Circuit Information -- MRFG35003AN6T1 2.4-2.5 GHz, 400 mWatt, 6 V Wideband C ...

Freescale Semiconductor
Technical Data
Available at http://www.freescale.com/rf, Go to Tools
Rev. 1, 6/2005
RF Reference Design Library
Gallium Arsenide PHEMT
MRFG35003N6T1
MRFG35003M6T1
BWA
RF Power Field Effect Transistor
Device Characteristics (From Device Data Sheet)
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in
Class AB Customer Premise Equipment (CPE) applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts,
IDQ = 180 mA
Output Power — 450 mWatts
Power Gain — 9 dB
Efficiency — 24%
• 3 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• N Suffix Indicates Lead - Free Terminations
• In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
Reference Design Characteristics
• Typical Single - Channel W - CDMA Performance: - 44 dBc ACPR,
2.45 GHz, 6 Volts, IDQ = 200 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH
(8.5 dB P/A @ 0.01% Probability)
Output Power — 400 mWatt
Power Gain — 13 dB
Efficiency — 25%
BWA
2.4 - 2.5 GHz
VGG
VDD
BIAS
BIAS
BLOCK DIAGRAM
RF
INPUT
RF
OUTPUT
MATCH
MATCH
MRFG35003N6T1(M6T1) BWA 2.4 - 2.5 GHz REFERENCE DESIGN
Designed by: Thang Trieu and Rick Hooper
This reference design is designed to demonstrate the typical RF performance characteristics of the
MRFG35003N6T1(M6T1) when applied for the 2.4 - 2.5 GHz
W - CDMA frequency band. The reference design is tuned for
the best tradeoff between good W - CDMA linearity and good
power capability and efficiency.
REFERENCE DESIGN LIBRARY TERMS
AND CONDITIONS
Freescale is pleased to make this reference design available for your use in development and testing of your own
product or products, without charge. The reference design
contains easy - to - copy, fully functional amplifier designs.
Where possible, it consists of “no tune” distributed element
matching circuits designed to be as small as possible, includes temperature compensated bias circuitry, and is designed to be used as “building blocks” for our customers.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Reference Design Data
Freescale Semiconductor
HEATSINKING
When operating this fixture please provide adequate heatsinking for the device. Excessive heating of the device will
prevent repeating of the included measurements.
NONLINEAR SIMULATION
To aid the design process and help reduce time to market
for our customers, Freescale provides device models for
several commercially available harmonic balance simulators.
Our model Library is available for all major computer platforms
supported by these simulators. For details on the RF model
library and supported harmonic balance simulators, go to the
following url:
http://www.freescale.com/rf/models
MRFG35003N6T1 MRFG35003M6T1 BWA
1
VGS
VDD
C12
C11
C10
C9
C8
C18
C6 C7
C19 C20
C4 C5
C21 C22
Z16
C17
C16
C15
C14
Z17
R1
RF
INPUT
C2
Z1
Z2
C3
Z3
C13
Z4
Z5
Z6 Z7 Z8
Z9
Z10
C31
C23
Z11
Z12
C32
C27
RF
OUTPUT
C24
Z13
Z14
C1
Z15
C25
C30
Z1, Z5, Z14
Z2
Z3
Z4
Z6
Z7
Z8
Z9
C29
0.044″
0.044″
0.067″
0.316″
0.020″
0.208″
0.020″
0.586″
C28
x 0.125″ Microstrip
x 0.115″ Microstrip
x 0.393″ Microstrip
x 0.317″ Microstrip
x 0.037″ Microstrip
x 0.103″ Microstrip
x 0.050″ Microstrip
x 0.210″ Microstrip
Z10
Z11
Z12
Z13
Z15
Z16, Z17
PCB
C26
0.619″ x 0.330″ Microstrip
0.235″ x 0.273″ Microstrip
0.396″ x 0.344″ Microstrip
0.067″ x 0.271″ Microstrip
