R6025FNZ Nch 600V 25A Power MOSFET Datasheet lOutline VDSS 600V RDS(on) (Max.) 0.18W ID 25A PD 150W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple. *1 BODY DIODE 2) Fast switching speed. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging lApplication Type Switching Power Supply Tube Reel size (mm) - Tape width (mm) - Basic ordering unit (pcs) 360 Taping code C8 Marking R6025FNZ lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit VDSS 600 V Tc = 25°C ID *1 25 A Tc = 100°C ID *1 12 A 100 A Drain - Source voltage Continuous drain current Pulsed drain current ID,pulse *2 Gate - Source voltage VGSS 30 V Avalanche energy, single pulse EAS *3 42.1 mJ Avalanche energy, repetitive EAR *4 9.7 mJ Avalanche current IAR *3 12.5 A Power dissipation (Tc = 25°C) PD 150 W Junction temperature Tj 150 °C Tstg -55 to +150 °C dv/dt *5 15 V/ns Range of storage temperature Reverse diode dv/dt www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/13 2013.05 - Rev.A Data Sheet R6025FNZ lAbsolute maximum ratings Parameter Symbol Drain - Source voltage slope dv/dt Conditions VDS = 480V, ID = 25A Tj = 125C Values Unit 50 V/ns lThermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - case RthJC - - 0.83 °C/W Thermal resistance, junction - ambient RthJA - - 40 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 600 - - V Drain - Source avalanche breakdown voltage V(BR)DS VGS = 0V, ID = 12.5A - 700 - V Tj = 25°C - 0.1 100 Tj = 125°C - - 100 mA IGSS VGS = 30V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 1mA 3 - 5 V - 0.14 0.18 W Tj = 125°C - 0.28 - f = 1MHz, open drain - 3.3 - VDS = 600V, VGS = 0V Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage IDSS mA VGS = 10V, ID = 12.5A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. RDS(on) *6 Tj = 25°C RG 2/13 W 2013.05 - Rev.A Data Sheet R6025FNZ lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Transconductance gfs *6 VDS = 10V, ID = 12.5A 9 18 - Input capacitance Ciss VGS = 0V - 3500 - Output capacitance Coss VDS = 25V - 2200 - Reverse transfer capacitance Crss f = 1MHz - 45 - Effective output capacitance, energy related Co(er) - 111 - Effective output capacitance, time related Turn - on delay time Rise time Turn - off delay time Fall time Co(tr) VGS = 0V VDS = 0V ~ 480V S pF pF - 364 - VDD ⋍ 300V, VGS = 10V - 57 - tr *6 ID = 12.5A - 115 - td(off) *6 RL = 24W - 150 300 tf *6 RG = 10W - 72 144 td(on) *6 Unit ns lGate Charge characteristics(Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Total gate charge Qg *6 VDD ⋍ 300V - 85 - Gate - Source charge Qgs *6 ID = 25A - 25 - Gate - Drain charge Qgd *6 VGS = 10V - 35 - Gate plateau voltage V(plateau) VDD ⋍ 300V, ID = 25A - 7.1 - Unit nC V *1 Limited only by maximum temperature allowed. *2 PW 10ms, Duty cycle 1% *3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C *4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Pulsed www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 3/13 2013.05 - Rev.A Data Sheet R6025FNZ lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Parameter Symbol Inverse diode continuous, forward current Values Conditions IS *1 Unit Min. Typ. Max. - - 25 A - - 100 A - - 1.5 V - 120 - ns - 0.53 - mC - 9 - A - 1150 - A/ms Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *6 Reverse recovery time trr *6 Reverse recovery charge Qrr *6 Peak reverse recovery current Irrm *6 Peak rate of fall of reverse recovery current dirr/dt VGS = 0V, IS = 25A IS = 25A di/dt = 100A/ms Tj = 25°C lTypical Transient Thermal Characteristics Symbol Value Rth1 0.0564 Rth2 0.391 Rth3 1.26 www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Unit K/W 4/13 Symbol Value Cth1 0.0077 Cth2 0.0779 Cth3 1.13 Unit Ws/K 2013.05 - Rev.A Data Sheet R6025FNZ lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 1000 PW = 100ms 100 100 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] 120 80 60 40 0 50 100 150 1 0.01 200 Operation in this area is limited by RDS(on) (VGS = 10V) PW = 10ms Ta=25ºC Single Pulse 0.1 1 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Normalized Transient Thermal Resistance : r(t) 10 0.1 20 0 PW = 1ms Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 1000 100 10 Ta = 25ºC Single Pulse Rth(ch-a)(t) = ｒ(t)×Rth(ch-a) Rth(ch-a) = 40ºC/W 1 0.1 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width : PW [s] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 5/13 2013.05 - Rev.A Data Sheet R6025FNZ lElectrical characteristic curves Fig.5 Avalanche Power Losses Fig.4 Avalanche Current vs Inductive Load 16 14000 Avalanche Power Losses : PAR [W] Avalanche Current : IAR [A] 14 12 10 8 6 4 Ta = 25ºC VDD = 50V, RG = 25W VGF = 10V, VGR = 0V 2 0 0.01 0.1 1 10 12000 Ta=25ºC 10000 8000 6000 