Circuit Information -- MRF21010LSR1 1810-1870 MHz, 2.1 W, 28 V Narrowband C ...

Freescale Semiconductor
Technical Data
Available at http://www.freescale.com. Go to Support/
Reference Designs/Networking and Communications
Rev. 2, 12/2005
RF Reference Design Library
MRF21010LR1
MRF21010LSR1
Narrowband CDMA
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Device Characteristics (From Device Data Sheet)
Designed for W-CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To
be used in Class AB for PCN-PCS/cellular radio and WLL applications.
Reference Design Characteristics
Designed for Korean 2- carrier base station applications at frequencies from
1810 to 1870 MHz.
• Typical 2 - Carrier N - CDMA Performance for 1840 MHz, VDD = 28 Volts,
IDQ = 100 mA, Pout = 2.1 Watts Avg., f1 = 1840 MHz, f2 = 1842.5 MHz
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 2.1 Watts Avg.
Power Gain — 15.7 dB
ACPR — - 52 dB
IM3 — - 37 dBc
VGG
VDD
BIAS
BIAS
NARROWBAND CDMA
1810 - 1870 MHz
• Typical W - CDMA Performance: - 45 dBc ACPR, 2140 MHz, 28 Volts,
5 MHz Offset/4.096 MHz BW, 15 DTCH
Output Power — 2.1 Watts
Power Gain — 13.5 dB
Efficiency — 21%
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz,
10 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
RF
INPUT
RF
OUTPUT
MATCH
MATCH
MRF21010L REFERENCE DESIGN
Designed by: Bron Robinett
This reference design is designed to demonstrate the typical
RF performance characteristics of the MRF21010L when applied for the 1810-1870 MHz frequency band, using a 2-carrier, N-CDMA modulation scheme. The reference design is
tuned for performance at 2.1 Watts average output power,
VDD = 28 Volts, and IDQ = 100 mA.
REFERENCE DESIGN LIBRARY TERMS
AND CONDITIONS
Freescale is pleased to make this reference design available for your use in development and testing of your own
product or products, without charge. The reference design
contains easy - to - copy, fully functional amplifier designs.
Where possible, it consists of “no tune” distributed element
matching circuits designed to be as small as possible, in Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Reference Design Data
Freescale Semiconductor
cludes temperature compensated bias circuitry, and is designed to be used as “building blocks” for our customers.
HEATSINKING
When operating this fixture please provide adequate
heatsinking for the device. Excessive heating of the device will
prevent repeating of the included measurements.
NONLINEAR SIMULATION
To aid the design process and help reduce time to market
for our customers, Freescale provides device models for
several commercially available harmonic balance simulators.
Our model Library is available for all major computer platforms
supported by these simulators. For details on the RF model
library and supported harmonic balance simulators, go to the
following url:
http://www.freescale.com/rf/models
MRF21010LR1 MRF21010LSR1 Narrowband CDMA
1
T2
VGG
C1
R1
8
1
2
4
R6
R2
R5
+
VDD
+
C2
C3
C6
R4
Z4
C7
C8
Z5
T1
R3
R7
Z3
Z2
RF
INPUT
Z1
DUT
C10
Z6
Z7
RF
OUTPUT
C4
C9
C5
Figure 1. MRF21010L Narrowband CDMA Reference Design Schematic
Table 1. MRF21010L Narrowband CDMA Reference Design Component Designations and Values
Designation
Description
C1
1 µF, 50 V Tantalum Capacitor, Kemet
C2, C8
10 µF, 35 V Tantalum Capacitors, Kemet
C3, C10
10 pF Chip Capacitors, A Case, ATC 100 Series
C4, C6
10 pF Chip Capacitors, B Case, ATC 100 Series
C5, C9
0.4 - 2.5 pF Variable Capacitors, Johanson Gigatrim
