Circuit Information -- MRF9045NR1 920-960 MHz, 45 W, 28 V GSM/EDGE

Freescale Semiconductor
Technical Data
Available at http://www.freescale.com. Go to Support/
Reference Designs/Networking and Communications
Rev. 2, 12/2005
N - Channel Enhancement - Mode Lateral MOSFETs
Device Characteristics (From Device Data Sheet)
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment.
• Typical Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 19 dB
Efficiency — 41% (Two Tones)
IMD — - 31 dBc
• Integrated ESD Protection
• Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,
45 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
• N Suffix Indicates Lead - Free Terminations
• 200_C Capable Plastic Package
Reference Design Characteristics
• Typical GSM Performance at 960 MHz, 28 Volts and IDQ = 350 mA, Full
Frequency Band
• Typical Performance for GSM Frequencies, 925 to 960 MHz, 28 Volts
Output Power @ P1db — 50 Watts
Power Gain @ P1db — 18.6 dB
Efficiency @ P1db — 54%
MRF9045NR1
MRF9045NBR1
MRF9045MR1
MRF9045MBR1
GSM/GSM EDGE
GSM/GSM EDGE
920 - 960 MHz
VGG
VDD
BIAS
RF Power Field Effect Transistors
BIAS
RF Reference Design Library
RF
INPUT
RF
OUTPUT
MATCH
MATCH
MRF9045N(M) GSM/GSM EDGE 920 - 960 MHz REFERENCE DESIGN
Designed by: Darin Wagner
This reference design is designed to demonstrate the typical
RF performance characteristics of the MRF9045N(M) when
applied for the GSM/GSM EDGE 920-960 MHz frequency
band. The reference design is tuned to offer the best
tradeoff between good EDGE linearity and good GSM
power capability and efficiency. It is biased at VDD = 28 Volts
and I DQ = 350 mA, but data are given to derive the
performances under different biasing and temperature
conditions.
REFERENCE DESIGN LIBRARY TERMS
AND CONDITIONS
Freescale is pleased to make this reference design avail-
 Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF9045NR1
RF Reference Design Data
Freescale Semiconductor
able for your use in development and testing of your own
product or products, without charge. The reference design
contains easy - to - copy, fully functional amplifier designs.
Where possible, it consists of “no tune” distributed element
matching circuits designed to be as small as possible, includes temperature compensated bias circuitry, and is designed to be used as “building blocks” for our customers.
HEATSINKING
When operating this fixture please provide adequate
heatsinking for the device. Excessive heating of the device will
prevent repeating of the included measurements.
MRF9045NBR1 MRF9045MR1 MRF9045MBR1 GSM/GSM EDGE
1
EDGE
NONLINEAR SIMULATION
The Enhanced Data rate through GSM Evolution aims at increasing the user data rate by using an 8PSK modulation
scheme. This nonconstant envelope signal description and
the corresponding BTS specifications are found in the following standards documents:
• GSM 05.04: “Digital Cellular Telecommunications System (Phase 2+); Modulation.”
• 3GPP TS 45.005 V5.0.0 (2001 - 06): “Digital Cellular
Telecommunications Systems (Phase 2+); Radio Transmission and Reception (Release 5).
To aid the design process and help reduce time to market
for our customers, Freescale provides device models for
several commercially available harmonic balance simulators.
