Not recommended for new designs – Please use 93LC76C or 93LC86C. 93LC76/86 8K/16K 2.5V Microwire Serial EEPROM Features: PDIP Package 1 CLK DI DO 2 3 4 8 VCC 7 6 5 PE ORG 93LC76/86 CS 93LC76/86 • Single Supply with Programming Operation down to 2.5V • Low-Power CMOS Technology - 1 mA active current typical - 5 A standby current (typical) at 3.0V • ORG Pin Selectable Memory Configuration 1024 x 8 or 512 x 16-Bit Organization (93LC76) 2048 x 8 or 1024 x 16-Bit Organization (93LC86) • Self-Timed Erase and Write Cycles (including auto-erase) • Automatic ERAL before WRAL • Power On/Off Data Protection Circuitry • Industry Standard 3-Wire Serial I/O • Device Status Signal during Erase/Write Cycles • Sequential Read Function • 1,000,000 Erase/Write Cycles Ensured • Data Retention > 200 years • 8-Pin PDIP/SOIC Package • Temperature Ranges Available - Commercial (C) 0°C to +70°C - Industrial (I) -40°C to +85°C Package Types 8 VSS SOIC Package CS CLK DI DO 1 2 3 4 7 6 5 VCC PE ORG VSS Block Diagram VCC VSS Description: Memory Array The Microchip Technology Inc. 93LC76/86 are 8K and 16K low voltage serial Electrically Erasable PROMs. The device memory is configured as x8 or x16 bits depending on the ORG pin setup. Advanced CMOS technology makes these devices ideal for low power nonvolatile memory applications. These devices also have a Program Enable (PE) pin to allow the user to write-protect the entire contents of the memory array. The 93LC76/86 is available in standard 8-pin PDIP and 8-pin surface mount SOIC packages. Address Decoder Address Counter Data Register Output Buffer DO DI PE CS CLK 2010 Microchip Technology Inc. Mode Decode Logic Clock Generator DS21131F-page 1 93LC76/86 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings(†) VCC .............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ........................................................................................................ -0.6V to Vcc + 1.0V Storage temperature ...............................................................................................................................-65°C to +150°C Ambient temperature with power applied ................................................................................................-40°C to +125°C Soldering temperature of leads (10 seconds) .......................................................................................................+300°C ESD protection on all pins ..........................................................................................................................................4 kV † NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. 1.1 AC Test Conditions AC Waveform: VLO = 2.0V VHI = Vcc - 0.2V (Note 1) VHI = 4.0V for (Note 2) Timing Measurement Reference Level Input 0.5 VCC Output 0.5 VCC Note 1: For VCC 4.0V 2: For VCC > 4.0V DS21131F-page 2 2010 Microchip Technology Inc. 93LC76/86 TABLE 1-1: DC CHARACTERISTICS DC CHARACTERISTICS Applicable over recommended operating ranges shown below unless otherwise noted: VCC = +2.5V to +6.0V Commercial (C): TA = 0°C to +70°C Industrial (I): TA = -40°C to +85°C Parameter High-level input voltage Low-level input voltage Low-level output voltage High-level output voltage Input leakage current Output leakage current Pin capacitance (all inputs/outputs) Operating current Standby current Note 1: Symbol Min. Max. Units 2.0 0.7 VCC -0.3 -0.3 — — 2.4 VCC-0.2 -10 -10 — VCC + 1 VCC + 1 0.8 0.2 VCC 0.4 0.2 — — 10 10 7 V V V V V V V V A A pF ICC write ICC read — — ICCS — 3 1 500 100 30 mA mA A A A VIH1 VIH2 VIL1 VIL2 VOL1 VOL2 VOH1 VOH2 ILI ILO CINT Conditions VCC 2.7V VCC < 2.7V VCC 2.7V VCC < 2.7V IOL = 2.1 mA; VCC = 4.5V IOL =100 A; VCC = VCC Min. IOH = -400 A; VCC = 4.5V IOH = -100 A; VCC = VCC Min. VIN = 0.1V to VCC VOUT = 0.1V to VCC (Note 1) TA = +25°C, FCLK = 1 MHz VCC = 5.5V FCLK = 3 MHz; VCC = 5.5V FCLK = 1 MHz; VCC = 3.0V CLK = CS = 0V; VCC = 5.5V CLK = CS = 0V; VCC = 3.0V DI = PE = VSS ORG = VSS or VCC This parameter is periodically sampled and not 100% tested. 