Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35003N6T1 MRFG35003M6T1 BWA RF Power Field Effect Transistor Device Characteristics (From Device Data Sheet) Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized from 0.5 to 5.0 GHz. Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications. • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 6 Volts, IDQ = 180 mA Output Power — 450 mWatts Power Gain — 9 dB Efficiency — 24% • 3 Watts P1dB @ 3.55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • N Suffix Indicates Lead - Free Terminations • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. Reference Design Characteristics • Typical Single - Channel W - CDMA Performance: - 44 dBc ACPR, 2.45 GHz, 6 Volts, IDQ = 200 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 400 mWatt Power Gain — 13 dB Efficiency — 25% BWA 2.4 - 2.5 GHz VGG VDD BIAS BIAS BLOCK DIAGRAM RF INPUT RF OUTPUT MATCH MATCH MRFG35003N6T1(M6T1) BWA 2.4 - 2.5 GHz REFERENCE DESIGN Designed by: Thang Trieu and Rick Hooper This reference design is designed to demonstrate the typical RF performance characteristics of the MRFG35003N6T1(M6T1) when applied for the 2.4 - 2.5 GHz W - CDMA frequency band. The reference design is tuned for the best tradeoff between good W - CDMA linearity and good power capability and efficiency. REFERENCE DESIGN LIBRARY TERMS AND CONDITIONS Freescale is pleased to make this reference design available for your use in development and testing of your own product or products, without charge. The reference design contains easy - to - copy, fully functional amplifier designs. Where possible, it consists of “no tune” distributed element matching circuits designed to be as small as possible, includes temperature compensated bias circuitry, and is designed to be used as “building blocks” for our customers. Freescale Semiconductor, Inc., 2005. All rights reserved. RF Reference Design Data Freescale Semiconductor HEATSINKING When operating this fixture please provide adequate heatsinking for the device. Excessive heating of the device will prevent repeating of the included measurements. NONLINEAR SIMULATION To aid the design process and help reduce time to market for our customers, Freescale provides device models for several commercially available harmonic balance simulators. Our model Library is available for all major computer platforms supported by these simulators. For details on the RF model library and supported harmonic balance simulators, go to the following url: http://www.freescale.com/rf/models MRFG35003N6T1 MRFG35003M6T1 BWA 1 VGS VDD C12 C11 C10 C9 C8 C18 C6 C7 C19 C20 C4 C5 C21 C22 Z16 C17 C16 C15 C14 Z17 R1 RF INPUT C2 Z1 Z2 C3 Z3 C13 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C31 C23 Z11 Z12 C32 C27 RF OUTPUT C24 Z13 Z14 C1 Z15 C25 C30 Z1, Z5, Z14 Z2 Z3 Z4 Z6 Z7 Z8 Z9 C29 0.044″ 0.044″ 0.067″ 0.316″ 0.020″ 0.208″ 0.020″ 0.586″ C28 x 0.125″ Microstrip x 0.115″ Microstrip x 0.393″ Microstrip x 0.317″ Microstrip x 0.037″ Microstrip x 0.103″ Microstrip x 0.050″ Microstrip x 0.210″ Microstrip Z10 Z11 Z12 Z13 Z15 Z16, Z17 PCB C26 0.619″ x 0.330″ Microstrip 