0.044″ x 0.132″ Microstrip
0.015″ x 0.759″ Microstrip
Rogers 4350, 0.020″, εr = 3.50
Figure 1. MRFG35003N6T1(M6T1) BWA Reference Design
Table 1. MRFG35003N6T1(M6T1) BWA Reference Design Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
C1, C25
13 pF Chip Capacitors
100A130JP150X
ATC
C2, C28
1.2 pF Chip Capacitors
08051J1R2BBT
AVX
C3, C23, C27, C29, C31, C32
0.3 pF Chip Capacitors
08051J0R3BBT
AVX
C4, C5, C21, C22
5.6 pF Chip Capacitors
08051J5R6BBT
AVX
C6, C20
10 pF Chip Capacitors
100A100JP150X
ATC
C7, C19
100 pF Chip Capacitors
100A101JP150X
ATC
C8, C18
100 pF Chip Capacitors
100B101JP500X
ATC
C9, C17
1000 pF Chip Capacitors
100B102JP500X
ATC
C10, C16
39K pF Chip Capacitors
200B393KP500X
ATC
C11, C15
0.1 µF Chip Capacitors
CDR33BX104AKWS
Kemet
C12, C14
22 µF Tantalum Capacitors
T491X226K035AS
Kemet
C13
1.0 pF Chip Capacitor
08051J1R0BBT
AVX
C24, C26
0.9 pF Chip Capacitors
08051J0R9GBT
AVX
C30
1.5 pF Chip Capacitor
08051J1R5BBT
AVX
R1
100 W, 1/4 W 1% Chip Resistor
D55342M07B101JOR
Vishay
MRFG35003N6T1 MRFG35003M6T1 BWA
2
RF Reference Design Data
Freescale Semiconductor
C12
C11
C10
C9
C15
C8
C16
C7
C17
C20
C21
C5
C13
C14
C22
C31
R1
C23
C3
C1
C18
C6
C4
C2
C19
C24
C25
C29
C27
C30
C28
C26
C32
MRFG35003M6
Rev 1
2.4 − 2.5 GHz
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale
Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the
transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. MRFG35003N6T1(M6T1) BWA Reference Design Component Layout
MRFG35003N6T1 MRFG35003M6T1 BWA
RF Reference Design Data
Freescale Semiconductor
3
CHARACTERISTICS
G T , TRANSDUCER GAIN (dB)
15
45
GT
14
13
12
11
40
MRFG35003M6 @ 2.5 GHz
VDS = 6 Vdc, IDQ = 200 mA
f = 2.5 GHz, 8.5 P/A 3GPP W−CDMA
ΓS = 0.889é−155.97_
ΓL = 0.907é−165.42_
PAE
35
30
25
10
20
9
15
8
0
−10
−10
IRL
−20 MRFG35003M6 @ 2.5 GHz
VDS = 6 Vdc, IDQ = 200 mA
−30 f = 2.5 GHz, 8.5 P/A 3GPP W−CDMA
ΓS = 0.889é−155.97_
ΓL = 0.907é−165.42_
−40
−20
−30
ACPR
−40
−50
10
0.1
0
−50
−60
1
ACPR (dBc)
50
PAE, POWER ADDED EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
16
−60
0.1
Pout, OUTPUT POWER (WATTS)
1
Pout, OUTPUT POWER (WATTS)
Figure 3. Transducer Gain and Power Added Efficiency
versus Output Power
Figure 4. W - CDMA ACPR and Input Return Loss
versus Output Power
NOTE: Data in Figures 3 and 4 is generated from load pull, not from the test circuit shown.
G T , TRANSDUCER GAIN (dB)
14
40
GT
12
10
30
MRFG35005M6 @ 2.45 GHz
VDS = 6 Vdc, IDQ = 200 mA
8.5 P/A 3GPP W−CDMA
20
8
6
0.01
10
0
0.1
1
−10
−10
IRL
−20
−20
ACPR
−30
−40
MRFG35003M6 @ 2.45 GHz
VDS = 6 Vdc, IDQ = 200 mA
f = 2.45 GHz, 8.5 P/A 3GPP W−CDMA
−30
−40
−50
ACPR (dBc)
50
PAE
PAE, POWER ADDED EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
16
−50
−60
0.01
−60
0.1
1
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 5. Transducer Gain and Power Added Efficiency
versus Output Power
Figure 6. W - CDMA ACPR and Input Return Loss
versus Output Power
NOTE: Data in Figures 5 and 6 is generated from the test circuit shown.
MRFG35003N6T1 MRFG35003M6T1 BWA
4
RF Reference Design Data
Freescale Semiconductor
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Available at http://www.freescale.com/rf, Go to Tools
Rev.Reference
1, 6/2005
RF
Design Data
Freescale Semiconductor
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MRFG35003N6T1 MRFG35003M6T1 BWA
5
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