TLE6258-2G Data Sheet (467 KB, EN)

Data Sheet, Rev. 2.1, Aug. 2007
TLE6258-2G
LIN Transceiver
Automotive Power
Edition 2007-08-08
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2004 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
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Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
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be endangered.
LIN Transceiver
TLE6258-2G
Features
•
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Single-wire transceiver, suitable for LIN protocol
Compatible to LIN specification 1.2, 1.3 and 2.0
Compatible to ISO 9141 functions
Transmission rate up to 20 kBaud
Very low current consumption in stand-by mode
Wake-up from Bus
Short circuit proof to ground and battery
Overtemperature protection
Green Product (RoHS compliant)
AEC Qualified
Description
The single wire transceiver TLE6258-2G is a monolithic integrated circuit in a PG-DSO-8
package. It works as an interface between the protocol controller and the physical bus.
The TLE6258-2G is especially suitable to drive the bus line in LIN systems in automotive
and industrial applications. Further it can be used in standard ISO9141 systems.
In order to reduce the current consumption the TLE6258-2G offers a stand-by mode. A
wake-up caused by a message on the bus sets the RxD output low until the device is
switched to normal operation mode.
The IC is based on the Smart Power Technology SPT® which allows bipolar and CMOS
control circuitry in accordance with DMOS power devices existing on the same
monolithic circuit.
The TLE6258-2G is designed to withstand the severe conditions of automotive
applications.
Type
Package
TLE6258-2G
PG-DSO-8
Data Sheet
3
Rev. 2.1, 2007-08-08
TLE6258-2G
TL E6258- 2G
R xD
1
8
N .C .
EN H
2
7
VS
V CC
3
6
Bus
T xD
4
5
GN D
AEP03406.VSD
Figure 1
Pin Configuration (top view)
Table 1
Pin Definitions and Functions
Pin No.
Symbol
Function
1
RxD
Receive data output; integrated pull-up, LOW in dominant state
2
ENN
Enable not input; integrated 30 kΩ pull-up, transceiver in normal
operation mode when LOW
3
VCC
5 V supply input
4
TxD
Transmit data input; integrated pull-up, LOW in dominant state
5
GND
Ground
6
Bus
Bus output/input; internal 30 kΩ pull-up, LOW in dominant state
7
VS
Battery supply input
8
n.c.
Not connected
Data Sheet
4
Rev. 2.1, 2007-08-08
TLE6258-2G
TL E6258 -2G
VS 7
3
VCC
30 kΩ
30 k Ω
Bus
6
Output
Stage
M ode C ontrol
2
ENN
D river
T em p.Protection
4
T xD
R eceiver
1
5
R xD
GND
AEB03405.VSD
Figure 2
Data Sheet
Functional Block Diagram
5
Rev. 2.1, 2007-08-08
TLE6258-2G
Application Information
Start Up
Power Up
Normal Mode
ENN
VCC
Low
ON
ENN
Low
Power-Up
ENN
High
ENN
High
ENN
Low
VCC
RxD
Low 1) ON or
High 3) Off
Wake Up
t > tWAKE
Stand-by Mode
ENN
VCC
High
ON or
Off
1) After wake-up via bus
3) After start up, VCC ON
TOAEA03451_1.VSD
Figure 3
State Diagram
For fail safe reasons the TLE6258-2G has already a pull-up resistor of 30 kΩ
implemented. To achieve the required timings for the dominant to recessive transition of
the bus signal an additional external termination resistor of 1 kΩ is required. It is
recommended to place this resistor in the master node. To avoid reverse currents from
the bus line into the battery supply line in case of an unpowered node, it is recommended
to place a diode in series to the external pull-up. For small systems (low bus capacitance)
the EMC performance of the system is supported by an additional capacitor of at least
1 nF in the master node (see Figure 6).
In order to reduce the current consumption the TLE6258-2G offers a stand-by mode.
This mode is selected by switching the Enable Not (ENN) input high (see Figure 3). In
the stand-by mode a wake-up caused by a message on the bus is indicated by setting
the RxD output low. When entering the normal mode this wake-up flag is reset and the
RxD output is released to transmit the bus data.
