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HMC452QS16G / 452QS16GE
v01.0205
11
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Typical Applications
Features
The HMC452QS16G / HMC452QS16GE is ideal for
applications requiring a high dynamic range amplifier:
Output IP3: +48 dBm
• GSM, GPRS & EDGE
9 dB Gain @ 2100 MHz
• CDMA & W-CDMA
53% PAE @ +31 dBm Pout
• CATV/Cable Modem
+24 dBm CDMA2000 Channel Power@ -45 dBc ACP
• Fixed Wireless & WLL
Single +5V Supply
22.5 dB Gain @ 400 MHz
LINEAR & POWER AMPLIFIERS - SMT
Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm2
General Description
Functional Diagram
The HMC452QS16G & HMC452QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipolar
Transistor (HBT) 1 watt MMIC power amplifiers
operating between 0.4 and 2.2 GHz. Packaged in a
miniature 16 lead QSOP plastic package, the amplifier gain is typically 22.5 dB at 0.4 GHz and 9 dB
at 2.1 GHz. Utilizing a minimum number of external
components and a single +5V supply, the amplifier
output IP3 can be optimized to +43 dBm at 0.4 GHz
or +48 dBm at 2.1 GHz. The power control (VPD)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE make
the HMC452QS16G(E)ideal power amplifiers for
Cellular/PCS/3G, WLL, ISM and Fixed Wireless
applications.
Electrical Specifi cations, TA = +25°C, Vs= +5V, VPD = +5V [1]
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
400 - 410
20
Gain Variation Over
Temperature
22.5
0.012
Typ.
Max.
Min.
450 - 496
19
0.02
21.5
0.012
Typ.
Max.
Min.
810 - 960
13
0.02
15.5
0.012
Typ.
Max.
Min.
1710 - 1990
7.5
0.02
10
0.012
6.5
0.02
Typ.
Max.
Units
2010 - 2170
MHz
9
dB
0.012
0.02
dB/C
Input Return Loss
13
15
9
17
11
dB
Output Return Loss
7
8
12
15
20
dB
31
dBm
32.5
dBm
48
dBm
Output Power for 1dB
Compression (P1dB)
27.5
Saturated Output
Power (Psat)
Output Third Order
Intercept (IP3) [2]
Noise Figure
30.5
27.5
31
40
43
30.5
27
31
41
44
30
28
31
45
48
31
28
31.5
45
48
45
7
7
7
7
7.5
dB
Supply Current (Icq)
485
485
485
485
485
mA
Control Current (IPD)
10
10
10
10
10
mA
[1] Specifications and data reflect HMC452QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone input power of -10 dBm per tone, 1 MHz spacing.
11 - 134
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 400 MHz
Gain vs. Temperature @ 400 MHz
20
10
S21
GAIN (dB)
RESPONSE (dB)
15
S11
5
S22
0
-5
-10
-15
0.1
0.2
0.3
0.4
0.5
0.6
0.7
25
24
23
22
21
20
19
18
17
16
15
14
13
12
0.35
+25 C
-40 C
0.37
0.39
0.41
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 400 MHz
Output Return Loss
vs. Temperature @ 400 MHz
+25 C
+85 C
-40 C
-6
RETURN LOSS (dB)
RETURN LOSS (dB)
-4
-8
-10
-12
0.43
0.45
-4
-6
-8
-10
-12
+25 C
+85 C
-40 C
-14
-14
0.37
0.39
0.41
0.43
-16
0.35
0.45
0.37
P1dB vs. Temperature @ 400 MHz
33
32
32
31
31
Psat (dBm)
34
33
30
+25 C
28
+85 C
