iRoC Report: Radiation Results of the SER Test of Microsemi, Xilinx and Altera FPGA instances

Title: Radiation Results of the
SER Test of Actel, Xilinx and
Altera FPGA instances
Project Name: SER Test of Actel,
Xilinx and Altera FPGA instances
in Dec’03
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Document type:
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Test Report
Version:
0.08
Date:
25-Oct-04
Confidentiality Level:
2
Distribution list:
Eric Dupont
Olivier Lauzeral
Rémi Gaillard
Marcos Olmos
Code Reference:
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
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GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
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GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
Revision History
Version
Author
Date
0.01
Marcos Olmos
15-Jan-04
0.02
Marcos Olmos
22-Jan-04
0.03
Marcos Olmos
2-Mar-04
0.04
Marcos Olmos
8-Mar-04
0.05
0.06
0.06A
0.07
Marcos Olmos
Marcos Olmos
Marcos Olmos
Marcos Olmos
18-Mar-04
25-Mar-04
31 Mar-04
16-Apr-04
0.08
Marcos Olmos
25-Oct-04
Description of change
First release
- Added test strategy copied from the Test Plan [3]
- Added error definitions copied from the Test Plan [3]
- Added Analysis of critical vs non critical SEU in 4.4.2
- Added Bitmaps of errors in 4.4.4
- Added Chip to chip variation in 4.4.5
- Added consistency check in 4.4.6
- Added Special observations in 4.4.7
- Added cosmic ray results of the LANSCE campaign in Feb
04.
- Completed cosmic ray results of the LANSCE campaign in
Feb 04.
- Added FIT at 5,000 ft
- Linked excel files copied in appendix A
- Added executive summary
- Minor typographical errors corrected
- Added alpha results for AX1000 and XC3S1000
- Added alpha results for APA1000
- Added alpha results for XC2V3000
- Added alpha results for EP1C20
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GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
Applicable Documents
[1] Title:
Doc.
Number:
Version:
Date:
Source:
ASER test for FPGAs Commercial Proposal
ACTEL 081903 v2
[2] Title:
JEDEC Standard - Measurement and Reporting of Alpha Particles and Terrestrial Cosmicray-Induced Soft Errors in Semiconductor Devices
JESD89
Doc.
Number:
Version:
Date:
Source:
Sep 03
iRoC
August 2001
JEDEC
[3] Title:
Doc.
Number:
Version:
Date:
Source:
Test Plan for the SER Test of Actel, Xilinx and Altera FPGA instances
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TP_005
[4] Title:
A. Taber and E. Normand, "Single Event Upset in Avionics", IEEE Trans. Nucl. Sci.,
NS-40, 120, 1993
0.05
24-Nov-03
iRoC
Doc.
Number:
Version:
Date:
Source:
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GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
Table of contents
1
EXECUTIVE SUMMARY ...........................................................................................................11
2
OBJECT .........................................................................................................................................12
2.1
2.2
TEST STRATEGY ..............................................................................................................................12
ERROR DEFINITION ........................................................................................................................14
3
14 MEV TESTS..............................................................................................................................15
3.1
3.2
3.3
TESTED CONDITIONS AND SCHEDULE ...........................................................................................15
DEVICES TESTED.............................................................................................................................16
STABILITY WITHOUT NEUTRON BEAM ..........................................................................................16
4
14 MEV RESULTS........................................................................................................................17
4.1
4.2
4.3
4.3.1
4.3.2
4.4
4.4.1
4.4.2
4.4.3
4.4.4
4.4.5
4.4.6
4.4.7
CROSS-SECTION AND FIT CALCULATION .....................................................................................17
OVERALL FIT RESULTS .................................................................................................................18
ACCURACY OF RESULTS .................................................................................................................19
ERROR COUNT STATISTICS ...............................................................................................................19
FLUENCE MEASUREMENT ACCURACY ..............................................................................................20
DETAILED ANALYSIS ......................................................................................................................21
VOLTAGE INFLUENCE ON FIT ..........................................................................................................21
ANALYSIS OF CRITICAL VS NON CRITICAL SEU...............................................................................23
ANALYSIS OF SINGLE EVENT LATCHUP ............................................................................................24
BITMAPS OF ERRORS ........................................................................................................................28
CHIP TO CHIP VARIATION .................................................................................................................33
CONSISTENCY CHECK.......................................................................................................................34
SPECIAL OBSERVATIONS ..................................................................................................................34
5
14 MEV CONCLUSIONS.............................................................................................................35
6
LANSCE TESTS............................................................................................................................36
6.1
6.2
6.3
TESTED CONDITIONS AND SCHEDULE ...........................................................................................36
DEVICES TESTED.............................................................................................................................37
STABILITY WITHOUT NEUTRON BEAM ..........................................................................................38
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GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
7
LANSCE RESULTS ......................................................................................................................39
7.1
7.2
7.3
7.3.1
7.3.2
7.4
7.4.1
7.4.2
7.4.3
7.4.4
7.4.5
7.4.6
7.4.7
CROSS-SECTION AND FIT CALCULATION .....................................................................................39
OVERALL FIT RESULTS .................................................................................................................41
ACCURACY OF RESULTS .................................................................................................................42
ERROR COUNT STATISTICS ...............................................................................................................42
FLUENCE MEASUREMENT ACCURACY ..............................................................................................43
DETAILED ANALYSIS ......................................................................................................................44
VOLTAGE INFLUENCE ON FIT ..........................................................................................................44
ANALYSIS OF CRITICAL VS NON CRITICAL SEU...............................................................................48
ANALYSIS OF SINGLE EVENT LATCHUP ............................................................................................50
BITMAPS OF ERRORS ........................................................................................................................55
CHIP TO CHIP VARIATION .................................................................................................................60
CONSISTENCY CHECK.......................................................................................................................62
SPECIAL OBSERVATIONS ..................................................................................................................65
8
LANSCE CONCLUSIONS ...........................................................................................................68
9
ALPHA TESTS ..............................................................................................................................69
9.1
9.2
9.3
9.4
CHARACTERISTICS OF THE ALPHA SOURCES................................................................................69
TESTED CONDITIONS AND SCHEDULE ...........................................................................................70
DEVICES TESTED.............................................................................................................................72
STABILITY WITHOUT ALPHA SOURCE ...........................................................................................72
10
ALPHA RESULTS ........................................................................................................................73
10.1
10.2
10.3
10.3.1
10.3.2
10.4
10.4.1
10.4.2
10.4.3
10.4.4
10.4.5
10.4.6
10.4.7
CROSS-SECTION AND FIT CALCULATION .....................................................................................73
OVERALL FIT RESULTS .................................................................................................................74
ACCURACY OF RESULTS .................................................................................................................75
ERROR COUNT STATISTICS ...............................................................................................................75
FLUENCE MEASUREMENT ACCURACY ..............................................................................................76
DETAILED ANALYSIS ......................................................................................................................77
VOLTAGE INFLUENCE ON FIT ..........................................................................................................77
ANALYSIS OF CRITICAL VS NON CRITICAL SEU...............................................................................79
ANALYSIS OF SINGLE EVENT LATCHUP ............................................................................................80
BITMAPS OF ERRORS ........................................................................................................................83
CHIP TO CHIP VARIATION .................................................................................................................89
CONSISTENCY CHECK.......................................................................................................................91
SPECIAL OBSERVATIONS ..................................................................................................................93
11
ALPHA CONCLUSIONS .............................................................................................................94
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GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
A
DETAILS OF CROSS-SECTIONS AND FIT ............................................................................95
A.1
A.2
A.3
14 MEV NEUTRONS ........................................................................................................................95
LANSCE .........................................................................................................................................97
ALPHA ...........................................................................................................................................102
B
95% CONFIDENCE INTERVALS ...........................................................................................106
C
GEOMETRY FACTOR CALCULATION FOR ALPHA TESTS .........................................107
D
TEST BOARD LAYOUT............................................................................................................110
D.1
D.2
D.3
D.4
D.5
AX1000..........................................................................................................................................110
APA1000 .......................................................................................................................................111
XC2V3000.....................................................................................................................................112
XC3S1000 .....................................................................................................................................113
EP1C20 .........................................................................................................................................114
List of Figures
FIGURE 1.
FIGURE 2.
FIGURE 3.
FIGURE 4.
FIGURE 5.
FIGURE 6.
FIGURE 7.
FIGURE 8.
FIGURE 9.
FIGURE 10.
FIGURE 11.
FIGURE 12.
FIGURE 13.
FIGURE 14.
FIGURE 15.
FIGURE 16.
FIGURE 17.
FIGURE 18.
FIGURE 19.
FIGURE 20.
FIGURE 21.
FIGURE 22.
TEST CIRCUIT BLOCK DIAGRAM .......................................................................................................13
COSMIC-RAY NEUTRON FLUX AT GROUND LEVEL......................................................................17
NEUTRON FLUX VS ALTITUDE...........................................................................................................19
SEFI FIT OF XC2V3000 VS VDD............................................................................................................22
SEU FIT OF XC2V3000 VS VDD ............................................................................................................23
SEFI VS TOTAL SEU XC2V3000............................................................................................................24
AX1000 VCCA AND VCCIB WAVEFORMS .........................................................................................25
AX1000 VCCDA WAVEFORM ...............................................................................................................25
APA1000 VDD WAVEFORM ..................................................................................................................26
APA1000 VDDP WAVEFORM ...........................................................................................................26
XC2V3000 VCCINT WAVEFORM.....................................................................................................27
XC2V3000 VCCO WAVEFORM.........................................................................................................27
BITMAP FOR RUN#2 OF XC2V3000.................................................................................................29
BITMAP FOR RUN#3 OF XC2V3000.................................................................................................30
BITMAP FOR RUN#4 OF XC2V3000.................................................................................................31
BITMAP FOR RUN#5 OF XC2V3000.................................................................................................32
CHIP TO CHIP FIT VARIATION........................................................................................................33
SEFI CONSISTENCY CHECK FOR XC2V3000 ................................................................................34
COSMIC-RAY NEUTRON FLUX AT GROUND LEVEL .................................................................39
SEFI FIT OF XC2V3000 VS VDD.......................................................................................................45
SEU FIT OF XC2V3000 VS VDD........................................................................................................46
SEFI FIT OF XC3S1000 VS VDD........................................................................................................47
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FIGURE 23.
FIGURE 24.
FIGURE 25.
FIGURE 26.
FIGURE 27.
FIGURE 28.
FIGURE 29.
FIGURE 30.
FIGURE 31.
FIGURE 32.
FIGURE 33.
FIGURE 34.
FIGURE 35.
FIGURE 36.
FIGURE 37.
FIGURE 38.
FIGURE 39.
FIGURE 40.
FIGURE 41.
FIGURE 42.
FIGURE 43.
FIGURE 44.
FIGURE 45.
FIGURE 46.
FIGURE 47.
FIGURE 48.
FIGURE 49.
FIGURE 50.
FIGURE 51.
FIGURE 52.
FIGURE 53.
FIGURE 54.
FIGURE 55.
FIGURE 56.
FIGURE 57.
FIGURE 58.
FIGURE 59.
FIGURE 60.
FIGURE 61.
FIGURE 62.
FIGURE 63.
FIGURE 64.
FIGURE 65.
FIGURE 66.
FIGURE 67.
FIGURE 68.
FIGURE 69.
FIGURE 70.
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
SEU FIT OF XC3S1000 VS VDD ........................................................................................................47
SEFI FIT OF EP1C20 VS VDD............................................................................................................48
SEFI VS TOTAL SEU XC2V3000 .......................................................................................................49
SEFI VS TOTAL SEU XC3S1000........................................................................................................50
AX1000 VCCA AND VCCIB WAVEFORMS ....................................................................................51
AX1000 VCCDA WAVEFORM ..........................................................................................................51
APA1000 VDD WAVEFORM .............................................................................................................52
APA1000 VDDP WAVEFORM ...........................................................................................................52
XC2V3000 VCCINT WAVEFORM.....................................................................................................53
XC2V3000 VCCO WAVEFORM.........................................................................................................53
BITMAP FOR RUN#2 OF XC2V3000.................................................................................................55
BITMAP FOR RUN#3 OF XC2V3000.................................................................................................56
BITMAP FOR RUN#4 OF XC2V3000.................................................................................................56
BITMAP FOR RUN#5 OF XC2V3000.................................................................................................57
BITMAP FOR RUN#2 OF XC3S1000 .................................................................................................58
BITMAP FOR RUN#3 OF XC3S1000 .................................................................................................58
BITMAP FOR RUN#4 OF XC3S1000 .................................................................................................59
BITMAP FOR RUN#5 OF XC3S1000 .................................................................................................59
CHIP TO CHIP FIT VARIATION FOR XC2V3000............................................................................60
CHIP TO CHIP FIT VARIATION FOR XC3S1000 ............................................................................61
CHIP TO CHIP FIT VARIATION FOR EP1C20.................................................................................62
SEFI CONSISTENCY CHECK FOR XC2V3000 ................................................................................63
SEFI CONSISTENCY CHECK FOR XC3S1000.................................................................................64
SEFI CONSISTENCY CHECK FOR EP1C20 .....................................................................................65
FLUX UNIFORMITY AT LANSCE (X-AXIS)...................................................................................66
FLUX UNIFORMITY AT LANSCE (Y-AXIS)...................................................................................66
FLUX UNIFORMITY MEASUREMENT AT LANSCE.....................................................................67
SEU FIT OF XC2V3000 VS VDD........................................................................................................77
SEFI FIT OF XC3S1000 VS VDD........................................................................................................78
SEU FIT OF XC3S1000 VS VDD ........................................................................................................78
SEFI FIT OF EP1C20 VS VDD............................................................................................................79
SEFI VS TOTAL SEU XC3S1000........................................................................................................80
AX1000 VCCA AND VCCIB WAVEFORMS ....................................................................................81
AX1000 VCCDA WAVEFORM ..........................................................................................................82
BITMAP FOR RUN#2 OF XC2V3000.................................................................................................84
BITMAP FOR RUN#3 OF XC2V3000.................................................................................................85
BITMAP FOR RUN#4 OF XC2V3000.................................................................................................85
BITMAP FOR RUN#5 OF XC2V3000.................................................................................................86
BITMAP FOR RUN#2 OF XC3S1000 .................................................................................................87
BITMAP FOR RUN#3 OF XC3S1000 .................................................................................................87
BITMAP FOR RUN#4 OF XC3S1000 .................................................................................................88
BITMAP FOR RUN#5 OF XC3S1000 .................................................................................................88
CHIP TO CHIP FIT VARIATION FOR XC2V3000............................................................................89
CHIP TO CHIP FIT VARIATION FOR XC3S1000 ............................................................................90
CHIP TO CHIP FIT VARIATION FOR EP1C20.................................................................................90
SEU CONSISTENCY CHECK FOR XC2V3000.................................................................................91
SEFI CONSISTENCY CHECK FOR XC3S1000.................................................................................92
SEFI CONSISTENCY CHECK FOR EP1C20 .....................................................................................92
List of Tables
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TABLE 1.
TABLE 2.
TABLE 3.
TABLE 4.
TABLE 5.
TABLE 6.
TABLE 7.
TABLE 8.
TABLE 9.
TABLE 10.
TABLE 11.
TABLE 12.
TABLE 13.
TABLE 14.
TABLE 15.
TABLE 16.
TABLE 17.
TABLE 18.
TABLE 19.
TABLE 20.
TABLE 21.
TABLE 22.
TABLE 23.
TABLE 24.
TABLE 25.
TABLE 26.
TABLE 27.
TABLE 28.
TABLE 29.
TABLE 30.
TABLE 31.
TABLE 32.
TABLE 33.
TABLE 34.
TABLE 35.
TABLE 36.
TABLE 37.
TABLE 38.
TABLE 39.
TABLE 40.
TABLE 41.
TABLE 42.
TABLE 43.
TABLE 44.
TABLE 45.
TABLE 46.
TABLE 47.
TABLE 48.
TABLE 49.
TABLE 50.
