Download AD8229-KGD Data Sheet.

1 nV/√Hz Low Noise 210°C
Instrumentation Amplifier
AD8229-KGD
Known Good Die
FUNCTIONAL BLOCK DIAGRAM
Designed for 210°C operation
Low noise
1 nV/√Hz input noise
45 nV/√Hz output noise
High CMRR
126 dB CMRR (minimum), G = 100
80 dB CMRR (minimum) to 5 kHz, G = 1
Excellent ac specifications
15 MHz bandwidth (G = 1)
1.2 MHz bandwidth (G = 100)
22 V/µs slew rate
THD: 130 dB (1 kHz, G = 1)
Versatile
±4 V to ±17 V dual supply
Gain set with single resistor (G = 1 to 1000)
Temperature range: −40°C to +210°C
Known good die (KGD): these die are fully guaranteed to
data sheet specifications
–IN
+VS
RG
VOUT
RG
REF
+IN
–VS
AD8229-KGD
10107-003
FEATURES
Figure 1.
APPLICATIONS
Down-hole instrumentation
Harsh environment data acquisition
Exhaust gas measurements
Vibration analysis
The AD8229-KGD has been designed for high temperature operation. The process is dielectrically isolated to avoid leakage
currents at high temperatures. The design architecture was chosen
to compensate for the low VBE voltages at high temperatures.
The AD8229-KGD excels at distinguishing tiny signals. It delivers
industry leading 1 nV/√Hz input noise performance. The high
CMRR of the AD8229-KGD prevents unwanted signals from
corrupting the acquisition. The CMRR increases as the gain
increases, offering high rejection when it is most needed.
The AD8229-KGD is one of the fastest instrumentation amplifiers
available. Its current feedback architecture provides bandwidth
that is quite high, even at high gains, for example, 1.2 MHz at
G = 100. With the high bandwidth comes excellent distortion
performance, allowing use in demanding applications such as
vibration analysis.
Gain is set from 1 to 1000 with a single resistor. A reference pin
allows the user to offset the output voltage. This feature is useful
when interfacing with analog-to-digital converters.
Additional application and technical information can be found
in the AD8229 standard product data sheet.
100
80
60
40
20
0
–20
–40
–60
–80
–100
–55 –35 –15
5
25
45
65
85 105 125 145 165 185 205 225
TEMPERATURE (°C)
09412-016
The AD8229-KGD is an ultralow noise instrumentation amplifier
designed for measuring small signals in the presence of large
common-mode voltages and high temperatures.
VOSI (µV)
GENERAL DESCRIPTION
Figure 2. Typical Input Offset vs. Temperature (G = 100)
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
www.analog.com
Tel: 781.329.4700
Fax: 781.461.3113
©2011 Analog Devices, Inc. All rights reserved.
AD8229-KGD
Known Good Die
TABLE OF CONTENTS
Features .............................................................................................. 1
Absolute Maximum Ratings ........................................................6
Applications ....................................................................................... 1
ESD Caution...................................................................................6
General Description ......................................................................... 1
Pad Configuration and Function Descriptions .............................7
Functional Block Diagram .............................................................. 1
Outline Dimensions ..........................................................................8
Revision History ............................................................................... 2
Die Specifications and Assembly Recommendations ..............8
Specifications..................................................................................... 3
Ordering Guide .............................................................................8
REVISION HISTORY
8/11—Revision 0: Initial Version
Rev. 0 | Page 2 of 8
Known Good Die
AD8229-KGD
SPECIFICATIONS
+VS = 15 V, −VS = −15 V, VREF = 0 V, TA = 25°C, G = 1, RL = 10 kΩ, unless otherwise noted.
Table 1.
