MPX2202 200 kPa On-Chip Temperature Compensated Silicon

Pressure
Freescale Semiconductor
+
MPX2200
Rev 13, 10/2008
200 kPa On-Chip Temperature
Compensated Silicon
Pressure Sensors
MPX2200
Series
0 to 200 kPa (0 to 29 psi)
40 mV Full Scale Span
(Typical)
The MPX2200 series devices are silicon piezoresistive pressure sensor
providing a highly accurate and linear voltage output directly proportional to
the applied pressure. The sensor is a single monolithic silicon diaphragm with
the strain gauge and a thin-film resistor network integrated on-chip. The chip
is laser trimmed for precise span and offset calibration and temperature
compensation. They are designed for use in applications such as pump/
motor controllers, robotics, level indicators, medical diagnostics, pressure
switching, barometers, altimeters, etc.
Application Examples
•
•
•
•
•
•
•
Features
•
•
•
•
Temperature Compensated Over 0°C to +85°C
±0.25% Linearity (MPX2200D)
Easy-to-Use Chip Carrier Package Options
Absolute, Differential and Gauge Options
Pump/Motor Control
Robotics
Level Detectors
Medical Diagnostics
Pressure Switching
Barometers
Altimeters
ORDERING INFORMATION
Package
Case
Device Name
Options
No.
Unibody Package (MPX2200 Series)
MPX2200A
Tray
344
MPX2200D
Tray
344
MPX2200DP
Tray
344C
MPX2200AP
Tray
344B
MPX2200GP
Tray
344B
None
# of Ports
Single
Dual
Gauge
•
•
Absolute
Device
Marking
•
MPX2200A
•
•
•
•
•
Pressure Type
Differential
•
•
MPX2200AP/GP
CASE 344B-01
© Freescale Semiconductor, Inc., 2006-2008. All rights reserved.
MPX2200AP
MPX2200GP
UNIBODY PACKAGES
MPX2200A/D
CASE 344-15
MPX2200D
MPX2200DP
MPX2200DP
CASE 344C-01
Pressure
Operating Characteristics
Table 1. Operating Characteristics (VS = 10 VDC, TA = 25°C unless otherwise noted, P1 > P2)
Characteristic
Symbol
Min
Typ
Max
Units
POP
0
—
200
kPa
Supply Voltage(2)
VS
—
10
16
VDC
Supply Current
IO
—
6.0
—
mAdc
Full Scale Span(3)
VFSS
38.5
40
41.5
mV
Offset(4)
VOFF
-1.0
—
1.0
mV
Sensitivity
ΔV/ΔΡ
—
0.2
—
mV/kPa
—
-0.25
-1.0
—
—
0.25
1.0
%VFSS
Pressure Hysteresis(0 to 200 kPa)
—
—
±0.1
—
%VFSS
Temperature Hysteresis(- 40°C to +125°C)
—
—
±0.5
—
%VFSS
Temperature Coefficient of Full Scale Span
TCVFSS
-1.0
—
1.0
%VFSS
Temperature Coefficient of Offset
TCVOFF
-1.0
—
1.0
mV
ZIN
1300
—
2500
Ω
ZOUT
1400
—
3000
Ω
Response Time(5) (10% to 90%)
tR
—
1.0
—
ms
Warm-Up Time(6)
—
—
20
—
ms
Offset Stability(7)
—
—
±0.5
—
%VFSS
Differential Pressure Range(1)
Linearity
Input Impedance
Output Impedance
MPX2200D Series
MPX2200A Series
1. 1.0 kPa (kiloPascal) equals 0.145 psi.
2. Device is ratiometric within this specified excitation range. Operating the device above the specified excitation range may induce additional
error due to device self-heating.
3. Full Scale Span (VFSS) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the
minimum rated pressure.
4. Offset (VOFF) is defined as the output voltage at the minimum rated pressure.
5. Response Time is defined as the time for the incremental change in the output to go from 10% to 90% of its final value when subjected to
a specified step change in pressure.
6. Warm-up Time is defined as the time required for the product to meet the specified output voltage after the pressure is stabilized.
7. Offset stability is the product’s output deviation when subjected to 1000 hours of Pulsed Pressure, Temperature Cycling with Bias Test.
