Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com Report Title: Qualification Test Report Report Type: See Attached Date: See Attached Rev: 05 QTR: 2013- 00269 Wafer Process: PHEMT-F HMC368 HMC383 HMC441 HMC442 HMC448 HMC449 HMC451 HMC459 HMC460 HMC462 HMC463 HMC464 HMC465 HMC490 HMC498 HMC499 HMC559 HMC561 HMC562 HMC573 HMC575 HMC576 HMC577 HMC578 HMC579 HMC594 HMC598 HMC608 HMC609 HMC633 HMC634 HMC635 HMC636 HMC639 HMC659 HMC693 HMC694 HMC709 HMC751 HMC752 HMC814 HMC815 HMC819 HMC870 HMC871 HMC924 HMC925 HMC942 HMC996 HMC997 HMC1082 HMC6187 QTR: 2013- 00269 Wafer Process: PHEMT-F Rev: 05 Introduction The testing performed for this report is designed to accelerate the predominant failure mode, electro-migration (EM), for the devices under test. The devices are stressed at high temperature and DC biased to simulate a lifetime of use at typical operating temperatures. Using the Arrhenius equation, the acceleration factor (AF) is calculated for the stress testing based on the stress temperature and the typical use operating temperature. This report is intended to summarize all of the High Temperature Operating Life Test (HTOL) data for the PHEMT-F process. The FIT/MTTF data contained in this report includes all the stress testing performed on this process to date and will be updated periodically as additional data becomes available. Data sheets for the tested devices can be found at www.hittite.com. Glossary of Terms & Definitions: 1. HAST: Highly Accelerated Stress Test (biased). Devices are subjected to 96 hours of 85% relative humidity at a temperature of 130°C and pressure (18.6 PSIG), while DC biased. This test is performed in accordance with JESD22-A110. 2. HTOL: High Temperature Operating Life. This test is used to determine the effects of bias conditions and temperature on semiconductor devices over time. It simulates the devices’ operating condition in an accelerated way, through high temperature and/or bias voltage, and is primarily for device qualification and reliability monitoring. This test was performed in accordance with JEDEC JESD22-A108. 3. HTSL: High Temperature Storage Life. Devices are subjected to 1000 hours at 150oC per JESD22-A103. 4. MSL: Moisture sensitivity level pre-conditioning is performed per JESD22-A113. 5. Operating Junction Temp (Toj): Temperature of the die active circuitry during typical operation. 6. Stress Junction Temp (Tsj): Temperature of the die active circuitry during stress testing. 7. Temperature Cycle: Cond C (-65°C to 150°C), 500 cycles per JESD22-A104. 8. UHAST: Unbiased Highly Accelerated Stress Test. Devices are subjected to 96 hours of 85% relative humidity at a temperature of 130°C and pressure (18.6 PSIG). This test is performed in accordance with JESD22-A118. Rev: 05 QTR: 2013- 00269 Wafer Process: PHEMT-F Qualification Sample Selection: All qualification devices used were manufactured and tested on standard production processes and met pre-stress acceptance test requirements. Summary of Qualification Tests: HMC441 (QTR04006) QTY IN 11 24 QTY OUT 11 24 Burn-in 240 hours 11 11 Complete Interim Test 11 11 Pass 11 24 11 24 11 24 11 24 