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
SUMMARY OF TEST CAMPAIGNS ......................................................................................................12
ERROR DEFINITIONS.............................................................................................................................14
CONDITIONS TESTED FOR AX1000 ....................................................................................................15
CONDITIONS TESTED FOR APA1000 ..................................................................................................15
CONDITIONS TESTED FOR XC2V3000................................................................................................15
LOT CODES OF THE AX1000 CHIPS TESTED.....................................................................................16
LOT CODES OF THE APA1000 CHIPS TESTED ..................................................................................16
LOT CODES OF THE XC2V3000 CHIPS TESTED ................................................................................16
OVERALL COSMIC-RAY FIT AT SEA LEVEL IN NYC .....................................................................18
OVERALL COSMIC-RAY FIT AT DIFFERENT ALTITUDES.............................................................18
95% CONFIDENCE LIMITS FOR SMALL NUMBER OF EVENTS.....................................................20
95% CONFIDENCE INTERVALS FOR ALL DEVICES ........................................................................20
DETAILED ANALYSIS FOR 14 MEV TESTS .......................................................................................21
XC2V3000 NUMBER OF SEFI FOR EACH CHIP..................................................................................28
OVERALL COSMIC-RAY FIT AT SEA LEVEL IN NYC .....................................................................35
OVERALL COSMIC-RAY FIT AT DIFFERENT ALTITUDES.............................................................35
CONDITIONS TESTED FOR AX1000 ....................................................................................................36
CONDITIONS TESTED FOR APA1000 ..................................................................................................36
CONDITIONS TESTED FOR XC2V3000................................................................................................37
CONDITIONS TESTED FOR XC3S1000 ................................................................................................37
CONDITIONS TESTED FOR EP1C20.....................................................................................................37
LOT CODES OF THE AX1000 CHIPS TESTED.....................................................................................37
LOT CODES OF THE APA1000 CHIPS TESTED ..................................................................................38
LOT CODES OF THE XC2V3000 CHIPS TESTED ................................................................................38
LOT CODES OF THE XC3S1000 CHIPS TESTED.................................................................................38
LOT CODES OF THE EP1C20 CHIPS TESTED .....................................................................................38
OVERALL COSMIC-RAY FIT AT SEA LEVEL IN NYC .....................................................................41
OVERALL COSMIC-RAY FIT AT DIFFERENT ALTITUDES.............................................................41
95% CONFIDENCE INTERVALS FOR ALL DEVICES ........................................................................43
DETAILED ANALYSIS FOR LANSCE TESTS......................................................................................44
XC2V3000 NUMBER OF SEFI FOR EACH CHIP..................................................................................54
XC3S1000 NUMBER OF SEFI FOR EACH CHIP ..................................................................................54
EP1C20 NUMBER OF SEFI FOR EACH CHIP.......................................................................................54
OVERALL COSMIC-RAY FIT AT SEA LEVEL IN NYC .....................................................................68
OVERALL COSMIC-RAY FIT AT DIFFERENT ALTITUDES.............................................................68
CHARACTERISTICS OF THE ALPHA SOURCES................................................................................69
ALPHA SOURCE UTILIZATION AND GEOMETRY FACTORS FOR EACH DEVICE ....................69
CONDITIONS TESTED FOR AX1000 ....................................................................................................70
CONDITIONS TESTED FOR APA1000 ..................................................................................................70
CONDITIONS TESTED FOR XC2V3000................................................................................................71
CONDITIONS TESTED FOR XC3S1000 ................................................................................................71
CONDITIONS TESTED FOR EP1C20.....................................................................................................71
LOT CODES OF THE AX1000 CHIPS TESTED.....................................................................................72
LOT CODES OF THE APA1000 CHIPS TESTED ..................................................................................72
LOT CODES OF THE XC2V3000 CHIPS TESTED ................................................................................72
LOT CODES OF THE XC3S1000 CHIPS TESTED.................................................................................72
LOT CODES OF THE EP1C20 CHIPS TESTED .....................................................................................72
OVERALL ALPHA PARTICLE FIT FOR 0.001 A/CM²/HOUR.............................................................74
95% CONFIDENCE INTERVALS FOR ALL DEVICES ........................................................................75
ALPHA SOURCE UTILIZATION AND ACCURACY FOR EACH DEVICE .......................................76
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TABLE 51.
TABLE 52.
TABLE 53.
TABLE 54.
TABLE 55.
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
DETAILED ANALYSIS FOR ALPHA TESTS........................................................................................77
XC2V3000 NUMBER OF SEU FOR EACH CHIP ..................................................................................82
XC3S1000 NUMBER OF SEFI FOR EACH CHIP ..................................................................................83
EP1C20 NUMBER OF SEFI FOR EACH CHIP.......................................................................................83
OVERALL ALPHA PARTICLE FIT FOR 0.001 A/CM²/HOUR.............................................................94
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GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
1 Executive summary
•
Cosmic-ray and alpha-particle soft error rates were measured for five different architectures of
FPGAs, from three different vendors, using three different programming technologies.
•
Test methodology was compliant with JESD-89.
•
SRAM-based FPGAs are liable to configuration SEU and SEFI when exposed to high-energy
neutrons and alpha particles.
•
Antifuse-based and Flash-based FPGAs did not exhibit any configuration SEU or SEFI when
exposed to high-energy neutrons and alpha particles.
•
Test results allowed the calculation of the ratio of SEFIs to SEUs.
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GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
2 Object
This test report provides the cosmic-ray SER of AX1000, APA1000, XC2V3000, XC3S1000 and EP1C20
devices. The cosmic-ray SER was measured at the LANSCE WNR facility at Los Alamos in February 2004.
The LANSCE results are compared with the preliminary SER of AX1000, APA1000 and XC2V3000
devices. The preliminary SER was measured using 14 MeV neutrons at the Interfaculty Reactor Institute
(IRI) at Delft in The Netherlands in December 2003.
This test report also provides the alpha particle SER of AX1000, APA1000, XC2V3000, XC3S1000 and
EP1C20 devices. The alpha particle SER was measured at iRoC premises using calibrated Am241 foil
sources in April and October 2004.
The tests were conducted following the Test Plan [3]. Table 1 summarizes the tests performed for each
device.
Mfg
Family
Device
Actel
Actel
Xilinx
Xilinx
Altera
Axcelerator
ProASICPLUS Flash
Virtex-II
Spartan-3
Cyclone
AX1000
APA1000
XC2V3000
XC3S1000
EP1C20
14 MeV
neutrons
√
√
√
Full spectrum
neutrons
√
√
√
√
√
Alpha
particles
√
√
√
√
√
Table 1. Summary of test campaigns
This test report includes the description of the different tests performed during the experiments, and
provides the detailed analysis and explanation of the FIT results.
2.1 Test strategy
This section recalls the test strategy. The test strategy is described in the Test Plan [3].
The test approach has special emphasis for the faults affecting the configuration memory.
The test strategy is based in the continuous monitoring of the outputs of a combinatorial circuit
implemented in the FPGA under test. As soon as a permanent mismatch of the output values is observed, the
test is stopped and the configuration memory read back and stored in a file. Additionally, the FPGA
configuration memory is periodically read back, even if the output values are correct. The test strategy
enables to identify the non critical and the critical SEU in the configuration memory, that is, those SEU in the
configuration memory that do not create an error in the output, and those that create an error in the output.
The target circuit implemented in the DUT is composed of an array of 16x16-bit binary multipliers. Inputs
of the multipliers are connected in parallel, and the outputs are connected to a multiplexer. The tester checks
the output of each multiplier sequentially by means of the multiplexer. The main feature of this circuit is that
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GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
it is purely combinatorial and uses a large part of the Look-Up Table (LUT) resources. The absence of FlipFlops ensures that fails occur only when the configuration memory is modified.
The test of the IO blocks (IOB) is accomplished by connecting a chain of IOB between the outputs of the
multiplexer and the tester. In this way all the available IOB of the FPGA can be tested.
Figure 1 presents the block diagram of the target circuit.
DUT FPGA design
INA(0:15)
Test vector
generator
INB(0:15)
INA
INB
16x16 bit
Multiplier
1
OUT
IN_1
32-bit
N-input
Multiplexer
OUT
INA
INB
16x16 bit
Multiplier
N
OUT
IN_N
OE
ADDR(0:6)
Figure 1. Test circuit block diagram
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OUT(0:31)
OE
ADDR(0:6)
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Radiation Results of the SER Test of Actel, Xilinx and
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2.2 Error definition
This section recalls the error definitions. Error definitions are included in the Test Plan [3].
Type of error
Description
SEU in the
configuration
memory
A bit flip in the configuration memory caused by a single particle strike, neutron or
alpha.
SEFI in the
target circuit
A permanent mismatch of the output of the target circuit. It is created by a SEU in the
configuration memory that alters the Look-Up Tables (LUT) or the routing of signals in
the target circuit.
Configuration
A failure in the controlling circuitry of the FPGA. Configuration and read back
circuitry
operations fail.
failure
Latchup
The activation of a parasitic structure in the silicon by a single neutron strike. The
latchup effects are an increase of the current consumption and failures in the target
circuit, the configuration memory or the controlling circuitry of the FPGA.
Hard error
A permanent failure in the FPGA that cannot be recovered after switching the beam off,
switching the power off/on, and reconfiguration.
Table 2. Error definitions
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3 14 MeV tests
3.1 Tested conditions and schedule
The following tables provide the sequence of conditions that were tested. Additionally to the test
conditions, stability and consistency checks have been performed at the beginning and the end of each test
sequence. A stability test (beam off) has been carried out before irradiation (cf. section 3.3). A consistency
test (repetition of the first condition) has been carried out at the end of the test sequence The order of the test
conditions follows the Test Plan [3].
The tables are extracted from the campaign logbook files in appendix A.1.
Run #
Device
1
2
3
4
5
AX1000
AX1000
AX1000
AX1000
AX1000
Energy
(MeV)
14
14
14
14
14
Start
Date
Time
Dec-16 14:29:13
Dec-16 14:47:15
Dec-17 8:00:00
Dec-17 9:10:42
Note 1
Note 1
Stop
Time
14:44:16
16:59:27
9:08:22
10:21:37
Note 1
Condition
Cycle VDD Temp
200ns 1.4 25°C
200ns 1.4 25°C
200ns 1.5 25°C
200ns 1.6 25°C
200ns 1.4 25°C
Table 3. Conditions tested for AX1000
Run #
Device
1
2
3
4
5
APA1000
APA1000
APA1000
APA1000
APA1000
Energy
(MeV)
14
14
14
14
14
Start
Date
Time
Dec-16 14:30:26
Dec-16 14:47:31
Dec-17 8:00:00
Dec-17 9:10:45
Note 1
Note 1
Stop
Time
14:44:14
16:59:35
9:08:20
10:21:34
Note 1
Condition
Cycle VDD Temp
200ns 2.3 25°C
200ns 2.3 25°C
200ns 2.5 25°C
200ns 2.7 25°C
200ns 2.3 25°C
Table 4. Conditions tested for APA1000
Run #
Device
1
2
3
4
5
XC2V3000
XC2V3000
XC2V3000
XC2V3000
XC2V3000
Energy
(MeV)
14
14
14
14
14
Start
Date
Time
Dec-17 13:31:49
Dec-17 13:36:31
Dec-17 14:31:12
Dec-17 15:08:40
Dec-17 15:52:07
Stop
Time
13:36:11
14:29:04
15:08:02
15:46:06
16:34:41
Condition
Cycle VDD Temp
200ns 1.425 25°C
200ns 1.425 25°C
200ns 1.500 25°C
200ns 1.575 25°C
200ns 1.425 25°C
Table 5. Conditions tested for XC2V3000
Note 1: The consistency check, run #5, was not done for the AX1000 and APA1000 because no errors
were observed for any of the conditions tested.
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3.2 Devices tested
The following tables show the lot codes of the chips that were actually tested:
Chip 1
DOAAJ1
0320
Chip 4
DOH5S21
0331
Chip 2
DOJC21
0345
Chip 5
DOJC21
0345
Chip 3
DOJC21
0345
Table 6. Lot codes of the AX1000 chips tested
Chip 1
MF7G7
0247
Chip 4
MF7G7
0247
Chip 2
MF7G7
0247
Chip 5
MF7G7
0247
Chip 3
MF7G7
0247
Chip 6
MF7G7
0247
Table 7. Lot codes of the APA1000 chips tested
Chip 1
AGT0337
F2149925A
Chip 4
AGT0337
F2149925A
Chip 2
AGT0337
F2149925A
Chip 5
AGT0337
F2149925A
Chip 3
AGT0337
F2149925A
Chip 6
AGT0337
F2149925A
Table 8. Lot codes of the XC2V3000 chips tested
3.3 Stability without neutron beam
An error rate measurement is performed with the beam off and with the components placed in the target.
The components are in the real environment with the real electromagnetic parasitic. This aims at verifying the
robustness of both the tester and the DUT boards against the real noisy environment.
This experiment was done during 10 minutes for each DUT board and no error occurred (cf run #1 in
Table 3 to Table 5).
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4 14 MeV results
4.1 Cross-section and FIT calculation
The cross-section defines the sensitivity of a device. The cross-section per chip, as a function of neutron
energy E, is defined as σ(E)=N/(F*C) where N is the total number of errors, F is the fluence and C is the
number of chips tested. In this document, the cross-section is given in cm²/chip.
The cross-section measured with 14 MeV neutrons is directly used to estimate the terrestrial failure rate.
We approximate the full energy spectrum cross-section by the cross-section at 14 MeV. The approximation
results in a lower estimate of the full spectrum cross-section because of the regular increase of cross-section
at high energy. The full spectrum cross-section could be up to 50% higher than the 14 MeV cross-section.
Neutron flux
1,000,000
Measured neutron flux at LANSCE
n/MeV/cm²/sec
100,000
10,000
1,000
Cosmic-ray neutron flux (multiplied by 1E6)
100
10
Integrated neutron flux above 1 MeV ~ 2.5E6 n/cm²/sec
1
1
10
100
1000
Neutron Energy (MeV)
Figure 2. Cosmic-ray neutron flux at ground level
According to the JESD89 specification [2], the FIT rate is calculated using the value of neutron flux for
the New-York City, fNYC =14 n/cm2/hour for neutrons with energy above 10 MeV. Thus, the FIT is given by
the following formula:
FIT=σ*fNYC*109 (errors/109 hour)
Where σ is the cross-section given in cm²/chip, and fNYC is the flux given in n/cm2/hour.
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The FIT is calculated using the neutron flux for the New-York City at sea level. The neutron flux depends
on the altitude and location. Appendix E of the JESD89 specification [2] shows how to adjust the error rates
calculated for the NYC for other locations.
4.2 Overall FIT results
Table 9 presents the overall cosmic-ray FIT for each device at sea level in NYC. The overall FIT is
calculated as the average of all chips and test conditions for the XC2V3000. Appendix A details the crosssection and FIT for each chip and test condition.
Device
AX1000
APA1000
XC2V3000
Overall
FIT (SEFI)
per Device
<0.017
<0.026
680
Overall
FIT (SEU)
per Device
<0.017
<0.026
4700
Table 9. Overall cosmic-ray FIT at sea level in NYC
In Table 9, it is important to understand that no errors were observed for the AX1000 and APA1000, for
anyof the test conditions. The given figure of FIT is an upper bound calculated considering one error for all
chips and test conditions. The AX1000 and APA1000, based in Antifuse and Flash processes respectively, are
considered insensitive to 14 MeV neutrons, therefore extending the test for longer periods would still produce
no errors, and result in lower bounds of FIT.
The neutron flux increases with altitude, and has a maximum at approximately 60,000 ft. The FIT at sea
level, 5,000 ft, 30,000 ft and 60,000 ft is provided in Table 10:
FIT (SEFI) at FIT (SEFI) at FIT (SEFI) at FIT (SEFI) at
sea level
5,000 ft
30,000 ft
60,000 ft
Device
AX1000
APA1000
XC2V3000
<0.017
<0.026
680
<0.058
<0.089
2,300
<2.5
<3.8
99,000
<8.1
<12
320,000
Table 10. Overall cosmic-ray FIT at different altitudes
The altitude effect at 5,000 ft and 30,000 ft is evaluated using the formula provided in appendix E of
JESD89 [2]:
Neutron flux (n/cm²/hour) = 15E3 * e -(A/148)
Where the altitude, a, in feet above sea level, is expressed as the areal density of the air column, A, in units
of g/cm². The altitude, a, can be converted to the areal density, A using the following equation:
A = 1033×exp[-.03813×(a/1000) -.00014×(a/1000)² +6.4E-7×(a/1000)³]
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The altitude effect at 60,000 ft is evaluated using Figure 3 from reference [4].
Figure 3. Neutron flux vs altitude
4.3 Accuracy of results
The accuracy of the cross-section results is assessed in this section. The accuracy of the cross-section is
the sum of the error count and fluence measurement accuracies.
4.3.1
Error count statistics
The error count is generally described by a Poisson distribution, cf appendix C.1 in [2]. If N errors occur,
the mean error count is approximated by N. The standard deviation is given by √N.
The error count can be bounded using the upper and lower limits in Table 11, extracted from appendix C.2
of [2]. In using this table, the first column is the actual number of events observed in the experiment. The
upper and lower limits define the 95% confidence interval for the true mean of the distribution. The upper and
lower limits for any number of events can be calculated using the formulas given in appendix B.
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THE CHIP PROTECTOR
Events
0
1
2
3
4
5
6
7
8
9
10
20
50
100
95% confidence limit
Lower limit Upper limit
0.0
3.7
0.0
5.6
0.2
7.2
0.6
8.8
1.1
10.2
1.6
11.7
2.2
13.1
2.8
14.4
3.5
15.8
4.1
17.1
4.8
18.4
12.2
30.9
37.1
65.9
81.4
121.6
Table 11. 95% confidence limits for small number of events
The accuracy of the error count is defined in this report using 95% confidence intervals. The 95%
confidence limits depend on the number of errors observed. The number of errors is detailed in appendix A
for each chip and test condition.
The following table summarizes the 95% confidence intervals for each device. For example, the overall
number of SEFI per chip and test condition is 18 for the XC2V3000. By using the formulas given in appendix
B, we find that the lower and upper limits are 10.7 and 28.4 respectively. The limits in Table 12 are
calculated as (Lower limit/Mean error count – 1)*100 = -41%, and (Upper limit/Mean error count – 1)*100 =
+58%.
