View detail for User Guide for Atmel ATA6870 and Atmel ATmega32HVB Evaluation Kit Hardware DK11

APPLICATION NOTE
User Guide for Atmel ATA6870 and Atmel ATmega32HVB
Evaluation Kit Hardware DK11
ATA6870-DK11
Features
● Evaluation of the Atmel® ATA6870
● Monitoring 12 battery cells
● Monitoring:
● Overvoltage (every cell)
● Undervoltage (every cell)
● Overheating
● Overcurrent
● Open clamp detection
● 12-bit battery cell measurement
● 12-bit temperature measurement
● Controlling FET charge/discharge
● Status LEDs for easy evaluation
● Charge active balancing
Figure 1.
Atmel ATA6870-DK11
9302C-AUTO-04/15
1.
Introduction
The Atmel® ATA6870-DK11 is a demonstration board for the Atmel ATA6870 and offers an easy way to start evaluation of
battery applications in combination with the Atmel ATmega32HVB. The included software demonstrates implementation of a
12-cell battery management system, including the function of active balancing through inductors. The supplied code serves
as an example of how to use the Atmel ATMega32HVB and Atmel ATA6870 together.
2.
Safety Precautions When Using Li-Ion Batteries
Please observe the safety guidelines supplied with the batteries. If improperly used or defective, Li-ion and polymer batteries
and packs may explode and cause a fire.
3.
Demonstration Board
The Atmel ATA6870-DK11 is designed to enable easy evaluation of the control software for an MCU controlling multiple
Atmel ATA6870 devices. The supplied sample code demonstrates a simple permanent running measurement of voltages
and temperatures.
Figure 3-1. Board Concept
Cell 12
Cell 11
ATA6870
ATA6870
Cell 02
Cell 01
Charge/
Discharge
Control Unit
Monitoring (V,T)
Coulomb counting
ATmega32HVB
A very important characteristic of the ATA6870-DK11 is the ability to realize active balancing. Compared with the passive
method, the active method is significantly more efficient with virtually lossless energy transfer between battery cells. There
are usually two types of active balancing—with capacitors and with inductors. The capacitors are used for balancing currents
lower than 50mA, while the inductors are for currents up to 1A or even more. On the ATA6870-DK11 the inductors with the
value of 470uH are applied. Table 3-1 describes the achievable peak and average balancing currents with different
inductors.
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Table 3-1.
Balancing Currents Possible Using Different Inductors
f (kHz)
Inductor
Type
Inductance (µH)
Resistor of
Inductor (m)
Peak Balancing
Current (mA)
Average Balancing
Current (mA)
3
Toroidal
300
130
1240
470
3
Toroidal
470
135
790
280
3
SMD
220
380
2280
890
3
SMD
330
430
1620
610
3
SMD
470
560
1500
430
The structure is shown in Figure 3-2. It is easy to see that on the demo board the active balancing can only happen between
the two neighboring cells and the balancing current flows from the higher cell to the lower cell, with the corresponding Mosfet
switched on. However, if it is the lowest cell of a battery stack that needs to be discharged, a transformer concept applies
and the energy is transferred from the lowest cell to the top cell in the battery stack. For more information about the active
balancing, please see application note “Active Cell Balancing Methods for Li-Ion Battery Management ICs using the
ATA6870.”
Figure 3-2. Inductive Charge Balancing between Two Stacked ATA6870s
M12
Cell 12
PMOS
L12
D11
M11
Cell 11
PMOS
L11
D10
Cell 10
L8
D7
M7
Cell 7
PMOS
L7
Balance Circuit of upper ATA6870
Balance Circuit of lower ATA6870
M6
D6
Cell 6
PMOS
L6
D5
M5
Cell 5
PMOS
L5
Cell 4
D4
D12
L1
D1
T1
Cell 1
M1
GND
ATA6870-DK11 [APPLICATION NOTE]
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3
3.1
System Start
Follow these steps to launch the system.
