MBR6045WTG Switch Mode Power Rectifier The Switch Mode power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 May Be Connected for • • • • • Parallel Operation at Full Rating 45 V Blocking Voltage Low Forward Voltage Drop Guard−ring for Stress Protection and High dv/dt Capability (> 10 V/ns) 175°C Operating Junction Temperature These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* SCHOTTKY BARRIER RECTIFIER 60 AMPERES, 45 VOLTS 1 2, 4 3 Mechanical Characteristics • Case: Epoxy, Molded • Weight: 4.3 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 1 260°C Max. for 10 Seconds 2 TO−247 CASE 340AL 3 MAXIMUM RATINGS Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 45 V Average Rectified Forward Current (Rated VR, TC = 125°C) Per Diode Per Device IF(AV) Peak Repetitive Forward Current, (Rated VR, Square Wave, Per Diode 20 kHz, TC = 90°C) IFRM 60 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 500 A Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C TJ(pk) 175 °C Peak Surge Junction Temperature (Forward Current Applied) MARKING DIAGRAM A 30 60 Voltage Rate of Change dv/dt 10,000 V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 10 1 MBR6045WT AYWWG A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping MBR6045WTG TO−247 (Pb−Free) 30 Units/Rail Publication Order Number: MBR6045WT/D MBR6045WTG THERMAL CHARACTERISTICS (Per Diode) Rating Thermal Resistance, Junction−to−Case Symbol Max Unit RqJC 1.0 °C/W ELECTRICAL CHARACTERISTICS (Per Diode) Instantaneous Forward Voltage (Note 2) @ IF = 30 Amps, TC = 25°C @ IF = 30 Amps, TC = 125°C @ IF = 60 Amps, TC = 25°C VF Instantaneous Reverse Current (Note 2) @ Rated DC Voltage, TC = 25°C @ Rated DC Voltage, TC = 100°C IR Volts 0.62 0.55 0.75 mA 1.0 50 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle < 2.0% I R, REVERSE CURRENT (mA) 1000 100 TC = 150°C 10 TC = 100°C 1 0.1 TC = 25°C 0.01 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 i F, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL ELECTRICAL CHARACTERISTICS 100 10 150°C 1 100 Figure 1. Typical Reverse Current 100°C TC = 25°C 200 300 400 500 600 700 vF, INSTANTANEOUS FORWARD VOLTAGE (mV) Figure 2. Typical Forward Voltage http://onsemi.com 2 800 MBR6045WTG PACKAGE DIMENSIONS TO−247 CASE 340AL ISSUE A B A NOTE 4 E SEATING PLANE 0.635 M B A P A E2/2 Q E2 NOTE 4 D S NOTE 3 1 2 4 DIM A A1 b b2 b4 c D E E2 e L L1 P Q S 3 L1 NOTE 5 L 2X b2 c b4 3X e A1 b 0.25 NOTE 7 M B A M NOTE 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTERMOST EXTREME OF THE PLASTIC BODY. 5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1. 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91. 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1. M MILLIMETERS MIN MAX 4.70 5.30 2.20 2.60 1.00 1.40 1.65 2.35 2.60 3.40 0.40 0.80 20.30 21.40 15.50 16.25 4.32 5.49 5.45 BSC 19.80 20.80 3.50 4.50 3.55 3.65 5.40 6.20 6.15 BSC ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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