Datasheet Download

R6025FNZ
Nch 600V 25A Power MOSFET
Datasheet
lOutline
VDSS
600V
RDS(on) (Max.)
0.18W
ID
25A
PD
150W
TO-3PF
(1) (2)
lFeatures
(3)
lInner circuit
1) Low on-resistance.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
(1) Gate
(2) Drain
(3) Source
4) Drive circuits can be simple.
*1 BODY DIODE
2) Fast switching speed.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
lApplication
Type
Switching Power Supply
Tube
Reel size (mm)
-
Tape width (mm)
-
Basic ordering unit (pcs)
360
Taping code
C8
Marking
R6025FNZ
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
VDSS
600
V
Tc = 25°C
ID *1
25
A
Tc = 100°C
ID *1
12
A
100
A
Drain - Source voltage
Continuous drain current
Pulsed drain current
ID,pulse
*2
Gate - Source voltage
VGSS
30
V
Avalanche energy, single pulse
EAS *3
42.1
mJ
Avalanche energy, repetitive
EAR *4
9.7
mJ
Avalanche current
IAR *3
12.5
A
Power dissipation (Tc = 25°C)
PD
150
W
Junction temperature
Tj
150
°C
Tstg
-55 to +150
°C
dv/dt *5
15
V/ns
Range of storage temperature
Reverse diode dv/dt
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© 2013 ROHM Co., Ltd. All rights reserved.
1/13
2013.05 - Rev.A
Data Sheet
R6025FNZ
lAbsolute maximum ratings
Parameter
Symbol
Drain - Source voltage slope
dv/dt
Conditions
VDS = 480V, ID = 25A
Tj = 125C
Values
Unit
50
V/ns
lThermal resistance
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Thermal resistance, junction - case
RthJC
-
-
0.83
°C/W
Thermal resistance, junction - ambient
RthJA
-
-
40
°C/W
Soldering temperature, wavesoldering for 10s
Tsold
-
-
265
°C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Unit
Drain - Source breakdown
voltage
V(BR)DSS
VGS = 0V, ID = 1mA
600
-
-
V
Drain - Source avalanche
breakdown voltage
V(BR)DS
VGS = 0V, ID = 12.5A
-
700
-
V
Tj = 25°C
-
0.1
100
Tj = 125°C
-
-
100
mA
IGSS
VGS = 30V, VDS = 0V
-
-
100
nA
VGS (th)
VDS = 10V, ID = 1mA
3
-
5
V
-
0.14
0.18
W
Tj = 125°C
-
0.28
-
f = 1MHz, open drain
-
3.3
-
VDS = 600V, VGS = 0V
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
IDSS
mA
VGS = 10V, ID = 12.5A
Static drain - source
on - state resistance
Gate input resistance
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RDS(on) *6 Tj = 25°C
RG
2/13
W
2013.05 - Rev.A
Data Sheet
R6025FNZ
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Transconductance
gfs *6
VDS = 10V, ID = 12.5A
9
18
-
Input capacitance
Ciss
VGS = 0V
-
3500
-
Output capacitance
Coss
VDS = 25V
-
2200
-
Reverse transfer capacitance
Crss
f = 1MHz
-
45
-
Effective output capacitance,
energy related
Co(er)
-
111
-
Effective output capacitance,
time related
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Co(tr)
VGS = 0V
VDS = 0V ~ 480V
S
pF
pF
-
364
-
VDD ⋍ 300V, VGS = 10V
-
57
-
tr *6
ID = 12.5A
-
115
-
td(off) *6
RL = 24W
-
150
300
tf *6
RG = 10W
-
72
144
td(on) *6
Unit
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Total gate charge
Qg *6
VDD ⋍ 300V
-
85
-
Gate - Source charge
Qgs *6
ID = 25A
-
25
-
Gate - Drain charge
Qgd *6
VGS = 10V
-
35
-
Gate plateau voltage
V(plateau)
VDD ⋍ 300V, ID = 25A
-
7.1
-
Unit
nC
V
*1 Limited only by maximum temperature allowed.
*2 PW  10ms, Duty cycle  1%
*3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C
*4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
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3/13
2013.05 - Rev.A
Data Sheet
R6025FNZ
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Inverse diode continuous,
forward current
Values
Conditions
IS *1
Unit
Min.
Typ.
Max.