-40 C
27
30
29
26
25
0.41
FREQUENCY (GHz)
+85 C
-40 C
27
25
0.39
+25 C
28
26
0.37
0.41
Psat vs. Temperature @ 400 MHz
34
29
0.39
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB (dBm)
0.45
-2
-2
24
0.35
0.43
0
0
-16
0.35
11
+85 C
0.43
0.45
LINEAR & POWER AMPLIFIERS - SMT
25
24
0.35
0.37
0.39
0.41
0.43
0.45
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 135
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Output IP3 vs. Temperature @ 400 MHz
10
48
9
46
8
NOISE FIGURE (dB)
50
OIP3 (dBm)
44
11
Noise Figure vs. Temperature @ 400 MHz
42
40
38
+25 C
36
+85 C
34
-40 C
5
+25 C
4
+85 C
3
-40 C
1
30
0.35
0.37
0.39
0.41
0.43
0
0.35
0.45
0.37
0.39
FREQUENCY (GHz)
+25 C
+85 C
-40 C
-20
-25
-30
-35
0.35
0.37
0.39
0.41
0.43
0.45
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
ISOLATION (dB)
-5
-15
0.45
50
45
40
35
30
25
20
Gain
P1dB
15
10
4.5
4.75
Psat
OIP3
5
FREQUENCY (GHz)
5.25
5.5
Vs (Vdc)
ACPR vs. Supply Voltage @ 400 MHz
W-CDMA , 64 DPCH
Power Compression @ 400 MHz
-10
55
50
-15
Pout
45
-20
Gain
PAE
40
W-CDMA
Frequency: 400 MHz
Integration BW: 3.84 MHz
64 DPCH
-25
ACPR (dBc)
35
30
25
20
-30
-35
4.5V
5V
-40
5.5V
-45
-50
15
-55
10
-60
5
-65
0
-10
0.43
Gain, Power & IP3
vs. Supply Voltage @ 400 MHz
0
-10
0.41
FREQUENCY (GHz)
Reverse Isolation
vs. Temperature @ 400 MHz
Pout (dBm), Gain (dB), PAE (%)
LINEAR & POWER AMPLIFIERS - SMT
6
2
32
Source ACPR
-70
-8
-6
-4
-2
0
2
4
6
INPUT POWER (dBm)
11 - 136
7
8
10
12
14
8
10
12
14
16
18
20
22
24
Channel Power (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
26
28
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 470 MHz
Gain vs. Temperature @ 470 MHz
24
25
23
20
22
21
20
10
S21
GAIN (dB)
S11
5
S22
0
-5
18
+25 C
17
+85 C
16
-40 C
11
15
14
-10
-15
0.1
19
13
0.2
0.3
0.4
0.5
0.6
12
0.43
0.7
0.45
0.47
0.49
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 470 MHz
Output Return Loss
vs. Temperature @ 470 MHz
0
0
-2
-2
0.51
0.53
0.51
0.53
-6
RETURN LOSS (dB)
RETURN LOSS (dB)
-4
+25 C
+85 C
-40 C
-8
-10
-12
-14
-4
-6
-8
-10
-12
+25 C
+85 C
-40 C
-16
-14
-18
-20
0.43
0.45
0.47
0.49
0.51
-16
0.43
0.53
0.45
FREQUENCY (GHz)
34
34
33
33
32
32
31
31
30
29
+25 C
+85 C
-40 C
27
26
30
29
+25 C
28
+85 C
-40 C
27
26
25
24
0.43
0.49
Psat vs. Temperature @ 470 MHz
Psat (dBm)
P1dB (dBm)
P1dB vs. Temperature @ 470 MHz
28
0.47
FREQUENCY (GHz)
LINEAR & POWER AMPLIFIERS - SMT
RESPONSE (dB)
15
25
0.45
0.47
0.49
FREQUENCY (GHz)
0.51
0.53
24
0.43
0.45
0.47
0.49
0.51
0.53
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 137
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Output IP3 vs. Temperature @ 470 MHz
10
48
9
46
8
NOISE FIGURE (dB)
50
42
40
+25 C
+85 C
38
-40 C
36
6
5
1
0.47
0.49
0.51
-40 C
3
32
0.45
+25 C
+85 C
4
2
0
0.43
0.53
0.45
0.47
FREQUENCY (GHz)
ISOLATION (dB)
-10
+25 C
+85 C