Device
Error type
AX1000
APA1000
SEFI
SEFI
SEFI
XC2V3000
SEU
Mean
error count
0
0
18
105
420
122
730
Lower limit
Upper limit Comment
n/a
n/a
-41%
-18%
-9%
-17%
-7%
n/a
n/a
+58%
+21%
+10%
+19%
+8%
No errors observed
No errors observed
Errors per chip and test condition
Errors for all chips per test condition
Errors for all chips and test conditions
Errors per chip and test condition
Errors for all chips per test condition
Table 12. 95% confidence intervals for all devices
4.3.2
Fluence measurement accuracy
The accuracy of the fluence measurement is better than 10% for the IRI facility.
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4.4 Detailed analysis
Detailed analysis of the results is presented hereafter. The following table summarizes the analyses
presented for each device:
Analysis
Voltage influence on FIT
Analysis of critical vs non critical SEU
Analysis of single event latchup
Bitmaps of errors
Chip to chip variations
Special observations
AX1000
APA1000
√
√
√
√
XC2V3000
√
√
√
√
√
√
Table 13. Detailed analysis for 14 MeV tests
Many of the detailed analysis cannot be performed for the AX1000 and APA1000 because no errors were
observed for these devices.
4.4.1
Voltage influence on FIT
The SEFI and SEU FIT dependence vs VDD is presented in this section. The FIT is plotted separately for
each chip. The FIT average of all chips is also plotted, and the average FIT is used to fit an exponential curve.
Figure 4 and Figure 5 show a regular decrease of FIT at the higher VDD, as expected.
The FIT dispersion between chips is consistent with the accuracy assessments given in section 4.3.
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SEFI FIT for XC2V3000
1100
1000
Chip 1
FIT per Chip
900
Chip 2
Chip 3
800
y = 2.0E+03e
-7.2E-01x
Chip 4
700
Chip 5
Chip 6
600
Average
500
400
1.400
1.450
1.500
1.550
1.600
VDD
Figure 4. SEFI FIT of XC2V3000 vs VDD
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SEU FIT for XC2V3000
6000
5500
FIT per Chip
Chip 1
5000
y = 9.9E+03e
-4.9E-01x
Chip 2
Chip 3
Chip 4
4500
Chip 5
4000
Chip 6
Average
3500
3000
1.400
1.450
1.500
1.550
1.600
VDD
Figure 5. SEU FIT of XC2V3000 vs VDD
4.4.2
Analysis of critical vs non critical SEU
The test strategy enables to identify the critical and the non critical SEU in the configuration memory, that
is, those SEU in the configuration memory that create an SEFI, and those that do not create an SEFI.
Figure 6 presents the ratio SEFI / Total SEU for each chip and test condition. The overall ratio is 15%
independent of the test condition.
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THE CHIP PROTECTOR
Ratio SEFI / Total SEU for XC2V3000
30%
SEFI / Total SEU (%)
25%
Chip 1
20%
Chip 2
Chip 3
15%
Chip 4
Chip 5
Chip 6
10%
Average
5%
0%
2
3
4
5
Test condition #
Figure 6. SEFI vs Total SEU XC2V3000
4.4.3
Analysis of single event latchup
Single event latchup (SEL) consists in the neutron induced activation of parasitic thyristor structures in the
CMOS process. In case a process is sensitive to latchup, the latchup rate is higher at the higher voltage,
temperature and particle energy.
Latchups result in increased current consumption, partial or total configuration memory wipe out, or
complete loss of operation. Because the current is limited for protection, latchups lead to voltage shutdown to
the DUT. The way the tester detects latchups is by monitoring the DUT supply voltages. In case a latchup is
detected, the tester logs the event and switches the power off/on for recovering.
A particular case of latchup is the microlatchup. The microlatchup consists in the activation of a parasitic
thyristor structure with weak on-resistance and a low increase of current consumption. In case of
microlatchup, the voltage and current can find a stability point that cannot be detected by the tester. In this
case, one or more chips are partially or totally wiped out, or experience complete loss of operation during the
duration of a test condition.
No latchups were detected for any of the devices and conditions tested. In the following subsections, the
voltage and current waveforms, acquired during the experiments, will be presented for each device and test
condition. The sensitivity to microlatchup will be analyzed by inspection of the voltage and current
waveforms and correlation with the observed number of errors in each chip.
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4.4.3.1
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AX1000
We observe regular voltage and current waveforms in Figure 7 and Figure 8. No errors were observed for
any of the chips and conditions tested. Therefore, there is no indication of latchup.
Power supply waveforms
VCCA, VCCIB (V)
VCCA, VCCIB
1.6
0.15
ICCA+ICCIB
1.5
0.10
1.4
0.05
1.3
0.00
ICCA+ICCIB (A)
0.20
1.7
Run# (1 sample per second)
Figure 7. AX1000 VCCA and VCCIB waveforms
VCCDA (V)
3.40
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
3.35
3.30
VCCDA
3.25
ICCDA
3.20
1
3
2
4
Run # (1 sample per second)
Figure 8. AX1000 VCCDA waveform
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ICCDA (A)
Power supply waveforms
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4.4.3.2
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
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APA1000
We observe regular voltage and current waveforms in Figure 9 and Figure 10. No errors were observed for
any of the chips and conditions tested. Therefore, there is no indication of latchup.
Power supply waveforms
VDD (V)
2.7
VDD
0.25
2.6
IDD
0.20
2.5
0.15
2.4
0.10
2.3
0.05
2.2
0.00
IDD (A)
0.30
2.8
Run# (1 sample per second)
Figure 9. APA1000 VDD waveform
VDDP (V)
2.60
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
2.55
2.50
VDDP
2.45
IDDP
2.40
1
3
2
4
Run # (1 sample per second)
Figure 10.
APA1000 VDDP waveform
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IDDP (A)
Power supply waveforms
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4.4.3.3
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
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XC2V3000
We observe regular voltage and current waveforms in Figure 11 and Figure 12. The number of errors,
presented in the following table is regular across the six chips tested. Therefore, there is no indication of
latchup.
Power supply waveforms
0.5
0.4
1.55
0.3
1.50
0.2
VCCINT
1.45
ICCINT (A)
VCCINT (V)
1.60
0.1
ICCINT
0.0
1.40
Run# (1 sample per second)
Figure 11.
XC2V3000 VCCINT waveform
3.10
3.5
3.0
3.05
2.5
2.0
1.5
1.0
3.00
VCCO
2.95
ICCO
0.5
0.0
2.90
1 2
3
4
5
Run # (1 sample per second)
Figure 12.
XC2V3000 VCCO waveform
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ICCO (A)
VCCO (V)
Power supply waveforms
THE CHIP PROTECTOR
Run #
1
2
3
4
5
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
Condition
Number of SEFI
VDD
Chip 1 Chip 2 Chip 3 Chip 4 Chip 5 Chip 6
1.425
0
0
0
0
0
0
1.425
22
17
25
19
11
11
1.500
21
12
18
21
17
18
1.575
14
16
15
25
13
18
1.425
14
18
23
20
16
16
Table 14. XC2V3000 number of SEFI for each chip
Note: run #1 was a test run with the beam switched off, to test that the tester electronics was working
correctly (cf section 3.3).
4.4.4
Bitmaps of errors
Bitmaps allow to check the expected random distribution of errors in the configuration memory arrays.
Each point in the bitmap represents a failing address. The bitmaps are logical bitmaps, not physical
bitmaps, because the layout of the configuration memory is not available. In the logical bitmaps, the address
LSB are mapped in the x-axis and the address MSB are mapped in the y-axis.
The address refers to the location where the verification bitstream is stored in the tester memory. Valid
addresses for the XC2V3000 are in the range 0x400069 to 0x5D4329. Each address holds 5 bits. Therefore,
the verification bitstream length is 9,588,165 bits.
The bitmaps show the expected random distribution of errors.
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XC2V3000 bitmap
5120
4096
Chip 1
3072
Chip 2
Y
Chip 3
Chip 4
2048
Chip 5
Chip 6
1024
0
0
1024
2048
3072
4096
5120
X
Figure 13.
Bitmap for run#2 of XC2V3000
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XC2V3000 bitmap
5120
4096
Chip 1
3072
Chip 2
Y
Chip 3
Chip 4
2048
Chip 5
Chip 6
1024
0
0
1024
2048
3072
4096
5120
X
Figure 14.
Bitmap for run#3 of XC2V3000
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XC2V3000 bitmap
5120
4096
Chip 1
3072
Chip 2
Y
Chip 3
Chip 4
2048
Chip 5
Chip 6
1024
0
0
1024
2048
3072
4096
5120
X
Figure 15.
Bitmap for run#4 of XC2V3000
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XC2V3000 bitmap
5120
4096
Chip 1
3072
Chip 2
Y
Chip 3
Chip 4
2048
Chip 5
Chip 6
1024
0
0
1024
2048
3072
4096
5120
X
Figure 16.
Bitmap for run#5 of XC2V3000
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THE CHIP PROTECTOR
4.4.5
Chip to chip variation
This section presents the chip to chip FIT variations observed. The objective of this section is to check the
neutron flux uniformity.
The FIT variations shown in Figure 17 are defined as the variation relative to the average of the 6 chips
tested.
⎛
⎞
FIT Chip(i)
FIT variation for chip(i) (%) = ⎜⎜
− 1⎟⎟ × 100
⎝ Average FIT Chips(1 to 6) ⎠
The FIT variations observed are within the expected statistical uncertainty: –17% to +19%, see Table 12.
Therefore, we verify that the neutron flux is uniform.
SEU FIT variation for each chip XC2V3000
20%
FIT variation (%) .
15%
10%
5%
Chip 1
0%
Chip 2
Chip 3
-5%
Chip 4
Chip 5
-10%
Chip 6
-15%
-20%
2
3
4
5
Test condition #
Figure 17.
Chip to chip FIT variation
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4.4.6
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Consistency check
A consistency test (repetition of the first condition) has been carried out at the end of the test sequence.
The consistency test verifies the stability of the beam, DUT and tester.
Figure 18 verifies that the results of runs #2 and #5 are consistent, taking into account the statistical
uncertainty shown by the error bars.
SEFI Consistency Check for XC2V3000
1100
1000
Chip 1
FIT per Chip
900
Chip 2
Chip 3
800
Chip 4
700
Chip 5
Chip 6
600
Average
500
400
2
5
Test condition #
Figure 18.
4.4.7
SEFI consistency check for XC2V3000
Special observations
A verify operation using the Flash Pro programmer was performed for the APA1000 chips, at the end of
the radiation tests performed. The verify operation was successful for all the APA1000 chips.
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5 14 MeV conclusions
The preliminary cosmic-ray SER of AX1000, APA1000 and XC2V3000 devices was measured using 14
MeV neutrons at the Interfaculty Reactor Institute (IRI) at Delft in The Netherlands in December 2003.
Table 15 presents the overall cosmic-ray FIT for each device at sea level in NYC. The overall FIT is
calculated as the average of all chips and test conditions for the XC2V3000.
Device
AX1000
APA1000
XC2V3000
Overall
FIT (SEFI)
per Device
<0.017
<0.026
680
Overall
FIT (SEU)
per Device
<0.017
<0.026
4700
Table 15. Overall cosmic-ray FIT at sea level in NYC
In Table 15, it is important to understand that no errors were observed for the AX1000 and APA1000, for
any of the test conditions. The given figure of FIT is an upper bound calculated considering one error for all
chips and test conditions. The AX1000 and APA1000, based in Antifuse and Flash processes respectively, are
considered insensitive to 14 MeV neutrons, therefore extending the test for longer periods would still produce
no errors, and result in lower bounds of FIT.
The neutron flux increases with altitude, and has a maximum at approximately 60,000 ft. The FIT at sea
level, 5,000 ft, 30,000 ft and 60,000 ft is provided in Table 16.
FIT (SEFI) at FIT (SEFI) at FIT (SEFI) at FIT (SEFI) at
sea level
5,000 ft
30,000 ft
60,000 ft
Device
AX1000
APA1000
XC2V3000
<0.017
<0.026
680
<0.058
<0.089
2,300
<2.5
<3.8
99,000
<8.1
<12
320,000
Table 16. Overall cosmic-ray FIT at different altitudes
No occurrences of latchup have been observed for any of the devices.
No errors in the configuration circuitry of the XC2V3000 were observed.
No hard errors were observed for any of the devices.
It is important to understand that we approximate the full energy spectrum cross-section by the crosssection at 14 MeV. The approximation results in a lower estimate of the full spectrum cross-section, that
could be up to 50% higher than the 14 MeV cross-section. Additionally, devices that are not sensitive to
latchup for 14 MeV neutrons, can be sensitive for neutrons of higher energy. Therefore, full spectrum tests at
LANSCE will be performed to consolidate these preliminary results.
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6 LANSCE tests
6.1 Tested conditions and schedule
The following tables provide the sequence of conditions that were tested. Additionally to the test
conditions, stability and consistency checks have been performed at the beginning and the end of each test
sequence. A stability test (beam off) has been carried out before irradiation (cf. section 6.3). A consistency
test (repetition of the first condition) has been carried out at the end of the test sequence The order of the test
conditions follows the Test Plan [3].
The tables are extracted from the campaign logbook files in appendix A.2.
Run #
Device
1
2
3
4
5
AX1000
AX1000
AX1000
AX1000
AX1000
Energy
(MeV)
LANSCE
LANSCE
LANSCE
LANSCE
LANSCE
Start
Date
17-Feb
17-Feb
17-Feb
18-Feb
Note 1
Stop
Time
14:27:15
15:46:19
22:41:50
4:28:29
Note 1
Date
17-Feb
17-Feb
18-Feb
18-Feb
Note 1
Time
14:38:02
22:40:35
4:27:11
9:46:52
Note 1
Condition
Cycle VDD Temp
200ns 1.4 25°C
200ns 1.4 25°C
200ns 1.5 25°C
200ns 1.6 25°C
200ns 1.4 25°C
Table 17. Conditions tested for AX1000
Note 1: The consistency check, run #5, was not done for the AX1000 because no errors were observed for
any of the conditions tested.
Run #
Device
1
2
3
4
5
APA1000
APA1000
APA1000
APA1000
APA1000
Energy
(MeV)
LANSCE
LANSCE
LANSCE
LANSCE
LANSCE
Start
Date
18-Feb
18-Feb
18-Feb
18-Feb
19-Feb
Stop
Time
10:36:44
10:47:46
15:22:12
21:09:08
5:56:33
Date
18-Feb
18-Feb
18-Feb
19-Feb
19-Feb
Time
10:46:44
15:21:14
21:07:56
5:55:00
21:26:26
Condition
Cycle VDD Temp
200ns 2.3 25°C
200ns 2.3 25°C
200ns 2.5 25°C
200ns 2.7 25°C
200ns 2.3 25°C
Table 18. Conditions tested for APA1000
No errors were observed for any of the conditions tested for the APA1000. The consistency check, run #5,
was done because beam time was available, to increase the fluence and thus the accuracy of the FIT bound.
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Run #
Device
1
2
3
4
5
XC2V3000
XC2V3000
XC2V3000
XC2V3000
XC2V3000
Energy
(MeV)
LANSCE
LANSCE
LANSCE
LANSCE
LANSCE
Start
Date
17-Feb
17-Feb
17-Feb
17-Feb
17-Feb
Stop
Time
14:28:11
15:46:53
15:59:04
16:10:38
16:23:38
Date
17-Feb
17-Feb
17-Feb
17-Feb
17-Feb
Time
14:38:56
15:57:28
16:09:44
16:22:29
16:35:45
Condition
Cycle VDD Temp
200ns 1.425 25°C
200ns 1.425 25°C
200ns 1.500 25°C
200ns 1.575 25°C
200ns 1.425 25°C
Table 19. Conditions tested for XC2V3000
Run #
Device
1
2
3
4
5
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
Energy
(MeV)
LANSCE
LANSCE
LANSCE
LANSCE
LANSCE
Start
Date
17-Feb
17-Feb
17-Feb
17-Feb
17-Feb
Stop
Time
17:16:20
17:25:56
17:52:36
19:41:23
20:08:11
Date
17-Feb
17-Feb
17-Feb
17-Feb
17-Feb
Time
17:25:22
17:51:15
19:40:45
20:07:31
20:23:55
Condition
Cycle VDD Temp
200ns 1.140 25°C
200ns 1.140 25°C
200ns 1.200 25°C
200ns 1.260 25°C
200ns 1.140 25°C
Table 20. Conditions tested for XC3S1000
Run #
Device
1
2
3
4
5
EP1C20
EP1C20
EP1C20
EP1C20
EP1C20
Energy
(MeV)
LANSCE
LANSCE
LANSCE
LANSCE
LANSCE
Start
Date
17-Feb
17-Feb
17-Feb
17-Feb
17-Feb
Stop
Time
20:58:26
21:09:30
21:49:43
22:04:36
22:22:38
Date
17-Feb
17-Feb
17-Feb
17-Feb
17-Feb
Time
21:08:40
21:27:50
22:03:20
22:21:21
22:39:26
Condition
Cycle VDD Temp
200ns 1.425 25°C
200ns 1.425 25°C
200ns 1.500 25°C
200ns 1.575 25°C
200ns 1.425 25°C
Table 21. Conditions tested for EP1C20
6.2 Devices tested
The following tables show the lot codes of the chips that were actually tested:
Chip 1
DOAAJ1
0320
Chip 4
DOH5S21
0331
Chip 2
DOJC21
0345
Chip 5
DOJC21
0345
Chip 3
DOJC21
0345
Table 22. Lot codes of the AX1000 chips tested
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Chip 1
MF7G7
0247
Chip 4
MF7G7
0247
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Radiation Results of the SER Test of Actel, Xilinx and
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Chip 2
MF7G7
0247
Chip 5
MF7G7
0247
Chip 3
MF7G7
0247
Table 23. Lot codes of the APA1000 chips tested
Chip 1
AGT0337
F2149925A
Chip 4
AGT0337
F2149925A
Chip 2
AGT0337
F2149925A
Chip 5
AGT0337
F2149925A
Chip 3
AGT0337
F2149925A
Chip 6
AGT0337
F2149925A
Table 24. Lot codes of the XC2V3000 chips tested
Chip 1
FT256AFQ0341
D13989A
Chip 4
FT256AFQ0341
D13989A
Chip 2
FT256AFQ0341
D13989A
Chip 5
FT256AFQ0341
D13989A
Chip 3
FT256AFQ0341
D13990A
Chip 6
FT256AFQ0341
D13989A
Table 25. Lot codes of the XC3S1000 chips tested
Chip 1
EP1C20F324C8
AAD900313A
Chip 4
EP1C20F324C8
AAD900313A
Chip 2
EP1C20F324C8
AAD900313A
Chip 5
EP1C20F324C8
AAD900313A
Chip 3
EP1C20F324C8
AAD900313A
Chip 6
EP1C20F324C8
AAD900313A
Table 26. Lot codes of the EP1C20 chips tested
6.3 Stability without neutron beam
An error rate measurement is performed with the beam off and with the components placed in the target.