3.1.1
Installing the Hardware
●
Connect the load/charger to J1.
●
●
Connect the 12-cell stack to the J2 and J3 screw connectors.
●
●
3.1.2
For demonstration purposes it is possible to use a resistor to simulate a load.
LED 1 indicates the enabled status of ATA6870-DK11 (controlled by the MCU software, see Table 4-1)
In case of emulating cells such as a voltage divider, please apply sufficient voltage.
Number of Cells
It is possible to run the board with a reduced number of cells. The minimum voltage for each IC is 6.9V. Cell 1 and cell 6
have to be connected. The missing cells should be short-circuited to the upper cell potential of the module. For further
information, see Section 7.3 “Reduced Number of Battery Cells Configuration” of the Atmel ATA6870 datasheet. For the
voltage range, see Section 3.3 “Powering the Board” on page 6. If fewer than 6 cells are used per IC, the config.h file should
be adjusted (CELLSIC# under General Setting). See Section 4.1 “Supplied Code” on page 7 for further information on how to
configure the supplied software correctly.
3.2
The Demonstration Board
Figure 3-3. Evaluation Board with Two Stacked Atmel ATA6870 and Atmel ATMega32HVB
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ATA6870-DK11 [APPLICATION NOTE]
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3.2.1
On-Board Features
The demonstration board includes the following items:
● TwoAtmel® ATA6870 QFN 7mm  7mm
●
●
●
Atmel ATMega32HVB
12 external P-channel MOSFETs, 11 inductors, 13 diodes and one transformer for active balancing
Connectors
●
ISP connector for programming/debugging the Atmel ATMega32HVB
●
Screw connectors for connecting up to 12 battery cells
Table 3-2.
Table 3-3.
Connector Overview
Connector
Function
J1
Connector for charger/device to be powered
J2
Bottom battery stack (cells 1-6)
J3
Upper battery stack (cells 7-12)
J10
ISP connector
Jumper Overview
Jumper
Function
J9
Jumper to enable/disable MISO line of Atmel ATA6870 (see details below)
J13, J14, J15, J17
Current measurement for active balancing (should be closed for charge transfer)
J9 should never be set while the Atmel ATmega32HVB is being programmed or while it is entering debug mode. It can be
mounted as soon as AVR Studio® prompts for additional SPI lines to be connected in debug mode or after the device has
been correctly programmed.
Table 3-4.
Test Point Overview
Test Point
Function
J19
IC2 work status
J21
MCU power and SPI status
ATA6870-DK11 [APPLICATION NOTE]
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5
Figure 3-4. Connectors, Jumpers, and Test Points
3.3
Powering the Board
3.3.1
Power Supply
The board supports supply voltages ranging from 13.8V (minimum 6.9V per Atmel ATA6870) to 60V. However, to run the
board on voltages below 24V the ZDiode D14 needs to be replaced with a jumper to supply the Atmel® ATmega32HVB with
sufficient voltage. If the jumper is mounted, be sure that stack voltage does not exceed 48V. The Atmel ATmega32HVB
supports operating voltage from4V to 24V.
3.3.2
Emulating Cells
Battery cells can be emulated by connecting a voltage divider to the specified clamps. Section 3.1.1 “Installing the Hardware”
on page 4 describes how to connect cells. The voltage limits for this setup are the same as for the real batteries. Section
3.3.1 “Power Supply” on page 6 specifies these limits.
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4.
Software Description: Monitoring Up to 12 Battery Cells
The supplied code is documented and easy to adjust for verifying the basic functions of the Atmel® ATA6870 and start BMS
application development.