-40 C
-25
-30
-35
-40
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
-5
-20
0.51
0.53
Gain, Power & IP3
vs. Supply Voltage @ 470 MHz
0
-15
0.49
FREQUENCY (GHz)
Reverse Isolation
vs. Temperature @ 470 MHz
50
45
40
35
30
25
20
Gain
P1dB
15
10
4.5
4.75
Psat
OIP3
5
FREQUENCY (GHz)
5.25
5.5
Vs (Vdc)
ACPR vs. Supply Voltage @ 470 MHz
W-CDMA, 64 DPCH
Power Compression @ 470 MHz
-10
55
50
-15
Pout
45
-20
Gain
PAE
40
W-CDMA
Frequency: 470 MHz
Integration BW: 3.84 MHz
64 DPCH
-25
ACPR (dBc)
35
30
25
20
-30
-35
-40
4.5V
-45
5V
5.5V
-50
15
-55
10
-60
5
-65
0
-10
Source ACPR
-70
-8
-6
-4
-2
0
2
4
6
INPUT POWER (dBm)
11 - 138
7
34
30
0.43
Pout (dBm), Gain (dB), PAE (%)
LINEAR & POWER AMPLIFIERS - SMT
OIP3 (dBm)
44
11
Noise Figure vs. Temperature @ 470 MHz
8
10
12
14
8
10
12
14
16
18
20
22
24
Channel Power (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
26
28
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 900 MHz
Gain vs. Temperature @ 900 MHz
20
18
15
17
16
15
5
S21
GAIN (dB)
S11
0
S22
-5
14
13
11
+25 C
+85 C
12
-40 C
11
-10
10
-15
-20
0.4
9
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
8
0.7
1.4
0.75
0.8
0.85
0.9
0.95
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 900 MHz
Output Return Loss
vs. Temperature @ 900 MHz
1.05
1.1
1.05
1.1
1.05
1.1
0
0
-2
+25 C
+85 C
-40 C
-5
-4
+25 C
+85 C
-40 C
-6
RETURN LOSS (dB)
RETURN LOSS (dB)
1
-8
-10
-12
-10
-15
-20
-14
-16
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
-25
0.7
1.1
0.75
0.8
FREQUENCY (GHz)
34
34
32
32
30
30
28
+25 C
+85 C
-40 C
24
26
20
20
0.8
0.85
0.9
0.95
FREQUENCY (GHz)
1
1
1.05
1.1
+25 C
+85 C
-40 C
24
22
0.75
0.95
28
22
18
0.7
0.9
Psat vs. Temperature @ 900 MHz
Psat (dBm)
P1dB (dBm)
P1dB vs. Temperature @ 900 MHz
26
0.85
FREQUENCY (GHz)
LINEAR & POWER AMPLIFIERS - SMT
RESPONSE (dB)
10
18
0.7
0.75
0.8
0.85
0.9
0.95
1
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 139
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Output IP3 vs. Temperature @ 900 MHz
10
48
9
46
8
NOISE FIGURE (dB)
50
42
40
+25 C
+85 C
38
-40 C
36
7
6
5
4
+25 C
3
+85 C
34
2
-40 C
32
1
30
0.75
0.8
0.85
0.9
0.95
0
0.7
1
0.75
0.8
FREQUENCY (GHz)
+25 C
+85 C
-40 C
-20
-25
-30
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
ISOLATION (dB)
-5
-15
0.9
0.95
1
1.1
50
45
40
35
30
25
Gain
P1dB
Psat
OIP3
20
15
10
4.5
4.75
5
5.25
5.5
Vs (Vdc)
FREQUENCY (GHz)
ACPR vs. Supply Voltage @ 910 MHz
CDMA IS95, 9 Channels Forward
Gain, Power & IP3
vs. Supply Current @ 900 MHz*
55
-25
50
-30
45
CDMA IS95
Frequency: 910 MHz
Integration BW: 1.228 MHz
Forward Link, 9 Channels
-35
40
35
ACPR (dBc)
Gain
P1dB
Psat
OIP3
30
-40
5V
-45
4.5V
-50
25
-55
20
-60
15
-65
10
250
-70
5.5V
Source ACPR
300
350
400
Icq (mA)
450
500
12
14
16
18
20
22
24
Channel Power (dBm)
* Icq is controlled by varying VPD.