2010 Microchip Technology Inc. DS21131F-page 3 93LC76/86 TABLE 1-2: AC CHARACTERISTICS AC CHARACTERISTICS Parameter Applicable over recommended operating ranges shown below unless otherwise noted: VCC = +2.5V to +6.0V Commercial (C): TA = 0°C to +70°C Industrial (I): TA = -40°C to +85°C Symbol Min. Max. Units 3 2 — MHz MHz ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms ms cycles Clock frequency FCLK — Clock high time TCKH Clock low time TCKL Chip select setup time TCSS Chip select hold time Chip select low time Data input setup time TCSH TCSL TDIS Data input hold time TDIH Data output delay time TPD 200 300 100 200 50 100 0 250 50 100 50 100 — Data output disable time TCZ — Status valid time Tsv — Program cycle time TWC TEC TWL — — — — 1M Endurance Note 1: 2: — — — — — — 100 250 100 500 200 300 5 15 30 — Conditions 4.5V VCC 6.0V 2.5V VCC 4.5V 4.5V VCC 6.0V 2.5V VCC 4.5V 4.5V VCC 6.0V 2.5V VCC 4.5V 4.5V VCC 6.0V, Relative to CLK 2.5V VCC 4.5V, Relative to CLK — Relative to CLK 4.5V VCC 6.0V, Relative to CLK 2.5V VCC <4.5V, Relative to CLK 4.5V VCC 6.0V, Relative to CLK 2.5V VCC 4.5V, Relative to CLK 4.5V VCC 6.0V, CL = 100 pF 2.5V VCC < 4.5V, CL = 100 pF 4.5V VCC 6.0V 2.5V VCC < 4.5V (Note 1) 4.5V VCC 6.0V, CL = 100 pF 2.5V VCC <4.5V, CL = 100 pF Erase/Write mode ERAL mode WRAL mode 25°C, Vcc = 5.0V, Block mode (Note 2) This parameter is periodically sampled and not 100% tested. This parameter is not tested but ensured by characterization. For endurance estimates in a specific application, please consult the Total Endurance™ Model which can be obtained from Microchip’s web site at www.microchip.com. DS21131F-page 4 2010 Microchip Technology Inc. 93LC76/86 TABLE 1-3: Instruction READ EWEN ERASE ERAL WRITE WRAL EWDS TABLE 1-4: Instruction READ EWEN ERASE ERAL WRITE WRAL EWDS TABLE 1-5: Instruction READ EWEN ERASE ERAL WRITE WRAL EWDS TABLE 1-6: Instruction READ EWEN ERASE ERAL WRITE WRAL EWDS INSTRUCTION SET FOR 93LC76: ORG=1 (1X16 ORGANIZATION) SB Opcode 1 1 1 1 1 1 1 10 00 11 00 01 00 00 Address X A8 A7 A6 A5 A4 A3 1 1 X X X X X X A8 A7 A6 A5 A4 A3 1 0 X X X X X X A8 A7 A6 A5 A4 A3 0 1 X X X X X 0 0 X X X X X Data In A2 X A2 X A2 X X A1 X A1 X A1 X X A0 X A0 X A0 X X — — — — D15 - D0 D15 - D0 — Req. CLK Cycles Data Out D15 - D0 High-Z (RDY/BSY) (RDY/BSY) (RDY/BSY) (RDY/BSY) High-Z 29 13 13 13 29 29 13 INSTRUCTION SET FOR 93LC76: ORG=0 (X8 ORGANIZATION) SB Opcode 1 1 1 1 1 1 1 10 00 11 00 01 00 00 Address X A9 A8 A7 A6 A5 A4 1 1 X X X X X X A9 A8 A7 A6 A5 A4 1 0 X X X X X X A9 A8 A7 A6 A5 A4 0 1 X X X X X 0 0 X X X X X A3 X A3 X A3 X X A2 X A2 X A2 X X A1 A0 X A1 A0 X A1 A0 X X Data In Data Out — — — — D7 - D0 D7 - D0 — D7 - D0 High-Z (RDY/BSY) (RDY/BSY) (RDY/BSY) (RDY/BSY) High-Z Req. CLK Cycles 22 14 14 14 22 22 14 INSTRUCTION SET FOR 93LC86: ORG=1 (X16 ORGANIZATION) SB Opcode 1 1 1 1 1 1 1 10 00 11 00 01 00 00 Address A9 A8 A7 A6 A5 A4 A3 1 1 X X X X X A9 A8 A7 A6 A5 A4 A3 1 0 X X X X X A9 A8 A7 A6 A5 A4 A3 0 1 X X X X X 0 0 X X X X X Data In A2 X A2 X A2 X X A1 X A1 X A1 X X A0 — X — A0 — X — A0 D15 - D0 X D15 - D0 X — Req. CLK Cycles Data Out D15 - D0 High-Z (RDY/BSY) (RDY/BSY) (RDY/BSY) (RDY/BSY) High-Z 29 13 13 13 29 29 13 INSTRUCTION SET FOR 93LC86: ORG=0 (X8 ORGANIZATION) SB Opcode 1 1 1 1 1 1 1 10 00 11 00 01 00 00 2010 Microchip Technology Inc. Address A10 A9 A8 A7 A6 A5 A4 1 1 X X X X X A10 A9 A8 A7 A6 A5 A4 1 0 X X X X X A10 A9 A8 A7 A6 A5 A4 0 1 X X X X X 0 0 X X X X X A3 X A3 X A3 X X A2 X A2 X A2 X X A1 A0 X A1 A0 X A1 A0 X X Data In Data Out Req. CLK Cycles — — — — D7 - D0 D7 - D0 — D7 - D0 High-Z (RDY/BSY) (RDY/BSY) (RDY/BSY) (RDY/BSY) High-Z 22 14 