MBR30H35PT, MBR30H45PT, MBR30H50PT, MBR30H60PT www.vishay.com Vishay General Semiconductor Dual Common Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Power pack • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • Low leakage current • High forward surge capability 3 • High frequency operation 2 1 • Solder dip 275 °C max.10 s, per JESD 22-B106 TO-247AD (TO-3P) PIN 1 PIN 2 PIN 3 CASE • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, or polarity protection application. PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 30 A VRRM 35 V, 45 V, 50 V, 60 V IFSM 200 A VF 0.58 V, 0.63 V IR 150 μA TJ max. 175 °C Package TO-247AD Diode variations Dual Common Cathode Case: TO-247AD (TO-3P) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR30H35PT MBR30H45PT MBR30H50PT MBR30H60PT UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 V Maximum working peak reverse voltage VRWM 35 45 50 60 V Maximum DC blocking voltage VDC 35 45 50 60 V Maximum average forward rectified current (fig. 1) IF(AV) 30 A Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH EAS 80 mJ Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 200 A IRRM (1) 2.0 1.0 A Peak non-repetitive reverse energy (8/20 μs waveform) ERSM 30 20 mJ Electrostatic discharge capacitor voltage human body model: C = 100 pF, R = 1.5 VC Peak repetitive reverse surge current per diode Voltage rate of change (rated VR) Operating junction temperature range Storage temperature range mJ dV/dt 10 000 V/μs TJ - 65 to + 175 °C TSTG - 65 to + 175 °C Note (1) 2.0 μs pulse width, f = 1.0 kHz Revision: 13-Aug-13 Document Number: 88792 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR30H35PT, MBR30H45PT, MBR30H50PT, MBR30H60PT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum instantaneous forward voltage per diode VF (1) Maximum reverse current at rated VR per diode MBR30H35PT MBR30H45PT TEST CONDITIONS TYP. MAX. MBR30H50PT MBR30H60PT UNIT TYP. MAX. IF = 20 A TJ = 25 °C - 0.66 - 0.74 IF = 20 A TJ = 125 °C 0.54 0.58 0.60 0.63 IF = 30 A TJ = 25 °C - 0.73 - 0.83 IF = 30 A TJ = 125 °C 0.62 0.66 0.66 0.70 TJ = 25 °C - 150 - 150 μA TJ = 125 °C 6.0 25 4.0 25 mA IR (2) V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Thermal resistance, junction to case per diode MBR30H35PT MBR30H45PT RJC MBR30H50PT MBR30H60PT 1.4 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-247AD MBR30H45PT-E3/45 6.13 45 30/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 250 Peak Forward Surge Current (A) Average Forward Current (A) 40 30 20 10 0 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 200 150 100 50 0 0 25 50 75 100 125 150 175 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 13-Aug-13 Document Number: 88792 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR30H35PT, MBR30H45PT, MBR30H50PT, MBR30H60PT www.vishay.com Vishay General Semiconductor 10 000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 TJ = 150 °C TJ = 25 °C 1 TJ = 125 °C 0.1 MBR30H35PT, MBR30H45PT MBR30H50PT, MBR30H60PT 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1000 100 0.01 0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 0.1 1.0 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Leakage Current (mA) 100 TJ = 150 °C 10 1 TJ = 125 °C 0.1 MBR30H35PT, MBR30H45PT MBR30H50PT, MBR30H60PT 0.01 0.001 TJ = 25 °C 1 0.0001 0 20 40 60 80 0.1 0.01 100 0.1 1 10 t - Pulse Duration (s) Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-247AD (TO-3P) 0.645 (16.4) 0.625 (15.9) 0.245 (6.2) 0.225 (5.7) 0.323 (8.2) 0.313 (7.9) 0.203 (5.16) 0.193 (4.90) 30° 0.078 (1.98) REF. 10 0.170 (4.3) 0.840 (21.3) 0.142 (3.6) 0.138 (3.5) 0.820 (20.8) 1 2 10° TYP. Both Sides 3 1° REF. Both Sides 0.086 (2.18) 0.076 (1.93) 0.127 (3.22) 0.160 (4.1) 0.140 (3.5) 0.117 (2.97) 0.118 (3.0) 0.108 (2.7) 0.795 (20.2) 0.775 (19.6) 0.048 (1.22) 0.044 (1.12) 0.225 (5.7) 0.205 (5.2) Revision: 13-Aug-13 0.030 (0.76) 0.020 (0.51) PIN 1 PIN 2 PIN 3 CASE Document Number: 88792 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000