After the board is ready as described above, the microcontroller automatically starts a cyclic measurement of voltages,
temperature and current. The status is indicated by the three LEDs on the board and the functions of the LEDs are
programmable according to different requirements. LED1 is switched on at the beginning of the main routine and toggles
with the active balancing. LED2 indicates that for some reason the charger/load MOSFETS have been disabled. The default
software disables the FETs in case of these events:
● Overvoltage (at least one cell exceeds the upper default threshold of 4.2V)
●
●
●
●
Undervoltage (at least one cell exceeds the lower default threshold of 2.5V)
Overcurrent (the current through the shunt exceeds the default threshold of 80mA)
Overheating (the temperature exceeds the upper threshold, default value is 80°C)
Low temperature threshold (the default threshold is –20°C)
LED3 indicates whether the Atmel ATA6870 devices are turned on or not. An active LED indicates that the Atmel ATA6870
devices are enabled.
Table 4-1.
LED
LED1
LED Functions
Function
ON indicates access in the main routine
TOGGLE indicates that the active balancing is operating
LED2
ON indicates disabled MOSFETs for one of the reasons listed above
LED3
ON indicates active Atmel ATA6870
The ATA6870 system clock should be provided externally. The Atmel ATmega32HVB has no clock divider to provide an
external clock slower than 1/2 CPU clock. The requirement for the Atmel ATA6870 is fCLK > 2 × fSPI. As a result, the clock
frequency of 1MHz is mandatory to provide a 500kHz clock for the ADCs of the Atmel ATA6870 and 250kHz for SPI.
4.1
Supplied Code
4.1.1
Config.h
This section refers to the config.h file provided in the demonstration source code. Only values in the user setting paragraph
should be changed and other values should not be changed in the default hardware setup. For example, the variable
CELLSIC should be set to match the status of the batteries actually connected.
------------- GENERAL SETTING-------------------------------CELLSIC# Selecting which cells are used Bits 0-5 -> Cells 1-6
------------- TEMPERATURE SETTING---------------------------RES_REF# Value of the mounted reference resistor (default: 3300)
T_TLS Temperature belonging to the first value in the lookup table (index 0, default: -20)
T_TLE Temperature belonging to the last value in the lookup table (default: 80)
T_TLSZ Temperature step size used in the lookup table (default: 1)
T_LOWERTHRESHOLD Lower temperature threshold
T_UPPERTHRESHOLD Upper temperature threshold
ATA6870-DK11 [APPLICATION NOTE]
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------------- COULOMBCOUNTER SETTING------------------------SHUNT_RESISTANCE Value of the shunt resistor in mOhm
RCC_CONVERSIONPERIOD The cycle times for the Regular Current Check
0x00 - 256ms (default)
0x01 - 512ms
0x02 - 1s
0x11 - 2s
RCC_DIVIDEDSZ 0x01 to enable divided Voltage (Current) stepsize
RCC_CHARGETHRESHOLD Threshold for charging current, exceeding the threshold will turn off
the Mosfets
RCC_DISCHARGETHRESHOLD Threshold for discharging current, exceeding the threshold will turn
off the Mosfets.
Balancingthreshold Threshold for the active balancing.
4.2
Voltage Measurements
The standard software loop measures the voltage ADC value and the offset ADC value for every cell and checks for
overvoltage and undervoltage once per cycle. Further information about acquiring voltages can be found in Section 7.5.1 of
the Atmel® ATA6870 datasheet. The formula for calculating the voltage is:
V acq – V offset
Voltage (Cell) = 4V   ---------------------------------
3031 – V offset
4.3
Temperature Measurements
The default software only measures channel 1 of chip 1. The temperature sensors are based on a resistor divider using a
standard resistor and an NTC resistor. This resistor divider is connected to the reference of the ADC for temperature
measuring. Because the ADC shares the same reference value, the output of temperature measurement with ADC is ratiometric. Further information can be found in Section 7.5.3 “Temperature Channel” of the Atmel ATA6870 datasheet.
