R6012FNJ Nch 600V 12A Power MOSFET Datasheet lOutline VDSS 600V RDS(on) (Max.) 0.51W ID 12A PD 50W (2) LPT(S) (SC-83) TO-263(D2PAK) (1) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. *1 BODY DIODE 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging lApplication Taping Reel size (mm) 330 Tape width (mm) 24 Type Basic ordering unit (pcs) Switching Power Supply Taping code 1,000 TL Marking R6012FNJ lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit VDSS 600 V Tc = 25°C ID *1 12 A Tc = 100°C ID *1 6 A 48 A Drain - Source voltage Continuous drain current Pulsed drain current ID,pulse *2 Gate - Source voltage VGSS 30 V Avalanche energy, single pulse EAS *3 9.6 mJ Avalanche energy, repetitive EAR *4 3.5 mJ Avalanche current IAR *3 6 A Power dissipation (Tc = 25°C) PD 50 W Junction temperature Tj 150 °C Tstg -55 to +150 °C dv/dt *5 15 V/ns Range of storage temperature Reverse diode dv/dt www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/13 2013.04 - Rev.A Data Sheet R6012FNJ lAbsolute maximum ratings Parameter Symbol Conditions Values Unit 50 V/ns VDS = 480V, ID = 12A Drain - Source voltage slope dv/dt Tj = 125°C lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - - 2.5 °C/W Thermal resistance, junction - ambient RthJA - - 80 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C lElectrical characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. 600 - - V - 700 - V Tj = 25°C - 1 100 Tj = 125°C - - 100 mA IGSS VGS = 30V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 1mA 3 - 5 V - 0.39 0.51 W Tj = 125°C - 0.79 - f = 1MHz, open drain - 8 - Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Drain - Source avalanche breakdown voltage V(BR)DS VGS = 0V, ID = 6A VDS = 600V, VGS = 0V Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage IDSS mA VGS = 10V, ID = 6A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. RDS(on) *6 Tj = 25°C RG 2/13 W 2013.04 - Rev.A Data Sheet R6012FNJ lElectrical characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. 3.5 8 - Transconductance gfs *6 VDS = 10V, ID = 6.0A Input capacitance Ciss VGS = 0V - 1300 - Output capacitance Coss VDS = 25V - 890 - Reverse transfer capacitance Crss f = 1MHz - 45 - Effective output capacitance, energy related Co(er) - 41.9 - Effective output capacitance, time related Turn - on delay time VGS = 0V VDS = 0V to 480V Co(tr) 142 - VDD ⋍ 300V, VGS = 10V - 30 - ID = 6A - 37 - td(off) *6 RL = 50W - 77 154 tf *6 RG = 10W - 20 40 tr *6 Rise time Turn - off delay time Fall time pF pF - td(on) *6 S ns lGate Charge characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *6 VDD ⋍ 300V - 35 - Gate - Source charge Qgs *6 ID = 12A - 10 - Gate - Drain charge Qgd *6 VGS = 10V - 15 - Gate plateau voltage V(plateau) VDD ⋍ 300V, ID = 12A - 6.6 - nC V *1 Limited only by maximum temperature allowed. *2 PW 10ms, Duty cycle 1% *3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C *4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Pulsed www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 3/13 2013.04 - Rev.A Data Sheet R6012FNJ lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Values Parameter Symbol Inverse diode continuous, forward current Conditions Unit IS *1 Min. Typ. Max. - - 12 A - - 48 A - - 1.5 V - 75 - ns - 0.26 - mC - 6.9 - A - 740 - A/ms Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *6 VGS = 0V, IS = 12A trr *6 Reverse recovery time Reverse recovery charge Qrr *6 Peak reverse recovery current Irrm *6 Peak rate of fall of reverse recovery current dirr/dt IS = 12A di/dt = 100A/ms Tj = 25°C lTypical Transient Thermal Characteristics Symbol Value Rth1 0.0726 Rth2 0.251 Rth3 0.634 www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Unit K/W 4/13 Symbol Value Unit Cth1 0.0228 Cth2 0.00767 Cth3 0.167 Ws/K 2013.04 - Rev.A Data Sheet R6012FNJ lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 PW = 100ms 100 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] 120 80 60 40 PW = 1ms 1 PW = 10ms Operation in this area is limited by RDS(on) (VGS = 10V) 0.1 20 Ta=25ºC Single Pulse 0.01 0 0 50 100 150 0.1 200 1 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Normalized Transient Thermal Resistance : r(t) 10 Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 1000 100 10 Ta = 25ºC Single Pulse Rth(ch-a)(t) = ｒ(t)×Rth(ch-a) Rth(ch-a) = 80ºC/W 1 0.1 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 0.001 0.0001 0.0001 0.01 1 100 Pulse Width : PW [s] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 5/13 2013.04 - Rev.A Data Sheet R6012FNJ lElectrical characteristic curves Fig.5 Avalanche Power Losses Fig.4 Avalanche Current vs Inductive Load 8 Avalanche Power Losses : PAR [W] 5000 Avalanche Current : IAR [A] 7 6 5 4 3 2 Ta = 25ºC VDD = 50V, RG = 25W VGF = 10V, VGR = 0V 1 0 0.01 0.1 1 10 4500 Ta=25ºC 4000 3500 3000 2500 2000 1500 1000 500 0 1.0E+04 100 Coil Inductance : L [mH] 1.0E+05 1.0E+06 Frequency : f [Hz] Fig.6 Avalanche Energy Derating Curve vs Junction Temperature Avalanche Energy : EAS / EAS max. [%] 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [ºC] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 6/13 2013.04 - Rev.A Data Sheet R6012FNJ lElectrical characteristic curves Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II) 20 3 VGS= 10.0V 15 Ta=25ºC Pulsed 10 VGS= 6.5V VGS= 6.0V 5 2 1.5 VGS= 5.5V 1 0.5 VGS= 5.5V VGS= 5.0V VGS= 5.0V 0 0 0 10 20 30 40 0 50 Drain - Source Voltage : VDS [V] 2 3 6 6 VGS= 6.0V 4 VGS= 5.5V 2 VGS= 4.5V VGS= 8.0V 5 VGS= 6.5V 8 5 VGS= 10.0V Ta=150ºC Pulsed Ta=150ºC Pulsed Drain Current : ID [A] 10 4 Fig.10 Tj = 150°C Typical Output Characteristics(II) 12 Drain Current : ID [A] 1 Drain - Source Voltage : VDS [V] Fig.9 Tj = 150°C Typical Output Characteristics(I) VGS= 10.0V VGS= 8.0V VGS= 7.0V Ta=25ºC Pulsed VGS= 10.0V VGS= 8.0V VGS= 7.0V VGS= 6.5V VGS= 6.0V 2.5 VGS= 7.0V Drain Current : ID [A] Drain Current : ID [A] VGS= 8.0V VGS= 7.0V VGS= 6.5V 4 VGS= 6.0V 3 VGS= 5.5V 2 1 VGS= 5.0V VGS= 4.5V VGS= 5.0V 0 0 0 10 20 30 40 0 50 Drain - Source Voltage : VDS [V] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1 2 3 4 5 Drain - Source Voltage : VDS [V] 7/13 2013.04 - Rev.A Data Sheet R6012FNJ Fig.11 Breakdown Voltage vs. Junction Temperature Fig.12 Typical Transfer Characteristics 900 100 VDS= 10V Pulsed 850 10 800 Drain Current : ID [A] Drain - Source Breakdown Voltage : V(BR)DSS [V] lElectrical characteristic curves 750 700 650 600 1 0.1 Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 0.01 550 500 0.001 -50 -25 0 25 50 75 100 125 150 0.0 Junction Temperature : Tj [°C] 4.0 6.0 8.0 10.0 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature Fig.14 Transconductance vs. Drain Current 100 5 VDS= 10V Pulsed 4 3 VDS= 10V ID= 1mA Pulsed Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 2.0 2 -50 -25 0 25 50 75 1 0.1 0.01 0.001 0.001 100 125 150 Junction Temperature : Tj [°C] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 10 Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.01 0.1 1 10 100 Drain Current : ID [A] 8/13 2013.04 - Rev.A Data Sheet R6012FNJ lElectrical characteristic curves 1 Ta=25ºC Pulsed 0.8 ID = 12A 0.6 ID = 6A 0.4 0.2 0 0 2 4 6 8 Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage 1 VGS= 10V Pulsed 0.8 0.6 ID = 12A ID = 6A 0.4 0.2 0 -50 -25 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] 0 25 50 75 100 125 150 Junction Temperature : Tj [ºC] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current 1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC VGS= 10V Pulsed 0.1 0.01 0.1 1 10 100 Drain Current : ID [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 9/13 2013.04 - Rev.A Data Sheet R6012FNJ lElectrical characteristic curves Fig.19 Coss Stored Energy Fig.18 Typical Capacitance vs. Drain - Source Voltage 10000 14 Coss Stored Energy : EOSS [uJ] Capacitance : C [pF] Ta=25ºC 1000 Ciss 100 Coss 10 Ta=25ºC f = 1MHz VGS = 0V 12 10 8 6 4 2 Crss 0 1 0.01 0.1 1 10 100 0 1000 Drain - Source Voltage : VDS [V] 200 400 600 Drain - Source Voltage : VDS [V] Fig.20 Switching Characteristics Fig.21 Dynamic Input Characteristics 10000 12 Switching Time : t [ns] tf 1000 Gate - Source Voltage : VGS [V] VDD ≒ 300V VGS = 10V RG= 10W Ta = 25ºC Pulsed td(off) 100 td(on) 10 tr 1 10 8 6 4 Ta=25ºC VDD= 300V ID= 12A Pulsed 2 0 0.01 0.1 1 10 100 0 10 15 20 25 30 35 40 45 50 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 5 10/13 2013.04 - Rev.A Data Sheet R6012FNJ lElectrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 100 VGS=0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 100 10 1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.1 0.01 Ta=25ºC VGS = 0V di / dt = 100A / ms Pulsed 10 0.0 0.5 1.0 1.5 0 Source - Drain Voltage : VSD [V] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1 10 100 Inverse Diode Forward Current : IS [A] 11/13 2013.04 - Rev.A Data Sheet R6012FNJ lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 12/13 2013.04 - Rev.A Data Sheet R6012FNJ lDimensions (Unit : mm) D A2 A B L2 c1 E L3 LPTS H A1 L4 Lp b2 e b x L1 L b3 c A3 B A l3 l1 e b6 b5 l2 Pattern of terminal position areas [Not a recommended pattern of soldering DIM A1 A2 A3 b b2 b3 c c1 D E e HE L L1 L2 L3 L4 Lp x DIM b5 b6 l1 l2 l3 MILIMETERS MIN MAX 0.00 4.30 0.68 1.14 0.30 1.10 9.80 8.80 12.80 2.70 0.90 0.90 - 0.25 8.90 2.54 1.10 7.25 1.00 MIN 0.30 4.70 0.000 0.169 0.98 0.027 1.44 0.60 1.50 10.40 9.20 0.045 0.012 0.043 0.386 0.346 13.40 3.30 1.50 0.504 0.106 0.035 1.50 0.25 0.035 - MILIMETERS MIN MAX MIN - 1.23 10.40 2.10 7.55 13.40 - INCHES MAX 0.012 0.185 0.010 0.350 0.100 0.043 0.285 0.039 INCHES 0.039 0.057 0.024 0.059 0.409 0.362 0.528 0.130 0.059 0.059 0.010 MAX 0.049 0.409 0.083 0.297 0.528 Dimension in mm / inches www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 13/13 2013.04 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. R1102A