MPX2200
2
Sensors
Freescale Semiconductor
Pressure
Maximum Ratings
Table 2. Maximum Ratings(1)
Rating
Max Value
Unit
800
kPa
Storage Temperature
–40 to +125
°C
Operating Temperature
–40 to +125
°C
Maximum Pressure (P1 > P2)
1. Exposure beyond the specified limits may cause permanent damage or degradation to the device.
Voltage Output versus Applied Differential
The output voltage of the differential or gauge sensor
increases with increasing pressure applied to the pressure
side (P1) relative to the vacuum side (P2). Similarly, output
voltage increases as increasing vacuum is applied to the
vacuum side (P2) relative to the pressure side (P1).
Figure 1 shows a block diagram of the internal circuitry on
the stand-alone pressure sensor chip.
VS
3
Thin Film
Temperature
Compensation
and Calibration
Circuitry
Sensing
Element
2
4
+VOUT
–VOUT
1
GND
Figure 1. Temperature Compensated and Calibrated
Pressure Sensor Schematic
MPX2200
Sensors
Freescale Semiconductor
3
Pressure
On-Chip Temperature Compensation and Calibration
VS = 10 VDC
TA = 25°C
P1 > P2
40
35
30
TYP
Span
Range
(TYP)
Output (mVDC)
25
MAX
20
15
MIN
10
5
0
kPa
PSI
-5
0
25
50
7.25
75
100 125
14.5
Pressure
150
21.75
175
Offset
(TYP)
200
29
Figure 2. Output vs. Pressure Differential
Figure 2 shows the output characteristics of the MPX2200
series at 25°C. The output is directly proportional to the
differential pressure and is essentially a straight line.
Silicone Gel
Die Coat
Differential/Gauge
Die
P1
Epoxy
Case
Differential/Gauge Element
P2
Absolute
Die
Silicone Gel
Die Coat
Stainless Steel
Metal Cover
Wire Bond
Lead Frame
The effects of temperature on full scale span and offset are
very small and are shown under Operating Characteristics.
Bond
Die
Stainless Steel
Metal Cover
P1
Epoxy
Case
Wire Bond
Lead Frame
Die
Bond
Absolute Element
P2
Figure 3. Cross Sectional Diagram (not to scale)
LINEARITY
Linearity refers to how well a transducer's output follows
the equation: VOUT = VOFF + sensitivity x P over the operating
pressure range. There are two basic methods for calculating
nonlinearity: (1) end point straight line fit (see Figure 4) or
(2) a least squares best line fit. While a least squares fit gives
the “best case” linearity error (lower numerical value), the
calculations required are burdensome.
Conversely, an end point fit will give the “worst case” error
(often more desirable in error budget calculations) and the
calculations are more straightforward for the user.
Freescale’s specified pressure sensor linearities are based
on the end point straight line method measured at the
midrange pressure.
Least
Square
Deviation
Least Squares Fit
Relative Voltage Output
Figure 3 illustrates the differential/gauge die in the basic
chip carrier (Case 344). A silicone gel isolates the die surface
and wire bonds from the environment, while allowing the
pressure signal to be transmitted to the silicon diaphragm.
The MPX2200 series pressure sensor operating
characteristics and internal reliability and qualification tests
are based on use of dry air as the pressure media. Media
other than dry air may have adverse effects on sensor
performance and long term reliability. Contact the factory for
information regarding media compatibility in your application.
Exaggerated
Performance
Curve
Straight Line
Deviation
End Point Straight
Line Fit
Offset
0
50
Pressure (% Full Scale)
100
Figure 4. Linearity Specification Comparison
MPX2200
4
Sensors
Freescale Semiconductor
Pressure
PRESSURE (P1)/VACUUM (P2) SIDE IDENTIFICATION TABLE
Freescale designates the two sides of the pressure sensor
as the Pressure (P1) side and the Vacuum (P2) side. The
Pressure (P1) side is the side containing silicone gel which
isolates the die from the environment. The Freescale MPX
pressure sensor is designed to operate with positive
differential pressure applied, P1 > P2.
The Pressure (P1) side may be identified by using the
following table.
Table 3. Pressure (P1) Side Delineation
Part Number
Case Type
Pressure (P1) Side Identifier
MPX2200D/A
344
Stainless Steel Cap
MPX2200DP
344C
Side with Part Marking
MPX2200GP/AP
344B
Side with Port Attached
MPX2200
Sensors
Freescale Semiconductor
5
PACKAGE DIMENSIONS
C
R
M
1
B
2
-A-
3
Z
4
DIM
A
B
C
D
F
G
J
L
M
N
R
Y
Z
N
L
1 2 3 4
PIN 1
-TSEATING
PLANE
J
F
G
F
Y
D 4 PL
0.136 (0.005)
STYLE 1:
PIN 1.