14 14 22 22 14 DS21131F-page 5 93LC76/86 2.0 PRINCIPLES OF OPERATION When the ORG pin is connected to VCC, the x16 organization is selected. When it is connected to ground, the x8 organization is selected. Instructions, addresses and write data are clocked into the DI pin on the rising edge of the clock (CLK). The DO pin is normally held in a high-Z state except when reading data from the device, or when checking the Ready/Busy status during a programming operation. The Ready/Busy status can be verified during an erase/write operation by polling the DO pin; DO low indicates that programming is still in progress, while DO high indicates the device is ready. The DO will enter the high-impedance state on the falling edge of the CS. 2.1 Start Condition The Start bit is detected by the device if CS and DI are both high with respect to the positive edge of CLK for the first time. Before a Start condition is detected, CS, CLK and DI may change in any combination (except to that of a Start condition), without resulting in any device operation (Read, Write, Erase, EWEN, EWDS, ERAL and WRAL). As soon as CS is high, the device is no longer in the Standby mode. An instruction following a Start condition will only be executed if the required amount of opcode, address and data bits for any particular instruction are clocked in. 2.3 Erase/Write Enable and Disable (EWEN, EWDS) The 93LC76/86 powers up in the Erase/Write Disable (EWDS) state. All programming modes must be preceded by an Erase/Write Enable (EWEN) instruction. Once the EWEN instruction is executed, programming remains enabled until an EWDS instruction is executed or VCC is removed from the device. To protect against accidental data disturb, the EWDS instruction can be used to disable all erase/write functions and should follow all programming operations. Execution of a READ instruction is independent of both the EWEN and EWDS instructions. 2.4 Data Protection During power-up, all programming modes of operation are inhibited until VCC has reached a level greater than 1.4V. During power-down, the source data protection circuitry acts to inhibit all programming modes when VCC has fallen below 1.4V. The EWEN and EWDS commands give additional protection against accidentally programming during normal operation. After power-up, the device is automatically in the EWDS mode. Therefore, an EWEN instruction must be performed before any ERASE or WRITE instruction can be executed. After execution of an instruction (i.e., clock in or out of the last required address or data bit) CLK and DI become “don't care” bits until a new Start condition is detected. 2.2 DI/DO It is possible to connect the Data In and Data Out pins together. However, with this configuration it is possible for a “bus conflict” to occur during the “dummy zero” that precedes the read operation, if A0 is a logic high level. Under such a condition the voltage level seen at Data Out is undefined and will depend upon the relative impedances of Data Out and the signal source driving A0. The higher the current sourcing capability of A0, the higher the voltage at the Data Out pin. DS21131F-page 6 2010 Microchip Technology Inc. 93LC76/86 3.0 DEVICE OPERATION 3.1 READ The READ instruction outputs the serial data of the addressed memory location on the DO pin. A dummy zero bit precedes the 16-bit (x16 organization) or 8-bit (x8 organization) output string. The output data bits will toggle on the rising edge of the CLK and are stable after the specified time delay (TPD). Sequential read is possible when CS is held high and clock transitions continue. The memory Address Pointer will automatically increment and output data sequentially. 