ·Low collector saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -40 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -5 A ICM Collector current-Peak -10 A IB Base current -1.5 A IBM Base current-Peak -2 A PT Total power dissipation 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 5.0 UNIT /W SavantIC Semiconductor Product Specification 2SA1679 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX -40 UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=-0.05A ;IB=0 V VCEsat Collector-emitter saturation voltage IC=-2.5A; IB=-0.13A -0.3 V VBEsat Base-emitter saturation voltage IC=-2.5A; IB=-0.13A -1.2 V Collector cut-off current At rated volatge -0.1 mA IEBO Emitter cut-off current At rated volatge -0.1 mA hFE DC current gain IC=-2.5A ; VCE=-2V Transition frequency IC=-0.5A ; VCE=-10V ICBO ICEO fT 70 50 MHz Switching times ton Turn-on time ts Storage time tf Fall time IC=-2.5A;IB1=-IB2=-0.25A , RL=12B;VBB2=-4V 2 0.3 µs 1.5 µs 0.5 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 2SA1679