E11Y28B47

Ultra-High Linearity SPDT Switch
CXM3592AUR
Description
The CXM3592AUR is a high power and ultra-high linearity SPDT switch for wireless communication systems.
The CXM3592AUR can be used for SVLTE and carrier aggregation requiring very high linearity.
This IC has a 1.8 V CMOS compatible decoder.
The Sony GaAs junction gate pHEMT (JPHEMT) MMIC process is used for low insertion loss and ultra-high linearity.
(Application: LTE/CDMA/GSM/UMTS Handsets and mini base-stations)
Features
◆ Insertion loss: 0.22 dB (Typ.) (Cellular Band / GSM Low Band)
0.43 dB (Typ.) (IMT2000 / GSM High Band)
◆ Ultra-high linearity: IMD3 = –104 dBm (Max.), IIP3 = 82 dBm (Min.)
at LTE Band 13, PTx = +23 dBm, PBlocker = +14 dBm
◆ Low voltage operation: VDD = 2.5 V
◆ No DC blocking capacitors required on RF ports
◆ 1 control input
◆ Small package size: UQFN-12 pin (2.0 mm × 2.0 mm)
◆ Lead-Free and RoHS compliant
Structure
GaAs JPHEMT MMIC switch, CMOS decoder
Moisture Sensitivity
Moisture Sensitivity Level for this part is MSL = 2.
Absolute Maximum Ratings
♦ Bias voltage
VDD
♦ Control voltage
Vctl
♦ Maximum input power
4
V
(Ta = 25 ˚C)
(Ta = 25 ˚C)
4
V
36
dBm
♦ Operating temperature
Topr
–35 to +90
˚C
♦ Storage temperature
Tstg
–65 to +150
˚C
(Duty cycle = 12.5 to 50 %, Ta = 25 ˚C)
This IC is ESD sensitive device. Special handling precautions are required.
1
Block Diagram
SPDT Antenna Switch
RF2
RF1
RF3
MMIC Switch
CTL
CMOS Decoder
VDD
MMIC Switch
F1
RF2
RF1
F2
RF3
Truth Table
CTL
Active path
F1
F2
L
RF1-RF2
ON
OFF
H
RF1-RF3
OFF
ON
2
Pin Configuration
GND
RF1
GND
(Top View)
6
5
4
GND 7
3 GND
UQFN-12P PKG
RF2 8
2 RF3
2.0 mm × 2.0 mm
VDD
10
11
12
CTL
1 GND
GND
GND 9
DC Bias Condition
Parameter
Min.
Typ.
Max.
VDD
2.5
2.7
3.3
Vctl (H)
1.35
1.8
3.3
Vctl (L)
0
—
0.45
Unit
V
3
Electrical Characteristics
(Ta = 25 °C, VDD = 2.5 V, Vctl = 0/1.8 V)
Item
Symbol
Path
RF1-RF2
Insertion loss
IL
RF1-RF3
RF1-RF2
Isolation
ISO.
RF1-RF3
VSWR
VSWR
All ports in
active paths
2fo
Condition
Min.
Typ.
Max.
*1, *2, *6, *8
―
0.22
0.37
*3, *4, *7, *9
―
0.43
0.58
*5
―
0.57
0.77
*1, *2, *6, *8
―
0.22
0.37
*3, *4, *7, *9
―
0.43
0.58
*5
―
0.57
0.77
*1, *2, *6, *8
18
21
―
*3, *4, *7, *9
11
14
―
*5
9
12
―
*1, *2, *6, *8
18
21
―
*3, *4, *7, *9
11
14
―
*5
9
12
―
700 to 2700 MHz
―
―
1.5
―
–60
–41
―
–68
–41
―
–66
–45
―
–72
–45
―
–80
–50
―
–90
–50
*6
3fo
2fo
Harmonics
3fo
RF1-RF2, RF3
*7
2fo
*2, *3, *5
3fo
Inter modulation
distortion in Rx
Band
Unit
dB
dB
―
dBm
2fo
*1
―
–82
–78
IMD2
*10, *11, *12, *15, *16, *19, *20, *23, *24
―
―
–110
*10, *13, *14, *17, *18, *21, *22, *25, *26
―
―
–110
*10, *27
―
―
–104
dBm
*10, *28
―
―
–110
dBm
IMD3
RF1-RF2, RF3
dBm
Switching speed
Ts
50 % Ctl to 90 % RF
―
9
13
µs
Wakeup time
Twu
VDD = 2.5 V to 90 % RF, Pin = 0 dBm
―
9
20
µs
Control current
Ictl
Vctl = 1.8 V
―
1
5
µA
Supply current
Idd
VDD = 2.7 V
―
0.14
0.35
mA
Electrical characteristics are measured with all RF ports terminated in 50 Ω.
