TE Analog Devices Welcomes Hittite Microwave Corporation O B SO LE NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com TE O B SO LE THIS PAGE INTENTIONALLY LEFT BLANK HMC718LP4 / 718LP4E v01.1008 Typical Applications Features The HMC718LP4(E) is ideal for: Noise Figure: 0.9 dB • Cellular/3G and LTE/WiMAX/4G Gain: 32 dB • BTS & Infrastructure Output IP3: +40 dBm • Repeaters and Femtocells Single Supply: +3V to +5V • Access Points 50 Ohm Matched Input/Output TE • Test Equipment 24 Lead 4x4 mm SMT Package: 16 mm2 Functional Diagram General Description LE The HMC718LP4(E) is a GaAs PHEMT MMIC Low Noise Amplifier that is ideal for Cellular/3G and LTE/WiMAX/4G basestation front-end receivers operating between 600 and 1400 MHz. The amplifier has been optimized to provide 0.9 dB noise figure, 32 dB gain and +40 dBm output IP3 from a single supply of +5V. Input and output return losses are excellent and the LNA requires minimal external matching and bias decoupling components. The HMC718LP4(E) shares the same package and pinout with the HMC719LP3(E) 1.3 - 2.9 GHz LNA. The HMC718LP4(E) can be biased with +3V to +5V and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the LNA for each application. B SO Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz O Electrical Specifications, TA = +25°C, Rbias = 3.92k Ohms* Parameter Vdd = +3V Min. Frequency Range Gain Typ. Max. Min. 0.6 - 1.0 26 Typ. Vdd = +5V Max. Min. 1.0 - 1.4 30.5 25 Typ. Max. Min. 0.6 - 1.0 27.5 27 32 25 Typ. Max. Units 1.0 - 1.4 GHz 29 dB dB/ °C Gain Variation Over Temperature 0.01 0.01 0.01 0.01 Noise Figure 0.95 0.75 0.95 0.8 dB Input Return Loss 15 20 15.5 23 dB Output Return Loss 13 10 15.5 13 dB 21.5 dBm 23.3 dBm Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) 13 15.5 13 19 Output Third Order Intercept (IP3) 35 Supply Current (Idd) 187 15.7 19 19 187 19 23.5 34.5 200 21.5 40.5 200 254 40 281 254 dBm 281 mA * Rbias resistor sets current, see application circuit herein 7-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz Broadband Gain & Return Loss [1] [2] 7 Gain vs. Temperature [1] S21 30 GAIN (dB) 0 25 -20 S22 0.4 S11 0.6 0.8 1 1.2 1.4 FREQUENCY (GHz) 1.6 Gain vs. Temperature [2] +25C +85C -40C 0.7 0.9 1.1 FREQUENCY (GHz) 1.3 1.5 O +25C +85C -40C 0.7 0.9 1.1 FREQUENCY (GHz) 1.3 1.5 Reverse Isolation vs. Temperature [1] 0 -10 +25C +85C -40C ISOLATION (dB) -5 -30 -50 0.5 0 RETURN LOSS (dB) 1.3 -20 -40 1.5 Output Return Loss vs. Temperature [1] -10 -15 -20 -25 0.5 0.9 1.1 FREQUENCY (GHz) -10 B SO GAIN (dB) 20 0.5 0.7 0 35 25 20 0.5 2 Input Return Loss vs. Temperature [1] 40 30 1.8 LE -40 0.2 30 TE -10 RETURN LOSS (dB) RESPONSE (dB) Vdd=5V Vdd=3V 10 -30 +25C +85C -40C 35 20 Amplifiers - Low Noise - SMT 40 40 +25C +85C -40C -20 -30 -40 -50 0.7 0.9 1.1 FREQUENCY (GHz) [1] Vdd = 5V, Rbias = 3.92K 1.3 1.5 -60 0.5 0.7 0.9 1.1 FREQUENCY (GHz) 1.3 1.5 [2] Vdd = 3V, Rbias = 3.92K For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-2 HMC718LP4 / 718LP4E v01.1008 7 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz Noise Figure vs. Temperature [1] [2] P1dB