For this application Atmel recommends using Res_Ref1 = 3.3k and RES_NTC1 R25 = 4.7k, B = 3500. The software
supplied for this board uses these values as default. The function uses a lookup table to determine the temperature. This
table has to be edited if an NTC other than the recommended one is used. The values in the lookup table range from –20°C
(index 0) to +80°C (index 100). These values can be edited via the config.h file in the user settings section. More Information
about this file can be found in Section 4.1 “Supplied Code” on page 7. The calculation of RES_NTC is carried out based on
the formula provided in Section 7.5.3 of the Atmel ATA6870 datasheet:
RES_NTC(1)
8
8
adc (out) = 2048   1 + ----------------------------------------------------------------------------  ------ – ------

 RES_NTC(1) + RES_REF(1)  15 10
When using another NTC, the LookupADC.txt has to be edited to match the NTC used.
4.4
Gas Gauging
Gas gauging is a commonly used method for estimating how much capacity and runtime are left in the battery. By combining
its very accurate VADC and CCAVC the Atmel ATmega32HVB can achieve high accuracy gas gauging. Here the voltagebased gas gauge is for the remaining capacity initialization, while the coulomb-counter-based voltage is to keep track of how
much current is being used to charge and discharge the battery. Because the gas gauging calculation needs
characterization data for the specific battery cell, the algorithm does not fall within the scope of this application note. See the
other AVR® application notes for further details.
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4.5
Overcurrent Protection
The current through the shunt is calculated by measured voltage drop. The limit can be set via the CADRDC/CADRCC
register. The step size depends on the settings of the CADCSRC register and the shunt used. For further information about
the limiting current see Section 19.4 “Regular Current Detection Operation” of the Atmel ATmega32HVB datasheet. The
supplied software allows the feature to be tested by adjusting the values in the config.h file. More Information about this file
can be found in Section 4.1 “Supplied Code” on page 7. Values/part of the code should only be changed if you are aware of
possible consequences. The default implementation continuously measures the current and generates an interrupt if the
entered thresholds are exceeded. The thresholds are defined in the config.h file. The thresholds are written to the registers
in the CCinit function in the Atmel ATA6870_func.c file. Refer to the features of the Atmel ATmega32HVB in the coulomb
counter section to learn more about the time the controller waits for the values to be written.
Table 4-2.
C Code Example
C Code Example
CADRCC = RCC_CADRCC;
while(CADCSRA & (1 << CADUB));
CADRDC = RDC_CADRDC;
while(CADCSRA & (1 << CADUB));
4.6
// Charge Threshold
// Wait values to be written
// Discharge Threshold
// Wait values to be written
Active Balancing
To realize the function of actively balancing the PMOS only needs to be switched on and off to charge and discharge the
inductors (see Figure 4-1). The PWM signal would be an ideal switching signal on the DISCH pins to control the PMOS. In
ATA6870 there are no PWM-generating modules implemented. Therefore, to simulate the function of the PWM signal in the
demonstration software the continuous on and off commands can be delivered via the SPI communication from the
ATmega32HVB to the ATA6870 devices.
Figure 4-1. Charging and Discharging Inductors
Ln+1
MBATn+1
1kΩ
Dn
RPUP
Cell n
Ccoup
100nF
DISCHn
DISCHn
= Low
PMOS
Ln
RPD
MBATn
1kΩ
Cell n-1
DISCHn
= High
Dn-1
100nF
DISCHn-1
MBATn-1
1kΩ
4.6.1
Single Balancing Mode
In the demo software two routines of the active balancing are implemented. ActiveBalance_SingleCell() is used to monitor
current with a current probe by replacing jumpers J15, J17 and J13, J14 with a short cable. Under no condition is active
balancing triggered in this routine and 5 PWMs are performed. The following code example is part of the
ActiveBalance_SingleCell() routine, which performs a balancing operation between cell 5 and cell 4 on the IC2.
ATA6870-DK11 [APPLICATION NOTE]
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9
Table 4-3.
