Circuit Information -- MRF9060LR1 865-895 MHz, 60 W, 26 V Narrowband CDMA

Freescale Semiconductor
Technical Data
Available at http://www.freescale.com. Go to Support/
Reference Designs/Networking and Communications
Rev. 2, 12/2005
RF Reference Design Library
RF Power Field Effect Transistors
MRF9060LR1
MRF9060LSR1
Narrowband CDMA
N - Channel Enhancement - Mode Lateral MOSFETs
Device Characteristics (From Device Data Sheet)
Designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The high gain and broadband performance of these
devices makes them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
• Typical Two - Tone Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 17 dB
Efficiency — 40%
IMD — - 31 dBc
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
VGG
VDD
BIAS
BIAS
NARROWBAND CDMA
865- 895 MHZ
RF
INPUT
RF
OUTPUT
MATCH
MATCH
MRF9060L REFERENCE DESIGN
Designed by: David Runton and John Kinney
This reference design is designed to demonstrate the RF
performance characteristics of the MRF9060L when applied to
the 865 - 895 MHz narrowband CDMA frequency band. The
reference design is tuned for performance at 60 watts average output power, VDS = 26 volts, and IDQ = 600 mA.
REFERENCE DESIGN LIBRARY TERMS
AND CONDITIONS
Freescale is pleased to make this reference design available for your use in development and testing of your own
product or products, without charge. The reference design
contains easy - to - copy, fully functional amplifier designs.
Where possible, it consists of “no tune” distributed element
matching circuits designed to be as small as possible, includes temperature compensated bias circuitry, and is designed to be used as “building blocks” for our customers.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Reference Design Data
Freescale Semiconductor
HEATSINKING
When operating this fixture please provide adequate
heatsinking for the device. Excessive heating of the device will
prevent repeating of the included measurements.
NONLINEAR SIMULATION
To aid the design process and help reduce time to market
for our customers, Freescale provides device models for
several commercially available harmonic balance simulators.
Our model Library is available for all major computer platforms
supported by these simulators. For details on the RF model
library and supported harmonic balance simulators, go to the
following url:
http://www.freescale.com/rf/models
MRF9060LR1 MRF9060LSR1 Narrowband CDMA
1
R3
T2
T1
VGG
R2
+
C7
+
C1
R1
C2
C10
C3
R4
Z1
C6
Z4
Z2
Z5
C8
Z6
Z8
C13
Z9
Z3
C15
+
C11
Z10
Z7
+
C5
RF
INPUT
VDD
B1
R5
Z11
C4
C9
C14
Z12
Z13 C12
C16
C17
Z14
RF
OUTPUT
Figure 1. MRF9060L GSM EDGE and Narrowband CDMA Reference Design Schematic
Table 1. MRF9060L GSM EDGE and Narrowband CDMA Reference Design Component Designations and Values
Designation
Description
B1
Ferrite Bead, Fair Rite #2743019447
C1, C11
22 mF, 35 V Tantalum Chip Capacitors, Kemet
C2, C10
0.1 mF, 50 V Chip Capacitors (1210)
C3
27 pF, 50 V Chip Capacitor (0805)
C4, C15, C16
8.2 pF, 50 V Chip Capacitors, ACCU - P (0805)
C5, C7
1.0 mF, 35 V Tantalum Chip Capacitors, Kemet
C6, C12
47 pF, 50 V Chip Capacitors, ACCU - P (0805)
C8, C9
12 pF, 50 V Chip Capacitors, ACCU - P (0805)
C13, C14
10 pF, 50 V Chip Capacitors, ACCU - P (0805)
C17
0.4 - 2.5 pF Variable Capacitor, Gigatrim
R1, R3
2.7 kW Chip Resistors (0805)
R2
5.0 kW Trimpot
R4
10 W Chip Resistor (0805)
R5
3.3 kW Chip Resistor (0805)
T1
Voltage Regulator, Micro - 8, #LP2951
T2
PNP Bipolar Transistor, SOT - 23, #BC857
Z1
1.0 x 26.5 mm Microstrip
Z2
1.8 x 8.1 mm Microstrip
Z3
1.8 x 2.4 mm Microstrip
Z4
7.5 x 2.5 mm Microstrip
Z5
7.5 x 9.6 mm Microstrip
Z6
7.5 x 3.0 mm Microstrip
Z7
1.1 x 35.4 mm Microstrip
Z8
7.5 x 3.0 mm Microstrip
Z9
7.5 x 8.7 mm Microstrip
Z10
1.1 x 39.8 mm Microstrip
Z11
1.2 x 5.0 mm Microstrip
Z12
1.2 x 3.2 mm Microstrip
Z13
1.2 x 4.3 mm Microstrip
Z14
1.0 x 27.6 mm Microstrip
Bedstead
Copper Heatsink
Raw PCB
0.020″ Taconic RF - 35, 65 x 110 mm, n = 3.55
MRF9060LR1 MRF9060LSR1 Narrowband CDMA
2
RF Reference Design Data
Freescale Semiconductor
C1
R2
R5
R1
C3
C7
C11
B1
C5
C2
T2
T1
VGG
VDD
C10
R3
C6
R4
C8
C13
C4
C9
C14
C15
C12
C16
C17
MRF9060
Rev. RD02
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF9060L GSM EDGE and Narrowband CDMA Reference Design
