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HMC356LP3 / 356LP3E
v03.0610
AMPLIFIERS - LOW NOISE - SMT
7
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
Typical Applications
Features
The HMC356LP3 / HMC356LP3E is ideal for
basestation receivers:
Noise Figure: ≤1.0 dB
• GSM 450 & GSM 480
Gain: 17 dB
• CDMA 450
Very Stable Gain vs. Supply & Temperature
• Private Land Mobile Radio
Single Supply: +5V @ 104 mA
+38 dBm Output IP3
50 Ohm Matched Output
Functional Diagram
General Description
The HMC356LP3 & HMC356LP3E are high dynamic
range GaAs PHEMT MMIC Low Noise Amplifiers
is ideal for GSM & CDMA cellular basestation and
Mobile Radio front-end receivers operating between
350 and 550 MHz. This LNA has been optimized to
provide 1.0 dB noise figure, 17 dB gain and +38 dBm
output IP3 from a single supply of +5V @ 104 mA.
Input and output return losses are 15 dB typical, with
the LNA requiring only four external components to
optimize the RF input match, RF ground and DC bias.
For applications which require improved noise figure,
please see the HMC616LP3(E).
Electrical Specifi cations, TA = +25° C, Vs = +5V
Parameter
Min.
Frequency Range
Gain
15
Gain Variation Over Temperature
Max.
Units
MHz
17
dB
0.0032
0.010
Noise Figure
1.0
1.4
Input Return Loss
17
dB
Output Return Loss
12
dB
Reverse Isolation
Output Power for 1dB Compression (P1dB)
17
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
(-20 dBm Input Power per tone, 1 MHz tone spacing)
Supply Current (Idd)
7 - 46
Typ.
350 - 550
34
dB / °C
dB
24
dB
21
dBm
22.5
dBm
38
dBm
104
mA
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC356LP3 / 356LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
1.5
20
1.4
15
1.3
10
5
S21
S11
S22
-5
-10
1.1
1
0.9
0.8
0.7
-20
0.6
0.25
0.5
0.75
1
1.25
1.5
FREQUENCY (GHz)
1.75
0.5
0.3
2
1.4
18
1.3
NOISE FIGURE (dB)
1.5
19
17
16
15
+25 C
+85 C
-40 C
13
0.5
0.55
0.6
0.55
0.6
0.55
0.6
1
0.9
0.8
0.7
0.6
10
0.4
0.45
0.5
FREQUENCY (GHz)
0.55
0.5
0.3
0.6
+4.5 V
+5.0 V
+5.5 V
1.1
11
0.35
0.45
1.2
12
0.3
0.4
Noise Figure vs. Vdd
20
14
0.35
FREQUENCY (GHz)
Gain vs. Temperature
GAIN (dB)
1.2
-15
-25
+25 C
+85 C
-40 C
0.35
0.4
0.45
0.5
AMPLIFIERS - LOW NOISE - SMT
25
0
7
Noise Figure vs. Temperature
NOISE FIGURE (dB)
RESPONSE (dB)
Broadband Gain & Return Loss
FREQUENCY (GHz)
Reverse Isolation
Gain vs. Vdd
0
20
19
-5
18
ISOLATION (dB)
GAIN (dB)
17
16
15
14
+5.0 V
+4.5 V
+5.5 V
13
12
+25 C
+85 C
-40 C
-10
-15
-20
-25
11
10
0.3
-30
0.35
0.4
0.45
0.5
FREQUENCY (GHz)
0.55
0.6
0.3
0.35
0.4
0.45
0.5
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
7 - 47
HMC356LP3 / 356LP3E
v03.0610
Output Return Loss vs. Temperature
0
0
-5
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
Input Return Loss vs. Temperature
+25 C
+85 C
-40 C
-10
-15
-20
0.3
0.4
0.45
0.5
FREQUENCY (GHz)
0.55
0.6
0.3
25
40
24
COMPRESSION (dBm)
26
41
39
38
37
36
35
0.4
0.45
0.5
FREQUENCY (GHz)
0.55
20
19
+25 C
+85 C
-40 C
P1dB
0.35
0.4
0.45
0.55
0.6
0.55
0.6
P1dB vs. Vdd
26
25
40
24
39
38
37
36
+4.5 V
+5.0 V
+5.5 V
23
22
21
20
19
18
33
+4.5 V
+5.0 V
+5.5 V
17
32
0.35
0.5
FREQUENCY (GHz)
COMPRESSION (dBm)
OUTPUT IP3 (dBm)
21
41
0.3
PSAT
22
42
34
0.6
23
16
0.3
0.6
Output IP3 vs. Vdd
35
0.55
17
32
0.35
0.4
0.45
0.5
FREQUENCY (GHz)
18
+25 C
+85 C
-40 C
33
0.35
P1dB & Psat vs. Temperature
42
34
7 - 48
-15
-25
0.35
Output IP3 vs. Temperature
0.3
+25 C
+85 C
-40 C
-10
-20
-25
OUTPUT IP3 (dBm)
AMPLIFIERS - LOW NOISE - SMT
7
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
0.4
0.45
0.5
FREQUENCY (GHz)
0.55
0.6
16
0.3
0.35
0.4
0.45
0.5
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC356LP3 / 356LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+8.0 Vdc
Vdd (Vdc)
Idd (mA)
RF Input Power (RFIN)(Vdd = +5.0 Vdc)
+15 dBm
+4.5
103
Channel Temperature
150 °C
+5.0
104
Continuous Pdiss (T = 85 °C)
(derate 14 mW/°C above 85 °C)
0.910 W
+5.5
105
Thermal Resistance
(channel to ground paddle)
71.4 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
7
AMPLIFIERS - LOW NOISE - SMT
Absolute Maximum Ratings
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED
LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC356LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC356LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
356
XXXX
[2]
356
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
7 - 49
HMC356LP3 / 356LP3E
v03.0610
AMPLIFIERS - LOW NOISE - SMT
7
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 5, 8, 9, 10,
12, 13, 14
N/C
No connection necessary.
These pins may be connected to RF/DC ground.
2, 4, 6,16
GND
These pins and package ground paddle
must be connected to RF/DC ground.
3
RFIN
This pin is matched to 50 Ohms with a 51 nH
inductor to ground. See Application Circuit.
7
ACG
AC Ground - An external capacitor of 0.01μF to
ground is required for low frequency bypassing.
See Application Circuit for further details.
11
RFOUT
This pin is AC coupled and matched to 50 Ohms.
15
Vdd
Power supply voltage. Choke inductor and bypass
capacitor are required. See application circuit.
Application & Evaluation PCB Circuit
Note 1: Choose value of capacitor C1 for low frequency
bypassing. A 0.01 μF ±10% capacitor is recommended.
Note 2: L1, L2 and C1 should be located as close to pins as
possible.
7 - 50
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC356LP3 / 356LP3E
v03.0610
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 350 - 550 MHz
7
AMPLIFIERS - LOW NOISE - SMT
Evaluation PCB
List of Materials for Evaluation PCB 107795 [1]
Item
Description
J1 - J2
PCB Mount SMA RF Connector
J3 - J4
DC Pin
C1
10,000 pF Capacitor, 0402 Pkg.
C2
10,000 pF Capacitor, 0603 Pkg.
L1
51 nH Inductor, 0402 Pkg.
L2
36 nH Inductor, 0603 Pkg.
U1
HMC356LP3 / HMC356LP3E Amplifier
PCB [2]
106722 Evaluation PCB
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from
Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
7 - 51