11 - 140
1.05
Gain, Power & IP3
vs. Supply Voltage @ 900 MHz
0
-10
0.85
FREQUENCY (GHz)
Reverse Isolation
vs. Temperature @ 900 MHz
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
LINEAR & POWER AMPLIFIERS - SMT
OIP3 (dBm)
44
11
Noise Figure vs. Temperature @ 900 MHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
26
28
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 1900 MHz
Gain vs. Temperature @ 1900 MHz
10
S21
S11
0
GAIN (dB)
RESPONSE (dB)
5
S22
-5
-10
-15
-20
-25
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
13
12
11
10
9
8
7
6
5
4
3
2
1
0
1.7
+85 C
-40 C
1.8
FREQUENCY (GHz)
+25 C
+85 C
-40 C
-10
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
2.1
2
2.1
0
-5
-15
-20
-25
-30
+25 C
+85 C
-40 C
-10
-15
-20
-25
-35
1.8
1.9
2
-30
1.7
2.1
1.8
FREQUENCY (GHz)
Psat vs. Temperature @ 1900 MHz
34
33
33
32
32
31
31
Psat (dBm)
34
30
29
28
+25 C
+85 C
-40 C
27
26
1.9
FREQUENCY (GHz)
P1dB vs. Temperature @ 1900 MHz
P1dB (dBm)
2
Output Return Loss
vs. Temperature @ 1900 MHz
0
30
29
28
+25 C
+85 C
-40 C
27
26
25
24
1.7
1.9
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 1900 MHz
-40
1.7
11
+25 C
LINEAR & POWER AMPLIFIERS - SMT
15
25
1.8
1.9
FREQUENCY (GHz)
2
2.1
24
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 141
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Output IP3 vs. Temperature @ 1900 MHz
10
50
9
48
8
NOISE FIGURE (dB)
52
OIP3 (dBm)
46
11
Noise Figure vs.
Temperature @ 1900 MHz
44
42
40
38
+25 C
36
+85 C
34
-40 C
5
4
3
+25 C
+85 C
2
-40 C
1.8
1.9
2
0
1.7
2.1
1.8
FREQUENCY (GHz)
ISOLATION (dB)
-15
1.8
1.9
2
2.1
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
+25 C
+85 C
-40 C
-10
-20
1.7
50
45
40
35
30
25
Gain
P1dB
Psat
OIP3
20
15
10
5
4.5
4.75
5
5.25
ACPR vs. Supply Voltage @ 1960 MHz
CDMA 2000, 9 Channels Forward
-25
45
-30
40
-35
35
-40
ACPR (dBc)
50
30
25
CDMA2000
Frequency: 1.96 GHz
Integration BW: 1.228 MHz
Forward Link, SR1, 9 Channels
-45
4.5V
-50
5V
5.5V
-55
Gain
P1dB
Psat
OIP3
-60
-65
10
Source ACPR
5
250
-70
300
350
400
Icq (mA)
450
500
14
16
18
20
22
24
Channel Power (dBm)
* Icq is controlled by varying VPD.
11 - 142
5.5
Vs (Vdc)
Gain, Power & IP3
vs. Supply Current @ 1900 MHz*
15
2.1
55
FREQUENCY (GHz)
20
2
Gain, Power & IP3
vs. Supply Voltage @ 1900 MHz
0
-5
1.9
FREQUENCY (GHz)
Reverse Isolation
vs. Temperature @ 1900 MHz
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
LINEAR & POWER AMPLIFIERS - SMT
6
1
32
30
1.7
7
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
26
28
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 2100 MHz
Gain vs. Temperature @ 2100 MHz
10
S21
S11
0
GAIN (dB)
RESPONSE (dB)
5
S22
-5
-10
-15
-20
-25
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
13
12
11
10
9
8
7
6
5
4
3
2
1
0
1.9
+85C
-40C
2
FREQUENCY (GHz)
2.2
2.3
-5
-4
+25C
+85C
-40C
-6
RETURN LOSS (dB)
RETURN LOSS (dB)
2.3
0
-2
-8
-10
-12
+25C
+85C
-40C
-10
-15
-20
-25
-14
2
2.1
2.2
-30
1.9
2.3
2
FREQUENCY (GHz)
Psat vs. Temperature @ 2100 MHz
34
33
33
32
32
31
31
Psat (dBm)
34
30
29
+25C
28
+85C
-40C
27
30
29
26
25
FREQUENCY (GHz)
+85C
-40C
27
25
2.1
+25C
28
26
2
2.1
FREQUENCY (GHz)
P1dB vs. Temperature @ 2100 MHz
P1dB (dBm)
2.2
Output Return Loss
vs. Temperature @ 2100 MHz
0
24
1.9
2.1
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 2100 MHz
-16
1.9
11
+25C
2.2
2.3
LINEAR & POWER AMPLIFIERS - SMT
15
24
1.9
2
2.1
2.2
2.3
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 143
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Output IP3 vs. Temperature @ 2100 MHz
Noise Figure vs.