3.2 ERASE The ERASE instruction forces all data bits of the specified address to the logical “1” state. The self-timed programming cycle is initiated on the rising edge of CLK as the last address bit (A0) is clocked in. At this point, the CLK, CS and DI inputs become “don’t cares”. The DO pin indicates the Ready/Busy status of the device if the CS is high. The Ready/Busy status will be displayed on the DO pin until the next Start bit is received as long as CS is high. Bringing the CS low will place the device in Standby mode and cause the DO pin to enter the high-impedance state. DO at logical “0” indicates that programming is still in progress. DO at logical “1” indicates that the register at the specified address has been erased and the device is ready for another instruction. The erase cycle takes 3 ms per word (typical). 3.3 WRITE The WRITE instruction is followed by 16 bits (or by 8 bits) of data to be written into the specified address. The self-timed programming cycle is initiated on the rising edge of CLK as the last data bit (D0) is clocked in. At this point, the CLK, CS and DI inputs become “don’t cares”. The DO pin indicates the Ready/Busy status of the device if the CS is high. The Ready/Busy status will be displayed on the DO pin until the next Start bit is received as long as CS is high. Bringing the CS low will place the device in Standby mode and cause the DO pin to enter the high-impedance state. DO at logical “0” indicates that programming is still in progress. DO at logical “1” indicates that the register at the specified address has been written and the device is ready for another instruction. 3.4 Erase All (ERAL) The ERAL instruction will erase the entire memory array to the logical “1” state. The ERAL cycle is identical to the erase cycle except for the different opcode. The ERAL cycle is completely self-timed and commences on the rising edge of the last address bit (A0). Note that the Least Significant 8 or 9 address bits are “don’t care” bits, depending on selection of x16 or x8 mode. Clocking of the CLK pin is not necessary after the device has entered the self clocking mode. The ERAL instruction is ensured at VCC = +4.5V to +6.0V. The DO pin indicates the Ready/Busy status of the device if the CS is high. The Ready/Busy status will be displayed on the DO pin until the next Start bit is received as long as CS is high. Bringing the CS low will place the device in Standby mode and cause the DO pin to enter the high-impedance state. DO at logical “0” indicates that programming is still in progress. DO at logical “1” indicates that the entire device has been erased and is ready for another instruction. The ERAL cycle takes 15 ms maximum (8 ms typical). 3.5 Write All (WRAL) The WRAL instruction will write the entire memory array with the data specified in the command. The WRAL cycle is completely self-timed and commences on the rising edge of the last address bit (A0). Note that the Least Significant 8 or 9 address bits are “don’t cares”, depending on selection of x16 or x8 mode. Clocking of the CLK pin is not necessary after the device has entered the self clocking mode. The WRAL command does include an automatic ERAL cycle for the device. Therefore, the WRAL instruction does not require an ERAL instruction but the chip must be in the EWEN status. The WRAL instruction is ensured at Vcc = +4.5V to +6.0V. The DO pin indicates the Ready/Busy status of the device if the CS is high. The Ready/Busy status will be displayed on the DO pin until the next Start bit is received as long as CS is high. Bringing the CS low will place the device in Standby mode and cause the DO pin to enter the high-impedance state. DO at logical “0” indicates that programming is still in progress. DO at logical “1” indicates that the entire device has been written and is ready for another instruction. The WRAL cycle takes 30 ms maximum (16 ms typical). The write cycle takes 3 ms per word (typical). 