C Code Example
C Code Example
Discharge(0xEE);
Discharge(0xFE);
//Switch the PMOS between the cell4 and cell5 of IC2 on
//Switch the PMOS between the cell4 and cell5 of IC2 off
Discharge(0xEE);
Discharge(0xFE);
Discharge(0xEE);
Discharge(0xFE);
Discharge(0xEE);
Discharge(0xFE);
Discharge(0xEE);
Discharge(0xFE);
The code above generates the PWM signal by delivering “high” and “low” to the DISCH3 pin via SPI, enabling active
balancing between cell 4 and cell 5 of the IC2. In Figure 4-2 the balancing current and the related switching signal are
shown. The peak value of the balancing current is around 1.3A and the switching frequency is around 3.0kHz, which is
almost the maximum reachable frequency when the SPI runs at around 250kHz.
Figure 4-2. Active Balancing Diagram
There is one final consideration: What happens when the PMOS is switched on and cannot be turned off in time, for
example, an interrupt happens while the PMOS is on. Does this mean a short circuit occurs between the cathode and anode
of the battery cell? This is prevented from happening by the hardware design of the ATA6870-DK11, which automatically
turns off the PMOS through capacitive coupling after a period of time elapses as defined by R/C. Figure 4-3 shows this
effect. A delay function is inserted after the first switching on signal. After the current reaches the peak current of around 5A,
it is possible to see that the PMOS is switched off on its own and the following active balancing can still run normally.
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ATA6870-DK11 [APPLICATION NOTE]
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Figure 4-3. PMOS is Switched Off Automatically
4.6.2
Automatic Mode
In the other ActiveBalance() routine active balancing happens between two cells according to the voltage difference. If the
voltage of the higher cell is greater than the lower cell by “Balancing threshold,” as defined in config.h, the balancing PWMs
are performed to balance the difference until the differences between all the cells are beneath the threshold.
As shown in Figure 3-2 on page 3, balancing between the lowest cell and the highest cell is carried out through a
transformer, which should work according to your application (current, frequency and other related characteristics should be
considered).
ATA6870-DK11 [APPLICATION NOTE]
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11
5.
Features of the Atmel ATmega32HVB
Because the Atmel® ATmega32HVB is a part of the Atmel AVR® family of products dedicated to battery management, there
are several special features included such as coulomb counting and the control of the two charge/discharge MOSFETs.
5.1
Coulomb Counter
The coulomb counter ADC runs on a different clock than the CPU. This clock is slower and therefore several things have to
be kept in mind before using it. Writing several registers in sequence takes a long time depending on the delays between
each write cycle. The update busy (CADUB) bit in CADSRA is cleared and written by hardware. A possible solution is given
in the supplied software example:
Table 5-1.
C Code Example
C Code Example
void CCinit(){
CADRCC = RCC_CADRCC;
// Charge Threshold
while(CADCSRA & (1 << CADUB));
CADRDC = RDC_CADRDC;
// Discharge Threshold
while(CADCSRA & (1 << CADUB));
SETBIT(CADCSRB,1<<CADRCIE);
// Interrupt Enable
while(CADCSRA & (1 << CADUB));
SETBIT(CADCSRC,RCC_DIVIDEDSZ<<CADVSE);
// Voltage Scaling
while(CADCSRA & (1 << CADUB));
SETBIT(CADCSRA,((1<<CADEN)|(1<<CADSE)|(RCC_CONVERSIONPERIOD<<1)));
// ADC Enable, RCC Mode, Sampling Interval
while(CADCSRA & (1 << CADUB));}
5.2
Charging/Discharging FETs
The two FETs are controlled by an N-channel FET driver. The pins (OC and OD) are designed for outputting a high voltage
of approx. 13V. The status of the pins is controlled by software via the FCSR-FET control and the status registers.
Table 5-2.