0.235″ x 0.273″ Microstrip 0.396″ x 0.344″ Microstrip 0.067″ x 0.271″ Microstrip 0.044″ x 0.132″ Microstrip 0.015″ x 0.759″ Microstrip Rogers 4350, 0.020″, εr = 3.50 Figure 1. MRFG35003N6T1(M6T1) BWA Reference Design Table 1. MRFG35003N6T1(M6T1) BWA Reference Design Component Designations and Values Part Description Value, P/N or DWG Manufacturer C1, C25 13 pF Chip Capacitors 100A130JP150X ATC C2, C28 1.2 pF Chip Capacitors 08051J1R2BBT AVX C3, C23, C27, C29, C31, C32 0.3 pF Chip Capacitors 08051J0R3BBT AVX C4, C5, C21, C22 5.6 pF Chip Capacitors 08051J5R6BBT AVX C6, C20 10 pF Chip Capacitors 100A100JP150X ATC C7, C19 100 pF Chip Capacitors 100A101JP150X ATC C8, C18 100 pF Chip Capacitors 100B101JP500X ATC C9, C17 1000 pF Chip Capacitors 100B102JP500X ATC C10, C16 39K pF Chip Capacitors 200B393KP500X ATC C11, C15 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet C12, C14 22 µF Tantalum Capacitors T491X226K035AS Kemet C13 1.0 pF Chip Capacitor 08051J1R0BBT AVX C24, C26 0.9 pF Chip Capacitors 08051J0R9GBT AVX C30 1.5 pF Chip Capacitor 08051J1R5BBT AVX R1 100 W, 1/4 W 1% Chip Resistor D55342M07B101JOR Vishay MRFG35003N6T1 MRFG35003M6T1 BWA 2 RF Reference Design Data Freescale Semiconductor C12 C11 C10 C9 C15 C8 C16 C7 C17 C20 C21 C5 C13 C14 C22 C31 R1 C23 C3 C1 C18 C6 C4 C2 C19 C24 C25 C29 C27 C30 C28 C26 C32 MRFG35003M6 Rev 1 2.4 − 2.5 GHz Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRFG35003N6T1(M6T1) BWA Reference Design Component Layout MRFG35003N6T1 MRFG35003M6T1 BWA RF Reference Design Data Freescale Semiconductor 3 CHARACTERISTICS G T , TRANSDUCER GAIN (dB) 15 45 GT 14 13 12 11 40 MRFG35003M6 @ 2.5 GHz VDS = 6 Vdc, IDQ = 200 mA f = 2.5 GHz, 8.5 P/A 3GPP W−CDMA ΓS = 0.889é−155.97_ ΓL = 0.907é−165.42_ PAE 35 30 25 10 20 9 15 8 0 −10 −10 IRL −20 MRFG35003M6 @ 2.5 GHz VDS = 6 Vdc, IDQ = 200 mA −30 f = 2.5 GHz, 8.5 P/A 3GPP W−CDMA ΓS = 0.889é−155.97_ ΓL = 0.907é−165.42_ −40 −20 −30 ACPR −40 −50 10 0.1 0 −50 −60 1 ACPR (dBc) 50 PAE, POWER ADDED EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) 16 −60 0.1 Pout, OUTPUT POWER (WATTS) 1 Pout, OUTPUT POWER (WATTS) Figure 3. Transducer Gain and Power Added Efficiency versus Output Power Figure 4. W - CDMA ACPR and Input Return Loss versus Output Power NOTE: Data in Figures 3 and 4 is generated from load pull, not from the test circuit shown. G T , TRANSDUCER GAIN (dB) 14 40 GT 12 10 30 MRFG35005M6 @ 2.45 GHz VDS = 6 Vdc, IDQ = 200 mA 8.5 P/A 3GPP W−CDMA 20 8 6 0.01 10 0 0.1 1 −10 −10 IRL −20 −20 ACPR −30 −40 MRFG35003M6 @ 2.45 GHz VDS = 6 Vdc, IDQ = 200 mA f = 2.45 GHz, 8.5 P/A 3GPP W−CDMA −30 −40 −50 ACPR (dBc) 50 PAE PAE, POWER ADDED EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) 16 −50 −60 0.01 −60 0.1 1 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 5. Transducer Gain and Power Added Efficiency versus Output Power Figure 6. W - CDMA ACPR and Input Return Loss versus Output Power NOTE: Data in Figures 5 and 6 is generated from the test circuit shown. MRFG35003N6T1 MRFG35003M6T1 BWA 4 RF Reference Design Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. MRFG35003N6T1 MRFG35003M6T1 BWA 5