PC Board Layout Diagram
MRF9060LR1 MRF9060LSR1 Narrowband CDMA
RF Reference Design Data
Freescale Semiconductor
3
0
η
34
−10
IRL
VDS = 26 Vdc
Pout = 60 W (PEP)
IDQ = 600 mA
f2 = f1 + 100 kHz
29
24 IMD
19
−30
−40
Gps
14
865
−20
IMD, INTERMODULATION DISTORTION (dBc)
39
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
G ps, POWER GAIN (dB) h , DRAIN EFFICIENCY (%)
CHARACTERISTICS
873
881
877
885
889
−35
IDQ = 400 mA
−40
800 mA
−45
500 mA
−50
600 mA
893
1
52
η
G ps, POWER GAIN (dB)
16.5
42
Gps
16
32
15.5
22
VDS = 26 Vdc
IDQ = 600 mA
f = 880 MHz
15
8
22
29
36
43
50
57
64
12
71
78
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Intermodulation Distortion versus Output
Power
h , DRAIN EFFICIENCY (%)
17
1
2
85
−31
10000 kHz
VDS = 26 Vdc
IDQ = 600 mA
f1 = 880 MHz
f2 = f1 + OFFSET
−36
−41
−46
1000 kHz
−51
1
Figure 5. Power Gain, Efficiency versus Output Power
17
10
Pout, OUTPUT POWER (WATTS) PEP
17.5
120
Pout
16
80
15.5
60
15
40
η
VDS = 26 Vdc
IDQ = 600 mA
f = 880 MHz
14.5
20
1
1.5
2
2.5
Pin, INPUT POWER (WATTS) CW
Figure 7. Power Gain, Efficiency, Output
Power versus Input Power
700 mA
16.9
16.7
600 mA
16.5
500 mA
16.3
16.1
400 mA
15.9
VDS = 26 Vdc
f1 = 880 MHz
f2 = 880.1 MHz
15.7
0
0.5
800 mA
17.1
G ps, POWER GAIN (dB)
100
Pout , OUTPUT POWER (WATTS)
h , DRAIN EFFICIENCY (%)
17.3
16.5
G ps, POWER GAIN (dB)
100
Figure 6. Intermodulation Distortion versus Output
Power
Gps
0
500 kHz
Offset = 100 kHz
−56
Pout, OUTPUT POWER (WATTS) CW
14
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 3. Class AB Broadband Circuit Performance
14.5
VDS = 26 Vdc
f1 = 880 MHz
f2 = 880.1 MHz
10
f, FREQUENCY (MHz)
15
700 mA
−55
−50
869
−30
3
15.5
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain versus Output Power
MRF9060LR1 MRF9060LSR1 Narrowband CDMA
4
RF Reference Design Data
Freescale Semiconductor
8
η
7
30
6
25
5
20
4
15
3
EVM
10
2
5
1
EVM − Source EVM 0
0
30.4 32.0 34.1 36.1 38.3 40.3 41.3 42.3 43.2 44.1 45.1 45.9 46.6
50
−30
VDS = 26 Vdc
IDQ = 600 mA
f = 880 MHz
IS−95, Pilot, Sync, Paging
Traffic Codes 8 through 13
−35
−40
−45
45
η
40
35
−50
30
−55
25
750 kHz
−60
20
−65
15
Gps
−70
10
−75
1.98 MHz
−80
1
10
Pout, OUTPUT POWER (dBm)
5
0
100
G ps, POWER GAIN (dB) h , DRAIN EFFICIENCY (%)
35
VDS = 26 Vdc
IDQ = 600 mA
f = 880 MHz
ACPR, ADJACENT CHANNEL POWER RATIO (dB)
h , DRAIN EFFICIENCY (%)
40
EVM, ERROR VECTOR MAGNITUDE (%)
9
45
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. Drain Efficiency and Error Vector
Magnitude versus Output Power
Figure 10. Power Gain, Efficiency and ACPR
versus Output Power
0
−10
1.23 MHz
Channel BW
−20
−30
−40
−50
−60
−70
−80
−IM3 @
−64 dB
−1.98 MHz BW
−100
Center 880 MHz
−90
−ACPR @
−45 dB
−750 kHz BW
+ACPR @
−45 dB
+750 kHz BW +IM3 @
−64 dB
+1.98 MHz BW
Span 5 MHz
VDS = 26 Vdc, IDQ = 600 mA, Pout (Avg.) = 15.6 W
Efficiency = 26.5%, Gain = 16.5 dB
IS−95 CDMA 1.23 MHz Channel Bandwidth
750 kHz: −45.0 dBc @ 30 kHz Bandwidth
1.98 MHz: −64.0 dBc @ 30 kHz Bandwidth
Figure 11. Single Carrier CDMA Spectrum
MRF9060LR1 MRF9060LSR1 Narrowband CDMA
RF Reference Design Data
Freescale Semiconductor
5
How to Reach Us:
Home Page:
www.freescale.com
E - mail:
[email protected]
USA/Europe or Locations Not Listed:
Freescale Semiconductor
Technical Information Center, CH370
1300 N. Alma School Road
Chandler, Arizona 85224
+1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130
[email protected]
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
[email protected]
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1 - 8 - 1, Shimo - Meguro, Meguro - ku,
Tokyo 153 - 0064
Japan
0120 191014 or +81 3 5437 9125
[email protected]
Asia/Pacific:
Freescale Semiconductor Hong Kong Ltd.
Technical Information Center
2 Dai King Street
Tai Po Industrial Estate
Tai Po, N.T., Hong Kong
+800 2666 8080
[email protected]
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
P.O. Box 5405
Denver, Colorado 80217
1 - 800 - 441 - 2447 or 303 - 675 - 2140
Fax: 303 - 675 - 2150
[email protected]
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer’s technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
 Freescale Semiconductor, Inc. 2005. All rights reserved.
MRF9060LR1 MRF9060LSR1 Narrowband CDMA
Rev. 2, 12/2005
6
RF Reference Design Data
Freescale Semiconductor
Similar pages