2.
3.
4.
M
T A
DAMBAR TRIM ZONE:
THIS IS INCLUDED
WITHIN DIM. "F" 8 PL
M
STYLE 2:
PIN 1.
2.
3.
4.
GROUND
+ OUTPUT
+ SUPPLY
- OUTPUT
STYLE 3:
PIN 1.
2.
3.
4.
VCC
- SUPPLY
+ SUPPLY
GROUND
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION -A- IS INCLUSIVE OF THE MOLD
STOP RING. MOLD STOP RING NOT TO EXCEED
16.00 (0.630).
INCHES
MILLIMETERS
MIN
MAX MIN
MAX
0.595
0.630 15.11
16.00
0.514
0.534 13.06
13.56
0.200
0.220
5.08
5.59
0.016
0.020
0.41
0.51
0.048
0.064
1.22
1.63
0.100 BSC
2.54 BSC
0.014
0.016
0.36
0.40
0.695
0.725 17.65
18.42
30˚ NOM
30˚ NOM
0.475
0.495 12.07
12.57
0.430
0.450 10.92
11.43
0.048
0.052
1.22
1.32
0.106
0.118
2.68
3.00
GND
-VOUT
VS
+VOUT
CASE 344-15
ISSUE AA
UNIBODY PACKAGE
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
-A-
-T-
U
L
R
H
N
PORT #1
POSITIVE
PRESSURE
(P1)
-Q-
B
1 2 3 4
PIN 1
K
-P0.25 (0.010)
J
M
T Q
S
S
F
C
G
D 4 PL
0.13 (0.005)
M
T S
S
Q
S
DIM
A
B
C
D
F
G
H
J
K
L
N
P
Q
R
S
U
INCHES
MILLIMETERS
MIN
MAX
MIN
MAX
1.145
1.175
29.08
29.85
0.685
0.715
17.40
18.16
0.305
0.325
7.75
8.26
0.016
0.020
0.41
0.51
0.048
0.064
1.22
1.63
0.100 BSC
2.54 BSC
0.182
0.194
4.62
4.93
0.014
0.016
0.36
0.41
0.695
0.725
17.65
18.42
0.290
0.300
7.37
7.62
0.420
0.440
10.67
11.18
0.153
0.159
3.89
4.04
0.153
0.159
3.89
4.04
0.230
0.250
5.84
6.35
0.220
0.240
5.59
6.10
0.910 BSC
23.11 BSC
STYLE 1:
PIN 1. GROUND
2. + OUTPUT
3. + SUPPLY
4. - OUTPUT
CASE 344B-01
ISSUE B
UNIBODY PACKAGE
MPX2200
6
Sensors
Freescale Semiconductor
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
-AU
V
PORT #1
R
W
L
H
PORT #2
PORT #1
POSITIVE PRESSURE
(P1)
PORT #2
VACUUM
(P2)
N
-QB
SEATING
PLANE
SEATING
PLANE
1 2 3 4
PIN 1
K
-P-T-
-T-
0.25 (0.010)
M
T Q
S
S
F
J
G
D 4 PL
C
0.13 (0.005)
M
T S
S
Q
S
DIM
A
B
C
D
F
G
H
J
K
L
N
P
Q
R
S
U
V
W
INCHES
MILLIMETERS
MIN
MAX
MIN MAX
1.145
1.175
29.08 29.85
0.685
0.715
17.40 18.16
0.405
0.435
10.29 11.05
0.016
0.020
0.41
0.51
0.048
0.064
1.22
1.63
0.100 BSC
2.54 BSC
0.182
0.194
4.62
4.93
0.014
0.016
0.36
0.41
0.695
0.725
17.65 18.42
0.290
0.300
7.37
7.62
0.420
0.440
10.67 11.18
0.153
0.159
3.89
4.04
0.153
0.159
3.89
4.04
0.063
0.083
1.60
2.11
0.220
0.240
5.59
6.10
0.910 BSC
23.11 BSC
0.248
0.278
6.30
7.06
0.310
0.330
7.87
8.38
STYLE 1:
PIN 1.
2.
3.
4.
GROUND
+ OUTPUT
+ SUPPLY
- OUTPUT
CASE 344C-01
ISSUE B
UNIBODY PACKAGE
MPX2200
Sensors
Freescale Semiconductor
7
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MPX2200
Rev. 13
10/2008
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