Pass Pass Pass Pass Bond Pull 10 10 Pass Die Shear 10 10 Pass SEM Inspection 5 5 Pass Metal and Dielectric Thickness 5 5 Pass TEST Initial electrical Test HTOL 1000 hours Final Electrical PASS/FAIL Complete NOTES HMC441Ceram HMC441LP3 HMC441 Die Rev: 05 QTR: 2013- 00269 Wafer Process: PHEMT-F HMC463 (Internal) QTY IN 402 20 QTY OUT 402 20 Burn-in 240 hours 402 402 Complete Post 240 hour Test 402 402 Pass HTOL 1000 hours 20 20 Final Electrical 20 20 QTY IN 14 QTY OUT 14 HTOL, 1072 hours 14 14 Complete Post HTOL Electrical test 14 14 Pass TEST Initial Electrical Test PASS/FAIL Complete NOTES HMC463 Pass Pass Pass Pass HMC441 (QTR11007) TEST Initial electrical Test PASS/FAIL Pass NOTES Rev: 05 QTR: 2013- 00269 Wafer Process: PHEMT-F HMC490 (QTR2011-00010) QTY IN 326 QTY OUT 326 MSL-1 160 160 Complete Final Electrical Test 160 160 Pass UHAST 77 77 Complete Final electrical Test 77 75 Pass Temp. Cycle 77 77 Complete Final electrical Test 154 154 Pass HTSL 77 77 Complete Final Electrical Test 77 77 Pass HTOL, 1000 hours 77 77 Pass Final Electrical test 77 77 Pass Physical Dimensions 22 22 Pass Solderability 22 22 Pass ESD Exposure 18 18 Complete Electrical Test 18 18 Complete TEST Initial electrical Test PASS/FAIL NOTES PASS/FAIL * 2 device fail (Note 1) HBM Class 0 Rev: 05 QTR: 2013- 00269 Wafer Process: PHEMT-F HMC6445 (QTR2012-00021) QTY IN 352 QTY OUT 352 Preconditioned to MSL-1 158 158 Complete Final Electrical Test – Post MSL1 158 158 Pass HAST 78 78 Complete Final electrical Test – Post HAST 78 78 Pass Temp. Cycle 80 80 Complete Final electrical Test - Post T/C 80 80 Pass HTSL 80 80 Complete Final Electrical Test – Post HTSL 80 80 Pass HTOL, 1000 hours 78 78 Complete Final Electrical test – Post HTOL 78 78 Pass Physical Dimensions 15 15 Pass Solderability 6 6 Pass ESD Exposure 36 36 Complete Electrical Test 36 36 Complete TEST Initial electrical Test PASS/FAIL NOTES Pass HBM Class 0 CDM Class IV MM Class M1 (ESDA) Rev: 05 QTR: 2013- 00269 Wafer Process: PHEMT-F HMC996 (QTR2012-00027) QTY IN 354 QTY OUT 354 MSL-1 240 240 Complete Final Electrical Test – Post MSL-1 240 240 Pass UHAST 80 80 Complete Final electrical Test - Post UHAST 80 80 Pass Temp. Cycle 80 80 Complete Final electrical Test – Post T/C 80 80 Pass HAST 80 80 Complete Final electrical Test - Post HAST 80 80 Pass HTSL 80 80 Complete Final Electrical Test – Post HTSL 80 80 Pass TEST Initial electrical Test PASS/FAIL NOTES Pass Preconditioned Preconditioned Preconditioned Standard duration prior to additional 504 hours at multiple Temperatures. HTOL – 1000 hours @ Tj=175ºC 78 78 Complete Final Electrical Test – Post HTOL 78 78 Pass Physical Dimensions 15 15 Pass Solderability 15 15 Pass ESD Exposure 36 36 Complete Class 6 Complete CDM Class 6 HBM Class 1A MM Class 0 Post ESD Electrical Test 36 36 Rev: 05 QTR: 2013- 00269 Wafer Process: PHEMT-F HMC996 (QTR2012-00027, Cont.) QTY IN 25 QTY OUT 25 HTOL – 168 hours @ Tj=200ºC 25 25 Complete Post HTOL Electrical test 25 25 Pass QTY IN 25 QTY OUT 25 HTOL – 192 hours @ Tj=225ºC 25 25 Complete Post HTOL Electrical test 25 25 Pass QTY IN 24 QTY OUT 24 HTOL – 168 hours @ Tj=205ºC 24 24 Complete