Data Sheet
6
Rev. 2.1, 2007-08-08
TLE6258-2G
Table 2
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Unit
Remarks
6
V
–
-0.3
40
V
–
-20
32
V
–
-20
40
V
-0.3
VCC +
V
t<1s
0 V < VCC < 5.5 V
Min.
Max.
-0.3
Voltages
Supply voltage
Battery supply voltage
Bus input voltage
Bus input voltage
Logic voltages at EN, TxD,
RxD
VCC
VS
Vbus
Vbus
VI
0.3
Electrostatic discharge
voltage at VS, Bus
VESD
-4
4
kV
human body model
(100 pF via 1.5 kΩ)
Electrostatic discharge
voltage
VESD
-2
2
kV
human body model
(100 pF via 1.5 kΩ)
Tj
-40
150
°C
–
Temperatures
Junction temperature
Note: Maximum ratings are absolute ratings; exceeding any one of these values may
cause irreversible damage to the integrated circuit
.
Table 3
Operating Range
Parameter
Supply voltage
Battery Supply Voltage
Junction temperature
Symbol
VCC
VS
Tj
Limit Values
Unit
Remarks
5.5
V
–
6
35
V
–
-40
150
°C
–
Min.
Max.
4.5
Thermal Shutdown (junction temperature)
Thermal shutdown temp.
TjSD
150
170
190
°C
Thermal shutdown hyst.
∆T
–
10
–
K
Rthj-a
–
185
K/W
–
Thermal Resistances
Junction ambient
Data Sheet
7
Rev. 2.1, 2007-08-08
TLE6258-2G
Table 4
Electrical Characteristics
4.5 V < VCC < 5.5 V; 6.0 V < VS < 27 V; RL = 500 Ω; VENN < VENN,ON; -40 °C < Tj < 125
°C; all voltages with respect to ground; positive current flowing into pin; unless otherwise
specified.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit Remark
Current Consumption
Current consumption
ICC
–
0.4
0.7
mA
recessive state;
VTxD = VCC
Current consumption
IS
–
0.5
1.0
mA
recessive state;
VTxD = VCC
Current consumption
ICC
–
0.4
0.8
mA
dominant state;
VTxD = 0 V; without RL
Current consumption
IS
–
Current consumption
ICC
IS
0.4
0.7
mA
power-up mode
–
0.5
1.0
mA
power-up mode,
VCC = 0 V,
VS = 13.5 V
1
3
10
µA
stand-by mode
–
18
40
µA
stand-by mode
Current consumption
Current consumption
Current consumption
Data Sheet
ICC
IS
1.3
8
2.0
mA
dominant state;
VTxD = 0 V; without RL
Rev. 2.1, 2007-08-08
TLE6258-2G
Table 4
Electrical Characteristics (cont’d)
4.5 V < VCC < 5.5 V; 6.0 V < VS < 27 V; RL = 500 Ω; VENN < VENN,ON; -40 °C < Tj < 125
°C; all voltages with respect to ground; positive current flowing into pin; unless otherwise
specified.
Parameter
Symbol
Limit Values
Min.
Typ.
–
2.8
Unit Remark
Max.
