HMC478SC70 Data Sheet PDF

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HMC478SC70 / 478SC70E
v02.0814
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Amplifiers - Driver & Gain Block - SMT
8
Typical Applications
Features
The HMC478SC70(E) is an ideal for:
P1dB Output Power: +17 dBm
• Cellular / PCS / 3G
Gain: 23 dB
• WiBro / WiMAX / 4G
Output IP3: +31 dBm
• Fixed Wireless & WLAN
Cascadable 50 Ohm I/Os
• CATV, Cable Modem & DBS
Single Supply: +5V to +8V
• Microwave Radio & Test Equipment
Industry Standard SC70 Package
Functional Diagram
General Description
The HMC478SC70(E) is a SiGe Heterojunction
Bipolar Transistor (HBT) Gain Block MMIC SMT
amplifier covering DC to 4 GHz. This industry
standard SC70 packaged amplifier can be used as
a cascadable 50 Ohm RF/IF gain stage as well as
a LO or PA driver with up to +17 dBm output power.
The HMC478SC70(E) offers 23 dB of gain with a
+31 dBm output IP3 at 850 MHz while requiring only
62 mA from a single positive supply. The Darlington
topology results in reduced sensitivity to normal
process variations and excellent gain stability over
temperature while requiring a minimal number of
external bias components.
Electrical Specifications, Vs= 5V, Rbias= 18 Ohm, TA = +25° C
Parameter
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
Gain
Gain Variation Over Temperature
Typ.
20
16
13
11
24
20
17
15
Max.
Units
dB
dB
dB
dB
DC - 4 GHz
0.015
Input Return Loss
DC - 3.0 GHz
3.0 - 4.0 GHz
15
17
dB
dB
Output Return Loss
DC - 3.0 GHz
3.0 - 4.0 GHz
15
13
dB
dB
Reverse Isolation
DC - 4 GHz
0.02
dB/ °C
20
dB
16
15
12
dBm
dBm
dBm
Output Power for 1 dB Compression (P1dB)
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
Output Third Order Intercept (IP3)
(Pout= 0 dBm per tone, 1 MHz spacing)
0.5 - 2.0 GHz
2.0 - 3.0 GHz
3.0 - 4.0 GHz
31
28
25
dBm
dBm
dBm
Noise Figure
DC - 3.0 GHz
3.0 - 4.0 GHz
2.5
2.8
dB
dB
Supply Current (Icq)
8-1
Min.
13
11
9
62
82
For price, delivery and to place orders: Analog Devices, Inc., 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
mA
HMC478SC70 / 478SC70E
v02.0814
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Gain vs. Temperature
30
20
25
10
20
S21
S11
S22
0
15
-10
10
-20
5
-30
+25C
+85C
-40C
0
0
1
2
3
4
5
6
7
8
0
1
FREQUENCY (GHz)
3
4
5
Output Return Loss vs. Temperature
0
0
-5
-5
S21
S11
S22
-10
RETURN LOSS (dB)
RETURN LOSS (dB)
2
FREQUENCY (GHz)
Input Return Loss vs. Temperature
-15
-20
-25
+25C
+85C
-40C
-10
-15
-20
-25
-30
-30
0
1
2
3
4
5
0
1
FREQUENCY (GHz)
2
3
4
5
4
5
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
10
0
-5
8
NOISE FIGURE (dB)
REVERSE ISOLATION (dB)
8
Amplifiers - Driver & Gain Block - SMT
30
GAIN (dB)
RESPONSE (dB)
Broadband Gain & Return Loss
+25C
+85C
-40C
-10
-15
-20
+25C
+85C
-40C
6
4
2
-25
0
-30
0
1
2
3
FREQUENCY (GHz)
4
5
0
1
2
3
FREQUENCY (GHz)
For price, delivery and to place orders: Analog Devices, Inc., 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
8-2
HMC478SC70 / 478SC70E
v02.0814
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
24
20
20
16
16
Psat (dBm)
P1dB (dBm)
Psat vs. Temperature
24
12
+25C
+85C
-40C
8
12
+25C
+85C
-40C
8
4
4
0
0
0
1
2
3
4
5
0
1
FREQUENCY (GHz)
Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
30
25
+25C
+85C
-40C
15
10
0
1
2
3
4
5
Gain, Power & Output IP3 vs. Supply
Voltage for Rs = 18 Ohms @ 850 MHz
35
20
2
FREQUENCY (GHz)
Output IP3 vs. Temperature
IP3 (dBm)
Amplifiers - Driver & Gain Block - SMT