The components are in the real environment with the real electromagnetic parasitic. This aims at verifying the
robustness of both the tester and the DUT boards against the real noisy environment.
This experiment was done during 10 minutes for each DUT board and no error occurred (cf run #1 in
Table 17 to Table 21).
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THE CHIP PROTECTOR
7 LANSCE results
7.1 Cross-section and FIT calculation
The cross-section defines the sensitivity of a device. The cross-section per chip, as a function of neutron
energy E, is defined as σ(E)=N/(F*C) where N is the total number of errors, F is the fluence and C is the
number of chips tested. In this document, the cross-section is given in cm²/chip.
Since the WNR neutron beam has a neutron energy spectrum very similar to the terrestrial neutron energy
spectrum, the cross-section per bit obtained at WNR can be used directly to estimate the terrestrial failure
rate.
Neutron flux
1,000,000
Measured neutron flux at LANSCE
n/MeV/cm²/sec
100,000
10,000
1,000
Cosmic-ray neutron flux (multiplied by 1E6)
100
10
Integrated neutron flux above 1 MeV ~ 2.5E6 n/cm²/sec
1
1
10
100
Neutron Energy (MeV)
Figure 19.
Cosmic-ray neutron flux at ground level
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Radiation Results of the SER Test of Actel, Xilinx and
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According to the JESD89 specification [2], the FIT rate is calculated using the value of neutron flux for
New-York City, fNYC =14 n/cm²/hour for neutrons with energy above 10 MeV. The FIT is calculated in this
report for one device. Thus, the FIT is given by the following formula:
FIT=σ*fNYC*109 (errors/109 hour)
Where σ is the cross-section given in cm²/chip, and fNYC is the flux given in n/cm2/hour.
The FIT is calculated using the neutron flux for the New-York City at sea level. The neutron flux depends
on the altitude and location. Appendix E of the JESD89 specification [2] shows how to adjust the error rates
calculated for the NYC for other locations.
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7.2 Overall FIT results
Table 27 presents the overall cosmic-ray FIT for each device at sea level in NYC. The overall FIT is
calculated as the average of all chips and test conditions for the XC2V3000, XC3S1000 and EP1C20 devices.
Appendix A details the cross-section and FIT for each chip and test condition.
Device
AX1000
APA1000
XC2V3000
XC3S1000
EP1C20
Overall
FIT (SEFI)
per Device
<0.082
<0.038
1,150
320
460
Overall
FIT (SEU)
per Device
<0.082
<0.038
8,680
1,240
n/a
Table 27. Overall cosmic-ray FIT at sea level in NYC
In Table 27, it is important to understand that no errors were observed for the AX1000 and APA1000, for
any of the test conditions. The given figure of FIT is an upper bound calculated considering one error for all
chips and test conditions. The AX1000 and APA1000, based in Antifuse and Flash processes respectively, are
considered insensitive to terrestrial spectrum of neutrons, therefore extending the test for longer periods
would still produce no errors, and result in lower bounds of FIT.
The readback of the configuration memory is not available for the EP1C20. Therefore, the SEU FIT could
not be measured for the EP1C20.
The neutron flux increases with altitude, and has a maximum at approximately 60,000 ft. The FIT at sea
level, 5,000 ft, 30,000 ft and 60,000 ft is provided in Table 28.
FIT (SEFI) at FIT (SEFI) at FIT (SEFI) at FIT (SEFI) at
sea level
5,000 ft
30,000 ft
60,000 ft
Device
AX1000
APA1000
XC2V3000
XC3S1000
EP1C20
<0.082
<0.038
1,150
320
460
<0.28
<0.13
3,900
1,100
1,600
<12
<5.6
170,000
47,000
67,000
<39
<18
540,000
150,000
220,000
Table 28. Overall cosmic-ray FIT at different altitudes
The altitude effect at 5,000 ft and 30,000 ft is evaluated using the formula provided in appendix E of
JESD89 [2]:
Neutron flux (n/cm²/hour) = 15E3 * e -(A/148)
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Where the altitude, a, in feet above sea level, is expressed as the areal density of the air column, A, in units
of g/cm². The altitude, a, can be converted to the areal density, A using the following equation:
A = 1033×exp[-.03813×(a/1000) -.00014×(a/1000)² +6.4E-7×(a/1000)³]
The altitude effect at 60,000 ft is evaluated using Figure 3 from reference [4].
7.3 Accuracy of results
The accuracy of the cross-section results is assessed in this section. The accuracy of the cross-section is
the sum of the error count and fluence measurement accuracies.
7.3.1
Error count statistics
The error count is generally described by a Poisson distribution, cf appendix C.1 in [2]. If N errors occur,
the mean error count is approximated by N. The standard deviation is given by √N.
The error count can be bounded using the upper and lower limits in Table 11, extracted from appendix C.2
of [2]. In using this table, the first column is the actual number of events observed in the experiment. The
upper and lower limits define the 95% confidence interval for the true mean of the distribution. The upper and
lower limits for any number of events can be calculated using the formulas given in appendix B.
The accuracy of the error count is defined in this report using 95% confidence intervals. The 95%
confidence limits depend on the number of errors observed. The number of errors is detailed in appendix A
for each chip and test condition.
The following table summarizes the 95% confidence intervals for each device. For example, the overall
number of SEFI per chip and test condition is 15 for the XC2V3000. By using the formulas given in appendix
B, we find that the lower and upper limits are 8.4 and 24.7 respectively. The limits in Table 29 are calculated
as (Lower limit/Mean error count – 1)*100 = -44%, and (Upper limit/Mean error count – 1)*100 = +65%.
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Device
AX1000
APA1000
Error type
SEFI
SEFI
SEFI
XC2V3000
SEU
SEFI
XC3S1000
SEU
EP1C20
SEFI
Errors
0
0
15
87
349
144
865
17
101
405
81
484
19
113
453
Lower limit
n/a
n/a
-44%
-20%
-10%
-16%
-7%
-42%
-19%
-10%
-21%
-9%
-40%
-18%
-9%
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
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Upper limit
n/a
n/a
65%
23%
11%
18%
7%
60%
22%
10%
24%
9%
56%
20%
10%
Comment
No errors observed
No errors observed
Errors per chip and test condition
Errors for all chips per test condition
Errors for all chips and test conditions
Errors per chip and test condition
Errors for all chips per test condition
Errors per chip and test condition
Errors for all chips per test condition
Errors for all chips and test conditions
Errors per chip and test condition
Errors for all chips per test condition
Errors per chip and test condition
Errors for all chips per test condition
Errors for all chips and test conditions
Table 29. 95% confidence intervals for all devices
7.3.2
Fluence measurement accuracy
The accuracy of the fluence measurement is better than 5% for the LANSCE facility.
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7.4 Detailed analysis
Detailed analysis of the results is presented hereafter. The following table summarizes the analyses
presented for each device:
Analysis
Voltage influence on FIT
Analysis of critical vs non critical SEU
Analysis of single event latchup
Bitmaps of errors
Chip to chip variations
Special observations
AX1000
APA1000
√
√
√
√
XC2V3000
√
√
√
√
√
√
XC3S1000
√
√
√
√
√
√
EP1C20
√
√
√
√
Table 30. Detailed analysis for LANSCE tests
Many of the detailed analysis cannot be performed for the AX1000 and APA1000 because no errors were
observed for these devices.
7.4.1
Voltage influence on FIT
The SEFI and SEU FIT dependence vs VDD is presented in this section. The FIT is plotted separately for
each chip. The FIT average of all chips is also plotted, and the average FIT is used to fit an exponential curve.
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7.4.1.1
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XC2V3000
Figure 20 does not show a regular decrease of SEFI FIT at the higher VDD, as measured with 14 MeV
neutrons. This is partially explained because of the statistical uncertainty of SEFI events, ±20% as shown in
Table 29. Figure 21 shows a regular decrease of SEU FIT at the higher VDD, as expected.
The FIT dispersion between chips is consistent with the accuracy assessments given in section 7.3.
SEFI FIT for XC2V3000
2000
1800
1600
y = 4.5E+02e
FIT per Chip
1400
Chip 1
6.2E-01x
Chip 2
1200
Chip 3
1000
Chip 4
800
Chip 5
600
Chip 6
Average
400
200
0
1.40
1.45
1.50
1.55
1.60
VDD
Figure 20.
SEFI FIT of XC2V3000 vs VDD
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SEU FIT for XC2V3000
12000
10000
FIT per Chip
Chip 1
Chip 2
8000
Chip 3
6000
y = 1.8E+04e
-4.8E-01x
Chip 4
Chip 5
4000
Chip 6
Average
2000
0
1.40
1.45
1.50
1.55
1.60
VDD
Figure 21.
7.4.1.2
SEU FIT of XC2V3000 vs VDD
XC3S1000
Figure 22 does not show a regular decrease of SEFI FIT at the higher VDD, as expected. This is partially
explained because of the statistical uncertainty of SEFI events, ±20% as shown in Table 29. Figure 23 shows
a regular decrease of SEU FIT at the higher VDD, as expected.
The FIT dispersion between chips is consistent with the accuracy assessments given in section 7.3.
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SEFI FIT for XC3S1000
600
500
FIT per Chip
Chip 1
y = 3.1E+02e
400
2.3E-02x
Chip 2
Chip 3
Chip 4
300
Chip 5
200
Chip 6
Average
100
0
1.10
1.15
1.20
1.25
1.30
VDD
Figure 22.
SEFI FIT of XC3S1000 vs VDD
SEU FIT for XC3S1000
1800
FIT per Chip
1600
1400
Chip 1
1200
Chip 2
Chip 3
1000
800
y = 8.2E+03e
Chip 4
-1.6E+00x
Chip 5
600
Chip 6
400
Average
200
0
1.10
1.15
1.20
1.25
1.30
VDD
Figure 23.
SEU FIT of XC3S1000 vs VDD
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THE CHIP PROTECTOR
7.4.1.3
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
EP1C20
Figure 24 does not show a regular decrease of SEFI FIT at the higher VDD, as expected. This is partially
explained because of the statistical uncertainty of SEFI events, ±20% as shown in Table 29.
The FIT dispersion between chips is consistent with the accuracy assessments given in section 7.3.
SEFI FIT for EP1C20
800
700
FIT per Chip
600
y = 2.7E+02e
Chip 1
3.3E-01x
Chip 2
500
Chip 3
400
Chip 4
Chip 5
300
Chip 6
200
Average
100
0
1.40
1.45
1.50
1.55
1.60
VDD
Figure 24.
7.4.2
SEFI FIT of EP1C20 vs VDD
Analysis of critical vs non critical SEU
The test strategy enables to identify the critical and the non critical SEU in the configuration memory, that
is, those SEU in the configuration memory that create an SEFI, and those that do not create an SEFI.
7.4.2.1
XC2V3000
Figure 25 presents the ratio SEFI / Total SEU for each chip and test condition. The overall ratio is 10%
independent of the test condition.
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GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
THE CHIP PROTECTOR
Ratio SEFI / Total SEU for XC2V3000
20%
SEFI / Total SEU (%
15%
Chip 1
Chip 2
Chip 3
Chip 4
10%
Chip 5
Chip 6
Average
5%
0%
2
3
4
5
Test condition #
Figure 25.
7.4.2.2
SEFI vs Total SEU XC2V3000
XC3S1000
Figure 26 presents the ratio SEFI / Total SEU for each chip and test condition. The overall ratio is 22%
independent of the test condition.
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GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
THE CHIP PROTECTOR
Ratio SEFI / Total SEU for XC3S1000
40%
35%
SEFI / Total SEU (%
30%
Chip 1
Chip 2
25%
Chip 3
Chip 4
20%
Chip 5
15%
Chip 6
Average
10%
5%
0%
2
3
4
5
Test condition #
Figure 26.
7.4.3
SEFI vs Total SEU XC3S1000
Analysis of single event latchup
Single event latchup (SEL) consists in the neutron induced activation of parasitic thyristor structures in the
CMOS process. In case a process is sensitive to latchup, the latchup rate is higher at the higher voltage,
temperature and particle energy.
Latchups result in increased current consumption, partial or total configuration memory wipe out, or
complete loss of operation. Because the current is limited for protection, latchups lead to voltage shutdown to
the DUT. The way the tester detects latchups is by monitoring the DUT supply voltages. In case a latchup is
detected, the tester logs the event and switches the power off/on for recovering.
A particular case of latchup is the microlatchup. The microlatchup consists in the activation of a parasitic
thyristor structure with weak on-resistance and a low increase of current consumption. In case of
microlatchup, the voltage and current can find a stability point that cannot be detected by the tester. In this
case, one or more chips are partially or totally wiped out, or experience complete loss of operation during the
duration of a test condition.
No latchups were detected for any of the devices and conditions tested. In the following subsections, the
voltage and current waveforms, acquired during the experiments, will be presented for each device and test
condition. The sensitivity to microlatchup will be analyzed by inspection of the voltage and current
waveforms and correlation with the observed number of errors in each chip.
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THE CHIP PROTECTOR
7.4.3.1
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
AX1000
We observe regular voltage and current waveforms in Figure 27 and Figure 28. No errors were observed
for any of the chips and conditions tested. Therefore, there is no indication of latchup.
Power supply waveforms
0.20
VCCA, VCCIB
1.6
0.15
ICCA+ICCIB
1.5
0.10
1.4
0.05
1.3
0.00
ICCA+ICCIB (A)
VCCA, VCCIB (V)
1.7
Run # (1 sample per second)
Figure 27.
AX1000 VCCA and VCCIB waveforms
VCCDA (V)
3.40
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
3.35
3.30
VCCDA
3.25
ICCDA
3.20
12
4
3
Run # (1 sample per second)
Figure 28.
AX1000 VCCDA waveform
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ICCDA (A)
Power supply waveforms
THE CHIP PROTECTOR
7.4.3.2
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
APA1000
We observe regular voltage and current waveforms in Figure 29 and Figure 30. No errors were observed
for any of the chips and conditions tested. Therefore, there is no indication of latchup.
Power supply waveforms
0.30
2.7
VDD
2.6
IDD
0.25
0.20
2.5
2.4
IDD (A)
VDD (V)
2.8
0.15
2.3
2.2
0.10
Run # (1 sample per second)
Figure 29.
APA1000 VDD waveform
VDDP (V)
2.60
2.50
VDDP
IDDP
2.40
12
3
4
5
Run # (1 sample per second)
Figure 30.
APA1000 VDDP waveform
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0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
IDDP (A)
Power supply waveforms
THE CHIP PROTECTOR
7.4.3.3
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
XC2V3000
We observe regular voltage and current waveforms in Figure 31 and Figure 32. The number of errors,
presented in the following table is regular across the six chips tested. Therefore, there is no indication of
latchup.
VCCINT (V)
1.60
0.4
0.4
0.3
0.3
0.2
0.2
0.1
0.1
0.0
1.55
1.50
VCCINT
ICCINT
1.45
1.40
ICCINT (A)
Power supply waveforms
Run # (1 sample per second)
Figure 31.
XC2V3000 VCCINT waveform
3.10
3.5
3.0
3.05
2.5
2.0
1.5
1.0
3.00
VCCO
2.95
ICCO
0.5
0.0
2.90
2
1
3
4
5
Run # (1 sample per second)
Figure 32.