Enable Not Input (pin ENN)
HIGH level input voltage
threshold
VENN,off
LOW level input voltage
threshold
VENN,on
ENN input hysteresis
VENN,hys
RENN
ENN pull-up resistance
0.7 × V
low power mode
VCC
0.3 × 2.2
–
V
normal operation
mode
VCC
300
600
900
mV
–
15
30
60
kΩ
–
VRD = 0.8 × VCC
VRD = 0.2 × VCC
Receiver Output RxD
HIGH level output current IRD,H
-1.2
-0.8
-0.5
mA
LOW level output current IRD,L
0.5
0.8
1.2
mA
–
2.9
Transmission Input TxD
HIGH level input voltage
threshold
VTD,H
TxD input hysteresis
VTD,hys
VTD,L
LOW level input voltage
threshold
TxD pull-up current
Data Sheet
0.7 × V
recessive state
VCC
300
700
0.3 × 2.1
900
mV
–
–
V
dominant state
-70
µA
VTxD < 0.3 × VCC
VCC
ITD
-150
-110
9
Rev. 2.1, 2007-08-08
TLE6258-2G
Table 4
Electrical Characteristics (cont’d)
4.5 V < VCC < 5.5 V; 6.0 V < VS < 27 V; RL = 500 Ω; VENN < VENN,ON; -40 °C < Tj < 125
°C; all voltages with respect to ground; positive current flowing into pin; unless otherwise
specified.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit Remark
Bus Receiver
Receiver threshold
voltage, recessive to
dominant edge
Vbus,rd
0.44
× VS
0.48
× VS
–
V
-8 V < Vbus < Vbus,dom
Receiver threshold
voltage, dominant to
recessive edge
Vbus,dr
–
0.56
× VS
0.6 × V
Vbus,rec < Vbus < 20 V
Receiver hysteresis
Vbus,hys
0.02
× VS
0.04
× VS
0.1 × mV
0.475
× VS
0.5 × 0.525
VS
× VS
Receiver threshold center Vbus,cnt
voltage
Input leakage current
Ibus,lek
VS
VS
-1
Vbus,hys = Vbus,rec Vbus,dom
LIN2.0 table 3.1
mA
Vbus = 0V, Vbat = 12V,
pull-up resistor as
specified in LIN2.0
Wake-up threshold
voltage
Vwake
0.40
× VS
0.5 × 0.6 × V
VS
–
VS
Bus Transmitter
Bus recessive output
voltage
Vbus,rec
Bus dominant output
voltage
Vbus,dom
0.9 × –
VS
V
VTxD = VCC
2
V
VTxD = 0 V
VS
0
–
7.3V<VS<27V
0
–
1.2
V
VTxD = 0 V
40
100
150
mA
-1
-
–
mA
–
10
20
µA
Vbus,short = 13.5 V
VCC = 0 V, VS = 0 V,
Vbus = -8 V,
VCC = 0 V,
VS = 13.5V,
Vbus = 20 V,
20
30
47
kΩ
6V<VS<7.3V
Bus short circuit current
Leakage current
Bus pull-up resistance
Data Sheet
Ibus,sc
Ibus,lk
Rbus
10
–
Rev. 2.1, 2007-08-08
TLE6258-2G
Table 4
Electrical Characteristics (cont’d)
4.5 V < VCC < 5.5 V; 6.0 V < VS < 27 V; RL = 500 Ω; VENN < VENN,ON; -40 °C < Tj < 125
°C; all voltages with respect to ground; positive current flowing into pin; unless otherwise
specified.
Parameter
Symbol
Limit Values
Min.
Typ.
Max.
Unit Remark
Dynamic Transceiver Characteristics
1)
Falling edge slew rate
Sbus(L)
-3
-2.0
-1
V/µs
60% > Vbus > 40%
1 µs < (τ = RL × CBUS) < 5 µs;
VCC = 5 V;
VS = 13.5 V
Rising edge slew rate
Sbus(H)
1
1.5
3
V/µs
1)
40% < Vbus < 60%
1 µs < (τ = RL × CBUS) < 5 µs;
VCC = 5 V;
VS = 13.5 V
Slope symmetry
tslopesym
5
-5
µs
Propagation delay
TxD LOW to bus
td(L),T
–
1
3
µs
tfslope - trslope
VS = 18 V
VCC = 5 V
Propagation delay
TxD HIGH to bus
td(H),T
–
1
3
µs
VCC = 5 V
Propagation delay
bus dominant to RxD
LOW
td(L),R
–
1
6
µs
VCC = 5 V;
CRxD = 20 pF
Propagation delay
bus recessive to RxD
HIGH
td(H),R
–
1
6
µs
VCC = 5 V;
CRxD = 20 pF
tsym,R = td(L),R - td(H),R
tsym,T = td(L),T - td(H),T
Receiver delay symmetry tsym,R
-2
–
2
µs
Transmitter delay
symmetry
tsym,T
-2
–
2
µs
Duty cycle D1
tduty1
0.396
–
–
µs
duty cycle 11)
THRec(max) = 0.744 × VS;
THDom(max) = 0.581 × VS;
VS = 7.0 … 18 V;
tbit = 50 µs;
D1 = tbus_rec(min)/2 tbit;
Duty cycle D2
tduty2
–
–
0.581
µs
duty cycle 21)
THRec(max) = 0.422× VS;
THDom(max) = 0.264 × VS
VS = 7.6 … 18 V;
tbit = 50 µs;
D2 = tbus_rec(max)/2 tbit;
Data Sheet
11
Rev. 2.1, 2007-08-08
TLE6258-2G
Table 4
Electrical Characteristics (cont’d)
4.5 V < VCC < 5.5 V; 6.0 V < VS < 27 V; RL = 500 Ω; VENN < VENN,ON; -40 °C < Tj < 125
°C; all voltages with respect to ground; positive current flowing into pin; unless otherwise
specified.
