E07606A1Y

1W High Power Laser Diode
SLD332F
Description
The SLD332F is a 1W high power laser diode designed to have a uniform emission area that is suitable for the
applications for solid-state laser excitation, measurement, printing, etc.
Features
 High-power
Recommended optical power output Po = 1W
 High-optical power density: 1W/100m (Emitting line width)
Package
M-S035
Structure
 AlGaAs quantum well structure laser diode
Operating Lifetime
 MTTF 10,000h (effective value) at Po = 1W, Tc = 25C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license
by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating
the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
-1-
E07606A1Y
SLD332F
Absolute Maximum Ratings
(Tc = 25C)
 Optical power output
Pomax
1.1
W
 Reverse voltage
VR
2
V
 Operating temperature
Tc
–10 to +30
C
 Storage temperature
Tstg
–40 to +85
C
LD
Warranty
Reliability assurance does not apply to this product. Because of the nature of an open heat sink product, the
product shall be handled with special care to avoid any damage by handling and atmosphere including dusts
and hemidity. Quality shall be assured by proper atmosphere maintained by sealed packaging. Laser diodes
naturally has differing lifetimes which follow a Weibull distribution.
-2-
SLD332F
Electrical and Optical Characteristics
(Tc = Case temperature, Tc = 25C)
Item
Symbol
Conditions
Min.
Typ.
Max.
Unit
—
0.4
0.5
A
Threshold current
Ith
Operating current
Iop
Po = 1W
—
1.2
1.5
A
Operating voltage
Vop
Po = 1W
—
1.8
3.0
V
Wavelength
p
Po = 1W
805
—
811
nm
Perpendicular
⊥
Po = 1W
15
24
33
degree
Parallel
//
Po = 1W
4
8
15
degree
X
—
—
100
m
Y
—
—
100
m
Radiation
angle
Position
Positional
accuracy
Angle
Differential efficiency
⊥
Po = 1W
—
—
3
degree
//
Po = 1W
—
—
4
degree
D
Po = 1W
0.65
1.1
—
W/A
-3-
SLD332F
Notes On Handling
Care should be taken for the following points when using this product.
1. This product corresponds to a Class 4 product under IEC60825-1 and JIS standard C6802 “Laser Product
Emission Safety Standards”.
LASER DIODE
LASER DIODE
This product complies with 21
CFR Part 1040.10 and 1040.11
LASER RADIATION
AVOID EYE OR SKIN EXPOSURE TO
DIRECT OR SCATTERED RADIATION
MAXIMUM OUTPUT
WAVELENGTH
Sony Corporation
OVER 1 W
600 - 950 nm
CLASS IV LASER PRODUCT
AVOID EXPOSURE
Laser radiation is
emitted from this
aperture.
1-7-1 Konan,
Minato-ku, Tokyo
108-0075 Japan
2. Eye protection against laser beams
Take care not to allow laser beams to enter your eyes under any circumstances.
For observing laser beams, ALWAYS use safety goggles that block laser beams. Usage of IR scopes,
IR cameras and fluorescent plates is also recommended for monitoring laser beams safely.
3. Gallium Arsenide
This product uses gallium arsenide (GaAs). This is not a problem for normal use, but GaAs vapors may be
potentially hazardous to the human body. Therefore, never crush, heat to the maximum storage
temperature or higher, or place the product in your mouth.
In addition, the following disposal methods are recommended when disposing of this product.
(1) Engaging the services of a contractor certified in the collection, transport and intermediate treatment
of items containing arsenic.
(2) Managing the product through to final disposal as specially managed industrial waste which is
handled separately from general industrial waste and household waste.
4. Prevention of surge current and electrostatic discharge
Laser diodes are most sensitive to electrostatic discharge among semiconductors. When a large current is
passed through the laser diode for even an extremely short time, the strong light emitted from the laser
diode promotes deterioration and then destruction of the laser diode. Therefore, note that surge current
should not flow to the laser diode driving circuit from switches and others. Also, if the laser diode is handled
carelessly, it may be destroyed instantly because electrostatic discharge is easily applied by a human
body. Therefore, be extremely careful about overcurrent and electrostatic discharge.
Also, use the power supply that was designed not to exceed the optical power output specified at the
absolute maximum ratings.
5. Use for special applications
This product is not designed or manufactured for use in equipment used under circumstances where failure
may pose a risk to life and limb, or result in significant material damage, etc.
Consult your Sony sales representative when investigating use for medical, vehicle, nuclear power control
or other special applications.
6. Environment-related Substances to be Controlled
No substances classified at Level 1 (immediate ban) of Sony Technical Standard, SS-00259,
“Management regulations for the Environment-related Substances to be Controlled”. The excerpt from
SS-00259 is introduced on following URL.
http://www.sony.net/SonyInfo/procurementinfo/ss00259/
-4-
SLD332F
Package Outline
(Unit: mm)
M-S035
Cathode
1.8
1.8
1.0
6.35 ± 0.1
0.7
10.0
φ2.3
1.4 ±
3.98 ± 0.1
6.78 ± 0.1
φ4.4 ±
pth
.1 de
2.18 ± 0.1
0.65
0.15
LD Chip
0.1
0
± 0.
1 ho
le
Anode
Lead Strength 0.5kgf
SONY CODE
PACKAGE MASS
M-S035
1g
EIAJ CODE
JEDEC CODE
-5-
Sony Corporation
Similar pages