TIP41A D

TIP41G, TIP41AG, TIP41BG,
TIP41CG (NPN),
TIP42G,TIP42AG, TIP42BG,
TIP42CG(PNP)
Complementary Silicon
Plastic Power Transistors
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Designed for use in general purpose amplifier and switching
applications.
Features
• Epoxy Meets UL 94 V−0 @ 0.125 in
• These Devices are Pb−Free and are RoHS Compliant*
6 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
40−60−80−100 VOLTS,
65 WATTS
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
Symbol
VCEO
Value
Unit
Vdc
40
60
80
100
VCB
Emitter−Base Voltage
VEB
5.0
Vdc
IC
6.0
Adc
ICM
10
Adc
Base Current
IB
2.0
Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
65
0.52
W
W/°C
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD
2.0
0.016
W
W/°C
Unclamped Inductive Load Energy
(Note 1)
E
62.5
mJ
TJ, Tstg
– 65 to +150
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Collector Current − Peak
Operating and Storage Junction,
Temperature Range
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
October, 2014 − Rev. 11
1
BASE
Vdc
40
60
80
100
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W.
© Semiconductor Components Industries, LLC, 2014
NPN
COLLECTOR
2,4
1
BASE
Collector−Base Voltage
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
Collector Current − Continuous
PNP
COLLECTOR
2,4
1
3
EMITTER
3
EMITTER
4
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
TIP4xxG
AYWW
TIP4xx
xx
A
Y
WW
G
= Device Code
= 1, 1A, 1B, 1C
2, 2A, 2B, 2C
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
Publication Order Number:
TIP41A/D
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RqJC
1.67
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
57
°C/W
Min
Max
Unit
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
TIP41G, TIP42G
TIP41AG, TIP42AG
TIP41BG, TIP42BG
TIP41CG, TIP42CG
VCEO(sus)
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP41G, TIP41AG, TIP42G, TIP42AG
(VCE = 60 Vdc, IB = 0)
TIP41BG, TIP41CG, TIP42BG, TIP42CG
ICEO
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0)
TIP41G, TIP42G
(VCE = 60 Vdc, VEB = 0)
TIP41AG, TIP42AG
(VCE = 80 Vdc, VEB = 0)
TIP41BG, TIP42BG
(VCE = 100 Vdc, VEB = 0)
TIP41CG, TIP42CG
ICES
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
Vdc
40
60
80
100
−
−
−
−
mAdc
−
0.7
−
0.7
mAdc
−
400
−
400
−
400
−
400
−
1.0
30
15
−
75
−
1.5
−
2.0
3.0
−
20
−
mAdc
ON CHARACTERISTICS (Note 2)
hFE
DC Current Gain
(IC = 0.3 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 600 mAdc)
VCE(sat)
Base−Emitter On Voltage
(IC = 6.0 Adc, VCE = 4.0 Vdc)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
MHz
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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2
TA
4.0
TC
80
3.0
60
2.0
40
1.0
20
0
0
TC
TA
20
0
40
60
100
80
T, TEMPERATURE (°C)
120
140
160
Figure 1. Power Derating
VCC
+30 V
25 ms
RC
SCOPE
+11 V
RB
0
-9.0 V
D1
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
-4 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
Figure 2. Switching Time Test Circuit
2.0
TJ = 25°C
VCC = 30 V
IC/IB = 10
1.0
0.7
0.5
t, TIME (s)
μ
PD, POWER DISSIPATION (WATTS)
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
0.3
0.2
tr
0.1
0.07
0.05
0.03
0.02
0.06
td @ VBE(off) ≈ 5.0 V
0.1
0.4 0.6
1.0
0.2
2.0
IC, COLLECTOR CURRENT (AMP)
Figure 3. Turn−On Time
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3
4.0
6.0
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01
0.02
0.05
1.0
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.05
0.2
1.0
0.5
2.0
5.0
t, TIME (ms)
10
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200
500
1.0 k