Parameter
Wake-up delay time
Delay time for mode
change
Symbol
twake
Limit Values
Unit Remark
Min.
Typ.
Max.
30
100
150
µs
170
µs
50
µs
tsnorm
Tj < 125 °C
Tj < 150 °C
1) Bus load conditions concerning LIN spec 2.0 Cbus, Rbus = 1 nF, 1 kΩ / 6.8 nF, 660 Ω / 10 nF, 500 Ω
Data Sheet
12
Rev. 2.1, 2007-08-08
TLE6258-2G
VS
ENN
100 nF
TxD
1 kΩ
RxD
20 pF
Bus
CBus
GND
VCC
100 nF
AEA03408.VSD
Figure 4
Test Circuits
VTxD
VCC
GND
VBus
td(L),T
td(H),T
t
VS
VBus,rd
VBus,dr
td(L),R
td(H),R
GND
VRxD
td(L),TR
td(H),TR
VCC
GND
t
0.7 x VCC
0.3 x VCC
t
AET03409.VSD
Figure 5
Data Sheet
Timing Diagram for Dynamic Characteristics
13
Rev. 2.1, 2007-08-08
TLE6258-2G
Application
V Bat LIN Bus
M aster Node
TL E6258 -2G
VS
100
nF
EN N
µP
R xD
1 kΩ
T xD
Bus
GN D
VQ
VI
+
22
µF
100
nF
V CC
100
nF
100
nF
GN D
5V
e. g. T LE 4278
+
GN D
22 µF
EC U 1
Slave N ode
100
nF
TL E6258 -2G
VS
EN N
µP
R xD
T xD
Bus
GN D
VQ
VI
+
22
µF
100
nF
V CC
e. g. T LE 4278
GN D
100
nF
100
nF
GN D
5V
+
22 µF
EC U X
AEA03404.VSD
Figure 6
Data Sheet
Application Circuit
14
Rev. 2.1, 2007-08-08
TLE6258-2G
0.1
2)
0.41+0.1
-0.06
0.2
8
5
1
4
5 -0.2 1)
M
0.19 +0.06
C
B
8 MAX.
1.27
0.35 x 45˚
4 -0.2 1)
1.75 MAX.
0.175 ±0.07
(1.45)
Package Outlines
0.64 ±0.25
6 ±0.2
A B 8x
0.2
M
C 8x
A
Index Marking
1) Does not include plastic or metal protrusion of 0.15 max. per side
2) Lead width can be 0.61 max. in dambar area
GPS01181
Figure 7
PG-DSO-8 (PG-DSO-8-16 Plastic Dual Small Outline)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products
and to be compliant with government regulations the device is available as a green
product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable
for Pb-free soldering according to IPC/JEDEC J-STD-020).
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
Dimensions in mm
SMD = Surface Mounted Device
Data Sheet
15
Rev. 2.1, 2007-08-08
TLE6258-2G
Revision History
Version
Date
Rev. 2.1
2007-08-08 RoHS-compliant version of the TLE6258-2G
• All pages: Infineon logo updated
• Page 3:
added “AEC qualified” and “RoHS” logo, “Green Product
(RoHS compliant)” and “AEC qualified” statement added to
feature list, package name changed to RoHS compliant
versions, package picture updated, ordering code
removed
• Page 15:
Changed package drawing to GPS01181
Package name changed to RoHS compliant versions,
“Green Product” description added
• added Revision History
• updated Legal Disclaimer
Data Sheet
Changes
16
Rev. 2.1, 2007-08-08