C Code Example
C Code Example
void Configure_Fet(unsigned char Fet){
if(Fet&0x01) SETBIT(FCSR, (1<<DFE));
else CLEARBIT(FCSR,(1<<DFE));
if(Fet&0x02) SETBIT(FCSR,(1<<CFE));
else CLEARBIT(FCSR,(1<<CFE));}
The example above implements an easy method to enable or disable the two FETs independently of each other. For more
information, see page 148 of the Atmel ATmega32HVB datasheet. In cases where the battery string voltage exceeds the
maximum voltage of the ATmega32HVB, two GPIOs can be used to switch on the NMOS as well; for example, PB0 and PA3
are responsible for controlling the charging and discharging MOSFETs in the demo software.
6.
Power Consumption
There are several ways to reduce the power consumption of the Atmel ATA6870 and the Atmel ATmega32HVB. Sleep
modes are documented in Section 7.1.1 of the Atmel ATA6870 datasheet and in Section 10 of the Atmel ATmega32HVB
datasheet. This board allows the Atmel ATA6870 to be enabled/disabled using the Atmel ATmega32HVB software. The PB2
pin is used to control a transistor for activating/deactivating the Atmel ATA6870. Other options which are not implemented
are the use of interrupts and a timer (sleep between cycles).
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ATA6870-DK11 [APPLICATION NOTE]
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7.
Efficiency
Figure 8-1 shows the schematic of the active balancing circuit. The tests are based on the WE749196511 transformer. The
maximum PWM switching frequency of the system is 3kHz. As a result, the transformer selected needs to be large enough
to store the energy. In the following figures the individual inductor and transformer efficiency are calculated.
Figure 7-1. Inductor Efficiency
Inductor efficiency = 460µWs/720µWs = 64%
Figure 7-2. Transformer Efficiency
Transformer efficiency = 600µWs/1500µWs = 40%
The efficiency of the inductor to the next cell is around 64% and the efficiency of the transformer from the lowest cell to the
highest one is 40%. Based on these values the efficiency simulation is carried out under the following conditions:
● The number of runs is 100,000
●
●
●
●
Min/max is ±10% cell voltage difference
Distribution across three 
The assumed average balance current is 1A
12 cells
ATA6870-DK11 [APPLICATION NOTE]
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13
Figure 7-3. Simulation Result with Active Balancing
Figure 7-4. Simulation Result with Passive Balancing
Every result consists of four diagrams:
1. Efficiency of the whole stack
2.
Overall loss due to the balancing
3.
Time until the balancing is finished
4.