2010 Microchip Technology Inc. DS21131F-page 7 93LC76/86 FIGURE 3-1: SYNCHRONOUS DATA TIMING VIH CS TCSS VIL TCKH TCKL TCSH VIH CLK VIL TDIH TDIS VIH DI VIL TPD VOH DO (Read) VOL TCZ TPD TCZ TSV VOH DO (Program) VOL Status Valid The memory automatically cycles to the next register. FIGURE 3-2: READ TCSL CS CLK DI 1 0 AN ... A0 High-impedance DO FIGURE 3-3: 1 0 DN ... D0 DN ... D0 EWEN TCSL CS CLK DI 1 0 0 1 1 X ... X ORG = VCC, 8 X’s ORG = VSS, 9 X’s DS21131F-page 8 2010 Microchip Technology Inc. 93LC76/86 FIGURE 3-4: EWDS TCSL CS CLK DI 1 0 0 0 0 ... X X ORG = VCC, 8 X’s ORG = VSS, 9 X’S FIGURE 3-5: WRITE CS Standby CLK DI 1 0 1 AN ... A0 DN ... D0 TCZ High-impedance DO BUSY Ready TWC FIGURE 3-6: WRAL Standby CS CLK DI 1 0 0 0 1 X ... X DN ... D0 TCZ DO ORG = VCC, 8 X’s ORG = VSS, 9 X’s High-impedance BUSY Ready TWL Ensured at Vcc = +4.5V to +6.0V. 2010 Microchip Technology Inc. DS21131F-page 9 93LC76/86 FIGURE 3-7: ERASE CS Standby CLK DI 1 1 1 ... AN ... A0 TCZ High-impedance DO BUSY Ready TWC FIGURE 3-8: ERAL CS Standby CLK DI 1 0 0 1 0 X ... X TCZ High-impedance BUSY DO ORG=VCC, 8 X’s ORG=VSS, 9 X’s DS21131F-page 10 Ready TEC Ensured at VCC = +4.5V to +6.0V. 2010 Microchip Technology Inc. 93LC76/86 4.0 PIN DESCRIPTIONS TABLE 4-1: PIN FUNCTION TABLE Name Function CS Chip Select CLK Serial Data Clock DI Serial Data Input DO Serial Data Output VSS Ground ORG Memory Configuration PE Program Enable VCC Power Supply 4.1 Chip Select (CS) A high level selects the device. A low level deselects the device and forces it into Standby mode. However, a programming cycle which is already initiated will be completed, regardless of the CS input signal. If CS is brought low during a program cycle, the device will go into Standby mode as soon as the programming cycle is completed. CS must be low for 250 ns minimum (TCSL) between consecutive instructions. If CS is low, the internal control logic is held in a Reset status. 4.2 Serial Clock (CLK) The Serial Clock is used to synchronize the communication between a master device and the 93LC76/86. Opcode, address and data bits are clocked in on the positive edge of CLK. Data bits are also clocked out on the positive edge of CLK. CLK can be stopped anywhere in the transmission sequence (at high or low level) and can be continued anytime with respect to clock high time (TCKH) and clock low time (TCKL). This gives the controlling master freedom in preparing opcode, address and data. CLK is a “don't care” if CS is low (device deselected). If CS is high, but Start condition has not been detected, any number of clock cycles can be received by the device without changing its status (i.e., waiting for Start condition). After detection of a Start condition the specified number of clock cycles (respectively low-to-high transitions of CLK) must be provided. These clock cycles are required to clock in all opcode, address, and data bits before an instruction is executed (see Table 1-3 through Table 1-6 for more details). CLK and DI then become “don't care” inputs waiting for a new Start condition to be detected. Note: 4.3 CS must go low between consecutive instructions, except when performing a sequential read (Refer to Section 3.1 “READ” for more detail on sequential reads). Data In (DI) Data In is used to clock in a Start bit, opcode, address and data synchronously with the CLK input. 4.4 Data Out (DO) Data Out is used in the Read mode to output data synchronously with the CLK input (TPD after the positive edge of CLK). This pin also provides Ready/Busy status information during erase and write cycles. Ready/Busy status information is available when CS is high. It will be displayed until the next Start bit occurs as long as CS stays high. 4.5 Organization (ORG) When ORG is connected to VCC, the x16 memory organization is selected. When ORG is tied to VSS, the x8 memory organization is selected. There is an internal pull-up resistor on the ORG pin that will select x16 organization when left unconnected. 