TS61001 Full-bridge FET Driver TRIUNE PRODUCTS Features Description • The TS61001 is a high-voltage FET driver that can be used to drive N-channel devices in full or half bridge configurations. The TS61001 can support various power converter applications, multiple standard and proprietary wireless power applications, and motor driver systems. • • • • • Supports Qi®, PMA, A4WP and proprietary wireless power applications Power outputs scalable based on FET size Support for half and full-bridge power sections Integrated comparator Low external component count Available in 28 pin 5x5 QFN Specifications Applications • • • Multi-standard compliant and non-compliant wireless chargers for: Cell Phones and Smartphones GPS Devices Digital Cameras Tablets and eReaders Portable Lighting Full and half-bridge power converters Motor drive applications • • • • • • • • • • • • Drives both low side and high side N-channel MOSFETS 6Ω pull-up, 2Ω pull-down gate drivers Independent TTL compatible inputs Floating gate drive and bootstrap circuits for driving high side devices – up to 85V for the bootstrap supply voltage 5 - 12V gate drive capability allows compatibility with a wide range of FETs Fast propagation delays (<50nS typical) Matched channel to channel delays (<25nS mismatch) Fast rise and fall times Optional break before make detection to set minimum dead time protection Available comparator, amplifier and 3.3V linear regulator (10mA capability) for supporting circuitry Under voltage lock out protection Over temperature shut down (TSD) protection Typical Application Circuit TS61001 Final Datasheet March 19, 2015 Rev 1.2 www.semtech.com 1 of 10 Semtech Proprietary & Confidential Pinout (Top View) TS61001 Final Datasheet March 19, 2015 Rev 1.2 www.semtech.com 2 of 10 Semtech Proprietary & Confidential Pin Description Pin # Pin Name Pin Function Description 1 VS1 FET drive High side MOSFET source #1 2 HO1 FET drive High side MOSFET gate drive #1 3 LO1 FET drive Low side MOSFET gate drive #1 4 VCCG Input power Input power supply (gate drive supply) 5 PGND Power GND Power GND 6 LO2 FET drive Low side MOSFET gate drive #2 7 HO2 FET drive High side MOSFET gate drive #2 8 VS2 FET drive High side MOSFET source #2 9 VB2 Bootstrap Bootstrap for gate drive #2 10 LS1ON PWM1_L Low-side gate control #1 11 HS1ON PWM1_H High-side gate control #1 12 LS2ON PWM2_L Low-side gate control #2 13 AGND Analog GND Analog GND 14 V5INT Decoupling Internal 5V regulator decoupling 15 SDATA I2C Data I2C data 16 SCLK I2C Clock I2C clock 17 V3P3 Decoupling Internal 3.3V regulator decoupling 18 HS2ON PWM2_H High-side gate control #2 19 COMPOUT Comparator Comparator output 20 COMPN Comparator Comparator input (-) 21 COMPP Comparator Comparator input (+) 22 PGND Power GND Power GND 23 NC No Connect No Connect 24 PGND Power GND Power GND 25 VCC Input power Input power supply (main device supply) 26 /SLEEP Disable Disable Pin (active low) 27 NC No Connect No Connect 28 VB1 Bootstrap Bootstrap for gate drive #1 TS61001 Final Datasheet March 19, 2015 Rev 1.2 www.semtech.com 3 of 10 Semtech Proprietary & Confidential Functional Block Diagram TS61001 Final Datasheet March 19, 2015 Rev 1.2 www.semtech.com 4 of 10 Semtech Proprietary & Confidential Absolute Maximum Rating Over operating free–air temperature range unless otherwise noted(1, 2) Parameter Value VCCG, VCC Unit 13.2 V 13.2 (relative to VS1, VS2) V SDATA, SCLK 3.6 V LS1ON, LS2ON, HS1ON, HS2ON 3.6 V COMPN, COMPP, COMPOUT 3.6 V Electrostatic Discharge – Human Body Model +/-2k V Electrostatic Discharge – Charge Device Model +/-500 V 260 °C VB1, VB2 Lead Temperature (soldering, 10 seconds) Notes: (1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability. (2) All voltage values are with respect to network ground terminal. Thermal Characteristics Symbol Parameter Value Units ΘJA Thermal Resistance Junction to Air (Note 1) 34.5 °C/W ΘJC Thermal Resistance Junction to Case (Note 1) 2.5 °C/W TSTG Storage Temperature Range -65 to 150 °C Maximum Junction Temperature 150 °C Operating Junction Temperature Range -40 to 125 °C TJ MAX TJ Note 1: Assumes 16LD 3x3 QFN with hi-K JEDEC board and 13.5 inch2 of 1 oz Cu and 4 thermal vias connected to PAD Recommended Operating Conditions Symbol VCCG / VCC Parameter Min Input Operating Voltage 5 Rev 1.2 8 12.5 V 10 uF Internal 3.3V Bypass Capacitor 4.7 uF Internal 5V