NTMFS4C35N D

NTMFS4C35N
Power MOSFET
30 V, 80 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
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V(BR)DSS
RDS(ON) MAX
3.2 mW @ 10 V
30 V
• CPU Power Delivery
• DC−DC Converters
ID MAX
80 A
4.0 mW @ 4.5 V
D (5−8)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
VDSS
VGS
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Value
30
±20
22.5
Unit
V
V
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
Power Dissipation
RqJA (Note 1)
TA = 25°C
PD
2.59
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
36
A
Power Dissipation
RqJA ≤ 10 s (Note 1)
TA = 25°C
Continuous Drain
Current RqJA
(Note 2)
ID
TA = 80°C
TA = 25°C
A
S (1,2,3)
16.8
TA = 80°C
Steady
State
PD
ID
TA = 80°C
6.65
12.4
A
9.3
0.78
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
80
A
Power Dissipation
RqJC (Note 1)
TC = 25°C
PD
33
W
TA = 25°C, tp = 10 ms
IDM
180
A
IDmax
TJ,
TSTG
80
−55 to
+150
A
°C
IS
dV/dt
EAS
30
7.0
115
A
V/ns
mJ
TL
260
°C
TC =80°C
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 48 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
60
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 29 A, EAS = 42 mJ.
© Semiconductor Components Industries, LLC, 2014
February, 2014 − Rev. 1
D
1
PD
TA = 25°C
MARKING
DIAGRAM
W
TA = 25°C
Current Limited by Package
Operating Junction and Storage
Temperature
N−CHANNEL MOSFET
27
Power Dissipation
RqJA (Note 2)
Pulsed Drain
Current
G (4)
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
A
Y
W
ZZ
S
S
S
G
D
4C35N
AYWZZ
D
D
= Assembly Location
= Year
= Work Week
= Lot Traceabililty
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4C35NT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4C35NT3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMFS4C35N/D
NTMFS4C35N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
3.8
Junction−to−Ambient – Steady State (Note 4)
RqJA
48.3
Junction−to−Ambient – Steady State (Note 5)
RqJA
159.3
Junction−to−Ambient – (t ≤ 10 s) (Note 4)
RqJA
18.8
Unit
°C/W
4. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
5. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
(transient)
V(BR)DSSt
VGS = 0 V, ID(aval) = 13.2 A,
Tcase = 25°C, ttransient = 100 ns
34
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
V
12
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.3
5.0
mV/°C
VGS = 10 V
ID = 30 A
2.56
3.2
VGS = 4.5 V
ID = 30 A
3.4
4.0
mW
Forward Transconductance
gFS
VDS = 1.5 V, ID = 15 A
50
S
Gate Resistance
RG
TA = 25°C
1.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
2300
VGS = 0 V, f = 1 MHz, VDS = 15 V
1097
pF
46
Capacitance Ratio
CRSS/CISS
Total Gate Charge
QG(TOT)
15
Threshold Gate Charge
QG(TH)
3.3
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
5.5
Gate Plateau Voltage
VGP
3.1
V
32.5
nC
Total Gate Charge
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 30 A
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
0.02
6.5
nC
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
12.6
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
33
21.4
6.7
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTMFS4C35N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 7)
td(ON)
Turn−On Delay Time
Rise Time
8.7
tr
Turn−Off Delay Time
td(OFF)
Fall Time
26
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
ns
28
tf
4.4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
VGS = 0 V,
IS = 10 A
TJ = 25°C
0.8
TJ = 125°C
0.62
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
1.1
V
41
21
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
ns
20
QRR
30
nC
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
3.8 V − 10 V
VGS = 3.6 V
ID, DRAIN CURRENT (A)
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
3.4 V
3.2 V
TJ = 25°C
3.0 V
2.8 V
2.6 V
2.4 V
0
0.5
1.0
1.5
2.0
2.5
3.0
TJ = 125°C
TJ = 25°C
1.0
1.5
2.0
TJ = −55°C
2.5
3.0
3.5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
5.5
TJ = 25°C
ID = 30 A
5.0
4.5
4.0
3.5
3.0
2.5
3
VDS = 3 V
VGS, GATE−TO−SOURCE VOLTAGE (V)
6.0
2.0
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. VGS
4.0
4.0
3.8
TJ = 25°C
3.6
VGS = 4.5 V
3.4
3.2
3.0
2.8
VGS = 10 V
2.6
2.4
2.2
2.0
10
20
30
40
50
60
70
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
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3
NTMFS4C35N
TYPICAL CHARACTERISTICS
100,000
VGS = 0 V
VGS = 10 V
ID = 30 A
1.5
IDSS, LEAKAGE (nA)
1.3
1.2
1.0
0.9
0.8
0.7
0.6
−50
−25
0
25
50
75
100
125
C, CAPACITANCE (pF)
5
10
15
20
25
30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
Ciss
2000
Coss
1600
TJ = 25°C
VGS = 0 V
1200
800
400
Crss
5
10
15
20
25
30
10
QT
8
6
4
Qgs
TJ = 25°C
VGS = 10 V
VDD = 15 V
ID = 30 A
Qgd
2
0
0
4
8
12
16
20
28
24
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
32
20
VDD = 15 V
ID = 15 A
VGS = 10 V
18
IS, SOURCE CURRENT (A)
t, TIME (ns)
100
TJ, JUNCTION TEMPERATURE (°C)
2400
td(off)
tf
100
tr
td(on)
10
1
TJ = 85°C
10
150
2800
0
TJ = 125°C
1000
1.1
0
TJ = 150°C
10,000
1.4
VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.7
1.6
1
10
14
12
10
8
TJ = 125°C
TJ = 25°C
6
4
2
0
100
VGS = 0 V
16
0.4
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTMFS4C35N
ID, DRAIN CURRENT (A)
1000
Single Pulse Response
0 V < VGS < 10 V
100 TA = 25°C
10 ms
100 ms
10
1 ms
10 ms
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.01
0.01
0.1
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
TYPICAL CHARACTERISTICS
100
45
40
ID = 29 A
35
30
25
20
15
10
5
0
25
50
75
100
125
150
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Stating Junction Temperature
140
100
ID, DRAIN CURRENT (A)
120
GFS (S)
100
80
60
VDS = 1.5 V
40
10
20
0
0
25
50
75
100
125
1
150
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
ID (A)
PULSE WIDTH (sec)
Figure 13. GFS vs. ID
Figure 14. Avalanche Characteristics
1.E−03
100
50% Duty Cycle
R(t) (°C/W)
10
1
0.1
0.01
20%
10%
5%
2%
1%
Single Pulse
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 15. Thermal Response
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5
1
10
100
1000
NTMFS4C35N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE H
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
2X
0.20 C
4X
E1
2
3
q
E
2
1
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
0.10 C
SIDE VIEW
8X
DETAIL A
b
0.10
C A B
0.05
c
1
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.70
4.90
5.10
3.80
4.00
4.20
6.15 BSC
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
SOLDERING FOOTPRINT*
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
3X
4X
1.270
0.750
4X
1.000
e/2
L
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
0.965
4
1.330
K
2X
0.905
2X
PIN 5
(EXPOSED PAD)
G
0.495
E2
L1
4.530
3.200
M
0.475
2X
D2
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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NTMFS4C35N/D