Final energy in each cell
The simulation result indicates that with passive balancing the overall loss is around 5.29% and with active balancing the
overall loss is 2.11%. It can therefore be concluded that active balancing of ATA6870-DK11 reduces the balancing losses to
40% instead of 100% of passive balancing.
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Schematic
8.
Figure 8-1. Schematic of ATA6870-DK11
R93
4K7
GND
R90
150R
100nF
C29
R43
1K
J7 Header 3
GND_2
GND_2
C23
VDDHVP
PD_N
MISO_IN
MOSI_OUT
CK_OUT
CS_N_OUT
CLK_OUT
IRQ_IN
VDDHV
MBAT7
DISCH6
MBAT6
C22
220nF nc(33uF/50V)
37
38
39
40
41
42
43
44
45
46
47
48
100nF
C28
R42
1K
R64
R37
121K
100nF
C27
R41
1K
R63
R36
NTC
R33
R34
NTC
3K3
R35
3K3
GND_2
D21 1N4148
R31
100K
C14
R25
1K
100nF
10R/0.25W
R69
GND_2
GND_2
10nF
R39
1K
R70
0R
R68
C21
C32
100nF
10K
R62
24
23
22
21
20
19
18
17
16
15
14
13
IC1
ATA6870
24
GND_2
R32
100K
GND
GND
DVDD
DVSS
VDDFUSE
CS_FUSE
SCANMODE
DTST
MFIRST
MISO
MOSI
SCK
CS_N
100nF
C26
R40
1K
R46
100K
D20 1N4148
J5
R17
121K
Header 3
GND_1
GND_1
220nF nc(33uF/50V)
C7
C8
VDD_HVM
VDDHVP
PD_N
MISO_IN
MOSI_OUT
CK_OUT
CS_N_OUT
CLK_OUT
IRQ_IN
VDDHV
MBAT7
DISCH6
MBAT6
100nF
C13
R24
1K
D22 1N4148
R23
1K
C12
100nF
R59
10K
C18
100nF
D23 1N4148
C19 10K
R30
R29
100K100nF
100K
R60
10uF/30V
C39
C38 100nF/30V
37
VDDHVP
PD_N 38
39
40
41
42
43
44
45
46
47
48
R61
10K
C20
100nF
NTC
R13
R14
VDD_HVM
PD_N
VDDHVP
R16
NTC
3K3
R15
3K3
J19
1
2
3
C16
100nF
10K
R57
C9
100nF
R26
100K
R56
10K
C15
100nF
D2
Schottky SS14
D26 1N4148
R20
1K
GND_1
GND_1
GND_1
Header 3
GND_1
10nF
D25 1N4148
R27
100K
R21
1K
C10
100nF
C6
IC2
ATA6870
24
GND_1
R12
100K
GND
24
23
22
21
20
19
18
17
16
15
14
13
C17
100nF
10K
R58
C11
100nF
GND
DVDD
DVSS
VDDFUSE
CS_FUSE
SCANMODE
DTST
MFIRST
MISO
MOSI
SCK
CS_N
R22
1K
R28
100K
D24 1N4148
M11
PMOS SI2323
J2F
J2G
R19
1K
J9
MISO
MOSI
SCK
CS_N
PC0
VCC
VREF
VBATT
GND_1
RESET
GND
VCC
VCC
LED1
VCC
T1
Transformer WE749196511
J13
D13
R73
5K1
R74
J21
1
2
3
4
5
6
7
8
9
10
11
12
Header 12
LED2
LED3
R10
R8 1K
1K
R9
1K
GND
5K1
1
2
J14
+
GND
VFET
GND
C2 100nF
C41
GND
2.2uF/25V
R7
1K
C40
100nF/50V
GND
VCC
100nF
C50
Rsense
R6
D1 LL4148
R11
10K
PV2
Q8
NPN FMMT620
R66
R65
10K
C33
100nF
D4
Schottky SS14
D3
Schottky SS14
M12
PMOS SI2323
J2E
GND
PV1
41
40
39
38
R92
51K
100nF
C30
R44
1K
10K
C36
10K
C35
100nF
R47
100K
D19 1N4148
D6
Schottky SS14
J17
M9
PMOS SI2323
1
2
D5
Schottky SS14 M10
PMOS SI2323
Schottky SS14
J2D
Q7
BTS6163
3
J2C
+Vbb
PB2
3
100nF
C31
R67
R49 100K
10K
C34
100nF
M7
PMOS SI2323
M8
PMOS SI2323
0R
R72
IS
Q6
NPN MMBT2222A
4
Discharge
R91
7K5
2
Q9
PMOS SQ2301ES
100nF/30V
C24
C25
R45
1K
10K
C37
100nF