XC2V3000 VCCO waveform
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ICCO (A)
VCCO (V)
Power supply waveforms
THE CHIP PROTECTOR
Run #
1
2
3
4
5
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
Condition
Number of SEFI
VDD
Chip 1 Chip 2 Chip 3 Chip 4 Chip 5 Chip 6
1.425
0
0
0
0
0
0
1.425
14
10
10
13
12
17
1.500
20
9
16
18
15
14
1.575
14
18
13
15
16
13
1.425
16
11
16
11
20
18
Table 31. XC2V3000 number of SEFI for each chip
Note: run #1 was a test run with the beam switched off, to test that the tester electronics was working
correctly (cf section 6.3).
7.4.3.4
XC3S1000
The voltage and current waveforms could not be acquired during the experiments for the XC3S1000. The
number of errors, presented in the following table is regular across the six chips tested. Therefore, there is no
indication of latchup.
Run #
1
2
3
4
5
Condition
Number of SEFI
VDD
Chip 1 Chip 2 Chip 3 Chip 4 Chip 5 Chip 6
1.14
0
0
0
0
0
0
1.14
21
14
13
10
29
13
1.20
20
20
21
9
27
23
1.26
26
21
14
17
18
12
1.14
13
15
6
11
18
14
Table 32. XC3S1000 number of SEFI for each chip
Note: run #1 was a test run with the beam switched off, to test that the tester electronics was working
correctly (cf section 6.3).
7.4.3.5
EP1C20
The voltage and current waveforms could not be acquired during the experiments for the EP1C20. The
number of errors, presented in the following table is regular across the six chips tested. Therefore, there is no
indication of latchup.
Run #
1
2
3
4
5
Condition
Number of SEFI
VDD
Chip 1 Chip 2 Chip 3 Chip 4 Chip 5 Chip 6
1.425
0
0
0
0
0
0
1.425
24
17
10
14
28
14
1.500
17
16
6
16
27
22
1.575
19
21
21
17
11
19
1.425
29
11
21
28
23
22
Table 33. EP1C20 number of SEFI for each chip
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THE CHIP PROTECTOR
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
Note: run #1 was a test run with the beam switched off, to test that the tester electronics was working
correctly (cf section 6.3).
7.4.4
Bitmaps of errors
Bitmaps allow to check the expected random distribution of errors in the configuration memory arrays.
Each point in the bitmap represents a failing address. The bitmaps are logical bitmaps, not physical
bitmaps, because the layout of the configuration memory is not available. In the logical bitmaps, the address
LSB are mapped in the x-axis and the address MSB are mapped in the y-axis.
7.4.4.1
XC2V3000
The address refers to the location where the verification bitstream is stored in the tester memory. Valid
addresses for the XC2V3000 are in the range 0x400069 to 0x5D4329. Each address holds 5 bits. Therefore,
the verification bitstream length is 9,588,165 bits.
The bitmaps show the expected random distribution of errors.
XC2V3000 bitmap
4096
3072
Chip 1
Y
Chip 2
Chip 3
2048
Chip 4
Chip 5
Chip 6
1024
0
0
1024
2048
3072
4096
X
Figure 33.
Bitmap for run#2 of XC2V3000
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THE CHIP PROTECTOR
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
XC2V3000 bitmap
4096
3072
Chip 1
Y
Chip 2
Chip 3
2048
Chip 4
Chip 5
Chip 6
1024
0
0
1024
2048
3072
4096
X
Figure 34.
Bitmap for run#3 of XC2V3000
XC2V3000 bitmap
4096
3072
Chip 1
Y
Chip 2
Chip 3
2048
Chip 4
Chip 5
Chip 6
1024
0
0
1024
2048
3072
4096
X
Figure 35.
Bitmap for run#4 of XC2V3000
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THE CHIP PROTECTOR
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
XC2V3000 bitmap
4096
3072
Chip 1
Y
Chip 2
Chip 3
2048
Chip 4
Chip 5
Chip 6
1024
0
0
1024
2048
3072
4096
X
Figure 36.
7.4.4.2
Bitmap for run#5 of XC2V3000
XC3S1000
The address refers to the location where the verification bitstream is stored in the tester memory. Valid
addresses for the XC3S1000 are in the range 0x400068 to 0x49D349. Each address holds 5 bits. Therefore,
the verification bitstream length is 3,219,050 bits.
The bitmaps show the expected random distribution of errors.
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GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
XC3S1000 bitmap
2048
Chip 1
Y
Chip 2
Chip 3
1024
Chip 4
Chip 5
Chip 6
0
0
1024
2048
X
Figure 37.
Bitmap for run#2 of XC3S1000
XC3S1000 bitmap
2048
Chip 1
Y
Chip 2
Chip 3
1024
Chip 4
Chip 5
Chip 6
0
0
1024
2048
X
Figure 38.
Bitmap for run#3 of XC3S1000
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THE CHIP PROTECTOR
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
XC3S1000 bitmap
2048
Chip 1
Y
Chip 2
Chip 3
1024
Chip 4
Chip 5
Chip 6
0
0
1024
2048
X
Figure 39.
Bitmap for run#4 of XC3S1000
XC3S1000 bitmap
2048
Chip 1
Y
Chip 2
Chip 3
1024
Chip 4
Chip 5
Chip 6
0
0
1024
2048
X
Figure 40.
Bitmap for run#5 of XC3S1000
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GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
THE CHIP PROTECTOR
7.4.5
Chip to chip variation
This section presents the chip to chip FIT variations observed. The objective of this section is to check the
neutron flux uniformity.
The FIT variations are defined as the variation relative to the average of the 6 chips tested.
⎛
⎞
FIT Chip(i)
FIT variation for chip(i) (%) = ⎜⎜
− 1⎟⎟ × 100
⎝ Average FIT Chips(1 to 6) ⎠
7.4.5.1
XC2V3000
The FIT variations observed are within the expected statistical uncertainty: –16% to +18%, see Table 29.
Therefore, we verify that the neutron flux is uniform.
SEU FIT variation for each chip XC2V3000
30%
FIT variation (%)
20%
10%
Chip 1
0%
Chip 2
Chip 3
-10%
Chip 4
Chip 5
Chip 6
-20%
-30%
2
3
4
5
Test condition #
Figure 41.
7.4.5.2
Chip to chip FIT variation for XC2V3000
XC3S1000
The FIT variations observed are within the expected statistical uncertainty: –21% to +24%, see Table 29.
Therefore, we verify that the neutron flux is uniform.
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Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
THE CHIP PROTECTOR
SEU FIT variation for each chip XC3S1000
40%
FIT variation (%)
30%
20%
Chip 1
10%
Chip 2
Chip 3
0%
-10%
Chip 4
Chip 5
-20%
Chip 6
-30%
-40%
2
3
4
5
Test condition #
Figure 42.
7.4.5.3
Chip to chip FIT variation for XC3S1000
EP1C20
The FIT variations observed are within the expected statistical uncertainty: –40% to +56%, see Table 29.
Therefore, we verify that the neutron flux is uniform.
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GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
THE CHIP PROTECTOR
SEFI FIT variation for each chip EP1C20
80%
60%
FIT variation (%)
40%
Chip 1
20%
Chip 2
Chip 3
0%
Chip 4
Chip 5
-20%
Chip 6
-40%
-60%
-80%
2
3
4
5
Test condition #
Figure 43.
7.4.6
Chip to chip FIT variation for EP1C20
Consistency check
A consistency test (repetition of the first condition) has been carried out at the end of the test sequence.
The consistency test verifies the stability of the beam, DUT and tester.
7.4.6.1
XC2V3000
Figure 44 verifies that the results of runs #2 and #5 are consistent, taking into account the statistical
uncertainty shown by the error bars.
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THE CHIP PROTECTOR
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
SEFI Consistency Check for XC2V3000
1800
FIT per Chip
1600
1400
Chip 1
1200
Chip 2
Chip 3
1000
Chip 4
800
Chip 5
600
Chip 6
400
Average
200
0
2
5
Test condition #
Figure 44.
7.4.6.2
SEFI consistency check for XC2V3000
XC3S1000
Figure 45 verifies that the results of runs #2 and #5 are consistent, taking into account the statistical
uncertainty shown by the error bars.
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THE CHIP PROTECTOR
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
SEFI Consistency Check for XC3S1000
700
600
Chip 1
FIT per Chip
500
Chip 2
Chip 3
400
Chip 4
300
Chip 5
Chip 6
200
Average
100
0
2
5
Test condition #
Figure 45.
7.4.6.3
SEFI consistency check for XC3S1000
EP1C20
Figure 46 verifies that the results of runs #2 and #5 are consistent, taking into account the statistical
uncertainty shown by the error bars.
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THE CHIP PROTECTOR
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
SEFI Consistency Check for EP1C20
700
600
Chip 1
FIT per Chip
500
Chip 2
Chip 3
400
Chip 4
300
Chip 5
Chip 6
200
Average
100
0
2
5
Test condition #
Figure 46.
7.4.7
SEFI consistency check for EP1C20
Special observations
iRoC has measured the flux uniformity at LANSCE using a specific test board. The test board consists in a
linear array of 18 SRAM chips evenly spaced by 7.7 mm, as shown in Figure 49. The SRAM chips have the
same part number and datecode. Since the chips are assumed identical, the error count variations determine
the flux uniformity. An error count of 500 errors per chip, for the chips in the center of the board, was
targeted in order to have a good statistical accuracy. The measured flux uniformity is shown in Figure 47 and
Figure 48 for the x-axis and y-axis respectively. With relation to Figure 49, the positive x-axis is on the left,
the positive y-axis is on the top.
The factors in Figure 47 and Figure 48 have been used to correct the fluence for each chip, according to its
position on the test board, for the AX1000, APA1000, XC2V3000, XC3S1000 and EP1C20.
A verify operation using the Flash Pro programmer was performed for the APA1000 chips, at the end of
the radiation tests performed. The verify operation was successful for all the APA1000 chips.
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THE CHIP PROTECTOR
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
Flux uniformity at LANSCE
40%
Flux factor (%)
30%
20%
Front X, 1st
10%
Front X, 2nd
0%
Front X, 3rd
-10%
Front X, Avg
-20%
-30%
-40%
-60
-40
-20
0
20
40
60
Offset (mm)
Positive offset is on the right
Figure 47.
Flux uniformity at LANSCE (x-axis)
Flux uniformity at LANSCE
40%
Flux factor (%)
30%
20%
Front Y, 1st
10%
Mid Y, 1st
0%
Back Y, 1st
-10%
Avg Y
-20%
-30%
-40%
-60
-40
-20
0
20
40
60
Offset (mm)
Positive offset is on the bottom
Figure 48.
Flux uniformity at LANSCE (y-axis)
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THE CHIP PROTECTOR
Figure 49.
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
Flux uniformity measurement at LANSCE
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Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
8 LANSCE conclusions
This test report provides the cosmic-ray SER of AX1000, APA1000, XC2V3000, XC3S1000 and EP1C20
devices. The cosmic-ray SER was measured at the LANSCE WNR facility at Los Alamos in February 2004.
Table 34 presents the overall cosmic-ray FIT for each device at sea level in NYC. The overall FIT is
calculated as the average of all chips and test conditions for the XC2V3000, XC3S1000 and EP1C20 devices.
Appendix A details the cross-section and FIT for each chip and test condition.
Device
AX1000
APA1000
XC2V3000
XC3S1000
EP1C20
Overall
FIT (SEFI)
per Device
<0.082
<0.038
1,150
320
460
Overall
FIT (SEU)
per Device
<0.082
<0.038
8,680
1,240
n/a
Table 34. Overall cosmic-ray FIT at sea level in NYC
In Table 34, it is important to understand that no errors were observed for the AX1000 and APA1000, for
any of the test conditions. The given figure of FIT is an upper bound calculated considering one error for all
chips and test conditions. The AX1000 and APA1000, based in Antifuse and Flash processes respectively, are
considered insensitive to terrestrial spectrum of neutrons, therefore extending the test for longer periods
would still produce no errors, and result in lower bounds of FIT.
The readback of the configuration memory is not available for the EP1C20. Therefore, the SEU FIT could
not be measured for the EP1C20.
The neutron flux increases with altitude, and has a maximum at approximately 60,000 ft. The FIT at sea
level, 5,000 ft, 30,000 ft and 60,000 ft is provided in Table 35.
FIT (SEFI) at FIT (SEFI) at FIT (SEFI) at FIT (SEFI) at
sea level
5,000 ft
30,000 ft
60,000 ft
Device
AX1000
APA1000
XC2V3000
XC3S1000
EP1C20
<0.082
<0.038
1,150
320
460
<0.28
<0.13
3,900
1,100
1,600
<12
<5.6
170,000
47,000
67,000
<39
<18
540,000
150,000
220,000
Table 35. Overall cosmic-ray FIT at different altitudes
No occurrences of latchup have been observed for any of the devices. No errors in the configuration
circuitry of the XC2V3000, XC3S1000 or EP1C20 were observed. No hard errors were observed for any of
the devices.
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9 Alpha tests
9.1 Characteristics of the alpha sources
Alpha tests were conducted at iRoC premises using calibrated sources with the following characteristics:
Source No.
Isotope
Active area diameter
Flux at the surface
Uncertainty
1
Am241
20 mm
2760 α/cm²/s
10%
2
Am241
44 mm
21.3 α/cm²/s
6%
Table 36. Characteristics of the alpha sources
The radioactive sources were directly placed at the package surface, which is at 1 mm or less from the die
surface. In addition, the active area is much larger than the die area to ensure that nearly all angles of
incidence are enabled.
A geometry factor has been calculated that takes into account the flux reduction resulting from the
distance of the source to the die. The calculation of the geometry factor is explained in Appendix C.
For a disk shaped source, the formula is:
Gdisk= 1 −
h
h² + ρ ²
Where h is the distance from the source to the die, and ρ is the radius of the source.
Device
Source
No.
AX1000
APA1000
XC2V3000
XC3S1000
EP1C20
1
1
2
2
2
Radius Distance
ρ (mm) h (mm)
10
10
22
22
22
1
1
0.5
0.5
0.5
Gdisk
0.90
0.90
0.98
0.98
0.98
Table 37. Alpha source utilization and geometry factors for each device
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9.2 Tested conditions and schedule
The following tables provide the sequence of conditions that were tested. Additionally to the test
conditions, stability and consistency checks have been performed at the beginning and the end of each test
sequence. A stability test (beam off) has been carried out before irradiation (cf. section 9.4). A consistency
test (repetition of the first condition) has been carried out at the end of the test sequence The order of the test
conditions follows the Test Plan [3].
The tables are extracted from the campaign logbook files in appendix A.3.
Note that chips were irradiated one at a time during alpha tests. Run 21 stands for run 2 and chip 1, run 22
stands for run 2 and chip 2, etc.
