Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 2, 12/2005 RF Reference Design Library MRF21010LR1 MRF21010LSR1 Narrowband CDMA RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Device Characteristics (From Device Data Sheet) Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications. Reference Design Characteristics Designed for Korean 2- carrier base station applications at frequencies from 1810 to 1870 MHz. • Typical 2 - Carrier N - CDMA Performance for 1840 MHz, VDD = 28 Volts, IDQ = 100 mA, Pout = 2.1 Watts Avg., f1 = 1840 MHz, f2 = 1842.5 MHz IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured over a 30 kHz Bandwidth at f1 - 885 Khz and f2 +885 kHz. Distortion Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF. Output Power — 2.1 Watts Avg. Power Gain — 15.7 dB ACPR — - 52 dB IM3 — - 37 dBc VGG VDD BIAS BIAS NARROWBAND CDMA 1810 - 1870 MHz • Typical W - CDMA Performance: - 45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Output Power — 2.1 Watts Power Gain — 13.5 dB Efficiency — 21% • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz, 10 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. RF INPUT RF OUTPUT MATCH MATCH MRF21010L REFERENCE DESIGN Designed by: Bron Robinett This reference design is designed to demonstrate the typical RF performance characteristics of the MRF21010L when applied for the 1810-1870 MHz frequency band, using a 2-carrier, N-CDMA modulation scheme. The reference design is tuned for performance at 2.1 Watts average output power, VDD = 28 Volts, and IDQ = 100 mA. REFERENCE DESIGN LIBRARY TERMS AND CONDITIONS Freescale is pleased to make this reference design available for your use in development and testing of your own product or products, without charge. The reference design contains easy - to - copy, fully functional amplifier designs. Where possible, it consists of “no tune” distributed element matching circuits designed to be as small as possible, in Freescale Semiconductor, Inc., 2005. All rights reserved. RF Reference Design Data Freescale Semiconductor cludes temperature compensated bias circuitry, and is designed to be used as “building blocks” for our customers. HEATSINKING When operating this fixture please provide adequate heatsinking for the device. Excessive heating of the device will prevent repeating of the included measurements. NONLINEAR SIMULATION To aid the design process and help reduce time to market for our customers, Freescale provides device models for several commercially available harmonic balance simulators. Our model Library is available for all major computer platforms supported by these simulators. For details on the RF model library and supported harmonic balance simulators, go to the following url: http://www.freescale.com/rf/models MRF21010LR1 MRF21010LSR1 Narrowband CDMA 1 T2 VGG C1 R1 8 1 2 4 R6 R2 R5 + VDD + C2 C3 C6 R4 Z4 C7 C8 Z5 T1 R3 R7 Z3 Z2 RF INPUT Z1 DUT C10 Z6 Z7 RF OUTPUT C4 C9 C5 Figure 1. MRF21010L Narrowband CDMA Reference Design Schematic Table 1. MRF21010L Narrowband CDMA Reference Design Component Designations and Values Designation Description C1 1 µF, 50 V Tantalum Capacitor, Kemet C2, C8 10 µF, 35 V Tantalum Capacitors, Kemet C3, C10 10 pF Chip Capacitors, A Case, ATC 100 Series C4, C6 10 pF Chip Capacitors, B Case, ATC 100 Series C5, C9 0.4 - 2.5 pF Variable Capacitors, Johanson Gigatrim C7 0.1 µF Chip