Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 2, 12/2005 RF Reference Design Library RF Power Field Effect Transistors MRF9060LR1 MRF9060LSR1 Narrowband CDMA N - Channel Enhancement - Mode Lateral MOSFETs Device Characteristics (From Device Data Sheet) Designed for broadband commercial and industrial applications at frequencies up to 1000 MHz. The high gain and broadband performance of these devices makes them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. • Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 17 dB Efficiency — 40% IMD — - 31 dBc • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. VGG VDD BIAS BIAS NARROWBAND CDMA 865- 895 MHZ RF INPUT RF OUTPUT MATCH MATCH MRF9060L REFERENCE DESIGN Designed by: David Runton and John Kinney This reference design is designed to demonstrate the RF performance characteristics of the MRF9060L when applied to the 865 - 895 MHz narrowband CDMA frequency band. The reference design is tuned for performance at 60 watts average output power, VDS = 26 volts, and IDQ = 600 mA. REFERENCE DESIGN LIBRARY TERMS AND CONDITIONS Freescale is pleased to make this reference design available for your use in development and testing of your own product or products, without charge. The reference design contains easy - to - copy, fully functional amplifier designs. Where possible, it consists of “no tune” distributed element matching circuits designed to be as small as possible, includes temperature compensated bias circuitry, and is designed to be used as “building blocks” for our customers. Freescale Semiconductor, Inc., 2005. All rights reserved. RF Reference Design Data Freescale Semiconductor HEATSINKING When operating this fixture please provide adequate heatsinking for the device. Excessive heating of the device will prevent repeating of the included measurements. NONLINEAR SIMULATION To aid the design process and help reduce time to market for our customers, Freescale provides device models for several commercially available harmonic balance simulators. Our model Library is available for all major computer platforms supported by these simulators. For details on the RF model library and supported harmonic balance simulators, go to the following url: http://www.freescale.com/rf/models MRF9060LR1 MRF9060LSR1 Narrowband CDMA 1 R3 T2 T1 VGG R2 + C7 + C1 R1 C2 C10 C3 R4 Z1 C6 Z4 Z2 Z5 C8 Z6 Z8 C13 Z9 Z3 C15 + C11 Z10 Z7 + C5 RF INPUT VDD B1 R5 Z11 C4 C9 C14 Z12 Z13 C12 C16 C17 Z14 RF OUTPUT Figure 1. MRF9060L GSM EDGE and Narrowband CDMA Reference Design Schematic Table 1. MRF9060L GSM EDGE and Narrowband CDMA Reference Design Component Designations and Values Designation Description B1 Ferrite Bead, Fair Rite #2743019447 C1, C11 22 mF, 35 V Tantalum Chip Capacitors, Kemet C2, C10 0.1 mF, 50 V Chip Capacitors (1210) C3 27 pF, 50 V Chip Capacitor (0805) C4, C15, C16 8.2 pF, 50 V Chip Capacitors, ACCU - P (0805) C5, C7 1.0 mF, 35 V Tantalum Chip Capacitors, Kemet C6, C12 47 pF, 50 V Chip Capacitors, ACCU - P (0805) C8, C9 12 pF, 50 V Chip Capacitors, ACCU - P (0805) C13, C14 10 pF, 50 V Chip Capacitors, ACCU - P (0805) C17 0.4 - 2.5 pF Variable Capacitor, Gigatrim R1, R3 2.7 kW Chip Resistors (0805) R2 5.0 kW Trimpot R4 10 W Chip Resistor (0805) R5 3.3 kW Chip Resistor (0805) T1 Voltage Regulator, Micro - 8, #LP2951 T2 PNP Bipolar Transistor, SOT - 23, #BC857 Z1 1.0 x 26.5 mm Microstrip Z2 1.8 x 8.1 mm Microstrip Z3 1.8 x 2.4 mm Microstrip Z4 7.5 x 2.5 mm Microstrip Z5 7.5 x 9.6 mm Microstrip Z6 7.5 x 3.0 mm Microstrip Z7 1.1 x 35.4 mm Microstrip Z8 7.5 x 3.0 mm Microstrip Z9 7.5 x 8.7 mm Microstrip Z10 1.1 x 39.8 mm Microstrip Z11 1.2 x 5.0 mm Microstrip Z12 1.2 x 3.2 mm