Run #
Device
Particle
1
21
22
31
32
41
42
51
52
AX1000
AX1000
AX1000
AX1000
AX1000
AX1000
AX1000
AX1000
AX1000
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
Start
Date
9-Apr
9-Apr
12-Apr
10-Apr
13-Apr
10-Apr
14-Apr
11-Apr
14-Apr
Stop
Time
10:22:02
10:50:02
19:45:04
2:53:03
11:48:04
18:56:03
3:51:04
10:59:03
19:54:05
Date
9-Apr
10-Apr
13-Apr
10-Apr
14-Apr
11-Apr
14-Apr
12-Apr
15-Apr
Time
10:34:02
2:50:01
11:45:03
18:53:02
3:48:03
10:56:02
19:51:03
2:59:03
11:54:04
Condition
Cycle VDD Temp
200ns 1.4 25°C
200ns 1.4 25°C
200ns 1.4 25°C
200ns 1.5 25°C
200ns 1.5 25°C
200ns 1.6 25°C
200ns 1.6 25°C
200ns 1.4 25°C
200ns 1.4 25°C
Table 38. Conditions tested for AX1000
Run #
Device
21
22
APA1000
APA1000
Particle
Date
α−Am241 27-Apr
α−Am241 30-Apr
Start
Stop
Time
17:00:00
17:00:00
Date
30-Apr
3-May
Time
9:00:00
9:00:00
Condition
Cycle VDD Temp
200ns 2.3 25°C
200ns 2.3 25°C
Table 39. Conditions tested for APA1000
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Run #
Device
Particle
1
21
22
31
32
41
42
51
52
XC2V3000
XC2V3000
XC2V3000
XC2V3000
XC2V3000
XC2V3000
XC2V3000
XC2V3000
XC2V3000
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
Start
Date
8-Oct
8-Oct
9-Oct
8-Oct
10-Oct
9-Oct
10-Oct
9-Oct
10-Oct
Stop
Time
12:02:15
19:16:10
11:46:14
22:19:11
12:11:21
1:22:11
15:14:22
4:25:12
18:17:23
Date
8-Oct
8-Oct
9-Oct
9-Oct
10-Oct
9-Oct
10-Oct
9-Oct
10-Oct
Time
14:31:15
22:17:06
14:47:10
1:20:07
15:12:17
4:23:07
18:15:18
7:26:08
21:18:20
Condition
Cycle VDD Temp
200ns 1.43 25°C
200ns 1.43 25°C
200ns 1.43 25°C
200ns 1.50 25°C
200ns 1.50 25°C
200ns 1.58 25°C
200ns 1.58 25°C
200ns 1.43 25°C
200ns 1.43 25°C
Table 40. Conditions tested for XC2V3000
Run #
Device
Particle
1
24
25
26
34
35
36
44
45
46
54
55
56
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
Start
Date
9-Apr
9-Apr
10-Apr
11-Apr
9-Apr
10-Apr
11-Apr
10-Apr
11-Apr
12-Apr
10-Apr
11-Apr
12-Apr
Stop
Time
11:28:01
12:13:02
12:30:02
12:55:03
18:16:02
18:33:02
18:58:02
0:19:02
0:36:03
1:01:03
6:22:02
6:39:02
7:04:03
Date
9-Apr
9-Apr
10-Apr
11-Apr
10-Apr
11-Apr
12-Apr
10-Apr
11-Apr
12-Apr
10-Apr
11-Apr
12-Apr
Time
11:38:02
18:13:01
18:30:02
18:55:03
0:16:02
0:33:02
0:58:02
6:19:01
6:36:02
7:01:02
12:22:02
12:39:02
13:04:02
Condition
Cycle VDD Temp
200ns 1.14 25°C
200ns 1.14 25°C
200ns 1.14 25°C
200ns 1.14 25°C
200ns 1.20 25°C
200ns 1.20 25°C
200ns 1.20 25°C
200ns 1.26 25°C
200ns 1.26 25°C
200ns 1.26 25°C
200ns 1.14 25°C
200ns 1.14 25°C
200ns 1.14 25°C
Table 41. Conditions tested for XC3S1000
Run #
Device
Particle
1
21
22
31
32
41
42
51
52
EP1C20
EP1C20
EP1C20
EP1C20
EP1C20
EP1C20
EP1C20
EP1C20
EP1C20
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
Start
Date
13-Oct
13-Oct
14-Oct
13-Oct
14-Oct
14-Oct
15-Oct
14-Oct
15-Oct
Stop
Time
14:53:38
16:11:06
17:01:12
22:04:07
23:04:14
4:07:08
5:07:16
10:10:11
11:10:18
Date
13-Oct
13-Oct
14-Oct
14-Oct
15-Oct
14-Oct
15-Oct
14-Oct
15-Oct
Time
15:04:27
22:01:04
23:01:10
4:04:06
5:04:12
10:07:07
11:07:14
16:10:09
17:10:15
Condition
Cycle VDD Temp
200ns 1.425 25°C
200ns 1.425 25°C
200ns 1.425 25°C
200ns 1.500 25°C
200ns 1.500 25°C
200ns 1.575 25°C
200ns 1.575 25°C
200ns 1.425 25°C
200ns 1.425 25°C
Table 42. Conditions tested for EP1C20
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9.3 Devices tested
The following tables show the lot codes of the chips that were actually tested:
Chip 1
DOAAJ1
0320
Chip 2
DOJC21
0345
Table 43. Lot codes of the AX1000 chips tested
Chip 1
MF7G7
0247
Chip 2
MF7G7
0247
Table 44. Lot codes of the APA1000 chips tested
Chip 1
AGT0413
A2164275A
Chip 2
AGT0413
A2164275A
Table 45. Lot codes of the XC2V3000 chips tested
Chip 1
FT256AFQ0341
D13989A
Chip 2
FT256AFQ0341
D13989A
Chip 3
FT256AFQ0341
D13990A
Table 46. Lot codes of the XC3S1000 chips tested
Chip 1
Chip 2
AAD9G0413A
AAD9G0413A
Table 47. Lot codes of the EP1C20 chips tested
9.4 Stability without alpha source
An error rate measurement is performed without the alpha source and with the components placed in the
target. The die were covered to avoid ambient light. This aims at verifying the robustness of both the tester
and the DUT board in the test environment.
This experiment was done during 10 minutes and no error occurred (cf run #1 in Table 38 to Table 42)
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10 Alpha results
10.1 Cross-section and FIT calculation
The cross-section defines the sensitivity of a device. The cross-section per chip is defined as σ=N/(F*C)
where N is the total number of errors, F is the fluence and C is the number of chips tested. In this document,
the cross-section is given in cm²/chip.
The FIT is calculated by multiplying the cross-section by the alpha flux emitted by the real package
F(package). The FIT rate per chip is:
FIT = σ(Am241) *F(package) * 109 (error/109hour/chip)
The FIT provided in this report is based on an assumption for package emission F(package) equal to 0.001
α/cm²/hour.
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10.2 Overall FIT results
Table 48 presents the overall alpha particle FIT for an emission rate equal to 0.001 α/cm²/hour. The
overall FIT is calculated as the average of all chips and test conditions for the XC2V3000, XC3S1000 and
EP1C20 devices. Appendix A details the cross-section and FIT for each chip and test condition.
Overall
FIT (SEFI)
per Device
AX1000
< 0.00087
APA1000
< 0.00087
XC2V3000 140 (note 1)
XC3S1000
260
EP1C20
100
Device
Overall
FIT (SEU)
per Device
<0.00087
<0.00087
1040
940
n/a
Table 48. Overall alpha particle FIT for 0.001 a/cm²/hour
Note 1: the SEFI FIT of XC2V3000 was extrapolated by multiplying the SEU FIT by the SEFI/SEU FIT
ratio measured in cosmic-rays tests, 13.5%.
In Table 48, it is important to understand that no errors were observed for the AX1000 and APA1000, for
any of the test conditions. The given figure of FIT is an upper bound calculated considering one error for all
chips and test conditions. The AX1000 and APA1000, based in Antifuse and Flash processes respectively, are
considered insensitive to alpha particles emitted from the packaging, therefore extending the test for longer
periods would still produce no errors, and result in lower bounds of FIT.
The readback of the configuration memory is not available for the EP1C20. Therefore, the SEU FIT could
not be measured for the EP1C20.
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10.3 Accuracy of results
The accuracy of the cross-section results is assessed in this section. The accuracy of the cross-section is
the sum of the error count and fluence measurement accuracies.
10.3.1 Error count statistics
The error count is generally described by a Poisson distribution, cf appendix C.1 in [2]. If N errors occur,
the mean error count is approximated by N. The standard deviation is given by √N.
The error count can be bounded using the upper and lower limits in Table 11, extracted from appendix C.2
of [2]. In using this table, the first column is the actual number of events observed in the experiment. The
upper and lower limits define the 95% confidence interval for the true mean of the distribution. The upper and
lower limits for any number of events can be calculated using the formulas given in appendix B.
The accuracy of the error count is defined in this report using 95% confidence intervals. The 95%
confidence limits depend on the number of errors observed. The number of errors is detailed in appendix A
for each chip and test condition.
The following table summarizes the 95% confidence intervals for each device. For example, the overall
number of SEU per chip and test condition is 235 for the XC2V3000. By using the formulas given in
appendix B, we find that the lower and upper limits are 205.9 and 267.0 respectively. The limits in Table 49
are calculated as (Lower limit/Mean error count – 1)*100 = -12%, and (Upper limit/Mean error count –
1)*100 = +14%.
Device
AX1000
APA1000
Error type
SEFI
SEFI
SEFI
XC2V3000
SEU
SEFI
XC3S1000
SEU
EP1C20
SEFI
Errors
0
0
n/a
n/a
n/a
235
471
110
329
1315
395
1186
45
90
359
Lower limit
n/a
n/a
n/a
n/a
n/a
-12%
-9%
-18%
-11%
-6%
-10%
-6%
-27%
-20%
-10%
Upper limit
n/a
n/a
n/a
n/a
n/a
+14%
+9%
+21%
+11%
+6%
+10%
+6%
+34%
+23%
+11%
Comment
No errors observed
No errors observed
Errors per chip and test condition
Errors for all chips per test condition
Errors for all chips and test conditions
Errors per chip and test condition
Errors for all chips per test condition
Errors per chip and test condition
Errors for all chips per test condition
Errors for all chips and test conditions
Errors per chip and test condition
Errors for all chips per test condition
Errors per chip and test condition
Errors for all chips per test condition
Errors for all chips and test conditions
Table 49. 95% confidence intervals for all devices
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10.3.2 Fluence measurement accuracy
The accuracy of the fluence measurement is indicated in Table 50.
Device
Source
No.
Accuracy
AX1000
APA1000
XC2V3000
XC3S1000
EP1C20
1
1
2
2
2
10%
10%
6%
6%
6%
Table 50. Alpha source utilization and accuracy for each device
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10.4 Detailed analysis
Detailed analysis of the results is presented hereafter. The following table summarizes the analyses
presented for each device:
Analysis
Voltage influence on FIT
Analysis of critical vs non critical SEU
Analysis of single event latchup
Bitmaps of errors
Chip to chip variations
Special observations
AX1000
APA1000
√
√
XC2V3000
√
√
√
√
√
√
XC3S1000
√
√
√
√
√
√
EP1C20
√
√
√
√
Table 51. Detailed analysis for alpha tests
Many of the detailed analysis cannot be performed for the AX1000 and APA1000 because no errors were
observed for these devices.
10.4.1 Voltage influence on FIT
The SEFI and SEU FIT dependence vs VDD is presented in this section. The FIT is plotted separately for
each chip. The FIT average of all chips is also plotted, and the average FIT is used to fit an exponential curve.
10.4.1.1 XC2V3000
Figure 50 shows a regular decrease of FIT at the higher VDD.
SEU FIT for XC2V3000
FIT per Chip
1500
1000
500
Chip 1
y = 2.0E+03e
Chip 2
-4.5E-01x
Average
0
1.40
1.45
1.50
1.55
1.60
VDD
Figure 50.
SEU FIT of XC2V3000 vs VDD
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10.4.1.2 XC3S1000
Figure 51 and Figure 52 show a regular decrease of FIT at the higher VDD, as expected. The SEU FIT of
chip no. 3 is higher than the uncertainty assessment made in section 10.3.1. This dispersion will be studied in
section 10.4.5.2.
FIT per Chip
SEFI FIT for XC3S1000
350
300
250
200
150
100
50
0
Chip 1
Chip 2
y = 1.1E+03e
1.10
1.15
Chip 3
-1.2E+00x
1.20
Average
1.25
1.30
VDD
Figure 51.
SEFI FIT of XC3S1000 vs VDD
SEU FIT for XC3S1000
FIT per Chip
2000
y = 2.5E+03e
-8.3E-01x
Chip 1
1500
Chip 2
1000
Chip 3
Average
500
0
1.10
1.15
1.20
1.25
1.30
VDD
Figure 52.
SEU FIT of XC3S1000 vs VDD
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10.4.1.3 EP1C20
Figure 53 shows a regular decrease of FIT at the higher VDD.
SEFI FIT for EP1C20
FIT per Chip
200
y = 9.6E+04e
150
-4.7E+00x
Chip 1
100
Chip 2
Average
50
0
1.40
1.45
1.50
1.55
1.60
VDD
Figure 53.
SEFI FIT of EP1C20 vs VDD
10.4.2 Analysis of critical vs non critical SEU
The test strategy enables to identify the critical and the non critical SEU in the configuration memory, that
is, those SEU in the configuration memory that create an SEFI, and those that do not create an SEFI.
10.4.2.1 XC3S1000
Figure 54 presents the ratio SEFI / Total SEU for each chip and test condition. The overall ratio is 28%
independent of the test condition.
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SEFI / Total SEU (%)
Ratio SEFI / Total SEU for XC3S1000
50%
40%
Chip 1
30%
Chip 2
20%
Chip 3
10%
Average
0%
2
3
4
5
Test condition #
Figure 54.
SEFI vs Total SEU XC3S1000
10.4.3 Analysis of single event latchup
Single event latchup (SEL) consists in the radiation induced activation of parasitic thyristor structures in
the CMOS process. In case a process is sensitive to latchup, the latchup rate is higher at the higher voltage,
temperature and particle energy.
Latchups result in increased current consumption, partial or total configuration memory wipe out, or
complete loss of operation. Because the current is limited for protection, latchups lead to voltage shutdown to
the DUT. The way the tester detects latchups is by monitoring the DUT supply voltages. In case a latchup is
detected, the tester logs the event and switches the power off/on for recovering.
A particular case of latchup is the microlatchup. The microlatchup consists in the activation of a parasitic
thyristor structure with weak on-resistance and a low increase of current consumption. In case of
microlatchup, the voltage and current can find a stability point that cannot be detected by the tester. In this
case, one or more chips are partially or totally wiped out, or experience complete loss of operation during the
duration of a test condition.
No latchups were detected for any of the devices and conditions tested. In the following subsections, the
voltage and current waveforms, acquired during the experiments, will be presented for each device and test
condition. The sensitivity to microlatchup will be analyzed by inspection of the voltage and current
waveforms and correlation with the observed number of errors in each chip.
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10.4.3.1 AX1000
We observe regular voltage and current waveforms in Figure 55 and Figure 56. No errors were observed
for any of the chips and conditions tested. Therefore, there is no indication of latchup.
0.15
1.7
1.6
1.5
1.4
VCCA, VCCIB
ICCA+ICCIB
0.10
0.05
0.00
1.3
ICCA+ICCIB (A)
VCCA, VCCIB (V)
Power supply waveforms
Run # (1 sample per second)
1.7
0.15
1.6
1.5
VCCA, VCCIB
ICCA+ICCIB
1.4
1.3
0.10
0.05
0.00
ICCA+ICCIB (A)
VCCA, VCCIB (V)
Power supply waveforms
Run # (1 sample per second)
Figure 55.
AX1000 VCCA and VCCIB waveforms
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3.35
3.30
VCCDA
3.25
ICCDA
3.20
2
3
0.006
0.005
0.004
0.003
0.002
0.001
0.000
ICCDA (A)
VCCDA (V)
3.40
0.006
0.005
0.004
0.003
0.002
0.001
0.000
ICCDA (A)
Power supply waveforms
4
Run # (1 sample per second)
Power supply waveforms
VCCDA (V)
3.40
3.35
3.30
VCCDA
3.25
ICCDA
3.20
4
5
Run # (1 sample per second)
Figure 56.
AX1000 VCCDA waveform
10.4.3.2 XC2V3000
The voltage and current waveforms could not be acquired during the experiments for the XC2V3000. The
number of SEU errors, presented in the following table is regular across the chips tested. Therefore, there is
no indication of latchup.
Run #
1
2
3
4
5
Condition Number of SEU
VDD Chip 1 Chip 2
1.425
0
0
1.425
230
250
1.500
233
218
1.575
222
227
1.425
251
251
Table 52. XC2V3000 number of SEU for each chip
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10.4.3.3 XC3S1000
The voltage and current waveforms could not be acquired during the experiments for the XC3S1000. The
number of SEFI errors, presented in the following table is regular across the six chips tested. Therefore, there
is no indication of latchup.
Run #
1
2
3
4
5
Condition
Number of SEFI
VDD Chip 1 Chip 2 Chip 3
1.14
0
0
0
1.14
131
112
119
1.20
112
97
96
1.26
111
98
107
1.14
104
114
114
Table 53. XC3S1000 number of SEFI for each chip
Note: run #1 was a test run with the beam switched off, to test that the tester electronics was working
correctly (cf section 9.4).
10.4.3.4 EP1C20
The voltage and current waveforms could not be acquired during the experiments for the EP1C20. The
number of SEFI errors, presented in the following table is regular across the chips tested. Therefore, there is
no indication of latchup.
Run #
1
2
3
4
5
Condition Number of SEFI
VDD Chip 1 Chip 2
1.425
0
0
1.425
53
56
1.500
38
47
1.575
24
31
1.425
54
56
Table 54. EP1C20 number of SEFI for each chip
10.4.4 Bitmaps of errors
Bitmaps allow to check the expected random distribution of errors in the configuration memory arrays.
Each point in the bitmap represents a failing address. The bitmaps are logical bitmaps, not physical
bitmaps, because the layout of the configuration memory is not available. In the logical bitmaps, the address
LSB are mapped in the x-axis and the address MSB are mapped in the y-axis.
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10.4.4.1 XC2V3000
The address refers to the location where the verification bitstream is stored in the tester memory. Valid
addresses for the XC2V3000 are in the range 0x400069 to 0x5D4329. Each address holds 5 bits. Therefore,
the verification bitstream length is 9,588,165 bits.
The bitmaps show the expected random distribution of errors.
XC2V3000 bitmap
4096
Y
3072
Chip 1
2048
Chip 2
1024
0
0
1024
2048
3072
4096
X
Figure 57.
Bitmap for run#2 of XC2V3000
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XC2V3000 bitmap
4096
Y
3072
Chip 1
2048
Chip 2
1024
0
0
1024
2048
3072
4096
X
Figure 58.
Bitmap for run#3 of XC2V3000
XC2V3000 bitmap
4096
Y
3072
Chip 1
2048
Chip 2
1024
0
0
1024
2048
3072
4096
X
Figure 59.
Bitmap for run#4 of XC2V3000
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XC2V3000 bitmap
4096
Y
3072
Chip 1
2048
Chip 2
1024
0
0
1024
2048
3072
4096
X
Figure 60.
Bitmap for run#5 of XC2V3000
10.4.4.2 XC3S1000
The address refers to the location where the verification bitstream is stored in the tester memory. Valid
addresses for the XC3S1000 are in the range 0x400068 to 0x49D349. Each address holds 5 bits. Therefore,
the verification bitstream length is 3,219,050 bits.
The bitmaps show the expected random distribution of errors.
