Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC-AUH320 v04.0412 Linear & Power Amplifiers - CHIP GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 86 GHz Typical Applications Features This HMC-AUH320 is ideal for: Gain: 16 dB @ 74 GHz • Short Haul / High Capacity Links P1dB: +15 dBm • Wireless LAN Bridges Supply Voltage: +4V • Automotive Radar 50 Ohm Matched Input/Output • Military & Space Die Size: 2.20 x 0.87 x 0.1 mm • E-Band Communication Systems General Description Functional Diagram The HMC-AUH320 is a high dynamic range, four stage GaAs HEMT MMIC Medium Power Amplifier which operates between 71 and 86 GHz. The HMC-AUH320 provides 16 dB of gain at 74 GHz, and an output power of +15 dBm at 1 dB compression from a +4V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation. The HMC-AUH320 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and RF probes contacting the die pads. Electrical Specifications, TA = +25° C, Vdd1=Vdd2 = 4V, Idd1+Idd2 = 130mA [2] Parameter Min. Frequency Range Gain Input Return Loss 10 Typ. Max. Units 71 - 86 GHz 16 dB 4 dB Output Return Loss 6 dB Output power for 1dB Compression (P1dB) 15 dBm Saturated Output Power (Psat) 16 dBm Supply Current (Idd1+Idd2) 130 mA [1] Unless otherwise indicated, all measurements are from probed die [2] Adjust Vgg between -0.8V to +0.3V (typ -0.1V) to achieve Idd1 = 40mA, Idd 2 = 90mA or Iddtotal = 130 mA. 1 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC-AUH320 v04.0412 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 86 GHz 22 20 18 POUT (dBm) GAIN (dB) 24 16 12 14 P1dB P3dB Psat 10 8 6 70 72 74 76 78 80 82 84 86 88 70 74 FREQUENCY (GHz) Input Return Loss vs. Frequency 82 86 90 Output Return Loss vs. Frequency -2 OUTPUT RETURN LOSS (dB) -2 INPUT RETURN LOSS (dB) 78 FREQUENCY (GHz) -6 -10 -14 -18 -6 -10 -14 -18 70 72 74 76 78 80 82 FREQUENCY (GHz) 84 86 88 70 72 74 76 78 80 82 84 86 88 Linear & Power Amplifiers - CHIP Fixtured Output Power vs. Frequency Linear Gain vs. Frequency FREQUENCY (GHz) Note: Measured Performance Characteristics (Typical Performance at 25°C) Vdd1 = Vdd2 = 4V and Idd1 = 40mA, Idd2 = 90mA For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 2 HMC-AUH320 v04.0412 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 86 GHz Linear & Power Amplifiers - CHIP Absolute Maximum Ratings Drain Bias Voltage +4.5 Vdc Gate Bias Voltage -0.8 to +0.3 Vdc Thermal Resistance (Channel to die bottom) 92.1 °C/W Channel Temperature 180 °C Storage Temperature -65 °C to +150 °C Operating Temperature -55 °C to +85 °C Drain Bias Current (Idd1) 50mA Drain Bias Current (Idd2) 100mA Outline Drawing Die Packaging Information [1] Standard GP-2 (Gel Pack) Alternate [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 3 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM]. 2. TYPICAL BOND PAD IS .004” SQUARE. 3. BACKSIDE METALLIZATION: GOLD. 4. BACKSIDE METAL IS GROUND. 5. BOND PAD METALLIZATION: GOLD. 6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 7. OVERALL DIE SIZE ±.002” 8. DIE THICKNESS = .004” For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC-AUH320 v04.0412 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 86 GHz Pad Descriptions Function Description 1 RFIN This pad is DC coupled (for ESD) and matched to 50 Ohms. 2, 3 Vdd1, Vdd2 Power Supply Voltage for the amplifier. See assembly for required external components. 4 RFOUT This pad is AC coupled and matched to 50 Ohms. 5 Vgg Gate control for amplifier. See Assembly Drawing for required external components. Please follow “MMIC Amplifier Biasing Procedure” application note. Die Bottom GND Die bottom must be connected to RF/DC ground. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Linear & Power Amplifiers - CHIP Pad Number 4 HMC-AUH320 v04.0412 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 86 GHz Linear & Power Amplifiers - CHIP Assembly Diagram Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output. 5 For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC-AUH320 v04.0412 GaAs HEMT MMIC MEDIUM POWER AMPLIFIER, 71 - 86 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: strikes. Follow ESD precautions to protect against ESD Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup. 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane 0.150mm (0.005”) Thick Moly Tab 0.254mm (0.010” Thick Alumina Thin Film Substrate Figure 2. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Linear & Power Amplifiers - CHIP The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 6