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HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Amplifiers - Linear & Power - Chip
3
Typical Applications
Features
The HMC949 is ideal for:
Saturated Output Power: +35.5 dBm @ 26% PAE
• Point-to-Point Radios
High Output IP3: +42 dBm
• Point-to-Multi-Point Radios
High Gain: 31 dB
• VSAT & SATCOM
DC Supply: +7V @ 1200 mA
• Military & Space
No External Matching Required
Die Size: 2.71 x 1.73 x 0.1 mm
Functional Diagram
General Description
The HMC949 is a 4 stage GaAs pHEMT MMIC 2
Watt Power Amplifier with an integrated temperature
compensated on-chip power detector which operates
between 12 and 16 GHz. The HMC949 provides
31 dB of gain, +35.5 dBm of saturated output power,
and 26% PAE from a +7V supply. The HMC949
exhibits excellent linearity and is optimized for high
capacity digital microwave radio. It is also ideal for
13.75 to 14.5 GHz Ku Band VSAT transmitters as well
as SATCOM applications. All data is taken with the
chip in a 50 Ohm test fixture connected via (2) 0.025
mm (1 mil) diameter wire bonds of 0.31 mm (12 mil)
length.
Electrical Specifications
TA = +25° C, Vdd = Vdd1 = Vdd2 = Vdd3 = Vdd4 = Vdd5 = +7V, Idd = 1200mA [1]
Parameter
Min.
Frequency Range
Gain
28
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept
Typ.
12 - 16
(IP3)[2]
Total Supply Current (Idd)
32.5
Max.
Units
GHz
31
dB
0.05
dB/ °C
10
dB
17
dB
34.5
dBm
35.5
dBm
42
dBm
1200
mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 1200mA typical.
[2] Measurement taken at +7V @ 1200mA, Pout / Tone = +22 dBm
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Broadband Gain &
Return Loss vs. Frequency
Gain vs. Temperature
40
38
34
0
30
26
-10
+25C
+85C
-55C
22
-30
18
10
11
12
13
14
15
FREQUENCY (GHz)
16
17
18
11
12
13
Input Return Loss vs. Temperature
15
16
17
Output Return Loss vs. Temperature
0
0
+25C
+85C
-55C
-5
RETURN LOSS (dB)
+25C
+85C
-55C
-4
-8
-12
-16
-10
-15
-20
-25
-30
-20
11
12
13
14
15
16
11
17
12
13
P1dB vs. Temperature
15
16
17
P1dB vs. Supply Voltage
38
36
36
34
34
P1dB (dBm)
38
32
+25C
+85C
-55C
30
14
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB (dBm)
14
FREQUENCY (GHz)
Amplifiers - Linear & Power - Chip
S21
S11
S22
10
-20
RETURN LOSS (dB)
3
20
GAIN (dB)
RESPONSE (dB)
30
32
30
28
5V
6V
7V
28
26
26
12
13
14
FREQUENCY (GHz)
15
16
12
13
14
15
16
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3-2
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Psat vs. Supply Voltage
38
36
36
Psat(dBm)
38
34
+25C
+85C
-55C
32
30
32
5V
6V
7V
28
12
13
14
15
16
12
13
FREQUENCY (GHz)
15
16
15
16
Psat vs. Supply Current (Idd)
38
38
36
36
34
34
Psat (dBm)
P1dB (dBm)
14
FREQUENCY (GHz)
P1dB vs. Supply Current (Idd)
32
30
28
32
800 mA
900 mA
1000 mA
1100 mA
1200 mA
30
800 mA
900 mA
1000 mA
1100 mA
1200 mA
28
26
26
12
13
14
15
16
12
13
FREQUENCY (GHz)
Output IP3 vs.
Supply Current, Pout/Tone = +22 dBm
48
46
46
44
44
42
42
IP3 (dBm)
48
40
38
40
38
36
+25C
+85C
-55C
34
14
FREQUENCY (GHz)
Output IP3 vs.
