NTD5414N D

NTD5414N, NVD5414N
Power MOSFET
24 A, 60 V Single N−Channel DPAK
Features
•
•
•
•
•
Low RDS(on)
High Current Capability
Avalanche Energy Specified
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
http://onsemi.com
V(BR)DSS
RDS(ON) MAX
60 V
37 mW @ 10 V
Applications
•
•
•
•
ID MAX
(Note 1)
24 A
N−Channel
LED Lighting and LED Backlight Drivers
DC−DC Converters
DC Motor Drivers
Power Supplies Secondary Side Synchronous Rectification
D
G
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
S
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
Gate−to−Source Voltage − Nonrepetitive
(TP < 10 ms)
VGS
$30
V
3
A
DPAK
CASE 369AA
STYLE 2
Continuous Drain
Current RqJC
(Note 1)
Steady
State
Power Dissipation
RqJC (Note 1)
Steady
State
TC = 25°C
ID
TC = 100°C
24
4
1 2
16
55
W
MARKING DIAGRAMS
& PIN ASSIGNMENT
IDM
75
A
TJ, Tstg
−55 to
+175
°C
4
Drain
IS
24
A
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 V, IL(pk) = 24 A,
L = 0.3 mH, RG = 25 W)
EAS
86.4
mJ
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
TL
Pulsed Drain Current
tp = 10 ms
Operating and Storage Temperature Range
Source Current (Body Diode)
2
1
3
Drain
Gate
Source
°C
260
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Case (Drain) Steady State
(Note 1)
Symbol
Max
Unit
RqJC
2.7
°C/W
RqJA
58.6
August, 2014 − Rev. 2
A
Y
WW
5414N
G
= Assembly Location*
= Year
= Work Week
= Specific Device Code
= Pb−Free Device
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2014
AYWW
54
14NG
PD
TC = 25°C
1
Publication Order Number:
NTD5414N/D
NTD5414N, NVD5414N
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
V(BR)DSS
VDS = 0 V, ID = 250 mA
60
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
V(BR)DSS/TJ
IDSS
V
67.3
VGS = 0 V
VDS = 60 V
mV/°C
TJ = 25°C
1.0
TJ = 150°C
50
IGSS
VDS = 0 V, VGS = $20 V
VGS(th)
VGS = VDS, ID = 250 mA
$100
mA
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
VGS(th)/TJ
2.0
3.2
Drain−to−Source On−Voltage
VDS(on)
VGS = 10 V, ID = 12 A, 150°C
0.7
Drain−to−Source On−Resistance
RDS(on)
VGS = 10 V, ID = 24 A
28.4
gFS
VDS = 15 V, ID = 20 A
24
Input Capacitance
Ciss
800
Output Capacitance
Coss
VDS = 25 V, VGS = 0 V,
f = 1 MHz
Forward Transconductance
4.0
0.74
VGS = 10 V, ID = 24 A
0.7
V
mV/°C
1.16
V
37
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Transfer Capacitance
Crss
1200
pF
48
nC
165
75
VGS = 10 V, VDS = 48 V,
ID = 24 A
Total Gate Charge
QG(TOT)
25
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
4.8
Gate−to−Drain Charge
QGD
11.3
1.1
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
VGS = 10 V, VDD = 48 V,
ID = 24 A, RG = 9.1 W
ns
12
58
td(off)
47
tf
69
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage (Note 2)
VSD
VGS = 0 V
IS = 24 A
TJ = 25°C
0.92
TJ = 125°C
0.8
IS = 24 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
tb
14
QRR
76
Reverse Recovery Stored Charge
45.7
1.15
V
ns
31.7
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
NTD5414N, NVD5414N
TYPICAL PERFORMANCE CURVES
40
40
10 V
TJ = 25°C
6V
7V
25
20
5V
15
4.8 V
10
4.5 V
1
2
3
4
30
25
20
TJ = 125°C
15
10
TJ = 25°C
5
VGS = 4.2 V
0
0
TJ = −55°C
0
5
2
3
4
5
6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.08
ID = 24 A
TJ = 25°C
0.07
0.06
0.05
0.04
0.03
0.02
5
6
7
8
9
10
0.040
TJ = 25°C
VGS = 10 V
0.030
0.020
0.010
10
15
25
20
35
30
40
45
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1000
2.5
VGS = 0 V
ID = 24 A
VGS = 10 V
TJ = 150°C
2.0
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
5.5 V
30
5
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
VDS ≥ 10 V
35
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
35
1.5
1.0
0.5
−50
−25
0
25
50
75
100
125
150
175
100
TJ = 125°C
10
5
10
15
20
25
30
35
40
45
50
55 60
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3
NTD5414N, NVD5414N
VGS = 0 V
TJ = 25°C
1500
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL PERFORMANCE CURVES
1000
Ciss
500
Coss
Crss
0
0
10
20
30
40
50
10
QT
8
Q1
6
Q2
4
2
ID = 24 A
TJ = 25°C
0
0
60
5
Figure 7. Capacitance Variation
IS, SOURCE CURRENT (A)
100
t, TIME (ns)
20
25
25
VDD = 48 V
ID = 24 A
VGS = 10 V
tf
td(off)
tr
td(on)
10
1
10
VGS = 0 V
TJ = 25°C
20
15
10
5
0
0.4
1
100
0.5
0.6
0.7
0.8
0.9
1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
90
0 V ≤ VGS ≤ 10 V
Single Pulse
TC = 25°C
1 ms
100 ms
10 ms
10 ms
dc
10
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.1
ID = 24 A
80
AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
15
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
100
10
Qg, TOTAL GATE CHARGE (nC)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1
10
70
60
50
40
30
20
10
0
25
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
175
NTD5414N, NVD5414N
TYPICAL PERFORMANCE CURVES
100
D = 0.5
10
r(t), (°C/W)
1
0.2
0.1
0.05
0.02
0.01
0.1
0.01
Single Pulse
Surface−Mounted on FR4 Board using 1 sq in pad size, 1 oz Cu
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTD5414NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NVD5414NT4G*
DPAK
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
5
NTD5414N, NVD5414N
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
A
A
E
b3
c2
B
4
L3
Z
D
1
2
H
DETAIL A
3
L4
b2
e
c
b
0.005 (0.13)
M
C
H
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTD5414N/D