SUM60P05-11LT Vishay Siliconix P-Channel 55-V (D-S) MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) - 55 rDS(on) (Ω) ID (A) 0.011 at VGS = - 10 V - 60a 0.0175 at VGS = - 4.5 V - 60a • TrenchFET® Power MOSFETS Plus Temperature Sensing Diode • 175 °C Junction Temperature • Low Thermal Resistance Package Available RoHS* COMPLIANT APPLICATIONS D2PAK-5L • Industrial S T1 1 2 3 4 5 D1 G G S T2 T1 Ordering Information: SUM60P05-11LT SUM60P05-11LT-E3 (Lead (Pb)-free) D2 T2 D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS - 55 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)d TC = 25 °C TC = 100 °C ID - 60a - 250 Continuous Diode Current (Diode Conduction)d IS - 60a Avalanche Current IAR - 60a EAR 180 Repetitive Avalanche Energy b Maximum Power Dissipationa L = 0.1 mH TC = 25 °C TA = 25 °C Operating Junction and Storage Temperature Range PD V - 60a IDM Pulsed Drain Current Unit 200c 3.75d A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 0.75 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientd PCB Mountd Junction-to-Case °C/W Notes: a. Package limited. b. Duty cycle ≤ 1 %. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 71748 S-80274-Rev. B, 11-Feb-08 www.vishay.com 1 SUM60P05-11LT Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VGS = 0 V, ID = - 250 µA - 55 VGS(th) VDS = VGS, IDS = - 250 µA -1 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) ± 100 VDS = - 44 V, VGS = 0 V -1 VDS = - 44 V, VGS = 0 V, TJ = 175 °C - 250 VDS = - 5 V, VGS = - 10 V - 120 VGS = - 10 V, ID = - 30 A Drain-Source On-State Resistancea rDS(on) V nA µA A 0.009 0.011 VGS = - 10 V, ID = - 30 A, TJ = 125 °C 0.0175 VGS = - 10 V, ID = - 30 A, TJ = 175 °C 0.022 VGS = - 4.5 V, ID = - 20 A Ω 0.0175 Sense Diode Forward Voltage VFD VDS = - 25 V, IF = - 250 µA - 770 - 830 Sense Diode Forward Voltage Increase ΔVF From IF = - 125 µA to IF = - 250 µA - 25 - 55 Forward Transconductancea gfs VDS = - 25 V, ID = - 30 A 50 mV S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg c Gate-Source Charge Qgs Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) c tr Turn-Off Delay Timec td(off) Rise Time Fall Timec 6450 VGS = 0 V, VDS = - 25 V, f = 1 MHz pF 1050 520 107 VDS = - 30 V, VGS = - 10 V, ID = - 60 A nC 28 22 VDD = - 30 V, RL = 0.6 Ω ID ≅ - 60 A, VGEN = - 10 V, RG = 2.5 Ω tf 15 25 190 325 145 220 265 450 ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS - 60 Pulsed Current ISM - 200 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = - 60 A, VGS = 0 V trr IRM(REC) Qrr IF = - 60 A, di/dt = 100 A/µs A - 1.1 - 1.5 V 55 110 ns - 1.6 - 2.0 A 0.04 12 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 71748 S-80274-Rev. B, 11-Feb-08 SUM60P05-11LT Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 250 200 VGS = 10 thru 6 V TC = - 55 °C 200 5V I D - Drain Current (A) I D - Drain Current (A) 160 120 80 4V 25 °C 150 125 °C 100 50 40 3V 0 0 0 2 4 6 8 0 10 1 2 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.030 100 TC = - 55 °C 25 °C r DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 80 125 °C 60 40 20 0.024 0.018 VGS = 4.5 V 0.012 VGS = 10 V 0.006 0.000 0 0 20 40 60 80 100 0 120 20 40 VGS - Gate-to-Source Voltage (V) 80 100 120 I D - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 8000 VGS - Gate-to-Source Voltage (V) Ciss 6000 C - Capacitance (pF) 60 4000 2000 Coss Crss 0 0 VGS = 30 V ID = 50 A 16 12 8 4 0 11 22 33 44 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 71748 S-80274-Rev. B, 11-Feb-08 55 0 50 100 150 200 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUM60P05-11LT Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 100 VGS = 10 V ID = 30 A I S - Source Current (A) (Normalized) r DS(on) - On-Resistance 1.6 1.2 0.8 TJ = 150 °C 10 TJ = 25 °C 0.4 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.2 TJ - Junction Temperature (°C) 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1000 70 ID = 250 µA 65 IAV (A) at TA = 150 °C 10 IAV (A) at TA = 25 °C V(BR)DSS (V) I Dav (A) 100 60 55 1 0.1 0.00001 0.001 0.0001 0.1 0.01 50 - 50 1 - 25 0 25 50 75 100 125 tin (s) TJ - Junction Temperature (°C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature 1.0 150 175 0.01 0.8 ID = 250 µA 0.001 ID = 125 µA I F (A) VF (V) 0.6 TJ = 150 °C 0.0001 0.4 TJ = 25 °C 0.00001 0.2 0.0 0.000001 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Sense Diode Forward Voltage vs. Temperature www.vishay.com 4 0 0.2 0.4 0.6 0.8 1.0 VF (V) Sense Diode Forward Voltage Document Number: 71748 S-80274-Rev. B, 11-Feb-08 SUM60P05-11LT Vishay Siliconix THERMAL RATINGS 70 1000 40 30 20 1 ms 10 ms 10 100 ms DC TC = 25 °C Single Pulse 1 10 0 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) 0.1 0.1 1 * VGS Maximum Avalanche and Drain Current vs. Case Temperature 10 µs 100 µs Limited by rDS(on)* 100 50 I D - Drain Current (A) I D - Drain Current (A) 60 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71748. Document Number: 71748 S-80274-Rev. B, 11-Feb-08 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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