-
-
25
A
-
-
100
A
-
-
1.5
V
-
120
-
ns
-
0.53
-
mC
-
9
-
A
-
1150
-
A/ms
Tc = 25°C
Inverse diode direct current,
pulsed
ISM *2
Forward voltage
VSD *6
Reverse recovery time
trr *6
Reverse recovery charge
Qrr *6
Peak reverse recovery current
Irrm *6
Peak rate of fall of reverse
recovery current
dirr/dt
VGS = 0V, IS = 25A
IS = 25A
di/dt = 100A/ms
Tj = 25°C
lTypical Transient Thermal Characteristics
Symbol
Value
Rth1
0.0564
Rth2
0.391
Rth3
1.26
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Unit
K/W
4/13
Symbol
Value
Cth1
0.0077
Cth2
0.0779
Cth3
1.13
Unit
Ws/K
2013.05 - Rev.A
Data Sheet
R6025FNZ
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
1000
PW = 100ms
100
100
Drain Current : ID [A]
Power Dissipation : PD/PD max. [%]
120
80
60
40
0
50
100
150
1
0.01
200
Operation in this area
is limited by RDS(on)
(VGS = 10V)
PW = 10ms
Ta=25ºC
Single Pulse
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
Normalized Transient Thermal Resistance : r(t)
10
0.1
20
0
PW = 1ms
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 40ºC/W
1
0.1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.01
0.001
0.0001
0.0001 0.001 0.01
0.1
1
10
100 1000
Pulse Width : PW [s]
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5/13
2013.05 - Rev.A
Data Sheet
R6025FNZ
lElectrical characteristic curves
Fig.5 Avalanche Power Losses
Fig.4 Avalanche Current vs Inductive Load
16
14000
Avalanche Power Losses : PAR [W]
Avalanche Current : IAR [A]
14
12
10
8
6
4
Ta = 25ºC
VDD = 50V, RG = 25W
VGF = 10V, VGR = 0V
2
0
0.01
0.1
1
10
12000
Ta=25ºC
10000
8000
6000
4000
2000
0
1.0E+04
100
Coil Inductance : L [mH]
1.0E+05
1.0E+06
Frequency : f [Hz]
Avalanche Energy : EAS / EAS max. [%]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
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6/13
2013.05 - Rev.A
Data Sheet
R6025FNZ
lElectrical characteristic curves
Fig.7 Typical Output Characteristics(I)
25
25
VGS= 10.0V
VGS= 8.0V
Ta=25ºC
Pulsed
Ta=25ºC V = 10.0V
GS
Pulsed
VGS= 7.0V
20
Drain Current : ID [A]
20
Drain Current : ID [A]
Fig.8 Typical Output Characteristics(II)
VGS= 6.5V
15
10
VGS= 6.0V
5
0
VGS= 8.0V
15
VGS= 6.5V
10
5
VGS= 5.0V
0
5
0
10 15 20 25 30 35 40 45 50
VGS= 6.0V
0
Drain - Source Voltage : VDS [V]
VGS= 10.0V
VGS= 8.0V
VGS= 7.0V
Drain Current : ID [A]
20
VGS= 6.5V
14
Ta=150ºC
Pulsed
12
VGS= 6.0V
15
10
VGS= 5.5V
5
VGS= 5.0V
10
20
30
40
4
5
VGS= 10.0V
VGS= 8.0V
VGS= 7.0V
VGS= 6.5V
Ta=150ºC
Pulsed
10
VGS= 6.0V
VGS= 5.5V
8
6
VGS= 5.0V
4
0
50
Drain - Source Voltage : VDS [V]
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3
2
VGS= 4.5V
0
2
Fig.10 Tj = 150°C Typical Output
Characteristics(II)
Drain Current : ID [A]
25
1
Drain - Source Voltage : VDS [V]
Fig.9 Tj = 150°C Typical Output
Characteristics(I)
0
VGS= 7.0V
VGS= 4.5V
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
7/13
2013.05 - Rev.A
Data Sheet
R6025FNZ
Fig.11 Breakdown Voltage
vs. Junction Temperature
Fig.12 Typical Transfer Characteristics
100
900
VDS= 10V
Plused
850
10
800
Drain Current : ID [A]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
lElectrical characteristic curves
750
700
650
600
1
0.1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.01
550
500
-50 -25
0
25
50
75
0.001
100 125 150
0
2
Junction Temperature : Tj [°C]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
10
100
VDS= 10V
Plused
VDS= 10V
ID= 1mA
Plused
5
4
3
2
10
1
0.1
1
0
8
Fig.14 Transconductance vs. Drain Current
Transconductance : gfs [S]