Temperature @ 2100 MHz
54
10
52
9
50
8
NOISE FIGURE (dB)
46
44
42
40
+25C
38
+85C
36
-40C
6
5
+25C
+85C
4
-40C
3
1
32
30
1.9
2
2.1
2.2
0
1.9
2.3
2
FREQUENCY (GHz)
0
+25C
+85C
-40C
ISOLATION (dB)
-10
-15
-20
1.9
2
2.1
2.2
2.3
Gain, Power & IP3
vs. Supply Voltage @ 2100 MHz
2.2
2.3
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
Reverse Isolation
vs. Temperature @ 2100 MHz
-5
2.1
FREQUENCY (GHz)
55
50
45
40
35
30
25
Gain
P1dB
20
Psat
OIP3
15
10
5
4.5
4.75
5
5.25
5.5
Vs (Vdc)
FREQUENCY (GHz)
ACPR vs. Supply Voltage @ 2140 MHz
W-CDMA, 64 DPCH
Power Compression @ 2100 MHz
55
50
45
Pout
Gain
40
PAE
-20
4.5V
-25
W-CDMA
Frequency: 2.14 GHz
Integration BW: 3.84 MHz
64 DPCH
-30
35
ACPR (dBc)
30
25
20
15
-35
5V
-40
5.5V
-45
-50
10
-55
5
-60
0
10
12
14
16
18
20
22
INPUT POWER (dBm)
11 - 144
7
2
34
Pout (dBm), Gain (dB), PAE (%)
LINEAR & POWER AMPLIFIERS - SMT
11
OIP3 (dBm)
48
24
26
28
Source ACPR
-65
12
14
16
18
20
22
24
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
26
28
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Power Dissipation
Absolute Maximum Ratings
POWER DISSIPATION (W)
Max Pdiss @ +85C
2.5
1900 MHz
2
1.5
900 MHz
1
-5
0
5
10
15
20
Collector Bias Voltage (Vcc)
+6.0 Vdc
Control Voltage (Vpd)
+5.3 Vdc
RF Input Power (RFIN)(Vs = Vpd = +5Vdc)
+31 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 41.5 mW/°C above 85 °C)
2.7 W
Thermal Resistance
(junction to ground paddle)
24.1 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
INPUT POWER (dBm)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
11
LINEAR & POWER AMPLIFIERS - SMT
3
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC452QS16G
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC452QS16GE
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
H452
XXXX
[2]
H452
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 145
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Pin Descriptions
LINEAR & POWER AMPLIFIERS - SMT
11
Pin Number
Function
Description
Interface Schematic
1, 2, 4, 5,
7-10, 13-16
GND
These pins & package bottom must be connected to
RF/DC ground.
3
VPD
Power control pin. For maximum power, this pin should be
connected to 5V. A higher voltage is not recommended. For
lower idle current, this voltage can be reduced.
6
RFIN
This pin is DC coupled.
Off chip matching components are required.
See Application Circuit herein.
11, 12
RFOUT
RF output and DC Bias input for the output amplifier stage.
Off chip matching components are required.
See Application Circuit herein.
400 MHz Application Circuit
This circuit was used to specify the performance for 400-410 MHz operation. Contact the HMC Applications Group for
assistance in optimizing performance for your application.
Recommended Component Values
Note: C3 should be placed as close to pins as possible.