vs. Temperature [1] [2] 26 Vdd=5V Vdd=3V +85C 22 P1dB (dBm) 1.2 1 0.8 +25C +85C -40C 18 +25C TE 0.4 14 -40C Vdd=3V 12 0.5 0.2 0.7 0.9 1.1 FREQUENCY (GHz) 1.3 +25C +85C -40C B SO Vdd=5V Vdd=3V IP3 (dBm) 45 22 12 0.5 1.1 1.3 1.5 50 24 14 0.9 Output IP3 vs. Temperature [1] [2] 26 18 0.7 FREQUENCY (GHz) Psat vs. Temperature [1] [2] 20 1.5 LE 0.5 +25C +85C -40C 0.7 0.9 1.1 FREQUENCY (GHz) 1.3 Vdd=5V 40 35 30 Vdd=3V 25 0.5 1.5 Output IP3 and Idd vs. Supply Voltage @ 700 MHz [3] 0.7 0.9 1.1 FREQUENCY (GHz) 1.3 1.5 O Output IP3 and Idd vs. Supply Voltage @ 1300 MHz [3] 45 250 40 35 200 35 200 30 150 30 150 25 100 25 100 IP3 40 Idd1 Idd2 15 2.7 3.1 3.5 3.9 4.3 4.7 5.1 50 20 0 15 5.5 2.7 VOLTAGE SUPPLY (V) [1] Vdd = 5V, Rbias = 3.92K [2] Vdd = 3V, Rbias = 3.92K 300 IP3 250 Idd1 Idd2 50 0 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) [3] Rbias = 3.92K For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] Idd (mA) 20 Idd (mA) 300 45 IP3 (dBm) 20 16 0.6 16 7-3 Vdd=5V 24 IP3 (dBm) NOISE FIGURE (dB) 1.4 P1dB (dBm) Amplifiers - Low Noise - SMT 1.6 HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz 30 Pout Gain PAE 20 15 5 0 -25 -20 -15 INPUT POWER (dBm) -10 -5 -30 Pout Gain PAE -25 -20 -15 -10 INPUT POWER (dBm) -5 -24 -21 -18 -15 INPUT POWER (dBm) -12 -9 0.9 20 0.8 P1dB Gain 0.7 0.6 10 4.3 4.7 5 0 35 25 3.9 10 1.1 1 3.5 -25 -20 -15 INPUT POWER (dBm) -10 -5 5.1 5.5 [2] Vdd = 3V, Rbias = 3.92K 1.2 P1dB Gain NF 1.1 30 1 25 0.9 20 0.8 15 0.7 0.6 10 2.7 VOLTAGE SUPPLY (V) [1] Vdd = 5V, Rbias = 3.92K Pout Gain PAE 15 40 30 3.1 20 NOISE FIGURE (dB) O NF 15 25 1.2 NOISE FIGURE (dB) GAIN (dB) & P1dB (dBm) -27 Gain, Power & Noise Figure vs. Supply Voltage @ 1300 MHz [3] 40 2.7 0 -5 -30 0 Gain, Power & Noise Figure vs. Supply Voltage @ 700 MHz [3] 35 Pout (dBm), Gain (dB), PAE (%) 20 0 5 30 25 5 10 Power Compression @ 1300 MHz [2] B SO Pout (dBm), Gain (dB), PAE (%) 30 10 Pout Gain PAE 15 -5 -30 -5 Power Compression @ 1300 MHz [1] 15 20 LE -5 -30 25 TE 10 Amplifiers - Low Noise - SMT 30 Pout (dBm), Gain (dB), PAE (%) 35 GAIN (dB) & P1dB (dBm) Pout (dBm), Gain (dB), PAE (%) 35 25 7 Power Compression @ 700 MHz [2] Power Compression @ 700 MHz [1] 3.1 3.5 3.9 4.3 4.7 5.1 5.5 VOLTAGE SUPPLY (V) [3] Rbias = 3.92K For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-4 HMC718LP4 / 718LP4E v01.1008 7 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz Gain, Noise Figure & Rbias @ 900 MHz Output IP3 vs. Rbias @ 900 MHz 42 33 1.5 31 1.3 29 1.1 38 36 Vdd=3V Vdd=5V 27 0.9 Vdd=3V Vdd=5V TE GAIN (dB) IP3 (dBm) 40 25 34 32 10 100 Rbias (Ohms) 1000 10000 23 100 1000 10000 0.5 100000 Rbias (Ohms) O B SO LE 1 0.7 7-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] NOISE FIGURE (dB) Amplifiers - Low Noise - SMT 44 HMC718LP4 / 718LP4E GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz 7 Absolute Bias Resistor Range & Recommended Bias Resistor Values for Idd Rbias Ω 3V Min Max 1K [1] Open Circuit 5V 0 Open Circuit Idd1 (mA) Idd2 (mA) 2.7k 27 155 3.9k 32 155 10k 41 155 Recommended 820 67 166 3.92k 88 166 10k 92 166 TE Vdd (V) [1] Operation