Parameter
COMMON-MODE REJECTION RATIO (CMRR)
CMRR DC to 60 Hz with
1 kΩ Source Imbalance
G=1
Temperature Drift
G = 10
Temperature Drift
G = 100
Temperature Drift
G = 1000
CMRR at 5 kHz
G=1
G = 10
G = 100
G = 1000
VOLTAGE NOISE
Spectral Density 1: 1 kHz
Input Voltage Noise, eni
Output Voltage Noise, eno
Peak to Peak: 0.1 Hz to 10 Hz
G=1
Test Conditions/Comments
Min
Typ
Max
Unit
VCM = ±10 V
86
134
dB
nV/V/°C
dB
nV/V/°C
dB
nV/V/°C
dB
80
90
90
90
dB
dB
dB
dB
TA = −40°C to +210°C
300
106
TA = −40°C to +210°C
30
126
TA = −40°C to +210°C
TA = −40°C to +210°C
VCM = ±10 V
3
VIN+, VIN− = 0 V
1
45
1.1
50
nV/√Hz
nV/√Hz
2
µV p-p
100
nV p-p
Spectral Density: 1 kHz
1.5
pA/√Hz
Peak to Peak: 0.1 Hz to 10 Hz
100
pA p-p
G = 1000
CURRENT NOISE
VOLTAGE OFFSET
VOS = VOSI + VOSO/G
Input Offset, VOSI
Average TC
Output Offset, VOSO
Average TC
Offset RTI vs. Supply (PSR)
G=1
G = 10
G = 100
G = 1000
INPUT CURRENT
Input Bias Current
High Temperature
Input Offset Current
High Temperature
100
−40°C to +210°C
−40°C to +210°C
VS = ±5 V to ±15 V
−40°C to +210°C
−40°C to +210°C
−40°C to +210°C
−40°C to +210°C
TA = 210°C
TA = 210°C
Rev. 0 | Page 3 of 8
µV
0.1
1
µV/°C
3
1000
10
µV
µV/°C
86
106
126
130
dB
dB
dB
dB
70
200
35
50
nA
nA
nA
nA
AD8229-KGD
Parameter
DYNAMIC RESPONSE
Small Signal Bandwidth – 3 dB
G=1
G = 10
G = 100
G = 1000
Settling Time 0.01%
G=1
G = 10
G = 100
G = 1000
Settling Time 0.001%
G=1
G = 10
G = 100
G = 1000
Slew Rate
G = 1 to 100
GAIN2
Gain Range
Gain Error
G=1
G = 10
G = 100
G = 1000
Gain Nonlinearity
G = 1 to 1000
Gain vs. Temperature
G=1
G > 10
INPUT
Impedance (Pin to Ground)3
Input Operating Voltage Range4
Over Temperature
OUTPUT
Output Swing
High Temperature
Output Swing
High Temperature
Short-Circuit Current
REFERENCE INPUT
RIN
IIN
Voltage Range
Reference Gain to Output
Reference Gain Error
Known Good Die
Test Conditions/Comments
Min
Typ
Max
Unit
15
4
1.2
0.15
MHz
MHz
MHz
MHz
0.75
0.65
0.85
5
µs
µs
µs
µs
0.9
0.9
1.2
7
µs
µs
µs
µs
22
V/µs
10 V step
10 V step
G = 1 + (6 kΩ/RG)
1
1000
V/V
0.03
0.3
0.3
0.3
%
%
%
%
VOUT = ±10 V
0.01
0.05
0.05
0.1
VOUT = −10 V to +10 V
RL = 10 kΩ
2
−40°C to +210°C
−40°C to +210°C
2
ppm
5
−100
ppm/°C
ppm/°C
VS = ±5 V to ±18 V
for dual supplies
−40°C to +210°C
−VS + 2.8
1.5||3
+VS − 2.5
GΩ||pF
V
−VS + 2.8
+VS − 2.5
V
RL = 2 kΩ
−VS + 1.9
+Vs − 1.5
V
TA = 210°C
RL = 10 kΩ
TA = 210°C
−VS + 1.1
−VS + 1.8
−VS + 1.1
+Vs − 1.1
+Vs − 1.2
+Vs − 1.1
V
V
V
mA
35
10
70
VIN+, VIN− = 0 V
−VS
+VS
1
0.01
Rev. 0 | Page 4 of 8
kΩ
µA
V
V/V
%
Known Good Die
Parameter
POWER SUPPLY
Operating Range
Quiescent Current
High Temperature
TEMPERATURE RANGE
For Specified Performance5
AD8229-KGD
Test Conditions/Comments
Min
Typ
Max
Unit
6.7
±17
7
12
V
mA
mA
+210
°C
±4
TA = 210°C
−40
Total Voltage Noise = √(eni2 + (eno/G)2)+ eRG2).