4.6 Program Enable (PE) This pin allows the user to enable or disable the ability to write data to the memory array. If the PE pin is floated or tied to VCC, the device can be programmed. If the PE pin is tied to VSS, programming will be inhibited. There is an internal pull-up on this device that enables programming if this pin is left floating. CLK cycles are not required during the self-timed WRITE (i.e., auto erase/write) cycle. 2010 Microchip Technology Inc. DS21131F-page 11 93LC76/86 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 8-Lead PDIP XXXXXXXX XXXXXNNN YYWW 8-Lead SOIC (.150”) XXXXXXXX XXXXYYWW NNN DS21131F-page 12 Example 93LC76 017 0410 Example 93LC86 /SN0410 017 2010 Microchip Technology Inc. 93LC76/86 /HDG3ODVWLF'XDO,Q/LQH3±PLO%RG\>3',3@ 1RWH )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ N NOTE 1 E1 1 3 2 D E A2 A L A1 c e eB b1 b 8QLWV 'LPHQVLRQ/LPLWV 1XPEHURI3LQV ,1&+(6 0,1 1 120 0$; 3LWFK H 7RSWR6HDWLQJ3ODQH $ ± ± 0ROGHG3DFNDJH7KLFNQHVV $ %DVHWR6HDWLQJ3ODQH $ ± ± 6KRXOGHUWR6KRXOGHU:LGWK ( 0ROGHG3DFNDJH:LGWK ( 2YHUDOO/HQJWK ' 7LSWR6HDWLQJ3ODQH / /HDG7KLFNQHVV F E E H% ± ± 8SSHU/HDG:LGWK /RZHU/HDG:LGWK 2YHUDOO5RZ6SDFLQJ %6& 1RWHV 3LQYLVXDOLQGH[IHDWXUHPD\YDU\EXWPXVWEHORFDWHGZLWKWKHKDWFKHGDUHD 6LJQLILFDQW&KDUDFWHULVWLF 'LPHQVLRQV'DQG(GRQRWLQFOXGHPROGIODVKRUSURWUXVLRQV0ROGIODVKRUSURWUXVLRQVVKDOOQRWH[FHHGSHUVLGH 'LPHQVLRQLQJDQGWROHUDQFLQJSHU$60(<0 %6&%DVLF'LPHQVLRQ7KHRUHWLFDOO\H[DFWYDOXHVKRZQZLWKRXWWROHUDQFHV 0LFURFKLS 7HFKQRORJ\ 'UDZLQJ &% 2010 Microchip Technology Inc. DS21131F-page 13 93LC76/86 /HDG3ODVWLF6PDOO2XWOLQH61±1DUURZPP%RG\>62,&@ 1RWH )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ D e N E E1 NOTE 1 1 2 3 α h b h A2 A c φ L A1 L1 8QLWV 'LPHQVLRQ/LPLWV 1XPEHURI3LQV β 0,//,0(7(56 0,1 1 120 0$; 3LWFK H 2YHUDOO+HLJKW $ ± %6& ± 0ROGHG3DFNDJH7KLFNQHVV $ ± ± 6WDQGRII $ ± 2YHUDOO:LGWK ( 0ROGHG3DFNDJH:LGWK ( %6& 2YHUDOO/HQJWK ' %6& %6& &KDPIHURSWLRQDO K ± )RRW/HQJWK / ± )RRWSULQW / 5() )RRW$QJOH ± /HDG7KLFNQHVV F ± /HDG:LGWK E ± 0ROG'UDIW$QJOH7RS ± 0ROG'UDIW$QJOH%RWWRP ± 1RWHV 3LQYLVXDOLQGH[IHDWXUHPD\YDU\EXWPXVWEHORFDWHGZLWKLQWKHKDWFKHGDUHD 6LJQLILFDQW&KDUDFWHULVWLF 'LPHQVLRQV'DQG(GRQRWLQFOXGHPROGIODVKRUSURWUXVLRQV0ROGIODVKRUSURWUXVLRQVVKDOOQRWH[FHHGPPSHUVLGH 'LPHQVLRQLQJDQGWROHUDQFLQJSHU$60(<0 %6& %DVLF'LPHQVLRQ7KHRUHWLFDOO\H[DFWYDOXHVKRZQZLWKRXWWROHUDQFHV 5() 5HIHUHQFH'LPHQVLRQXVXDOO\ZLWKRXWWROHUDQFHIRULQIRUPDWLRQSXUSRVHVRQO\ 0LFURFKLS 7HFKQRORJ\ 'UDZLQJ &% DS21131F-page 14 2010 Microchip Technology Inc. 93LC76/86 /HDG3ODVWLF6PDOO2XWOLQH61±1DUURZPP%RG\>62,&@ 1RWH )RUWKHPRVWFXUUHQWSDFNDJHGUDZLQJVSOHDVHVHHWKH0LFURFKLS3DFNDJLQJ6SHFLILFDWLRQORFDWHGDW KWWSZZZPLFURFKLSFRPSDFNDJLQJ 2010 Microchip Technology Inc. DS21131F-page 15 93LC76/86 APPENDIX A: REVISION HISTORY Revision E Added note to page 1 header (Not recommended for new designs). Added Section 5.0: Package Marking Information. Added On-line Support page. Updated document format. Revision F Removed Preliminary Status. DS21131F-page 16 2010 Microchip Technology Inc. 93LC76/86 ON-LINE SUPPORT Microchip provides on-line support on the Microchip World Wide Web site. The web site is used by Microchip as a means to make files and information easily available to customers. To view the site, the user must have access to the Internet and a web browser, such as Netscape® or Microsoft® Internet Explorer. Files are also available for FTP download from our FTP site. Connecting to the Microchip Internet Web Site SYSTEMS INFORMATION AND UPGRADE HOT LINE The Systems Information and Upgrade Line provides system users a listing of the latest versions of all of Microchip's development systems software products. Plus, this line provides information on how customers can receive the most current upgrade kits. The Hot Line Numbers are: 1-800-755-2345 for U.S. and most of Canada, and 1-480-792-7302 for the rest of the world. 