Post HTOL Electrical test 24 24 Pass TEST Initial electrical Test PASS/FAIL NOTES Pass HMC996 (QTR2012-00027, Cont.) TEST Initial electrical Test PASS/FAIL NOTES Pass HMC996 (QTR2012-00027, Cont.) TEST Initial electrical Test PASS/FAIL Pass NOTES Rev: 05 QTR: 2013- 00269 Wafer Process: PHEMT-F HMC996 (QTR2012-00027, Cont.) QTY IN 24 QTY OUT 24 HTOL – 168 hours @ Tj=215ºC 24 24 Complete Post HTOL Electrical test 24 24 Pass QTY IN 24 QTY OUT 24 HTOL – 168 hours @ Tj=210ºC 24 24 Complete Post HTOL Electrical test 24 24 Pass QTY IN 24 QTY OUT 24 HTOL – 168 hours @ Tj=215ºC 24 24 Complete Post HTOL Electrical test 24 24 Pass TEST Initial electrical Test PASS/FAIL NOTES Pass HMC996 (QTR2012-00027, Cont.) TEST Initial electrical Test PASS/FAIL NOTES Pass HMC996 (QTR2012-00027, Cont.) TEST Initial electrical Test PASS/FAIL Pass NOTES Rev: 05 QTR: 2013- 00269 Wafer Process: PHEMT-F HMC383 (QTR2012-00320) Initial electrical Test QTY IN 378 QTY OUT 378 MSL-1 Precondition 158 158 Complete Post MSL1 Electrical Test 158 158 Pass UHAST (preconditioned) 79 79 Complete Post UHAST electrical Test 79 79 Pass Temp. Cycle (preconditioned) 79 79 Complete Post Temp Cycle electrical Test 79 79 Pass HTSL 80 80 Complete Post HTSL Electrical Test 80 80 Pass HTOL– 1000 hours @ Tj=175ºC 80 80 Complete Post HTOL Electrical test 80 80 Pass Physical Dimensions 15 15 Pass Solderability 6 6 Pass ESD Exposure 39 39 Complete Class 6 Post ESD Electrical Test 39 39 Complete CDM Class III HBM Class 1B MM Pass 50V TEST PASS/FAIL NOTES Pass Rev: 05 QTR: 2013- 00269 Wafer Process: PHEMT-F HMC814 (QTR2012-00321) Initial electrical Test QTY IN 361 QTY OUT 361 MSL-1 Precondition 156 156 Complete Post MSL1 Electrical Test 156 156 Pass UHAST (preconditioned) 78 78 Complete Post UHAST electrical Test 78 78 Pass Temp. Cycle (preconditioned) 78 78 Complete Post Temp Cycle electrical Test 78 78 Pass HTSL 80 80 Complete Post HTSL Electrical Test 80 80 Pass HTOL– 1000 hours @ Tj=175ºC 77 77 Complete Post HTOL Electrical test 77 77 Pass Physical Dimensions 15 15 Pass Solderability 6 6 Pass X-Ray 6 6 Pass ESD Exposure 27 27 Complete Post ESD Electrical Test 27 27 Complete TEST PASS/FAIL NOTES Pass HBM Class 0 CDM Class IV Rev: 05 QTR: 2013- 00269 Wafer Process: PHEMT-F HMC451 (QTR2012-00325) Initial electrical Test QTY IN 377 QTY OUT 377 MSL-3 Precondition 160 160 Complete Post MSL3 Electrical Test 160 160 Pass UHAST (preconditioned) 80 80 Complete Post UHAST electrical Test 80 80 Pass Temp. Cycle (preconditioned) 80 80 Complete Post Temp Cycle electrical Test 80 80 Pass HTSL 80 80 Complete Post HTSL Electrical Test 80 80 Pass HTOL– 1000 hours @ Tj=175ºC 80 80 Complete Post HTOL Electrical test 80 80 Pass Physical Dimensions 15 15 Pass Solderability 6 6 Pass ESD Exposure 36 36 Complete Post ESD Electrical Test 36 24 Complete TEST PASS/FAIL NOTES Pass HBM Class1A CDM Class III MM Pass 50V Rev: 05 QTR: 2013- 00269 Wafer Process: PHEMT-F HMC2168 (QTR2013-00339) QTY IN 81 QTY OUT 81 HTOL– 1000 hours @ Tj=150ºC 81 81 Complete Post HTOL Electrical test 81 81 Pass TEST Initial electrical Test PASS/FAIL NOTES Pass HMC6XXX (QTR2013-00340) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 6 6 Complete HTOL, 5039 hours 6 6 Complete Post HTOL Electrical Test 6 6 Pass NOTES HMC6XXX (QTR2013-00340) TEST QTY IN QTY OUT PASS / FAIL Initial Electrical 14 14 Complete HTOL, 2000 hours 14 14 Complete Post HTOL Electrical Test 14 14 Pass NOTES QTR: 2013- 00269 Wafer Process: PHEMT-F Rev: 05 PHEMT-F Failure Rate Estimate Based on the HTOL test results, a failure rate estimation was determined using the following parameters: With Device Case Temp, Tc = 85°C HMC441 (QTR04006) Operating Junction Temp (Toj) = 85°C(358°K) Stress Junction Temp (Tsj) = 105°C(378°K) HMC441 (QTR04006, cont.) Operating Junction Temp (Toj) = 85°C(358°K) Stress Junction Temp (Tsj) = 125°C(398°K) HMC463 (Internal) Operating Junction Temp (Toj) = 85°C(358°K) Stress Junction Temp (Tsj) = 125°C(398°K) HMC441 (QTR11007) Operating Junction Temp (Toj) = 85°C(358°K) Stress Junction Temp (Tsj) = 125°C(398°K) HMC490 (QTR2011-00010) Operating Junction Temp (Toj) = 148°C(421°K) Stress Junction Temp (Tsj) = 150°C(423°K) HMC6445 (QTR2012-00021) Operating Junction Temp (Toj) = 119°C(392°K) Stress Junction Temp (Tsj) = 150°C(423°K) HMC996 (QTR2012-00027) Operating Junction Temp (Toj) = 137°C(410°K) Stress Junction Temp (Tsj) = 175°C(448°K) HMC996 (QTR2012-00027, Cont.) Operating Junction Temp (Toj) = 137°C(410°K) QTR: 2013- 00269 Wafer Process: PHEMT-F Stress Junction Temp (Tsj) = 200°C(473°K) HMC996 (QTR2012-00027, Cont.) Operating Junction Temp (Toj) = 137°C(410°K) Stress Junction Temp (Tsj) = 225°C(498°K) HMC996 (QTR2012-00027, Cont.) Operating Junction Temp (Toj) = 137°C(410°K) Stress Junction Temp (Tsj) = 205°C(478°K) HMC996 (QTR2012-00027, Cont.) Operating Junction Temp (Toj) = 137°C(410°K) Stress Junction Temp (Tsj) = 215°C(488°K) HMC996 (QTR2012-00027, Cont.) Operating Junction Temp (Toj) = 137°C(410°K) Stress Junction Temp (Tsj) = 210°C(483°K) HMC996 (QTR2012-00027, Cont.) Operating Junction Temp (Toj) = 137°C(410°K) Stress Junction Temp (Tsj) = 215°C(488°K) HMC383 (QTR2012-00320) Operating Junction Temp (Toj) = 142°C(415°K) Stress Junction Temp (Tsj) = 175°C(448°K) HMC814 (QTR2012-00321) Operating Junction Temp (Toj) = 138°C(411°K) Stress Junction Temp (Tsj) = 175°C(448°K) HMC451 (QTR2012-00325) Operating Junction Temp (Toj) = 137°C(410°K) Stress Junction Temp (Tsj) = 175°C(448°K) HMC2168 (QTR2013-00339) Operating Junction Temp (Toj) = 117°C(390°K) Stress Junction Temp (Tsj) = 150°C(423°K) Rev: 05 QTR: 2013- 00269 Wafer Process: PHEMT-F HMC6XXX (QTR2013-00340) Operating Junction Temp (Toj) = 133.6°C(406.6°K) Stress Junction Temp (Tsj) = 149.4°C(422.4°K) Device hours: HMC441 (QTR04006) = (11 X 1240hrs) = 13,640 hours HMC441 (QTR04006) = (24 X 1000hrs) = 24,000 hours HMC463 (Internal) = (402 X 240hrs) = 96,480 hours HMC463 (Internal) = (20 X 1000hrs) = 20,000 hours HMC441 (QTR11007) = (14 X 1072hrs) = 15,008 hours HMC490 (QTR2011-00010) = (77 X 1000hrs) = 77,000 hours HMC6445 (QTR2012-00021) = (78 X 1000hrs) = 78,000 hours HMC996 (QTR2012-00027) = (78 X 1000hrs) = 78,000 hours HMC996 (QTR2012-00027, Cont.) = (25 X 168hrs) = 4,200 hours HMC996 (QTR2012-00027, Cont.) = (25 X 192hrs) = 