These specifications do not include the tolerance of the external gain setting resistor, RG. For G>1, RG errors should be added to the specifications given in this table.
3
Differential and common-mode input impedance can be calculated from the pin impedance: ZDIFF = 2(ZPIN); ZCM = ZPIN/2.
4
Input voltage range of the AD8229-KGD input stage only. The input range can depend on the common-mode voltage, differential voltage, gain, and reference voltage.
5
Performance at 210°C is guaranteed for 1000 hours assuming that the maximum junction temperature listed in the Absolute Maximum Ratings, Table 2 is not
exceeded.
1
2
Rev. 0 | Page 5 of 8
AD8229-KGD
Known Good Die
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Supply Voltage
Output Short-Circuit Current Duration
Maximum Voltage at –IN, +IN1
Differential Input Voltage1
Gain ≤ 4
4 > Gain > 50
Gain ≥ 50
Maximum Voltage at REF
Storage Temperature Range
Specified Temperature Range
Maximum Junction Temperature
1
Rating
±17 V
Indefinite
±VS
±VS
±50 V/gain
±1 V
±VS
−65°C to +150°C
−40°C to +210°C
245°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
ESD CAUTION
For voltages beyond these limits, use input protection resistors.
Rev. 0 | Page 6 of 8
Known Good Die
AD8229-KGD
PAD CONFIGURATION AND FUNCTION DESCRIPTIONS
ADI Logo
10
1
2
9
3
4
5
6
7
10107-002
8
Figure 3. Pad Configuration
Table 3. Pad Function Descriptions1
Pad No.
1
2
3
4
5
6
7
8
9
10
1
X-Axis (μm)
−661
−661
−661
−661
−661
−661
+682
+538
+626
+717
Y-Axis (μm)
+665
+525
+331
+83
−111
−251
−1231
−839
+337
+979
Mnemonic
−IN
RG
RG
RG
RG
+IN
−VS
REF
VOUT
+VS
Pad Type
Single
Single
Double
Double
Single
Single
Single
Double
Single
Single
Description
Negative Input Pad.
Gain Setting Pad.
Gain Setting Pad.
Gain Setting Pad.
Gain Setting Pad.
Positive Input Pad.
Negative Power Supply Pad.
Reference Voltage Pad.
Output Pad.
Positive Power Supply Pad.
To minimize gain errors introduced by the bond wires, use Kelvin connections between the chip and the gain resistor, RG, by connecting Pad 2 and Pad 3 in parallel to
one end of RG, and connecting Pad 4 and Pad 5 in parallel to the other end of RG. For unity-gain applications where RG is not required, Pad 2 and Pad 3 must be
bonded together as do Pad 4 and Pad 5.
Rev. 0 | Page 7 of 8
AD8229-KGD
Known Good Die
OUTLINE DIMENSIONS
0.493
0.483
0.473
1.755
10
1
2
9
3
2.890
4
5
6
8
SIDE VIEW
TOP VIEW
(CIRCUIT SIDE)
0.092 × 0.092
08-16-2011-A
7
Figure 4. AD8229-KGD Die
1.755 mm × 2.890 mm Die Size
(Dimensions shown in millimeters)
DIE SPECIFICATIONS AND ASSEMBLY RECOMMENDATIONS
Table 4. Die Specifications
Parameter
Chip Size
Scribe Line Width
Die Size
Thickness
Bond Pad
Bond Pad Composition
Backside
Passivation
1
Unit1
μm
μm
mm (maximum)
μm
μm (minimum)
%
N/A
N/A
Value
1665 × 2800
90 × 90
1.755 × 2.890
483 ± 10
92 × 92
0.5 AlCu
Bare
Polymide
N/A means not applicable.
Table 5. Assembly Recommendations
Assembly Component
Die Attach
Bonding Method
Bonding Sequence
Recommendation
No special requirements
Gold ball or aluminum wedge
Any
ORDERING GUIDE
Model
AD8229-KGD-CHIPS
Temperature Range
−40°C to +210°C
©2011 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D10107-0-8/11(0)
Rev. 0 | Page 8 of 8
Package Option
Die Only
Similar pages