with Vdd= 3V and Rbias < 1K Ohm may result in the part becoming conditionally stable which is not recommended. Drain Bias Voltage (Vdd) 5.5 V -5 dBm Channel Temperature 175 °C Continuous Pdiss (T= 85 °C) (derate 20 mW/°C above 85 °C) 1.8 W B SO RF Input Power (RFIN) (Vdd = +5 Vdc) Typical Supply Current vs. Vdd (Rbias = 3.92k) LE Absolute Maximum Ratings Thermal Resistance (channel to ground paddle) 50 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C Vdd (V) Idd1 (mA) Idd2 (mA) 2.7 22 153 3.0 32 155 3.3 43 157 4.5 77 164 5.0 88 166 5.5 95 169 Amplifiers - Low Noise - SMT v01.1008 Note: Amplifier will operate over full voltage ranges shown above. O ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-6 HMC718LP4 / 718LP4E v01.1008 LE TE Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] B SO Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. O 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC718LP4 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 [1] HMC718LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 [2] Package Marking [3] H718 XXXX H718 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7-7 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz Description N/C No connection necessary. These pins may be connected to RF/DC ground without affecting performance. Interface Schematic 2 RFIN This pin is DC coupled and matched to 50 Ohms. 6 RES This pin is used to set the DC current of the amplifier by selection of external bias resistor. See application circuit. 17 RFOUT RF Output and DC BIAS for the second amplifier. See Application Circuit for off-chip components. 19 RFIN2 This pin is DC coupled. An off-chip DC blocking capacitor is required. LE B SO Pin Number TE Function 1, 3 - 5, 7 - 16, 18, 20, 22, 23 RFOUT1 This pin is matched to 50 Ohms. 24 Vdd Power Supply Voltage for the first amplifier. Choke inductor and bypass capacitors are required. See application circuit. O 21 Amplifiers - Low Noise - SMT 7 Pin Descriptions For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7-8 HMC718LP4 / 718LP4E v01.1008 B SO LE TE Application Circuit O Amplifiers - Low Noise - SMT 7 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz 7-9 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC718LP4 / 718LP4E v01.1008 GaAs PHEMT MMIC HIGH IP3 LOW NOISE AMPLIFIER, 0.6 - 1.4 GHz TE LE B SO List of Materials for Evaluation PCB 121128 Item J1 - J3 PCB Mount SMA Connector 2mm Vertical Molex Connector O J4 - J5 Description C1, C8, C12 220 pF Capacitor, 0402 Pkg. C3 10 nF Capacitor, 0402 Pkg. C4, C11 10 nF Capacitor, 0603 Pkg. C5, C13 1000 pF Capacitor, 0603 Pkg. C10 4.7 uF Capacitor, 0805 Pkg. L1 15 nH Inductor, 0402 Pkg. L2 18 nH Inductor, 0603 Pkg. L4 47 nH Inductor, 0603 Pkg. R1 Rbias Resistor, 0402 Pkg. R2, R3 0 Ohm Resistor, 0402 Pkg. U1 HMC718LP4(E) Amplifier PCB [2] 121126 Evaluation PCB Amplifiers - Low Noise - SMT 7 Evaluation PCB [1] The circuit board used in this application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Arlon 25FR For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7 - 10