Capacitor, Kemet R1, R6, R7 10 W Chip Resistors (0810) R2, R3 10 kW Chip Resistors (0810) R4 2.2 kW Chip Resistor (0810) R5 5 kW Variable Potentiometer (10 turn) T1 Bipolar NPN Transistor, SOT - 23, #BC847 T2 Voltage Regulator, Micro - 8, #LP2951 Z1 1.1 x 16.9 mm Microstrip Z2 10.3 x 3.1 mm Microstrip Z3 16.4 x 9.9 mm Microstrip Z4 1.1 x 20.0 mm Microstrip Z5 1.1 x 21.7 mm Microstrip Z6 22.0 x 10.3 mm Microstrip Z7 3.5 x 16.7 mm Microstrip Z8 1.5 x 3.4 mm Microstrip PCB Etched Circuit Board Raw PCB Material 0.020” Taconic, RF - 35, 50 x 70 mm, er = 3.50 Bedstead Copper Heatsink MRF21010LR1 MRF21010LSR1 Narrowband CDMA 2 RF Reference Design Data Freescale Semiconductor C1 R1 T2 VGG R2 R3 GND C6 C7 VDD R4 T1 C8 R5 C2 R6 R7 C3 C4 C10 C9 C5 MRF21010 @ 1.8 GHz Rev. RD_01 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21010L Narrowband CDMA Reference Design PC Board Layout Diagram MRF21010LR1 MRF21010LSR1 Narrowband CDMA RF Reference Design Data Freescale Semiconductor 3 η 28 −12 −16 IRL −20 24 VDD = 28 Vdc IDQ = 100 mA Pout = 6 W (PEP) f2 = f1 + 100 kHz 20 −24 Gps 16 −28 IMD 12 1810 1820 1830 1840 1850 f, FREQUENCY (MHz) −32 1870 1860 −19 −24 −29 −34 −39 80 mA −44 46 G ps, POWER GAIN (dB) Gps 39 32 15.2 η 25 14.2 18 VDD = 28 Vdc IDQ = 100 mA f = 1840 MHz IMD, INTERMODULATION DISTORTION (dBc) 16.2 h , DRAIN EFFICIENCY (%) 53 13.7 11 4 13.2 0 2 4 6 8 10 12 14 −54 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP 16 18 −23 −28 −33 −38 10 MHz −43 1.0 MHz −53 0.1 1 10 Pout, OUTPUT POWER (WATTS) PEP 60 16 Gps IM3 Gps η −46 −54 ACPR 15 50 η IM3 (dBc), ACPR (dBc) G ps, POWER GAIN (dB) −38 16 8 100 Figure 6. Intermodulation Distortion versus Output Power −30 20 VDD = 28 Vdc IDQ = 100 mA f1 = 1840 MHz f2 = f1 + Offset 100 kHz −48 Figure 5. Gain/Efficiency versus Output Power 12 100 −18 Pout, OUTPUT POWER (WATTS) CW G ps , POWER GAIN (dB) h, DRAIN EFFICIENCY (%) VDD = 28 Vdc 140 mA f1 = 1840 MHz f2 = f1 + 100 kHz 120 mA Figure 4. Intermodulation Distortion versus Output Power 16.7 14.7 100 mA −49 Figure 3. Two - Tone Broadband Performance versus Frequency 15.7 IDQ = 60 mA 14 40 13 30 20 12 4 0 0.1 VDD = 28 Vdc, IDQ = 100 mA f1 = 1840 MHz, f2 = 1842.5 MHz 1.2288 MHz Channel Bandwidth Peak/Avg. = 9.8 dB @ 0.01% Probability 0.5 0.9 1.3 1.7 2.1 2.5 Pout, OUTPUT POWER (WATTS) AVG. N−CDMA Figure 7. 2 - Carrier N - CDMA Performance versus Output Power −62 −70 2.9 Pout VDD = 28 Vdc IDQ = 100 mA f = 1840 MHz 11 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 Pout , OUTPUT POWER (WATTS) PEP h , DRAIN EFFICIENCY (%) 32 IMD, INTERMODULATION DISTORTION (dBc) −8 36 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) G ps , POWER GAIN (dB) h, DRAIN EFFICIENCY (%) CHARACTERISTICS 0 0.8 Pin, INPUT POWER (WATTS) CW Figure 8. Output Power, Efficiency and Power Gain versus Input Power MRF21010LR1 MRF21010LSR1 Narrowband CDMA 4 RF Reference Design Data Freescale Semiconductor 17 G ps, POWER GAIN (dB) 16.5 16 IDQ = 140 mA 120 mA 15.5 100 mA 15 80 mA 14.5 60 mA 14 0.1 VDD = 28 Vdc f1 = 1840 MHz f2 = f1 + 100 kHz 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 Figure 9. Power Gain versus Output Power MRF21010LR1 MRF21010LSR1 Narrowband CDMA RF Reference Design Data Freescale Semiconductor 5 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MRF21010LR1 MRF21010LSR1 Narrowband CDMA Rev. 2, 12/2005 6 RF Reference Design Data Freescale Semiconductor