R48
100K
D18 1N4148
D8
Schottky SS14
J2B
4K7
R77
D Zener BZV55C6V8-TP
J2A
D14
D7
Schottky SS14
3
Charge
J11
330R
R78
J1D
R1
1K
RESET
C5
nc
GND
ATMEGA32HVB
MCU
RESET
19
RESET/DW
NC
NC
17
27
R51 100K
D17 1N4148
M5
PMOS SI2323
1K
R71
GND
C59
GND
2.2uF
J1C
100R
PV1
PV2
PV3
PV4
PC1
1K
R2
100nF
R50 100K
D10
Schottky SS14
J15
GND
PV2
GND
J1B
1K
R4
R3
PVT
37
MISO
PC0
PI
PPI
NI
NNI
NV
OC
OD
44
43
1
2
42
18
16
GND
GND
GND
VREFGND
C1
5
15
35
3
100nF
PC0(INT0/EXTPROT)
PC1(INT1)
PC2(INT2)
PC3(INT3/SDA)
PC4(SCL)
PC5
29
30
31
32
33
34
VBATT
1
2
J1A
100R
R5
Charge
PB2
20
21
22
23
24
25
26
28
PB0(PCINT4/ICP00)
PB1(PCINT5/CKOUT)
PB2(PCINT6)
PB3(PCINT7)
PB4(SS/PCINT8)
PB5(SCK/PCINT9)
PB6(MOSI/PCINT10)
PB7(MISO/PCINT7)
7
8
9
10
PA0(ADC0/SGND/PCINT0)
PA1(ADC1/SGND/PCINT1)
PA2(PCINT2/T0)
PA3(PCINT3/T1)
VCC
VCC
VREG
VREF
VFET
VBATT
VCLMP10
VREF
14
36
6
4
12
13
11
100nF
C4
10R/0.25W
R18
D16 1N4148
M3
PMOS SI2323
1
2
D9
Schottky SS14
J3G
M6
PMOS SI2323
J3F
Q3
PV1
NSS60601MZ4
1
J3E
C60
2.2uF
Discharge
GND
J6
2.2uF/100V
C3
D15 1N4148
D12
Schottky SS14
D11
Schottky SS14
M4
PMOS SI2323
R75
4K7
GND
L1 470 uH
Inductor WE7447709471
MISO
MOSI
SCK
CS_N
12
11
10
9
8
7
1
2
3
4
5
6
2
1
M1
PMOS SI2323
M2
PMOS SI2323
J3D
330R
R76
J12
Q4
NPN MMBT2222A
Q5
BTS6163
4
7
4
J3C
IS
2
L2 470 uH
Inductor WE7447709471
5
7
6
L3 470 uH
Inductor WE7447709471
10uF/30V
R52
10R/0.25W
J3A
+Vbb
J8
1
3
3
4
6
2
4
2
+
L5 470 uH
Inductor WE7447709471
1
2
3
5
1
2
10R/0.25W
36
35
34
33
32
31
30
29
28
27
26
25
L4 470 uH
Inductor WE7447709471
3
4
2
VDDHVM
PD_N_OUT
POW_ENA
PWTST
BIASRES
TEMPREF
TEMP2
TEMP1
TEMPVSS
AVSS
AVDD
ATST
IN
7
DISCH5
MBAT5
DISCH4
MBAT4
DISCH3
MBAT3
DISCH2
MBAT2
DISCH1
MBAT1
IRQ
CLK
OUT
L7 470 uH
Inductor WE7447709471
1
2
3
4
5
6
7
8
9
10
11
12
1&5
L6 470 uH
Inductor WE7447709471
2
6
7
1
1
2
1
2
1
2
3
36
35
34
33
32
31
30
29
28
27
26
25
VDDHVM
PD_N_OUT
POW_ENA
PWTST
BIASRES
TEMPREF
TEMP2
TEMP1
TEMPVSS
AVSS
AVDD
ATST
DISCH5
MBAT5
DISCH4
MBAT4
DISCH3
MBAT3
DISCH2
MBAT2
DISCH1
MBAT1
IRQ
CLK
6
L9 470 uH
Inductor WE7447709471
1
2
3
4
5
6
7
8
9
10
11
12
L8 470 uH
Inductor WE7447709471
5
4
4
5
1
2
L10 470 uH
Inductor WE7447709471
3
3
2
IN
3
1
OUT
1&5
1
1
L11 470 uH
Inductor WE7447709471
J3B
3
2
1
2
2
1
PB2
GND
9302C–AUTO–04/15
15
ATA6870-DK11 [APPLICATION NOTE]
9.
Revision History
Please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this
document.
16
Revision No.
History
9302C-AUTO-04/15
Put document in the latest template
9302B-AUTO-06/13
Section 7 “Efficiency” on page 13 updated
ATA6870-DK11 [APPLICATION NOTE]
9302C–AUTO–04/15
XXXXXX
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