8
P1dB vs. Temperature
3
4
5
34
32
30
28
26
24
22
20
18
16
14
12
10
8
4.75
Gain
P1dB
Psat
IP3
5
Vs (Vdc)
FREQUENCY (GHz)
Icc vs. Vcc Over Temperature for
Fixed Vs= 5V, Rbias= 18 Ohms
80
75
+85C
Icc (mA)
70
65
+25C
60
55
-40C
50
45
40
3.60
3.70
3.80
3.90
4.00
4.10
4.20
Vcc (V)
8-3
For price, delivery and to place orders: Analog Devices, Inc., 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
5.25
HMC478SC70 / 478SC70E
v02.0814
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Collector Bias Voltage (Vcc)
+6 Vdc
Collector Bias Current (Icc)
100 mA
RF Input Power (RFIN)(Vcc = +2.4 Vdc)
+5 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 9 mW/°C above 85 °C)
0.583 W
Thermal Resistance
(junction to lead)
111.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD MATERIAL: COPPER ALLOY
3. LEAD PLATING: Sn/Pb
4. DIMENSIONS ARE IN INCHES [MILLIMETERS].
8
Amplifiers - Driver & Gain Block - SMT
Absolute Maximum Ratings
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC478SC70
Low Stress Injection Molded Plastic
Sn/Pb
MSL1
[1]
HMC478SC70E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
Package Marking
478E
478E
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
For price, delivery and to place orders: Analog Devices, Inc., 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
8-4
HMC478SC70 / 478SC70E
v02.0814
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Amplifiers - Driver & Gain Block - SMT
8
Pin Descriptions
Pin Number
Function
Description
Interface Schematic
1, 2, 4, 5
GND
These pins must be connected to RF/DC ground.
3
RFIN
This pin is DC coupled.
An off chip DC blocking capacitor is required.
6
RFOUT
RF output and DC Bias (Vcc) for the output stage.
Application Circuit
Recommended Bias Resistor Values
for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc
Supply Voltage (Vs)
5V
6V
8V
Rbias Value
18 Ω
35 Ω
67 Ω
Rbias Power Rating
1/8 W
1/4 W
1/2 W
Note:
1. External blocking capacitors are required on
RFIN and RFOUT.
2.Rbias provides DC bias stability over temperature.
Recommended Component Values for Key Application Frequencies
Component
8-5
Frequency (MHz)
50
900
1900
2200
2400
3500
L1
270 nH
56 nH
18 nH
18 nH
15 nH
8.2 nH
C1, C2
0.01 µF
100 pF
100 pF
100 pF
100 pF
100 pF
For price, delivery and to place orders: Analog Devices, Inc., 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC478SC70 / 478SC70E
v02.0814
SiGe HBT GAIN BLOCK
MMIC AMPLIFIER, DC - 4 GHz
Evaluation PCB
Item
Description
J1 - J2
PCB Mount SMA Connector
J3 - J4
DC Pin
C1 - C3
100 pF Capacitor, 0402 Pkg.
C4
1000 pF Capacitor, 0603 Pkg.
C5
2.2 µF Capacitor, Tantalum
R1
18 Ohm Resistor, 1210 Pkg.
L1
18 nH Inductor, 0603 Pkg.
U1
HMC478SC70(E)
PCB [2]
117360 Evaluation PCB
[1]
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads should be connected directly to the ground
plane similar to that shown. A sufficient number
of via holes should be used to connect the top
and bottom ground planes. The evaluation board
should be mounted to an appropriate heat sink. The
evaluation circuit board shown is available from
Hittite upon request.
Amplifiers - Driver & Gain Block - SMT
List of Materials for Evaluation PCB 118039
8
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
For price, delivery and to place orders: Analog Devices, Inc., 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 • Fax: 978-250-3373 • Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
8-6