C7
0.1 µF Chip Capacitor, Kemet
R1, R6, R7
10 W Chip Resistors (0810)
R2, R3
10 kW Chip Resistors (0810)
R4
2.2 kW Chip Resistor (0810)
R5
5 kW Variable Potentiometer (10 turn)
T1
Bipolar NPN Transistor, SOT - 23, #BC847
T2
Voltage Regulator, Micro - 8, #LP2951
Z1
1.1 x 16.9 mm Microstrip
Z2
10.3 x 3.1 mm Microstrip
Z3
16.4 x 9.9 mm Microstrip
Z4
1.1 x 20.0 mm Microstrip
Z5
1.1 x 21.7 mm Microstrip
Z6
22.0 x 10.3 mm Microstrip
Z7
3.5 x 16.7 mm Microstrip
Z8
1.5 x 3.4 mm Microstrip
PCB
Etched Circuit Board
Raw PCB Material
0.020” Taconic, RF - 35, 50 x 70 mm, er = 3.50
Bedstead
Copper Heatsink
MRF21010LR1 MRF21010LSR1 Narrowband CDMA
2
RF Reference Design Data
Freescale Semiconductor
C1
R1
T2
VGG
R2
R3
GND
C6 C7
VDD
R4
T1
C8
R5
C2
R6
R7
C3
C4
C10
C9
C5
MRF21010 @ 1.8 GHz
Rev. RD_01
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRF21010L Narrowband CDMA Reference Design PC Board Layout Diagram
MRF21010LR1 MRF21010LSR1 Narrowband CDMA
RF Reference Design Data
Freescale Semiconductor
3
η
28
−12
−16
IRL
−20
24
VDD = 28 Vdc
IDQ = 100 mA
Pout = 6 W (PEP)
f2 = f1 + 100 kHz
20
−24
Gps
16
−28
IMD
12
1810
1820
1830
1840
1850
f, FREQUENCY (MHz)
−32
1870
1860
−19
−24
−29
−34
−39
80 mA
−44
46
G ps, POWER GAIN (dB)
Gps
39
32
15.2
η
25
14.2
18
VDD = 28 Vdc
IDQ = 100 mA
f = 1840 MHz
IMD, INTERMODULATION DISTORTION (dBc)
16.2
h , DRAIN EFFICIENCY (%)
53
13.7
11
4
13.2
0
2
4
6
8
10
12
14
−54
0.1
1
10
Pout, OUTPUT POWER (WATTS) PEP
16
18
−23
−28
−33
−38
10 MHz
−43
1.0 MHz
−53
0.1
1
10
Pout, OUTPUT POWER (WATTS) PEP
60
16
Gps
IM3
Gps
η
−46
−54
ACPR
15
50
η
IM3 (dBc), ACPR (dBc)
G ps, POWER GAIN (dB)
−38
16
8
100
Figure 6. Intermodulation Distortion versus
Output Power
−30
20
VDD = 28 Vdc
IDQ = 100 mA
f1 = 1840 MHz
f2 = f1 + Offset
100 kHz
−48
Figure 5. Gain/Efficiency versus Output Power
12
100
−18
Pout, OUTPUT POWER (WATTS) CW
G ps , POWER GAIN (dB) h, DRAIN EFFICIENCY (%)
VDD = 28 Vdc
140 mA f1 = 1840 MHz
f2 = f1 + 100 kHz
120 mA
Figure 4. Intermodulation Distortion versus
Output Power
16.7
14.7
100 mA
−49
Figure 3. Two - Tone Broadband Performance
versus Frequency
15.7
IDQ = 60 mA
14
40
13
30
20
12
4
0
0.1
VDD = 28 Vdc, IDQ = 100 mA
f1 = 1840 MHz, f2 = 1842.5 MHz
1.2288 MHz Channel Bandwidth
Peak/Avg. = 9.8 dB @ 0.01% Probability
0.5
0.9
1.3
1.7
2.1
2.5
Pout, OUTPUT POWER (WATTS) AVG. N−CDMA
Figure 7. 2 - Carrier N - CDMA Performance
versus Output Power
−62
−70
2.9
Pout
VDD = 28 Vdc
IDQ = 100 mA
f = 1840 MHz
11
10
0.1
0.2
0.3
0.4
0.5
0.6
0.7
10
Pout , OUTPUT POWER (WATTS) PEP
h , DRAIN EFFICIENCY (%)
32
IMD, INTERMODULATION DISTORTION (dBc)
−8
36
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
G ps , POWER GAIN (dB) h, DRAIN EFFICIENCY (%)
CHARACTERISTICS
0
0.8
Pin, INPUT POWER (WATTS) CW
Figure 8. Output Power, Efficiency and Power
Gain versus Input Power
MRF21010LR1 MRF21010LSR1 Narrowband CDMA
4
RF Reference Design Data
Freescale Semiconductor
17
G ps, POWER GAIN (dB)
16.5
16
IDQ = 140 mA
120 mA
15.5
100 mA
15
80 mA
14.5
60 mA
14
0.1
VDD = 28 Vdc
f1 = 1840 MHz
f2 = f1 + 100 kHz
1
10
Pout, OUTPUT POWER (WATTS) PEP
100
Figure 9. Power Gain versus Output Power
MRF21010LR1 MRF21010LSR1 Narrowband CDMA
RF Reference Design Data
Freescale Semiconductor
5
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 Freescale Semiconductor, Inc. 2005. All rights reserved.
MRF21010LR1 MRF21010LSR1 Narrowband CDMA
Rev. 2, 12/2005
6
RF Reference Design Data
Freescale Semiconductor
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