042003 The Microchip web site is available at the following URL: www.microchip.com The file transfer site is available by using an FTP service to connect to: ftp://ftp.microchip.com The web site and file transfer site provide a variety of services. Users may download files for the latest Development Tools, Data Sheets, Application Notes, User's Guides, Articles and Sample Programs. A variety of Microchip specific business information is also available, including listings of Microchip sales offices, distributors and factory representatives. Other data available for consideration is: • Latest Microchip Press Releases • Technical Support Section with Frequently Asked Questions • Design Tips • Device Errata • Job Postings • Microchip Consultant Program Member Listing • Links to other useful web sites related to Microchip Products • Conferences for products, Development Systems, technical information and more • Listing of seminars and events 2010 Microchip Technology Inc. DS21131F-page 17 93LC76/86 READER RESPONSE It is our intention to provide you with the best documentation possible to ensure successful use of your Microchip product. If you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation can better serve you, please FAX your comments to the Technical Publications Manager at (480) 792-4150. Please list the following information, and use this outline to provide us with your comments about this document. To: Technical Publications Manager RE: Reader Response Total Pages Sent ________ From: Name Company Address City / State / ZIP / Country Telephone: (_______) _________ - _________ FAX: (______) _________ - _________ Application (optional): Would you like a reply? Device: 93LC76/86 Y N Literature Number: DS21131F Questions: 1. What are the best features of this document? 2. How does this document meet your hardware and software development needs? 3. Do you find the organization of this document easy to follow? If not, why? 4. What additions to the document do you think would enhance the structure and subject? 5. What deletions from the document could be made without affecting the overall usefulness? 6. Is there any incorrect or misleading information (what and where)? 7. How would you improve this document? DS21131F-page 18 2010 Microchip Technology Inc. 93LC76/86 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X /XX XXX Device Temperature Range Package Pattern Device 93LC76/86: Microwire Serial EEPROM 93LC76T/86T: Microwire Serial EEPROM (Tape and Reel) Temperature Range Blank I = 0C to = -40C to Package P SN = = +70C +85C Plastic DIP (300 mil Body), 8-lead Plastic SOIC (150 mil Body), 8-lead Sales and Support Data Sheets Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following: 1. 2. 3. Your local Microchip sales office The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277 The Microchip Worldwide Site (www.microchip.com) Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using. New Customer Notification System Register on our web site (www.microchip.com/cn) to receive the most current information on our products. 2010 Microchip Technology Inc. DS21131F-page 19 93LC76/86 NOTES: DS21131F-page 20 2010 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, rfPIC and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Octopus, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, PIC32 logo, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, UniWinDriver, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2010, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. Microchip received ISO/TS-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 2010 Microchip Technology Inc. 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