NSS35200CF8T1G D

NSS35200CF8T1G
35 V, 7 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2 PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
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35 VOLTS
7.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 78 mW
COLLECTOR
1, 2, 3, 6, 7, 8
4
BASE
Features
• This is a Pb−Free Device
5
EMITTER
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
−35
Vdc
Collector-Base Voltage
VCBO
−55
Vdc
Emitter-Base Voltage
VEBO
−5.0
Vdc
IC
−2.0
Adc
Collector Current − Peak
ICM
−7.0
A
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
(Note 1)
635
mW
5.1
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
(Note 1)
200
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
(Note 2)
1.35
W
11
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
(Note 2)
90
°C/W
Thermal Resistance, Junction−to−Lead #1
Total Device Dissipation
(Single Pulse < 10 sec)
Junction and Storage
Temperature Range
RqJL
15
°C/W
PDsingle
(Notes 2 & 3)
2.75
W
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm2, 1 oz copper traces.
2. FR−4 @ 500 mm2, 1 oz copper traces.
3. Thermal response.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 5
1
PIN
CONNECTIONS
MARKING
DIAGRAM
C 8
1 C
1
8
C 7
2 C
2
7
C 6
3 C
3
E 5
4 B
4
G4 M
G
Symbol
ChipFET]
CASE 1206A
STYLE 4
6
5
G4 = Specific Device Code
M = Month Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping †
NSS35200CF8T1G
ChipFET
(Pb−Free)
3000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSS35200CF8T1G/D
NSS35200CF8T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
−35
−45
−
−55
−65
−
−5.0
−7.0
−
−
−0.03
−0.1
−
−0.03
−0.1
−
−0.01
−0.1
100
100
100
200
200
200
−
400
−
−
−
−
−
−
−
−0.10
−0.15
−0.30
−
−0.68
−0.85
−
−0.81
−0.875
100
−
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −35 Vdc, IE = 0)
ICBO
Collector−Emitter Cutoff Current
(VCES = −35 Vdc)
ICES
Emitter Cutoff Current
(VEB = −6.0 Vdc)
IEBO
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −1.5 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
hFE
Collector −Emitter Saturation Voltage (Note 4)
(IC = −0.1 A, IB = −0.010 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.02 A)
VCE(sat)
Base −Emitter Saturation Voltage (Note 4)
(IC = −1.0 A, IB = −0.01 A)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 4)
(IC = −2.0 A, VCE = −3.0 V)
VBE(on)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
V
V
V
fT
MHz
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
Cibo
−
600
650
pF
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
Cobo
−
85
100
pF
Turn−on Time (VCC = −10 V, IB1 = −100 mA, IC = −1 A, RL = 3 W)
ton
−
35
−
nS
Turn−off Time (VCC = −10 V, IB1 = IB2 = −100 mA, IC = 1 A, RL = 3 W)
toff
−
225
−
nS
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%
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2
VCE(sat), COLLECTOR EMITTER SATURATION
VOLTAGE (VOLTS)
0.1
IC/IB = 100
50
10
0.01
0.001
0.001
0.01
0.1
0.20
100°C
0.15
25°C
0.10
0.05
0
0.001
0.01
0.1
1.0
Figure 1. Collector Emitter Saturation Voltage
versus Collector Current
Figure 2. Collector Emitter Saturation Voltage
versus Collector Current
1.0
125°C (5 V)
125°C (2 V)
hFE , DC CURRENT GAIN
400
350
25°C (5 V)
300
25°C (2 V)
250
200
−55°C (5 V)
150
−55°C (2 V)
100
50
0.01
0.1
1
−55°C
0.8
25°C
0.6
100°C
0.4
0.2
0
0.001
10
0.001
0.1
0.01
1.0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain versus
Collector Current
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
750
1.0
700
0.9
C ibo , INPUT CAPACITANCE (pF)
1.1
100°C
0.8
25°C
0.7
0.6
−55°C
0.5
0.4
0.3
−55°C
IC, COLLECTOR CURRENT (A)
450
V BE(on) , BASE EMITTER TURN−ON VOLTAGE (VOLTS)
IC/IB = 50
IC, COLLECTOR CURRENT (A)
500
0
0.25
1.0
VBE(sat) , BASE EMITTER SATURATION
VOLTAGE (VOLTS)
VCE(sat), COLLECTOR EMITTER SATURATION
VOLTAGE (VOLTS)
NSS35200CF8T1G
650
600
550
500
450
400
350
0.001
0.01
0.1
300
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IC, COLLECTOR CURRENT (A)
VEB, EMITTER BASE VOLTAGE (V)
Figure 5. Base Emitter Turn−On Voltage
versus Collector Current
Figure 6. Input Capacitance
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3
4.5
5.0
NSS35200CF8T1G
10
200
1 ms
1s
10 ms
175
150
1.00
125
IC, (A)
Cobo, OUTPUT CAPACITANCE (pF)
225
100
100 ms
Thermal Limits
0.10
75
50
25
0
0.01
0
5.0
10
15
20
25
30
35
0.10
1
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
R(t), TRANSIENT THERMAL RESISTANCE
10
VCE, (Vdc)
Figure 8. Safe Operating Area
1000
D = 0.10
D = 0.50
100
D = 0.20
P(pk)
10
D = 0.05
1
D = 0.01
t1
0.1
Single Pulse
t2
Duty Cycle = D = t1/t2
qJC = 174°C/W
0.01
t1, TIME (Sec)
Figure 9. Normalized Thermal Response
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4
100
NSS35200CF8T1G
PACKAGE DIMENSIONS
ChipFET
CASE 1206A−03
ISSUE PRELIMINARY
A
8
7
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED
0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET
IN HORIZONTAL AND VERTICAL SHALL
NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF
MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP
AND BOTTOM LEAD SURFACE.
M
6
K
5
S
5
6
7
8
4
3
2
1
B
1
2
3
L
4
D
DIM
A
B
C
D
G
J
K
L
M
S
J
G
STYLE 4:
PIN 1. COLLECTOR
2. COLLECTOR
3. COLLECTOR
4. BASE
5. EMITTER
6. COLLECTOR
7. COLLECTOR
8. COLLECTOR
C
0.05 (0.002)
MILLIMETERS
MIN
MAX
2.95
3.10
1.55
1.70
1.00
1.10
0.25
0.35
0.65 BSC
0.10
0.20
0.28
0.42
0.55 BSC
5 ° NOM
1.80
2.00
INCHES
MIN
MAX
0.116 0.122
0.061 0.067
0.039 0.043
0.010 0.014
0.025 BSC
0.004 0.008
0.011 0.017
0.022 BSC
5 ° NOM
0.072 0.080
SOLDERING FOOTPRINT*
2.032
0.08
2.032
0.08
0.457
0.018
0.635
0.025
1.727
0.068
0.457
0.018
0.711
0.028
0.66
0.026
SCALE 20:1
0.178
0.007
0.711
0.028
mm Ǔ
ǒinches
0.66
0.026
Basic
SCALE 20:1
Style 4
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
mm Ǔ
ǒinches
NSS35200CF8T1G
ChipFET is a trademark of Vishay Siliconix.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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6
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For additional information, please contact your
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NSS35200CF8T1G/D