4000 2000 0 1.0E+04 100 Coil Inductance : L [mH] 1.0E+05 1.0E+06 Frequency : f [Hz] Avalanche Energy : EAS / EAS max. [%] Fig.6 Avalanche Energy Derating Curve vs Junction Temperature 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [ºC] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 6/13 2013.05 - Rev.A Data Sheet R6025FNZ lElectrical characteristic curves Fig.7 Typical Output Characteristics(I) 25 25 VGS= 10.0V VGS= 8.0V Ta=25ºC Pulsed Ta=25ºC V = 10.0V GS Pulsed VGS= 7.0V 20 Drain Current : ID [A] 20 Drain Current : ID [A] Fig.8 Typical Output Characteristics(II) VGS= 6.5V 15 10 VGS= 6.0V 5 0 VGS= 8.0V 15 VGS= 6.5V 10 5 VGS= 5.0V 0 5 0 10 15 20 25 30 35 40 45 50 VGS= 6.0V 0 Drain - Source Voltage : VDS [V] VGS= 10.0V VGS= 8.0V VGS= 7.0V Drain Current : ID [A] 20 VGS= 6.5V 14 Ta=150ºC Pulsed 12 VGS= 6.0V 15 10 VGS= 5.5V 5 VGS= 5.0V 10 20 30 40 4 5 VGS= 10.0V VGS= 8.0V VGS= 7.0V VGS= 6.5V Ta=150ºC Pulsed 10 VGS= 6.0V VGS= 5.5V 8 6 VGS= 5.0V 4 0 50 Drain - Source Voltage : VDS [V] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 3 2 VGS= 4.5V 0 2 Fig.10 Tj = 150°C Typical Output Characteristics(II) Drain Current : ID [A] 25 1 Drain - Source Voltage : VDS [V] Fig.9 Tj = 150°C Typical Output Characteristics(I) 0 VGS= 7.0V VGS= 4.5V 0 1 2 3 4 5 Drain - Source Voltage : VDS [V] 7/13 2013.05 - Rev.A Data Sheet R6025FNZ Fig.11 Breakdown Voltage vs. Junction Temperature Fig.12 Typical Transfer Characteristics 100 900 VDS= 10V Plused 850 10 800 Drain Current : ID [A] Drain - Source Breakdown Voltage : V(BR)DSS [V] lElectrical characteristic curves 750 700 650 600 1 0.1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.01 550 500 -50 -25 0 25 50 75 0.001 100 125 150 0 2 Junction Temperature : Tj [°C] Fig.13 Gate Threshold Voltage vs. Junction Temperature 10 100 VDS= 10V Plused VDS= 10V ID= 1mA Plused 5 4 3 2 10 1 0.1 1 0 8 Fig.14 Transconductance vs. Drain Current Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 6 6 Gate - Source Voltage : VGS [V] 8 7 4 -50 -25 0 25 50 75 0.01 0.01 100 125 150 Junction Temperature : Tj [°C] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.1 1 10 100 Drain Current : ID [A] 8/13 2013.05 - Rev.A Data Sheet R6025FNZ lElectrical characteristic curves 0.5 Ta=25ºC Pulsed 0.4 ID = 12.5A ID = 25A 0.3 0.2 0.1 0.0 0 2 4 6 8 Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] 0.4 VGS= 10V Plused 0.3 ID = 25A 0.2 ID = 12.5A 0.1 0.0 -50 -25 0 25 50 75 100 125 150 Junction Temperature : Tj [ºC] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current 10 VGS= 10V Plused Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 1 0.1 0.01 0.01 0.1 1 10 100 Drain Current : ID [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 9/13 2013.05 - Rev.A Data Sheet R6025FNZ lElectrical characteristic curves Fig.18 Typical Capacitance vs. Drain - Source Voltage Fig.19 Coss Stored Energy 100000 Coss Stored Energy : EOSS [uJ] 20 Capacitance : C [pF] 10000 Ciss 1000 100 Coss 10 1 Ta=25ºC f = 1MHz VGS = 0V 0.01 Crss 0.1 1 10 100 16 14 12 10 8 6 4 2 0 1000 Ta=25ºC 18 0 Drain - Source Voltage : VDS [V] 200 400 600 Drain - Source Voltage : VDS [V] Fig.21 Dynamic Input Characteristics 10000 10 td(off) 1000 10 1 tf td(on) 100 VDD ≒ 300V VGS = 10V RG= 10W Ta = 25ºC Pulsed Gate - Source Voltage : VGS [V] Switching Time : t [ns] Fig.20 Switching Characteristics tr 0.01 0.1 1 10 6 4 Ta = 25ºC VDD= 300V ID= 25A Pulsed 2 0 100 0 10 20 30 40 50 60 70 80 90 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 8 10/13 2013.05 - Rev.A Data Sheet R6025FNZ lElectrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 1000 VGS=0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 100 10 1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.1 0.01 0.0 0.5 1.0 Ta=25ºC VGS = 0V di / dt = 100A / ms Pulsed 10 1.5 Source - Drain Voltage : VSD [V] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 100 0.1 1 10 100 Inverse Diode Forward Current : IS [A] 11/13 2013.05 - Rev.A Data Sheet R6025FNZ lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 12/13 2013.05 - Rev.A Data Sheet R6025FNZ lDimensions (Unit : mm) E D TO-3PF E1 A A A1 A2 A4 F φp Q L b1 x A c b e DIM A A1 A2 A4 b b1 c D E e E1 F L p Q x MILIMETERS MIN MAX 26.30 26.70 2.30 2.70 26.30 26.70 9.80 10.20 0.65 0.95 1.80 2.20 0.80 1.10 15.30 15.70 5.30 5.70 5.45 2.80 3.20 4.30 4.70 14.60 15.00 3.40 3.80 3.10 3.50 0.50 INCHES MIN 1.035 0.091 1.035 0.386 0.026 0.071 0.031 0.602 0.209 0.215 0.110 0.169 0.575 0.134 0.122 - MAX 1.051 0.106 1.051 0.402 0.037 0.087 0.043 0.618 0.224 0.126 0.185 0.591 0.150 0.138 0.020 Dimension in mm / inches www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 13/13 2013.05 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. R1102A