Gate Threshold Voltage : VGS(th) [V]
6
6
Gate - Source Voltage : VGS [V]
8
7
4
-50 -25
0
25
50
75
0.01
0.01
100 125 150
Junction Temperature : Tj [°C]
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Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1
1
10
100
Drain Current : ID [A]
8/13
2013.05 - Rev.A
Data Sheet
R6025FNZ
lElectrical characteristic curves
0.5
Ta=25ºC
Pulsed
0.4
ID = 12.5A
ID = 25A
0.3
0.2
0.1
0.0
0
2
4
6
8
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
Fig.15 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
0.4
VGS= 10V
Plused
0.3
ID = 25A
0.2
ID = 12.5A
0.1
0.0
-50 -25
0
25
50
75
100 125 150
Junction Temperature : Tj [ºC]
Static Drain - Source On-State Resistance
: RDS(on) [W]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
10
VGS= 10V
Plused
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
1
0.1
0.01
0.01
0.1
1
10
100
Drain Current : ID [A]
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9/13
2013.05 - Rev.A
Data Sheet
R6025FNZ
lElectrical characteristic curves
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Fig.19 Coss Stored Energy
100000
Coss Stored Energy : EOSS [uJ]
20
Capacitance : C [pF]
10000
Ciss
1000
100
Coss
10
1
Ta=25ºC
f = 1MHz
VGS = 0V
0.01
Crss
0.1
1
10
100
16
14
12
10
8
6
4
2
0
1000
Ta=25ºC
18
0
Drain - Source Voltage : VDS [V]
200
400
600
Drain - Source Voltage : VDS [V]
Fig.21 Dynamic Input Characteristics
10000
10
td(off)
1000
10
1
tf
td(on)
100
VDD ≒ 300V
VGS = 10V
RG= 10W
Ta = 25ºC
Pulsed
Gate - Source Voltage : VGS [V]
Switching Time : t [ns]
Fig.20 Switching Characteristics
tr
0.01
0.1
1
10
6
4
Ta = 25ºC
VDD= 300V
ID= 25A
Pulsed
2
0
100
0
10
20
30
40
50
60
70
80
90
Total Gate Charge : Qg [nC]
Drain Current : ID [A]
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© 2013 ROHM Co., Ltd. All rights reserved.
8
10/13
2013.05 - Rev.A
Data Sheet
R6025FNZ
lElectrical characteristic curves
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
VGS=0V
Pulsed
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS [A]
100
10
1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.1
0.01
0.0
0.5
1.0
Ta=25ºC
VGS = 0V
di / dt = 100A / ms
Pulsed
10
1.5
Source - Drain Voltage : VSD [V]
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© 2013 ROHM Co., Ltd. All rights reserved.
100
0.1
1
10
100
Inverse Diode Forward Current : IS [A]
11/13
2013.05 - Rev.A
Data Sheet
R6025FNZ
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit
Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit
Fig.5-2 di/dt Waveform
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© 2013 ROHM Co., Ltd. All rights reserved.
12/13
2013.05 - Rev.A
Data Sheet
R6025FNZ
lDimensions (Unit : mm)
E
D
TO-3PF
E1
A
A
A1
A2
A4
F
φp
Q
L
b1
x
A
c
b
e
DIM
A
A1
A2
A4
b
b1
c
D
E
e
E1
F
L
p
Q
x
MILIMETERS
MIN
MAX
26.30
26.70
2.30
2.70
26.30
26.70
9.80
10.20
0.65
0.95
1.80
2.20
0.80
1.10
15.30
15.70
5.30
5.70
5.45
2.80
3.20
4.30
4.70
14.60
15.00
3.40
3.80
3.10
3.50
0.50
INCHES
MIN
1.035
0.091
1.035
0.386
0.026
0.071
0.031
0.602
0.209
0.215
0.110
0.169
0.575
0.134
0.122
-
MAX
1.051
0.106
1.051
0.402
0.037
0.087
0.043
0.618
0.224
0.126
0.185
0.591
0.150
0.138
0.020
Dimension in mm / inches
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© 2013 ROHM Co., Ltd. All rights reserved.
13/13
2013.05 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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R1102A
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