Microstrip Z13 1.2 x 4.3 mm Microstrip Z14 1.0 x 27.6 mm Microstrip Bedstead Copper Heatsink Raw PCB 0.020″ Taconic RF - 35, 65 x 110 mm, n = 3.55 MRF9060LR1 MRF9060LSR1 Narrowband CDMA 2 RF Reference Design Data Freescale Semiconductor C1 R2 R5 R1 C3 C7 C11 B1 C5 C2 T2 T1 VGG VDD C10 R3 C6 R4 C8 C13 C4 C9 C14 C15 C12 C16 C17 MRF9060 Rev. RD02 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF9060L GSM EDGE and Narrowband CDMA Reference Design PC Board Layout Diagram MRF9060LR1 MRF9060LSR1 Narrowband CDMA RF Reference Design Data Freescale Semiconductor 3 0 η 34 −10 IRL VDS = 26 Vdc Pout = 60 W (PEP) IDQ = 600 mA f2 = f1 + 100 kHz 29 24 IMD 19 −30 −40 Gps 14 865 −20 IMD, INTERMODULATION DISTORTION (dBc) 39 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) G ps, POWER GAIN (dB) h , DRAIN EFFICIENCY (%) CHARACTERISTICS 873 881 877 885 889 −35 IDQ = 400 mA −40 800 mA −45 500 mA −50 600 mA 893 1 52 η G ps, POWER GAIN (dB) 16.5 42 Gps 16 32 15.5 22 VDS = 26 Vdc IDQ = 600 mA f = 880 MHz 15 8 22 29 36 43 50 57 64 12 71 78 IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Intermodulation Distortion versus Output Power h , DRAIN EFFICIENCY (%) 17 1 2 85 −31 10000 kHz VDS = 26 Vdc IDQ = 600 mA f1 = 880 MHz f2 = f1 + OFFSET −36 −41 −46 1000 kHz −51 1 Figure 5. Power Gain, Efficiency versus Output Power 17 10 Pout, OUTPUT POWER (WATTS) PEP 17.5 120 Pout 16 80 15.5 60 15 40 η VDS = 26 Vdc IDQ = 600 mA f = 880 MHz 14.5 20 1 1.5 2 2.5 Pin, INPUT POWER (WATTS) CW Figure 7. Power Gain, Efficiency, Output Power versus Input Power 700 mA 16.9 16.7 600 mA 16.5 500 mA 16.3 16.1 400 mA 15.9 VDS = 26 Vdc f1 = 880 MHz f2 = 880.1 MHz 15.7 0 0.5 800 mA 17.1 G ps, POWER GAIN (dB) 100 Pout , OUTPUT POWER (WATTS) h , DRAIN EFFICIENCY (%) 17.3 16.5 G ps, POWER GAIN (dB) 100 Figure 6. Intermodulation Distortion versus Output Power Gps 0 500 kHz Offset = 100 kHz −56 Pout, OUTPUT POWER (WATTS) CW 14 100 Pout, OUTPUT POWER (WATTS) PEP Figure 3. Class AB Broadband Circuit Performance 14.5 VDS = 26 Vdc f1 = 880 MHz f2 = 880.1 MHz 10 f, FREQUENCY (MHz) 15 700 mA −55 −50 869 −30 3 15.5 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 8. Power Gain versus Output Power MRF9060LR1 MRF9060LSR1 Narrowband CDMA 4 RF Reference Design Data Freescale Semiconductor 8 η 7 30 6 25 5 20 4 15 3 EVM 10 2 5 1 EVM − Source EVM 0 0 30.4 32.0 34.1 36.1 38.3 40.3 41.3 42.3 43.2 44.1 45.1 45.9 46.6 50 −30 VDS = 26 Vdc IDQ = 600 mA f = 880 MHz IS−95, Pilot, Sync, Paging Traffic Codes 8 through 13 −35 −40 −45 45 η 40 35 −50 30 −55 25 750 kHz −60 20 −65 15 Gps −70 10 −75 1.98 MHz −80 1 10 Pout, OUTPUT POWER (dBm) 5 0 100 G ps, POWER GAIN (dB) h , DRAIN EFFICIENCY (%) 35 VDS = 26 Vdc IDQ = 600 mA f = 880 MHz ACPR, ADJACENT CHANNEL POWER RATIO (dB) h , DRAIN EFFICIENCY (%) 40 EVM, ERROR VECTOR MAGNITUDE (%) 9 45 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. Drain Efficiency and Error Vector Magnitude versus Output Power Figure 10. Power Gain, Efficiency and ACPR versus Output Power 0 −10 1.23 MHz Channel BW −20 −30 −40 −50 −60 −70 −80 −IM3 @ −64 dB −1.98 MHz BW −100 Center 880 MHz −90 −ACPR @ −45 dB −750 kHz BW +ACPR @ −45 dB +750 kHz BW +IM3 @ −64 dB +1.98 MHz BW Span 5 MHz VDS = 26 Vdc, IDQ = 600 mA, Pout (Avg.) = 15.6 W Efficiency = 26.5%, Gain = 16.5 dB IS−95 CDMA 1.23 MHz Channel Bandwidth 750 kHz: −45.0 dBc @ 30 kHz Bandwidth 1.98 MHz: −64.0 dBc @ 30 kHz Bandwidth Figure 11. Single Carrier CDMA Spectrum MRF9060LR1 MRF9060LSR1 Narrowband CDMA RF Reference Design Data Freescale Semiconductor 5 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MRF9060LR1 MRF9060LSR1 Narrowband CDMA Rev. 2, 12/2005 6 RF Reference Design Data Freescale Semiconductor