4,800 hours HMC996 (QTR2012-00027, Cont.) = (24 X 168hrs) = 4,032 hours HMC996 (QTR2012-00027, Cont.) = (24 X 168hrs) = 4,032 hours HMC996 (QTR2012-00027, Cont.) = (24 X 168hrs) = 4,032 hours HMC996 (QTR2012-00027, Cont.) = (24 X 168hrs) = 4,032 hours HMC383 (QTR2012-00320) = (80 X 1000hrs) = 80,000 hours HMC814 (QTR2012-00321) = (77 X 1000hrs) = 77,000 hours HMC451 (QTR2012-00325) = (80 X 1000hrs) = 80,000 hours HMC2168 (QTR2013-00339) = (81 X 1000hrs) = 81,000 hours HMC6XXX (QTR2013-00340) = (6 X 5039hrs) = 30,234 hours HMC6XXX (QTR2013-00340) = (14 X 2000hrs) = 28,000 hours Rev: 05 QTR: 2013- 00269 Wafer Process: PHEMT-F Rev: 05 For PHEMT-F MMIC, Activation Energy = 1.57 eV Acceleration Factor (AF): HMC441 (QTR04006) Acceleration Factor = exp[1.57/8.6x10-5(1/358-1/378)] = 14.9 HMC441 (QTR04006) Acceleration Factor = exp[1.57/8.6x10-5(1/358-1/398)] = 168.2 HMC463 (Internal) Acceleration Factor = exp[1.57/8.6x10-5(1/358-1/398)] = 168.2 HMC441 (QTR11007) Acceleration Factor = exp[1.57/8.6x10-5(1/358-1/398)] = 168.2 HMC490 (QTR2011-00010) Acceleration Factor = exp[1.57/8.6x10-5(1/421-1/423)] = 1.2 HMC6445 (QTR2012-00021) Acceleration Factor = exp[1.57/8.6x10-5(1/392-1/423)] = 30.4 HMC996 (QTR2012-00027) Acceleration Factor = exp[1.57/8.6x10-5(1/410-1/448)] = 43.7 HMC996 (QTR2012-00027, Cont.) Acceleration Factor = exp[1.57/8.6x10-5(1/410-1/473)] = 376.4 HMC996 (QTR2012-00027, Cont.) Acceleration Factor = exp[1.57/8.6x10-5(1/410-1/498)] = 2612.6 HMC996 (QTR2012-00027, Cont.) Acceleration Factor = exp[1.57/8.6x10-5(1/410-1/478)] = 563.6 HMC996 (QTR2012-00027, Cont.) Acceleration Factor = exp[1.57/8.6x10-5(1/410-1/488)] = 1232.6 HMC996 (QTR2012-00027, Cont.) Acceleration Factor = exp[1.57/8.6x10-5(1/410-1/483)] = 836.9 HMC996 (QTR2012-00027, Cont.) Acceleration Factor = exp[1.57/8.6x10-5(1/410-1/488)] = 1232.6 HMC383 (QTR2012-00320) Acceleration Factor = exp[1.57/8.6x10-5(1/415-1/448)] = 25.5 HMC814 (QTR2012-00321) Acceleration Factor = exp[1.57/8.6x10-5(1/411-1/448)] = 39.2 HMC451 (QTR2012-00325) Acceleration Factor = exp[1.57/8.6x10-5(1/410-1/448)] = 43.7 HMC2168 (QTR2013-00339) Acceleration Factor = exp[1.57/8.6x10-5(1/410-1/448)] = 38.5 HMC6XXX (QTR2013-00340) Acceleration Factor = exp[1.57/8.6x10-5(1/406.6-1/422.4)] = 5.4 Equivalent hours = Device hours x Acceleration Factor Equivalent hours = (13,640x14.9)+(24,000x168.2)+(116,480x168.2)+(15,008x168.2)+(77,000x1.2)+(78,000x30.4)+(78,000x43.7) +(4,200x376.4)+(4,800x2612.6)+(4,032x563.6)+(4,032x1232.6)+(4,032x836.9)+(4,032x1232.6)+(80,000x25.5) +(77,000x39.2)+(80,000x43.7)+(81,000x38.5)+(30,324x5.4)+(28,000x5.4) = 7.39x107 hours Since there was no failures and we used a time terminated test, F=0, and R = 2F+2 = 2 QTR: 2013- 00269 Wafer Process: PHEMT-F Rev: 05 The failure rate was calculated using Chi Square Statistic: at 60% and 90% Confidence Level (CL), with 0 units out of spec and a 85°C device case temp; Failure Rate λ60 = [(χ2)60,2]/(2X 7.39x107 )] = 1.8/ 1.48x108 = 1.24x10-8 failures/hour or 12.4 FIT or MTTF = 8.08x107 Hours λ90 = [(χ2)90,2]/(2X 7.39x107 )] = 4.6/ 1.48x108 = 3.12x10-8 failures/hour or 31.2 FIT or MTTF = 3.21x107 Hours