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XC3S1000 bitmap
2048
Y
Chip 1
1024
Chip 2
Chip 3
0
0
1024
2048
X
Figure 61.
Bitmap for run#2 of XC3S1000
XC3S1000 bitmap
2048
Y
Chip 1
1024
Chip 2
Chip 3
0
0
1024
2048
X
Figure 62.
Bitmap for run#3 of XC3S1000
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XC3S1000 bitmap
2048
Y
Chip 1
1024
Chip 2
Chip 3
0
0
1024
2048
X
Figure 63.
Bitmap for run#4 of XC3S1000
XC3S1000 bitmap
2048
Y
Chip 1
1024
Chip 2
Chip 3
0
0
1024
2048
X
Figure 64.
Bitmap for run#5 of XC3S1000
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10.4.5 Chip to chip variation
This section presents the chip to chip FIT variations observed. The objective of this section is to compare
the sensitivity of different chips.
The FIT variations are defined as the variation relative to the average of the chips tested.
⎛
⎞
FIT Chip(i)
FIT variation for chip(i) (%) = ⎜⎜
− 1⎟⎟ × 100
⎝ Average FIT Chips(1 to 3) ⎠
10.4.5.1 XC2V3000
The FIT variations observed are within the expected statistical uncertainty: –12% to +14%, see Table 49.
FIT variation (%) .
SEU FIT variation for each chip XC2V3000
10%
5%
Chip 1
0%
Chip 2
-5%
-10%
2
Figure 65.
3
4
Test condition #
5
Chip to chip FIT variation for XC2V3000
10.4.5.2 XC3S1000
The FIT variation of chip no. 3 exceeds the assessed statistical uncertainty –10% to +10% (cf Table 49).
In order to explain this phenomenon, we consider that chips no. 1 and 2, and chip no. 3 come from two
different lots (cf Table 46). Process or passivation layer thickness differences between the two lots should be
assessed to confirm this explanation.
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FIT variation (%) .
SEU FIT variation for each chip XC3S1000
100%
75%
50%
25%
0%
-25%
-50%
-75%
-100%
Chip 1
Chip 2
Chip 3
2
Figure 66.
3
4
Test condition #
5
Chip to chip FIT variation for XC3S1000
10.4.5.3 EP1C20
The FIT variations observed are within the expected statistical uncertainty: –27% to +34%, see Table 49.
FIT variation (%) .
SEFI FIT variation for each chip EP1C20
15%
10%
5%
Chip 1
0%
Chip 2
-5%
-10%
-15%
2
Figure 67.
3
4
Test condition #
5
Chip to chip FIT variation for EP1C20
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10.4.6 Consistency check
A consistency test (repetition of the first condition) has been carried out at the end of the test sequence.
The consistency test verifies the stability of the alpha source, DUT and tester.
10.4.6.1 XC2V3000
Figure 68 verifies that the results of runs #2 and #5 are consistent, taking into account the statistical
uncertainty shown by the error bars.
FIT per Chip
SEU Consistency Check for XC2V3000
1400
1200
1000
800
600
400
200
0
Chip 1
Chip 2
Average
2
5
Test condition #
Figure 68.
SEU consistency check for XC2V3000
10.4.6.2 XC3S1000
Figure 69 verifies that the results of runs #2 and #5 are consistent, taking into account the statistical
uncertainty shown by the error bars.
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FIT per Chip
SEFI Consistency Check for XC3S1000
350
300
250
200
150
100
50
0
Chip 1
Chip 2
Chip 3
Average
2
5
Test condition #
Figure 69.
SEFI consistency check for XC3S1000
10.4.6.3 EP1C20
Figure 70 verifies that the results of runs #2 and #5 are consistent, taking into account the statistical
uncertainty shown by the error bars.
FIT per Chip
SEFI Consistency Check for EP1C20
160
140
120
100
80
60
40
20
0
Chip 1
Chip 2
Average
2
5
Test condition #
Figure 70.
SEFI consistency check for EP1C20
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10.4.7 Special observations
One occurrence of an error in the configuration circuitry of XC3S1000 was observed in run no. 3 for chip
no 3. As a result, the readback operation failed and the configuration memory appeared to be entirely wiped
out. The FIT rate for configuration circuitry failures is calculated using the formula in section 10.1 and
considering that the total fluence for XC3S1000 was 5.0E+06 α/cm². Therefore, FIT = (1 event / 5.0E+06
α/cm²) * 0.001 α/cm²/hour * 1E+09 hour = 0.20.
A verify operation using the Flash Pro programmer was performed for the APA1000 chips, at the end of
the radiation tests performed. The verify operation was successful for all the APA1000 chips.
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11 Alpha conclusions
This test report provides the alpha particle SER of AX1000, APA1000, XC2V3000, XC3S1000 and
EP1C20 devices. The alpha particle SER was measured at iRoC premises using calibrated Am241 foil
sources in April and October 2004.
Table 55 presents the overall alpha particle FIT for an emission rate equal to 0.001 α/cm²/hour. The
overall FIT is calculated as the average of all chips and test conditions for the XC2V3000, XC3S1000 and
EP1C20 devices. Appendix A details the cross-section and FIT for each chip and test condition.
Overall
FIT (SEFI)
per Device
AX1000
< 0.00087
APA1000
< 0.00087
XC2V3000 140 (note 1)
XC3S1000
260
EP1C20
100
Device
Overall
FIT (SEU)
per Device
<0.00087
<0.00087
1040
940
n/a
Table 55. Overall alpha particle FIT for 0.001 a/cm²/hour
Note 1: the SEFI FIT of XC2V3000 was extrapolated by multiplying the SEU FIT by the SEFI/SEU FIT
ratio measured in cosmic-rays tests, 13.5%.
In Table 55, it is important to understand that no errors were observed for the AX1000 and APA1000, for
any of the test conditions. The given figure of FIT is an upper bound calculated considering one error for all
chips and test conditions. The AX1000 and APA1000, based in Antifuse and Flash processes respectively, are
considered insensitive to alpha particles emitted from the packaging, therefore extending the test for longer
periods would still produce no errors, and result in lower bounds of FIT.
The readback of the configuration memory is not available for the EP1C20. Therefore, the SEU FIT could
not be measured for the EP1C20.
No occurrences of latchup were observed for any of the devices. One error in the configuration circuitry of
XC3S1000 was observed, and the resulting FIT is 0.20. No hard errors were observed for any of the devices.
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A Details of cross-sections and FIT
A.1
14 MeV neutrons
AX1000
Run #
Device
1
2
3
4
5
AX1000
AX1000
AX1000
AX1000
AX1000
Run #
1
2
3
4
5
Energy
(MeV)
14
14
14
14
14
Start
Date
Dec-16
Dec-16
Dec-16
Dec-17
Time
14:29:13
14:47:15
17:00:46
9:10:42
Stop
Time
14:44:16
16:59:27
9:08:22
10:21:37
Condition
Fluence 1
Fluence 2
Cycle VDD Temp (neutron/cm²) (neutron/cm²)
200ns 1.4 25°C
0.0E+00
0.0E+00
200ns 1.4 25°C
6.5E+10
4.7E+10
200ns 1.5 25°C
5.4E+10
3.9E+10
200ns 1.6 25°C
6.4E+10
4.7E+10
200ns 1.4 25°C
Number of SEFI
FIT (SEFI/10^9hour/chip)
Comments
Chip 1 Chip 2 Chip 3 Chip 4 Chip 5 Chip 1 Chip 2 Chip 3 Chip 4 Chip 5
0
0
0
0
0
#
#
#
#
#
stability check
0
0
0
0
0
0.0
0.0
0.0
0.0
0.0
0
0
0
0
0
0.0
0.0
0.0
0.0
0.0
0
0
0
0
0
0.0
0.0
0.0
0.0
0.0
consistency check, not done
APA1000
Run #
Device
1
2
3
4
5
APA1000
APA1000
APA1000
APA1000
APA1000
Run #
1
2
3
4
5
Energy
(MeV)
14
14
14
14
14
Start
Date
Dec-16
Dec-16
Dec-16
Dec-17
Time
14:30:26
14:47:31
17:01:35
9:10:45
Stop
Time
14:44:14
16:59:35
9:08:20
10:21:34
Condition
Fluence 1
Fluence 2
Cycle VDD Temp (neutron/cm²) (neutron/cm²)
200ns 2.3 25°C
0.0E+00
0.0E+00
200ns 2.3 25°C
3.6E+10
2.8E+10
200ns 2.5 25°C
3.0E+10
2.3E+10
200ns 2.7 25°C
3.5E+10
2.8E+10
200ns 2.3 25°C
Number of SEFI
FIT (SEFI/10^9hour/chip)
Comments
Chip 1 Chip 2 Chip 3 Chip 4 Chip 5 Chip 6 Chip 1 Chip 2 Chip 3 Chip 4 Chip 5 Chip 6
0
0
0
0
0
0
#
#
#
#
#
# stability check
0
0
0
0
0
0
0.0
0.0
0.0
0.0
0.0
0.0
0
0
0
0
0
0
0.0
0.0
0.0
0.0
0.0
0.0
0
0
0
0
0
0
0.0
0.0
0.0
0.0
0.0
0.0
consistency check, not done
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XC2V3000
Run #
Device
1
2
3
4
5
XC2V3000
XC2V3000
XC2V3000
XC2V3000
XC2V3000
Run #
1
2
3
4
5
Run #
1
2
3
4
5
Energy
(MeV)
14
14
14
14
14
Start
Date
Dec-17
Dec-17
Dec-17
Dec-17
Dec-17
Time
13:31:49
13:36:31
14:31:12
15:08:40
15:52:07
Number of SEFI
Chip 1 Chip 2 Chip 3 Chip 4 Chip 5 Chip 6
0
0
0
0
0
0
22
17
25
19
11
11
21
12
18
21
17
18
14
16
15
25
13
18
14
18
23
20
16
16
Chip 1
0
138
131
132
145
Number of SEU
Chip 2 Chip 3 Chip 4 Chip 5
0
0
0
0
116 139 118
93
124 133 127 111
117 114 122 108
137 144 112 101
Chip 6
0
97
126
105
130
Stop
Time
13:36:11
14:29:04
15:08:02
15:46:06
16:34:41
Condition
Fluence 1
Fluence 2
Cycle VDD Temp (neutron/cm²) (neutron/cm²)
200ns 1.425 25°C
0.0E+00
0.0E+00
200ns 1.425 25°C
3.5E+08
3.2E+08
200ns 1.500 25°C
3.8E+08
3.5E+08
200ns 1.575 25°C
3.7E+08
3.4E+08
200ns 1.425 25°C
4.0E+08
3.7E+08
Chip 1
#
887
764
527
491
FIT (SEFI/10^9hour/chip)
Chip 2 Chip 3 Chip 4 Chip 5
#
#
#
#
685 1007 836 484
437 655 834 675
602 564 1027 534
631 806 765 612
Comments
Chip 6
# stability check
484
715
739
612 consistency check
Chip 1
#
5561
4766
4965
5080
FIT (SEU/10^9hour/chip)
Chip 2 Chip 3 Chip 4 Chip 5
#
#
#
#
4675 5601 5191 4091
4512 4839 5044 4409
4401 4288 5010 4435
4800 5045 4284 3863
Comments
Chip 6
# stability check
4267
5005
4312
4972 consistency check
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THE CHIP PROTECTOR
A.2
LANSCE
AX1000
Run #
Device
1
2
3
4
5
AX1000
AX1000
AX1000
AX1000
Run #
1
2
3
4
5
Run #
1
2
3
4
5
Chip 1
0.0E+00
1.2E+10
1.0E+10
1.2E+10
Energy
(MeV)
LANSCE
LANSCE
LANSCE
LANSCE
Chip 2
0.0E+00
1.2E+10
1.0E+10
1.1E+10
Start
Date
17-Feb
17-Feb
17-Feb
18-Feb
Stop
Time
14:27:15
15:46:19
22:41:50
4:28:29
Fluence (n/cm²)
Chip 3
0.0E+00
1.2E+10
1.0E+10
1.1E+10
Date
17-Feb
17-Feb
18-Feb
18-Feb
Chip 4
0.0E+00
1.3E+10
1.1E+10
1.2E+10
Time
14:38:02
22:40:35
4:27:11
9:46:52
Condition
Cycle VDD Temp
200ns 1.4 25°C
200ns 1.4 25°C
200ns 1.5 25°C
200ns 1.6 25°C
Chip 5
0.0E+00
1.2E+10
1.0E+10
1.1E+10
Number of SEFI
FIT (SEFI/10^9hour/chip)
Comments
Chip 1 Chip 2 Chip 3 Chip 4 Chip 5 Chip 1 Chip 2 Chip 3 Chip 4 Chip 5
0
0
0
0
0
#
#
#
#
#
stability check
0
0
0
0
0
0.0
0.0
0.0
0.0
0.0
0
0
0
0
0
0.0
0.0
0.0
0.0
0.0
0
0
0
0
0
0.0
0.0
0.0
0.0
0.0
consistency check not done
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THE CHIP PROTECTOR
APA1000
Run #
Device
1
2
3
4
5
APA1000
APA1000
APA1000
APA1000
APA1000
Energy
(MeV)
LANSCE
LANSCE
LANSCE
LANSCE
LANSCE
Chip 1
0.0E+00
1.2E+10
1.3E+10
1.3E+10
4.1E+10
Chip 2
0.0E+00
1.1E+10
1.2E+10
1.2E+10
3.7E+10
Run #
1
2
3
4
5
Run #
1
2
3
4
5
Start
Date
18-Feb
18-Feb
18-Feb
18-Feb
19-Feb
Stop
Time
10:36:44
10:47:46
15:22:12
21:09:08
5:56:33
Fluence (n/cm²)
Chip 3
0.0E+00
1.1E+10
1.2E+10
1.1E+10
3.7E+10
Date
18-Feb
18-Feb
18-Feb
19-Feb
19-Feb
Chip 4
0.0E+00
1.2E+10
1.3E+10
1.3E+10
4.0E+10
Time
10:46:44
15:21:14
21:07:56
5:55:00
21:26:26
Condition
Cycle VDD Temp
200ns 2.3 25°C
200ns 2.3 25°C
200ns 2.5 25°C
200ns 2.7 25°C
200ns 2.3 25°C
Chip 5
0.0E+00
1.1E+10
1.1E+10
1.1E+10
3.7E+10
Number of SEFI
FIT (SEFI/10^9hour/chip)
Comments
Chip 1 Chip 2 Chip 3 Chip 4 Chip 5 Chip 1 Chip 2 Chip 3 Chip 4 Chip 5
0
0
0
0
0
#
#
#
#
#
stability check
0
0
0
0
0
0.0
0.0
0.0
0.0
0.0
0
0
0
0
0
0.0
0.0
0.0
0.0
0.0
0
0
0
0
0
0.0
0.0
0.0
0.0
0.0
0
0
0
0
0
0.0
0.0
0.0
0.0
0.0 consistency check
This document is an iRoC Technologies document © copyright 2004 – The information it contains may change without notice.
iRoC Technologies Confidentiality level – Release date: Apr-04
98
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
THE CHIP PROTECTOR
XC2V3000
Run #
Device
1
2
3
4
5
XC2V3000
XC2V3000
XC2V3000
XC2V3000
XC2V3000
Run #
1
2
3
4
5
Run #
1
2
3
4
5
Run #
1
2
3
4
5
Chip 1
0.0E+00
1.9E+08
1.6E+08
2.0E+08
1.9E+08
Energy
(MeV)
LANSCE
LANSCE
LANSCE
LANSCE
LANSCE
Start
Date
17-Feb
17-Feb
17-Feb
17-Feb
17-Feb
Stop
Time
14:28:11
15:46:53
15:59:04
16:10:38
16:23:38
Fluence SEFI (n/cm²)
Chip 2 Chip 3 Chip 4 Chip 5
0.0E+00 0.0E+00 0.0E+00 0.0E+00
1.7E+08 1.9E+08 1.8E+08 1.7E+08
1.5E+08 1.6E+08 1.6E+08 1.5E+08
1.8E+08 2.0E+08 2.0E+08 1.8E+08
1.7E+08 1.9E+08 1.9E+08 1.7E+08
Date
17-Feb
17-Feb
17-Feb
17-Feb
17-Feb
Chip 6
0.0E+00
1.8E+08
1.6E+08
2.0E+08
1.9E+08
Time
14:38:56
15:57:28
16:09:44
16:22:29
16:35:45
Chip 1
0.0E+00
2.4E+08
2.2E+08
2.6E+08
2.5E+08
Condition
Cycle VDD Temp
200ns 1.425 25°C
200ns 1.425 25°C
200ns 1.500 25°C
200ns 1.575 25°C
200ns 1.425 25°C
Fluence SEU (n/cm²)
Chip 2 Chip 3 Chip 4 Chip 5
0.0E+00 0.0E+00 0.0E+00 0.0E+00
2.2E+08 2.4E+08 2.4E+08 2.1E+08
2.0E+08 2.2E+08 2.2E+08 2.0E+08
2.3E+08 2.5E+08 2.5E+08 2.3E+08
2.3E+08 2.5E+08 2.5E+08 2.3E+08
Number of SEFI
Chip 1 Chip 2 Chip 3 Chip 4 Chip 5 Chip 6
0
0
0
0
0
0
14
10
10
13
12
17
20
9
16
18
15
14
14
18
13
15
16
13
16
11
16
11
20
18
Chip 1
#
1045
1723
979
1173
FIT (SEFI/10^9hour/chip)
Chip 2 Chip 3 Chip 4 Chip 5
#
#
#
#
825 754 984 1003
856 1391 1571 1446
1390 918 1064 1253
890 1184 817 1640
Number of SEU
Chip 2 Chip 3 Chip 4 Chip 5
0
0
0
0
101 167 130 135
127 126 136 111
137 151 148 127
147 195 136 125
Chip 1
#
9053
10614
7978
9417
FIT (SEU/10^9hour/chip)
Chip 2 Chip 3 Chip 4 Chip 5
#
#
#
#
6514 9847 7696 8824
8860 8037 8709 7848
8266 8329 8196 7766
8938 10841 7591 7704
Chip 1
0
155
168
146
171
Chip 6
0
168
157
142
153
Comments
Chip 6
# stability check
1299
1234
931
1350 consistency check
Comments
Chip 6
# stability check
10040
10149
7939
8621 consistency check
This document is an iRoC Technologies document © copyright 2004 – The information it contains may change without notice.