Figure 4. Thermal Response
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150°C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
10
IC, COLLECTOR CURRENT (AMP)
0.5ms
5.0
1.0ms
3.0
TJ = 150°C
2.0 CURVES APPLY BELOW RATED VCEO
1.0
0.5
SECONDARY BREAKDOWN LTD
BONDING WIRE LTD
THERMAL LIMITATION @ TC = 25°C
(SINGLE PULSE)
0.3
0.2
0.1
5.0
5.0ms
TIP41, TIP42
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
40
10
20
60
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
80 100
Figure 5. Active−Region Safe Operating Area
5.0
300
ts
t, TIME (s)
μ
1.0
TJ = 25°C
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
200
C, CAPACITANCE (pF)
3.0
2.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.06
tf
Cib
100
70
Cob
50
0.1
0.2
0.4 0.6
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
4.0
30
0.5
6.0
Figure 6. Turn−Off Time
1.0
2.0 3.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
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4
30
50
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
hFE, DC CURRENT GAIN
300
200
VCE = 2.0 V
TJ = 150°C
100
70
50
25°C
30
20
10
7.0
5.0
0.06
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
-55°C
1.0
2.0
0.2 0.3 0.4 0.6
IC, COLLECTOR CURRENT (AMP)
0.1
4.0
2.0
TJ = 25°C
1.6
1.2
IC = 1.0 A
0.4
0
6.0
10
θV, TEMPERATURE COEFFICIENTS (mV/°C)
V, VOLTAGE (VOLTS)
1.6
1.2
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 4.0 V
0.4
VCE(sat) @ IC/IB = 10
0.2 0.3 0.4
0.6
1.0
2.0 3.0 4.0
6.0
IC, COLLECTOR CURRENT (A)
μ
50
100
200 300
IB, BASE CURRENT (mA)
500
1000
*APPLIES FOR IC/IB ≤ hFE/4
+1.5
+1.0
+25°C to +150°C
+0.5
*qVC FOR VCE(sat)
0
-55°C to +25°C
-0.5
+25°C to +150°C
-1.0
-1.5
qVB FOR VBE
-55°C to +25°C
-2.0
-2.5
0.06
0.1
0.2 0.3
0.5
1.0
2.0 3.0 4.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
VCE = 30 V
TJ = 150°C
100°C
25°C
100
IC = ICES
10-1
REVERSE
10-3
-0.3 -0.2 -0.1
+2.0
IC, COLLECTOR CURRENT (AMP)
R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
0.1
103
10-2
30
+2.5
TJ = 25°C
101
20
Figure 9. Collector Saturation Region
2.0
102
5.0 A
0.8
Figure 8. DC Current Gain
0
0.06
2.5 A
FORWARD
0
+0.1 +0.2 +0.3 +0.4 +0.5 +0.6
+0.7
6.0
10M
VCE = 30 V
1.0M
IC = 10 x ICES
IC ≈ ICES
100k
10k
IC = 2 x ICES
1.0k
0.1k
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
20
40
60
80
100
120
140
160
VBE, BASE-EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut−Off Region
Figure 13. Effects of Base−Emitter Resistance
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5
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
ORDERING INFORMATION
Device
Package
Shipping
TIP41G
TO−220
(Pb−Free)
50 Units / Rail
TIP41AG
TO−220
(Pb−Free)
50 Units / Rail
TIP41BG
TO−220
(Pb−Free)
50 Units / Rail
TIP41CG
TO−220
(Pb−Free)
50 Units / Rail
TIP42G
TO−220
(Pb−Free)
50 Units / Rail
TIP42AG
TO−220
(Pb−Free)
50 Units / Rail
TIP42BG
TO−220
(Pb−Free)
50 Units / Rail
TIP42CG
TO−220
(Pb−Free)
50 Units / Rail
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6
TIP41G, TIP41AG, TIP41BG, TIP41CG (NPN), TIP42G, TIP42AG, TIP42BG,
TIP42CG (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
F
SEATING
PLANE
C
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
U
1 2 3
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and the
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SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
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or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
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For additional information, please contact your local
Sales Representative
TIP41A/D