12 pF
100 pF
C4, C5
6.8 pF
C6
39 pF
C8, C9
2.2 μF
TL1
TL2
TL3
TL4
TL5
L1
47 nH
50 Ohm
50 Ohm
50 Ohm
50 Ohm
50 Ohm
L2
40 nH
Physical Length
0.11”
0.06”
0.12”
0.04”
0.16”
L3
4.7 nH
Electrical Length
3°
2°
3°
1°
4°
L4
5.6 nH
R1
5.1 Ohms
Impedance
PCB Material: 10 mil Rogers 4350, Er = 3.48
11 - 146
C1, C2
C3, C7
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
400 MHz Evaluation PCB
List of Materials for Evaluation PCB 110380-400 [1]
Item
Description
J1 - J2
PCB Mount SMA Connector
J3
2 mm DC Header
C1, C2
12 pF Capacitor, 0402 Pkg.
C3, C7
100 pF Capacitor, 0402 Pkg.
C4, C5
6.8 pF Capacitor, 0402 Pkg.
C6
39 pF Capacitor, 0402 Pkg.
C8, C9
2.2 μF Capacitor, Tantalum
L1
47 nH Inductor, 0603 Pkg.
L2
40 nH Inductor, 0402 Pkg.
L3
4.7 nH Inductor, 0402 Pkg.
L4
5.6 nH Inductor, 0402 Pkg.
R1
5.1 Ohm Resistor, 0402 Pkg.
U1
HMC452QS16G / HMC452QS16GE
Linear Amp
PCB [2]
110378 Evaluation PCB, 10 mils
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
LINEAR & POWER AMPLIFIERS - SMT
11
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 147
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
470 MHz Application Circuit
This circuit was used to specify the performance for 450-496 MHz operation. Contact the HMC Applications
Group for assistance in optimizing performance for your application.
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 148
Note: C3 should be placed as close to pins as possible.
TL1
TL2
TL3
TL4
TL5
Recommended Component Values
50 Ohm
50 Ohm
50 Ohm
50 Ohm
50 Ohm
C1, C2
12 pF
Physical Length
0.11”
0.06”
0.12”
0.04”
0.16”
C3, C7
100 pF
Electrical Length
3°
2°
3°
1°
4°
C4
6.8 pF
C5
5.6 pF
Impedance
PCB Material: 10 mil Rogers 4350, Er = 3.48
C6
39 pF
C8, C9
2.2 μF
L1
47 nH
L2
40 nH
L3
3.9 nH
L4
4.3 nH
R1
5.1 Ohms
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
470 MHz Evaluation PCB
List of Materials for Evaluation PCB 110381-470 [1]
Item
Description
J1 - J2
PCB Mount SMA Connector
J3
2 mm DC Header
C1, C2
12 pF Capacitor, 0402 Pkg.
C3, C7
100 pF Capacitor, 0402 Pkg.
C4
6.8 pF Capacitor, 0402 Pkg.
C5
5.6 pF Capacitor, 0402 Pkg.
C6
39 pF Capacitor, 0402 Pkg.
C8, C9
2.2 μF Capacitor, Tantalum
L1
47 nH Inductor, 0603 Pkg.
L2
40 nH Inductor, 0402 Pkg.
L3
3.9 nH Inductor, 0402 Pkg.
L4
4.3 nH Inductor, 0402 Pkg.
R1
5.1 Ohm Resistor, 0402 Pkg.
U1
HMC452QS16G / HMC452QS16GE
Linear Amp
PCB [2]
110378 Evaluation PCB, 10 mils
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
LINEAR & POWER AMPLIFIERS - SMT
11
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 149
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
900 MHz Application Circuit
This circuit was used to specify the performance for 810-960 MHz operation. Contact the HMC Applications
Group for assistance in optimizing performance for your application.
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 150
Note: C3 should be placed as close to pins as possible.
TL1
TL2
TL3
50 Ohm
50 Ohm
50 Ohm
C1
Physical Length
0.21”
0.19”
0.23”
C2, C6
5.6 pF
Electrical Length
11°
10°
12°
C3, C7
100 pF
C4
2.2 pF
Impedance
PCB Material: 10 mil Rogers 4350, Er = 3.48
Recommended Component Values
10 pF
C5
5 pF
C8, C9
2.2 μF
L1, L2
20 nH
R1
5.6 Ohm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
900 MHz Evaluation PCB
List of Materials for Evaluation PCB 108715-900 [1]
Item
Description
J1 - J2
PCB Mount SMA Connector
J3
2 mm DC Header
C1
10 pF Capacitor, 0402 Pkg.