Temperature, Pout/Tone = +22 dBm
36
800 mA
900 mA
1000 mA
1100 mA
1200 mA
34
32
32
30
30
12
13
14
FREQUENCY (GHz)
3-3
34
30
28
IP3 (dBm)
Amplifiers - Linear & Power - Chip
3
Psat(dBm)
Psat vs. Temperature
15
16
12
13
14
15
16
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Output IM3 @ Vdd = +5V
48
80
46
70
44
IM3 (dBc)
IP3 (dBm)
3
60
42
40
38
36
5V
6V
7V
34
50
40
30
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
20
10
32
30
0
12
13
14
15
16
10
12
14
16
FREQUENCY (GHz)
80
70
70
60
60
50
50
40
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
20
22
24
26
28
24
26
28
40
30
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
20
10
10
0
0
10
12
14
16
18
20
22
24
26
28
10
12
14
Pout/TONE (dBm)
16
18
20
22
Pout/TONE (dBm)
Power Compression @ 14 GHz
Detector Voltage Over Temperature
10
40
35
12.5GHz +25C
12.5GHz +85C
12.5GHz -55C
15.5GHz +25C
15.5GHz +85C
15.5GHz -55C
30
Vref-Vdet (V)
Pout (dBm), GAIN (dB), PAE (%)
20
Output IM3 @ Vdd = +7V
80
IM3 (dBc)
IM3 (dBc)
Output IM3 @ Vdd = +6V
30
18
Pout/TONE (dBm)
25
20
Pout
Gain
PAE
15
Amplifiers - Linear & Power - Chip
Output IP3 vs.
Supply Voltage, Pout/Tone = +22 dBm
1
0.1
10
5
0
-10
0.01
-8
-6
-4
-2
0
2
4
INPUT POWER (dBm)
6
8
10
-5
3
11
19
27
35
OUTPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3-4
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Gain & Power vs.
Supply Current @ 14 GHz
Reverse isolation vs. Temperature
40
-10
+25C
+85C
-55C
ISOLATION (dB)
-20
-30
-40
-50
-60
-70
35
30
Gain
P1dB
Psat
25
20
15
-80
11
12
13
14
15
16
800
17
900
1000
Gain & Power vs.
Supply Voltage @ 14 GHz
1100
1200
Idd (mA)
FREQUENCY (GHz)
Power Dissipation
50
10
9
45
POWER DISSIPATION (W)
Gain (dB), P1dB (dBm), Psat (dBm)
Amplifiers - Linear & Power - Chip
3
Gain (dB), P1dB (dBm), Psat (dBm)
0
Gain
P1dB
Psat
40
35
30
25
8
7
6
5
Max Pdis @ 85C
12 GHz
13 GHz
14 GHz
15 GHz
16 GHz
4
3
2
1
20
5
5.5
6
6.5
7
0
-10
-8
-6
Vdd (V)
-4
-2
0
2
4
6
8
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+8V
RF Input Power (RFIN)
Channel Temperature
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+24 dBm
+5.0
1200
150 °C
+6.0
1200
+7.0
1200
Continuous Pdiss (T= 85 °C)
(derate 133 mW/°C above 85 °C)
8.6 W
Thermal Resistance
(channel to die bottom)
7.5 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 1200 mA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
3-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Outline Drawing
Die Packaging Information
[1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM]
2. DIE THICKNESS IS .004”
3. TYPICAL BOND PAD IS .004” SQUARE
4. BACKSIDE METALLIZATION: GOLD
5. BOND PAD METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND.
7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
8. Overall die size ± .002
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Amplifiers - Linear & Power - Chip
3
Pad Descriptions
Pad Number
Function
Description
1
RFIN
This pad is DC coupled and matched to 50 Ohms
over the operating frequency range.
2-5
Vdd1, Vdd2,
Vdd3, Vdd4
9 - 10
Vdd4, Vdd5
6
RFOUT
Interface Schematic
Drain bias voltage for the amplifier. External bypass
capacitors of 100 pF are required for each pad, followed by
common 0.1 µF capacitors.
This pad is DC coupled
and matched to 50 Ohms.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3-6
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Pad Descriptions (continued)
Amplifiers - Linear & Power - Chip
3
3-7
Pad Number
Function
Description
7
Vdet
DC voltage representing RF output power rectified by diode
which is biased through an external resistor.
8
Vref
DC voltage of diode biased through external resistor, used
for temperature compensation of Vdet.
11 - 14
Vgg1
Gate control for amplifier. External bypass capacitors
of 100 pF and 0.1 µF are required. These pads are
connected on chip
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Assembly Diagram
Amplifiers - Linear & Power - Chip
3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3-8
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
Amplifiers - Linear & Power - Chip
3
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be located as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against > ± 250V
ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
3-9
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC949
v02.0211
GaAs pHEMT MMIC 2 WATT POWER AMPLIFIER
WITH POWER DETECTOR, 12 - 16 GHz
Notes:
Amplifiers - Linear & Power - Chip
3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3 - 10