Bypass Capacitor 100 nF Bootstrap Capacitor 47 nF C3P3BYP TS61001 Final Datasheet March 19, 2015 Unit nF VCCG / VCC Bypass Capacitors CBST Max 100 CVCCBYP CV5INTBYP Typ www.semtech.com 5 of 10 Semtech Proprietary & Confidential Electrical Characteristics Electrical Characteristics, TJ = -40C to 125C, VCC = 12V (unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit 5 8 12.5 V 0.5 1.5 3 mA VCC Supply Voltage VCCG / VCC Input Supply Voltage Iq Input Supply current /SLEEP = Hi; No loads; Gate drivers off Iq Input Supply current /SLEEP = Hi; Gate driver Fs = 200KHz (no load) 4 5 mA Iqq_sleep Stand by current /SLEEP = 0V; Inputs driven Low 3 10 uA Ron (pulldown) HS,LS pull down device VCCG/VCC = 12V 1.4 2 Ω Ron (pullup) HS, LS pull up device VCCG/VCC = 12V 4.0 6.5 Ω Ron Characteristics Under Voltage Lock Out UVLO (rise) UV threshold (VCCG) Rising threshold measurement 4.1 4.35 4.5 V UVLO (fall) UV threshold (VCCG) Falling threshold measurement 3.8 4 4.3 V UVLO (hyst) UV hysteresis (VCCG) Hysteresis 0.15 0.25 V UVLO (rise) UV threshold (VCC) Rising threshold measurement 4.1 4.35 4.5 V UVLO (fall) UV threshold (VCC) Falling threshold measurement 3.8 4 4.3 V UVLO (hyst) UV hysteresis (VCC) Hysteresis 0.15 0.25 V 1.5 2.2 V Input Pins VIH & VIL VIH Digital Input Pins Gate driver inputs, I2C VIL Digital Input Pins Gate driver inputs, I2C 0.8 1.3 V Hyst Digital Input Pins Gate driver inputs, I2C 0.1 0.2 V Propagation Delays & Rise/Fall times TPLShl Prop delay (LS) high to low LSxON to LO1 (11V) 15 50 nS TPLSlh Prop delay (LS) low to high LSxON to LO1(1V) 15 50 nS TPHShl Prop delay (HS) high to low HSxON to HOx (HOx – VSx = 10V) 25 50 nS TPHSlh Prop delay (HS) low to high HSxON to HOx (HOx – VSx = 1V) 25 50 nS TPMMlshs Prop delay mismatch (ls to hs) LS off to HS on mismatch 10 40 nS TPMMhsls Prop delay mismatch (hs to ls) HS off to LS on mismatch 10 40 nS Minimum pulse width response 80 TPWmin nS Tr Rise time (HS/LS) 1nF load; 20 – 80% 20 nS Tp Fall time (HS/LS) 1nF load; 80 – 20% 20 nS 3.45 V V3P3 Regulator Vout Nominal Output voltage Iout External loading Output Current capability 3.15 3.3 10 15 0 mA Comparator Voffset Comparator Offset -10 VCMin Input Common Mode Range 0.2 Tcomp Comparator detection time TS61001 Final Datasheet March 19, 2015 Rev 1.2 Input signal of 10mV www.semtech.com 40 10 mV 1.8 V 80 nS 6 of 10 Semtech Proprietary & Confidential Application Schematic Figure 1: TS61001 Application Schematic TS61001 Final Datasheet March 19, 2015 Rev 1.2 www.semtech.com 7 of 10 Semtech Proprietary & Confidential Package Dimensions TS61001 Final Datasheet March 19, 2015 Rev 1.2 www.semtech.com 8 of 10 Semtech Proprietary & Confidential Ordering Information Part Number Description TS61001-QFNR Full-bridge FET Driver RoHS and Reach Compliance Triune Systems is fully committed to environmental quality. All Triune Systems materials and suppliers are fully compliant with RoHS (European Union Directive 2011/65/EU), REACH SVHC Chemical Restrictions (EC 1907/2006), IPC-1752 Level 3 materials declarations, and their subsequent amendments. Triune Systems maintains certified laboratory reports for all product materials, from all suppliers, which show full compliance to restrictions on the following: • • • • • • • • • • • • Cadmium (Cd) Chlorofluorocarbons (CFCs) Chlorinate Hydrocarbons (CHCs) Halons (Halogen free) Hexavalent Chromium (CrVI) Hydrobromofluorocarbons (HBFCs) Hydrochlorofluorocarbons (HCFCs) Lead (Pb) Mercury (Hg) Perfluorocarbons (PFCs) Polybrominated biphenyls (PBB) Polybrominated Diphenyl Ethers (PBDEs) TS61001 Final Datasheet March 19, 2015 Rev 1.2 www.semtech.com 9 of 10 Semtech Proprietary & Confidential IMPORTANT NOTICE Information relating to this product and the application or design described herein is believed to be reliable, however such information is provided as a guide only and Semtech assumes no liability for any errors in this document, or for the application or design described herein. Semtech reserves the right to make changes to the product or this document at any time without notice. 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All rights reserved. © Semtech 2015 Contact Information Semtech Corporation 200 Flynn Road, Camarillo, CA 93012 Phone: (805) 498-2111, Fax: (805) 498-3804 www.semtech.com TS61001 Final Datasheet March 19, 2015 Rev 1.2 10 of 10 Semtech Proprietary & Confidential