Our model Library is available for all major computer platforms
supported by these simulators. For details on the RF model
library and supported harmonic balance simulators, go to the
following url:
http://www.freescale.com/rf/models
MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 GSM/GSM EDGE
2
RF Reference Design Data
Freescale Semiconductor
R3
U1
R1
+
RF
INPUT
IN
C16
C15
C14
Q1
Z12
C1
Z2
Z3
Z4
C2 C3
Z1
Z2
Z3
Z4
Z5
Z6
0.044″
0.069″
0.178″
0.178″
0.348″
0.424″
DUT
Z5
C4
x 0.174″
x 0.490″
x 0.521″
x 0.348″
x 0.615″
x 0.174″
C13
+
VDD
R4
C12 C9 C10 C11
Z11
R2
Z1
OUT
B1
Z6
Z7
C5
Microstrip
Microstrip
Microstrip
x 0.147″ Taper
Microstrip
Microstrip
Z7
Z8
Z9
Z10
Z11
Z12
Z8
Z9
C6
C7
0.044″
0.044″
0.044″
0.044″
0.044″
0.044″
C8
x 0.465″
x 0.215″
x 0.418″
x 0.204″
x 0.895″
x 0.821″
RF
OUTPUT
Z10
R5
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Figure 1. MRF9045N(M) Test Circuit Schematic
Table 1. MRF9045N(M) Test Circuit Component Designations and Values
Designators
Description
B1
Short Ferrite Bead
C1, C8, C9, C14
43 pF Chip Capacitors, A Case, ACCU - P
C2
4.7 pF Chip Capacitor, B Case, AVX
C3
5.1 pF Chip Capacitor, B Case, AVX
C4
16 pF Chip Capacitor, B Case, AVX
C5, C12
10 pF Chip Capacitors, B Case, AVX
C6, C7
2.2 pF Chip Capacitors, B Case, AVX
C10, C13, C15
0.1 µF Chip Capacitors, B Case
C11, C16
22 µF Tantalum Capacitors
Q1
PNP General Purpose Transistor, #BC857ALT1
R1
3.92 Ω Chip Resistor (0805)
R2
10 Ω Chip Resistor (0805)
R3, R5
2.2 Ω Chip Resistors (0805)
R4
5 Ω Potentiometer
U1
Power Voltage Regulator, #LP2951
MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 GSM/GSM EDGE
RF Reference Design Data
Freescale Semiconductor
3
B1
U1
R3
R4
C13
R1
C16
R5
C11
Q1
C15
C10
C9
C14
C12
R2
C1
C2
C5
C3
C6
C7
C8
C4
MRF9045M
Rev RD03
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF9045N(M) Test Circuit Component Layout
MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 GSM/GSM EDGE
4
RF Reference Design Data
Freescale Semiconductor
CHARACTERISTICS
20
19.5
550 mA
19
450 mA
Gps
50
19
40
h
18.5
18.5 350 mA
18
30
18
20
VDD = 28 Vdc
IDQ = 550 mA
f = 945 MHz
17.5
VDD = 28 Vdc
f = 945 MHz
17.5
17
1
10
100
1
10
Pout, OUTPUT POWER (WATTS) CW
30
50
0
60
Figure 4. Power Gain and Drain Efficiency
versus Output Power
60
−8
h
55
−9
50
−10
45
−11
IRL
40
−12
VDD = 28 Vdc
Pout = 50 W
IDQ = 575 mA
35
30
25
−13
−14
−15
Gps
20
−16
15
10
915
40
Pout, OUTPUT POWER (WATTS) CW
Figure 3. Power Gain versus Output Power
G ps , POWER GAIN (dB) h, DRAIN EFFICIENCY (%)
20
10
IRL, INPUT RETURN LOSS (dB)
17
60
19.5
650 mA
G ps , POWER GAIN (dB)
G ps , POWER GAIN (dB)
20
IDQ = 750 mA
h, DRAIN EFFICIENCY (%)
20.5
−17
920
925
930
935
940
945
950
955
960
−18
965
f, FREQUENCY (MHz)
Figure 5. CW Performance
MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 GSM/GSM EDGE
RF Reference Design Data
Freescale Semiconductor
5
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 Freescale Semiconductor, Inc. 2005. All rights reserved.
MRF9045NR1 MRF9045NBR1 MRF9045MR1 MRF9045MBR1 GSM/GSM EDGE
Rev. 2, 12/2005
6
RF Reference Design Data
Freescale Semiconductor
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