NTJD5121N D

NTJD5121N, NVJD5121N
Power MOSFET
60 V, 295 mA, Dual N−Channel with ESD
Protection, SC−88
Features
•
•
•
•
•
•
Low RDS(on)
Low Gate Threshold
Low Input Capacitance
ESD Protected Gate
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
This is a Pb−Free Device
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V(BR)DSS
RDS(on) MAX
ID Max
1.6 W @ 10 V
295 mA
60 V
2.5 W @ 4.5 V
SC−88 (SOT−363)
Applications
• Low Side Load Switch
• DC−DC Converters (Buck and Boost Circuits)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Symbol
Value
Unit
VDSS
60
V
VGS
±20
V
ID
295
mA
Steady
State
TA = 25°C
TA = 85°C
212
t≤5s
TA = 25°C
304
TA = 85°C
219
Steady
State
TA = 25°C
PD
t≤5s
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
Top View
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 G2 S2
mW
250
1
266
IDM
900
mA
TJ, TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
210
mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Gate−Source ESD Rating (HBM)
ESDHBM
2000
V
Gate−Source ESD Rating (MM)
ESDMM
200
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SC−88/SOT−363
CASE 419B
STYLE 26
XX
M
G
6
XX M G
G
1
S1 G1 D2
= Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information ion page 5 of
this data sheet.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Ambient – Steady State
RqJA
467
°C/W
Junction−to−Ambient – t ≤ 5 s
RqJA
412
Junction−to−Lead – Steady State
RqJL
252
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2015
July, 2015 − Rev. 9
1
Publication Order Number:
NTJD5121N/D
NTJD5121N, NVJD5121N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = 250 mA, ref to 25°C
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 60 V
92
mV/°C
TJ = 25°C
1.0
TJ = 125°C
500
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
Gate−to−Source Leakage Current
V
±10
mA
mA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
gFS
Gate Resistance
RG
1.0
1.7
2.5
4.0
V
mV/°C
W
VGS = 10 V, ID = 500 mA
1.0
1.6
VGS = 4.5 V, ID = 200 mA
1.2
2.5
VDS = 5 V, ID = 200 mA
80
S
536
W
26
pF
CHARGES AND CAPACITANCES
CISS
Input Capacitance
VGS = 0 V, f = 1.0 MHz,
VDS = 20 V
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
2.5
Total Gate Charge
QG(TOT)
0.9
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
0.28
td(on)
22
VGS = 4.5 V, VDS = 25 V,
ID = 200 mA
4.4
nC
0.2
0.3
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 4.5 V, VDD = 25 V,
ID = 200 mA, RG = 25 W
tf
ns
34
34
32
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 200 mA
TJ = 25°C
0.8
TJ = 85°C
0.7
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTJD5121N, NVJD5121N
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
1.6
VDS ≥ 10 V
1
4.5 V
1.2
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.2
TJ = 25°C
VGS = 10
5V
4V
4.2 V
3.8 V
2.4 V
3.6 V
0.8
3.4 V
2.2 V
3.2 V
3V
2.8 V
2.6 V
0.4
0
0.4
25°C
0.2
TJ = 125°C
−55°C
1
2
3
4
5
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 85°C
TJ = 25°C
TJ = −55°C
0.8
0.4
0
0
4
Figure 2. Transfer Characteristics
TJ = 125°C
1.2
3
Figure 1. On−Region Characteristics
VGS = 4.5 V
1.6
2
VGS, GATE−TO−SOURCE VOLTAGE (V)
2.4
2
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1
5
2.4
VGS = 10 V
2
TJ = 125°C
1.6
TJ = 85°C
1.2
TJ = 25°C
0.8
TJ = −55°C
0.4
0
0
0.2
0.4
0.6
0.8
1
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current and
Temperature
Figure 4. On−Resistance vs. Drain Current and
Temperature
2.4
1.8
ID = 500 mA
2
1.6
4.5 V
1.2
10 V
ID = 200 mA
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0.6
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0.8
ID = 0.2 A
VGS = 4.5 V and 10 V
1.6
1.4
1.2
1
0.8
0.6
0.8
2
4
6
8
10
−50
−25
0
25
50
75
100
125 150
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance versus
Gate−to−Source Voltage
Figure 6. On−Resistance Variation with
Temperature
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3
NTJD5121N, NVJD5121N
TYPICAL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
VGS, GATE−TO−SOURCE VOLTAGE (V)
40
C, CAPACITANCE (pF)
TJ = 25°C
VGS = 0 V
30
Ciss
20
Coss
10
Crss
0
0
4
8
12
16
5
ID = 0.2 A
TJ = 25°C
VDD = 25 V
4
3
2
1
0
0
20
0.2
DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
0.1
TJ = 85°C
TJ = 25°C
0.01
0.6
0.8
1
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
1.2
VGS, GATE−TO−SOURCE VOLTAGE (V)
IS, SOURCE CURRENT (A)
VGS = 0 V
2.5
2.4 ID = 250 mA
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
−50
−25
0
0.8
1
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Threshold Voltage with Temperature
Figure 9. Diode Forward Voltage vs. Current
r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
0.6
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1
0.4
0.4
Qg, TOTAL GATE CHARGE (nC)
1000
D = 0.5
100
0.2
0.1
0.05
10
0.02
0.01
1
0.000001
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME t,(s)
Figure 11. Thermal Response
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4
1
10
100
1000
NTJD5121N, NVJD5121N
Table 1. ORDERING INFORMATION
Part Number
Marking
(XX)
Package
Shipping†
NTJD5121NT1G
TF
SC−88
(Pb−Free)
3000 / Tape & Reel
NTJD5121NT2G
TF
SC−88
(Pb−Free)
3000 / Tape & Reel
NVJD5121NT1G
VTF
SC−88
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTJD5121N, NVJD5121N
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
2X
aaa H D
D
A
D
6
5
GAGE
PLANE
4
L
L2
E1
E
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
H
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
b
ddd
TOP VIEW
M
A2
C A-B D
DETAIL A
A
6X
ccc C
A1
SIDE VIEW
C
SEATING
PLANE
c
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
6X
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
6X
0.30
0.66
2.50
0.65
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
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PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
Sales Representative
NTJD5121N/D