C2, C6
5.6 pF Capacitor, 0402 Pkg.
C3, C7
100 pF Capacitor, 0402 Pkg.
C4
2.2 pF Capacitor, 0402 Pkg.
C5
5 pF Capacitor, 0402 Pkg.
C8, C9
2.2 μF Capacitor, Tantalum
L1, L2
20 nH Inductor, 0402 Pkg.
R1
5.6 Ohm Resistor, 0402 Pkg.
U1
HMC452QS16G / HMC452QS16GE
Linear Amp
PCB [2]
108713 Evaluation PCB, 10 mils
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
LINEAR & POWER AMPLIFIERS - SMT
11
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 151
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
1900 MHz Application Circuit
This circuit was used to specify the performance for 1710-1990 MHz operation. Contact the HMC Applications
Group for assistance in optimizing performance for your application.
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 152
Note: C2, C3 and C4 should be placed as close to pins as possible.
Impedance
Physical Length
Electrical Length
Recommended Component Values
TL1
TL2
50 Ohm
50 Ohm
C1
0.08”
C2
2 pF
9°
C3, C5, C6
100 pF
0.04”
4°
PCB Material: 10 mil Rogers 4350, Er = 3.48
2.7 pF
C4
3.3 pF
C7, C8
2.2 μF
L1, L2
20 nH
R1
5.6 Ohms
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
1900 MHz Evaluation PCB
List of Materials for Evaluation PCB 108703-1900 [1]
Item
Description
J1 - J2
PCB Mount SMA Connector
J3
2 mm DC Header
C1
2.7 pF Capacitor, 0402 Pkg.
C2
2 pF Capacitor, 0402 Pkg.
C3, C5, C6
100 pF Capacitor, 0402 Pkg.
C4
3.3 pF Capacitor, 0402 Pkg.
C7, C8
2.2 μF Capacitor, Tantalum
L1, L2
20 nH Inductor, 0402 Pkg.
R1
5.6 Ohm Resistor, 0402 Pkg.
U1
HMC452QS16G / HMC452QS16GE
Linear Amp
PCB [2]
108701 Evaluation PCB, 10 mils
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
LINEAR & POWER AMPLIFIERS - SMT
11
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 153
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
2100 MHz Application Circuit
This circuit was used to specify the performance for 2010-2170 MHz operation. Contact the HMC
Applications Group for assistance in optimizing performance for your application.
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 154
Note: C2, C3 and C4 should be placed as close to pins as possible.
TL1
TL2
Recommended Component Values
50 Ohm
50 Ohm
C1
Physical Length
0.04”
0.08”
C2
2 pF
Electrical Length
5°
10°
C3, C6
100 pF
C4
3.3 pF
Impedance
PCB Material: 10 mil Rogers 4350, Er = 3.48
4.7 pF
C5
15 pF
C7, C8
2.2 μF
L1
12 nH
L2
10 nH
R1
5.1 Ohms
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC452QS16G / 452QS16GE
v01.0205
InGaP HBT 1 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
2100 MHz Evaluation PCB
List of Materials for Evaluation PCB 111041-2100 [1]
Item
Description
J1 - J2
PCB Mount SMA Connector
J3
2 mm DC Header
C1
4.7 pF Capacitor, 0402 Pkg.
C2
2 pF Capacitor, 0402 Pkg.
C3, C6
100 pF Capacitor, 0402 Pkg.
C4
3.3 pF Capacitor, 0402 Pkg.
C5
15 pF Capacitor, 0402 Pkg.
C7, C8
2.2 μF Capacitor, Tantalum
L1
12 nH Inductor, 0402 Pkg.
L2
10 nH Inductor, 0402 Pkg.
R1
5.1 Ohm Resistor, 0402 Pkg.
U1
HMC452QS16G / HMC452QS16GE
Linear Amp
PCB [2]
111039 Evaluation PCB, 10 mils
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown
is available from Hittite upon request.
LINEAR & POWER AMPLIFIERS - SMT
11
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 155