*1
*2
*3
*4
*5
*6
*7
*8
*9
*10
Pin = 25 dBm, 704 to 787 MHz
(Band 13, Band 17)
Pin = 26 dBm, 824 to 960 MHz
(Band 5, Band 8)
Pin = 26 dBm, 1710 to 1990 MHz (Band 1 Tx, Band 2 Tx, Band 3 Tx, Band 4 Tx)
Pin = 10 dBm, 2110 to 2170 MHz (Band 1 Rx, Band 4 Rx)
Pin = 26 dBm, 2500 to 2690 MHz (Band 7)
Pin = 35 dBm, 824 to 915 MHz
(GSM850/900 Tx)
Pin = 32 dBm, 1710 to 1910 MHz (GSM1800/1900 Tx)
Pin = 10 dBm, 869 to 960 MHz
(GSM850/900 Rx)
Pin = 10 dBm, 1805 to 1990 MHz (GSM1800/1900 Rx)
Measured with the recommended circuit.
4
IMD Condition (1)
Band
Band 1
Band 2
Band 5
Band 7
fRx on RF
[MHz]
2140
1960
880
2655
fTx
+20 dBm on RF
[MHz]
fBlocker
–15 dBm on RF1
[MHz]
1950
1880
835
2535
IMD condition
IMD2 (fRx – fTx)
190
*11
IMD2 (fRx + fTx)
4090
*12
IMD3 (2fTx – fRx)
1760
*13
IMD3 (2fTx + fRx)
6040
*14
IMD2 (fRx – fTx)
80
*15
IMD2 (fRx + fTx)
3840
*16
IMD3 (2fTx – fRx)
1800
*17
IMD3 (2fTx + fRx)
5720
*18
IMD2 (fRx – fTx)
45
*19
IMD2 (fRx + fTx)
1715
*20
IMD3 (2fTx – fRx)
790
*21
IMD3 (2fTx + fRx)
2550
*22
IMD2 (fRx – fTx)
120
*23
IMD2 (fRx + fTx)
5190
*24
IMD3 (2fTx – fRx)
2415
*25
IMD3 (2fTx + fRx)
7725
*26
IMD Condition (2)
Band
fRx on RF
[MHz]
fTx
PTx = +23 dBm
on RF
[MHz]
Band 13
747
786
IMD3 (2fTx – fRx)
825
*27
BC0
872
782
IMD3 (fTx + fRx)/2
827
*28
fBlocker
PBlocker = +14 dBm on RF1
[MHz]
5
IMD condition
Triple Beat Ratio
(VDD = 2.5 V, Ta = 25 °C)
Condition
Item
Triple
beat
ratio
Symbol
TBR
Path
RF1 - RF2,
RF3
Input
power
at RF
[dBm]
Tx1 at
RF*
[MHz]
Tx2 at
RF*
[MHz]
Jammer
at RF1
–30 dBm
[MHz]
Triple beat
product
at RF*
[MHz]
21.5
835.5
836.5
881.5
21.5
1880
1881
13.5
1732
1733
Min.
Typ.
Max.
881.5 ± 1
88
―
―
1960
1960 ± 1
88
―
―
2132
2132 ± 1
88
―
―
Unit
dBc
* Electrical characteristics are measured with all RF ports terminated in 50 Ω.
Measured with the recommended circuit.
IIP2
(VDD = 2.5 V, Ta = 25 °C)
Condition
Item
Input
IP2
Symbol
IIP2
Path
RF1 - RF2,
RF3
Tx at RF*
24 dBm [MHz]
Jammer at
RF1 –20 dBm
[MHz]
IM2 product at
RF* [MHz]
Min.
Typ.
Max.
836.61
1718.61
881.61
113.5
―
―
836.61
45
881.61
95.5
―
―
1885
3850
1965
95.5
―
―
1885
80
1965
95.5
―
―
1732.5
3865
2132.5
95.5
―
―
1732.5
400
2132.5
95.5
―
―
* Electrical characteristics are measured with all RF ports terminated in 50 Ω.
Measured with the recommended circuit.
6
Unit
dBm
Recommended Circuit
RF1
C1
L1
6
RF2
5
4
7
3
8
2
9
1
10
11
12
C2
VDD
CTL
∗1 No DC blocking capacitors are required on all RF ports. (Except sourcing DC bias)
∗2 The DC levels of all RF ports are GND.
∗3 L1 (27 nH) and C1 (12 pF) are recommended on RF1 port for ESD protection.
∗4 C2 (100 pF) is recommended on VDD pin for Decoupling Capacitor.
7
RF3
Recommended Land Pattern
8
Package Outline
Product Code : 875340755
(Unit: mm)
9
Package Outline
Product Code : 875342695
(Unit: mm)
10
Marking
Product Code : 875340755
11
Marking
Product Code : 875342695
12
Tape and Reel Size
CXM3592AUR-T9
Product Code:875340755
13
Tape and Reel Size
CXM3592AUR-T9
Product Code:875342695
14
Note
Sony reserves the right to change products and specifications without prior notice.
This information does not convey any license by any implication or otherwise under any patents or other right.
Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume
responsibility for any problems arising out of the use of these circuits.
15
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