iRoC Technologies Confidentiality level – Release date: Apr-04
99
Chip 6
0.0E+00
2.3E+08
2.2E+08
2.5E+08
2.5E+08
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
THE CHIP PROTECTOR
XC3S1000
Run #
Device
1
2
3
4
5
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
Run #
1
2
3
4
5
Run #
1
2
3
4
5
Run #
1
2
3
4
5
Chip 1
0.0E+00
7.8E+08
8.5E+08
8.4E+08
4.4E+08
Energy
(MeV)
LANSCE
LANSCE
LANSCE
LANSCE
LANSCE
Start
Date
17-Feb
17-Feb
17-Feb
17-Feb
17-Feb
Stop
Time
17:16:20
17:25:56
17:52:36
19:41:23
20:08:11
Fluence SEFI (n/cm²)
Chip 2 Chip 3 Chip 4 Chip 5
0.0E+00 0.0E+00 0.0E+00 0.0E+00
7.4E+08 6.7E+08 7.0E+08 7.7E+08
8.1E+08 7.3E+08 7.7E+08 8.5E+08
8.0E+08 7.2E+08 7.5E+08 8.3E+08
4.2E+08 3.8E+08 4.0E+08 4.4E+08
Number of SEFI
Chip 1 Chip 2 Chip 3 Chip 4 Chip 5 Chip 6
0
0
0
0
0
0
21
14
13
10
29
13
20
20
21
9
27
23
26
21
14
17
18
12
13
15
6
11
18
14
Number of SEU
Chip 1 Chip 2 Chip 3 Chip 4 Chip 5 Chip 6
0
0
0
0
0
0
96
73
52
70
95
97
87
67
71
47
81
90
89
59
54
78
77
75
104 100
82
93
104
95
Date
17-Feb
17-Feb
17-Feb
17-Feb
17-Feb
Chip 6
0.0E+00
8.1E+08
8.9E+08
8.7E+08
4.6E+08
Time
17:25:22
17:51:15
19:40:45
20:07:31
20:23:55
Chip 1
0.0E+00
8.4E+08
9.3E+08
9.1E+08
4.9E+08
Condition
Cycle VDD Temp
200ns 1.140 25°C
200ns 1.140 25°C
200ns 1.200 25°C
200ns 1.260 25°C
200ns 1.140 25°C
Fluence SEU (n/cm²)
Chip 2 Chip 3 Chip 4 Chip 5
0.0E+00 0.0E+00 0.0E+00 0.0E+00
8.0E+08 7.2E+08 7.5E+08 8.3E+08
8.9E+08 8.0E+08 8.3E+08 9.2E+08
8.7E+08 7.8E+08 8.1E+08 9.0E+08
4.7E+08 4.2E+08 4.4E+08 4.9E+08
Chip 6
0.0E+00
8.7E+08
9.6E+08
9.4E+08
5.1E+08
Chip 1
#
378
328
435
411
FIT (SEFI/10^9hour/chip)
Chip 2 Chip 3 Chip 4 Chip 5
#
#
#
#
264 273 201 527
344 401 165 447
368 273 317 304
497 221 388 574
Comments
Chip 6
# stability check
225
363
193
426 consistency check
Chip 1
#
1598
1311
1371
2971
FIT (SEU/10^9hour/chip)
Chip 2 Chip 3 Chip 4 Chip 5
#
#
#
#
1276 1009 1300 1597
1060 1246 790 1232
954 969 1341 1198
2999 2729 2965 3000
Comments
Chip 6
# stability check
1556
1307
1113
2616 consistency check
This document is an iRoC Technologies document © copyright 2004 – The information it contains may change without notice.
iRoC Technologies Confidentiality level – Release date: Apr-04
100
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
THE CHIP PROTECTOR
EP1C20
Run #
Device
1
2
3
4
5
EP1C20
EP1C20
EP1C20
EP1C20
EP1C20
Run #
1
2
3
4
5
Run #
1
2
3
4
5
Chip 1
0.0E+00
6.4E+08
4.9E+08
6.2E+08
6.2E+08
Energy
(MeV)
LANSCE
LANSCE
LANSCE
LANSCE
LANSCE
Start
Date
17-Feb
17-Feb
17-Feb
17-Feb
17-Feb
Stop
Time
20:58:26
21:09:30
21:49:43
22:04:36
22:22:38
Date
17-Feb
17-Feb
17-Feb
17-Feb
17-Feb
Fluence SEFI (n/cm²)
Chip 2 Chip 3 Chip 4 Chip 5
0.0E+00 0.0E+00 0.0E+00 0.0E+00
5.9E+08 5.5E+08 6.2E+08 6.7E+08
4.5E+08 4.2E+08 4.7E+08 5.1E+08
5.7E+08 5.3E+08 5.9E+08 6.5E+08
5.6E+08 5.3E+08 5.9E+08 6.5E+08
Number of SEFI
Chip 1 Chip 2 Chip 3 Chip 4 Chip 5 Chip 6
0
0
0
0
0
0
24
17
10
14
28
14
17
16
6
16
27
22
19
21
21
17
11
19
29
11
21
28
23
22
Time
21:08:40
21:27:50
22:03:20
22:21:21
22:39:26
Condition
Cycle VDD Temp
200ns 1.425 25°C
200ns 1.425 25°C
200ns 1.500 25°C
200ns 1.575 25°C
200ns 1.425 25°C
Chip 6
0.0E+00
6.9E+08
5.2E+08
6.6E+08
6.6E+08
Chip 1
#
522
488
430
656
FIT (SEFI/10^9hour/chip)
Chip 2 Chip 3 Chip 4 Chip 5
#
#
#
#
405 254 317 581
503 201 478 740
520 555 400 237
273 555 659 497
Comments
Chip 6
# stability check
285
592
403
467 consistency check
This document is an iRoC Technologies document © copyright 2004 – The information it contains may change without notice.
iRoC Technologies Confidentiality level – Release date: Apr-04
101
THE CHIP PROTECTOR
A.3
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
Alpha
AX1000
Run #
Device
Particle
1
21
22
31
32
41
42
51
52
AX1000
AX1000
AX1000
AX1000
AX1000
AX1000
AX1000
AX1000
AX1000
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
Run #
1
21
22
31
32
41
42
51
52
Fluence (α/cm²)
Chip 1 Chip 2
0.0E+00 0.0E+00
1.4E+08
1.4E+08
1.4E+08
1.4E+08
1.4E+08
1.4E+08
1.4E+08
1.4E+08
Start
Date
9-Apr
9-Apr
12-Apr
10-Apr
13-Apr
10-Apr
14-Apr
11-Apr
14-Apr
Time
10:22:02
10:50:02
19:45:04
2:53:03
11:48:04
18:56:03
3:51:04
10:59:03
19:54:05
Stop
Date
9-Apr
10-Apr
13-Apr
10-Apr
14-Apr
11-Apr
14-Apr
12-Apr
15-Apr
Number of
FIT SEFI
SEFI
Chip 1 Chip 2 Chip 1 Chip 2
0
0
#
#
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Time
10:34:02
2:50:01
11:45:03
18:53:02
3:48:03
10:56:02
19:51:03
2:59:03
11:54:04
Condition
Cycle VDD Temp
200ns 1.4 25°C
200ns 1.4 25°C
200ns 1.4 25°C
200ns 1.5 25°C
200ns 1.5 25°C
200ns 1.6 25°C
200ns 1.6 25°C
200ns 1.4 25°C
200ns 1.4 25°C
Comments
stability check
consistency check
consistency check
APA1000
Run #
Device
21
22
APA1000
APA1000
Run #
21
22
Particle
Date
α−Am241 27-Apr
α−Am241 30-Apr
Start
Time
17:00:00
17:00:00
Stop
Date
30-Apr
3-May
Time
9:00:00
9:00:00
Condition
Cycle VDD Temp
n/a
n/a
n/a
n/a
n/a
n/a
Number of
FIT SEFI
SEFI
Comments
Chip 1 Chip 2 Chip 1 Chip 2 Chip 1 Chip 2
5.7E+08
0
0
#
5.7E+08
0
#
0
Fluence (α/cm²)
This document is an iRoC Technologies document © copyright 2004 – The information it contains may change without notice.
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102
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
THE CHIP PROTECTOR
XC2V3000
Run #
Device
Particle
1
21
22
31
32
41
42
51
52
XC2V3000
XC2V3000
XC2V3000
XC2V3000
XC2V3000
XC2V3000
XC2V3000
XC2V3000
XC2V3000
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
Run #
1
21
22
31
32
41
42
51
52
Start
Date
8-Oct
8-Oct
9-Oct
8-Oct
10-Oct
9-Oct
10-Oct
9-Oct
10-Oct
Fluence SEU
Number of SEU
(α/cm²)
Chip 1 Chip 2 Chip 1 Chip 2
0.0E+00 0.0E+00
0
0
2.3E+05
230
2.3E+05
250
2.3E+05
233
2.3E+05
218
2.3E+05
222
2.3E+05
227
2.3E+05
251
2.3E+05
251
Stop
Time
12:02:15
19:16:10
11:46:14
22:19:11
12:11:21
1:22:11
15:14:22
4:25:12
18:17:23
Date
8-Oct
8-Oct
9-Oct
9-Oct
10-Oct
9-Oct
10-Oct
9-Oct
10-Oct
Time
14:31:15
22:17:06
14:47:10
1:20:07
15:12:17
4:23:07
18:15:18
7:26:08
21:18:20
Condition
Cycle VDD Temp
200ns 1.43 25°C
200ns 1.43 25°C
200ns 1.43 25°C
200ns 1.50 25°C
200ns 1.50 25°C
200ns 1.58 25°C
200ns 1.58 25°C
200ns 1.43 25°C
200ns 1.43 25°C
FIT SEU
Comments
Chip 1 Chip 2
#
# stability check
1015
#
#
1103
1028
#
#
962
980
#
#
1002
1108
# consistency check
#
1108 consistency check
This document is an iRoC Technologies document © copyright 2004 – The information it contains may change without notice.
iRoC Technologies Confidentiality level – Release date: Apr-04
103
THE CHIP PROTECTOR
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
XC3S1000
Run #
Device
Particle
1
24
25
26
34
35
36
44
45
46
54
55
56
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
XC3S1000
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
Run #
1
24
25
26
34
35
36
44
45
46
54
55
56
Start
Date
9-Apr
9-Apr
10-Apr
11-Apr
9-Apr
10-Apr
11-Apr
10-Apr
11-Apr
12-Apr
10-Apr
11-Apr
12-Apr
Time
11:28:01
12:13:02
12:30:02
12:55:03
18:16:02
18:33:02
18:58:02
0:19:02
0:36:03
1:01:03
6:22:02
6:39:02
7:04:03
Stop
Date
9-Apr
9-Apr
10-Apr
11-Apr
10-Apr
11-Apr
12-Apr
10-Apr
11-Apr
12-Apr
10-Apr
11-Apr
12-Apr
Time
11:38:02
18:13:01
18:30:02
18:55:03
0:16:02
0:33:02
0:58:02
6:19:01
6:36:02
7:01:02
12:22:02
12:39:02
13:04:02
Condition
Cycle VDD Temp
200ns 1.14 25°C
200ns 1.14 25°C
200ns 1.14 25°C
200ns 1.14 25°C
200ns 1.20 25°C
200ns 1.20 25°C
200ns 1.20 25°C
200ns 1.26 25°C
200ns 1.26 25°C
200ns 1.26 25°C
200ns 1.14 25°C
200ns 1.14 25°C
200ns 1.14 25°C
Number of SEFI
FIT SEFI
Fluence SEFI (α/cm²)
Comments
Chip 1 Chip 2 Chip 3 Chip 1 Chip 2 Chip 3 Chip 1 Chip 2 Chip 3
0.0E+00 0.0E+00 0.0E+00
0
0
0
#
#
#
stability check
0.0E+00
131
307
#
#
0.0E+00
112
#
262
#
0.0E+00
119
#
#
279
0.0E+00
112
262
#
#
0.0E+00
97
#
226
#
0.0E+00
96
#
#
320
0.0E+00
111
259
#
#
0.0E+00
98
#
229
#
0.0E+00
107
#
#
250
0.0E+00
104
243
#
#
consistency check
0.0E+00
114
#
266
#
consistency check
0.0E+00
114
#
#
266 consistency check
This document is an iRoC Technologies document © copyright 2004 – The information it contains may change without notice.
iRoC Technologies Confidentiality level – Release date: Apr-04
104
THE CHIP PROTECTOR
Run #
1
24
25
26
34
35
36
44
45
46
54
55
56
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
Fluence SEU (α/cm²)
Number of SEU
FIT SEU
Chip 1 Chip 2 Chip 3 Chip 1 Chip 2 Chip 3 Chip 1 Chip 2
0.0E+00 0.0E+00 0.0E+00
0
0
0
#
#
4.3E+05
712
#
307
4.3E+05
#
775
335
4.3E+05
#
#
629
4.3E+05
618
#
267
4.3E+05
#
708
307
3.0E+05
#
#
445
4.3E+05
594
#
257
4.3E+05
#
690
299
4.3E+05
#
#
597
4.3E+05
647
#
280
4.3E+05
#
853
369
4.3E+05
#
#
650
Comments
Chip 3
#
stability check
#
#
1457
#
#
1468
#
#
1380
#
consistency check
#
consistency check
1503 consistency check
EP1C20
Run #
Device
Particle
1
21
22
31
32
41
42
51
52
EP1C20
EP1C20
EP1C20
EP1C20
EP1C20
EP1C20
EP1C20
EP1C20
EP1C20
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
α−Am241
Run #
1
21
22
31
32
41
42
51
52
Start
Date
13-Oct
13-Oct
14-Oct
13-Oct
14-Oct
14-Oct
15-Oct
14-Oct
15-Oct
Time
14:53:38
16:11:06
17:01:12
22:04:07
23:04:14
4:07:08
5:07:16
10:10:11
11:10:18
Stop
Date
13-Oct
13-Oct
14-Oct
14-Oct
15-Oct
14-Oct
15-Oct
14-Oct
15-Oct
Fluence SEFI
Number of SEFI
FIT SEFI
(α/cm²)
Chip 1 Chip 2 Chip 1 Chip 2 Chip 1 Chip 2
0.0E+00 0.0E+00
0
0
#
#
4.4E+05
53
121
#
4.5E+05
56
#
124
4.5E+05
38
84
#
4.5E+05
47
#
104
4.5E+05
24
53
#
4.5E+05
31
#
69
4.5E+05
54
120
#
4.5E+05
56
#
124
Time
15:04:27
22:01:04
23:01:10
4:04:06
5:04:12
10:07:07
11:07:14
16:10:09
17:10:15
Condition
Cycle VDD Temp
200ns 1.425 25°C
200ns 1.425 25°C
200ns 1.425 25°C
200ns 1.500 25°C
200ns 1.500 25°C
200ns 1.575 25°C
200ns 1.575 25°C
200ns 1.425 25°C
200ns 1.425 25°C
Comments
stability check
consistency check
consistency check
This document is an iRoC Technologies document © copyright 2004 – The information it contains may change without notice.
iRoC Technologies Confidentiality level – Release date: Apr-04
105
THE CHIP PROTECTOR
GRE_2_ACTEL_SERTEST_DEC_03_ENG_TR_008
Radiation Results of the SER Test of Actel, Xilinx and
Altera FPGA instances
B 95% confidence intervals
Let x be a single observation from a Poisson distribution with mean µ. Then 95% confidence limits for µ
are given by the formula:
( CHIINV(0.975, 2*x))/2, CHIINV(0.025, 2*(x+1))/2 )
Where CHIINV returns the inverse of the one-tailed probability of the chi-squared distribution.
x
0
1
2
3
4
5
6
7
8
9
10
20
50
100
95% limits
Lower limit Upper limit
0.0
3.7
0.0
5.6
0.2
7.2
0.6
8.8
1.1
10.2
1.6
11.7
2.2
13.1
2.8
14.4
3.5
15.8
4.1
17.1
4.8
18.4
12.2
30.9
37.1
65.9
81.4
121.6
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D.1
AX1000
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