Circuit Information -- MRFG35005ANT1 2.4-2.5 GHz, 500 mWatt, 12 V Wideband C ...

Freescale Semiconductor
Technical Data
Available at http://www.freescale.com/rf, Go to Tools
Rev. 1, 6/2005
RF Reference Design Library
Gallium Arsenide PHEMT
MRFG35005NT1
MRFG35005MT1
BWA
RF Power Field Effect Transistor
Device Characteristics (From Device Data Sheet)
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB
linear base station applications.
• Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts,
IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A
@ 0.01% Probability)
Output Power — 450 mWatt
Power Gain — 11 dB
Efficiency — 25%
• 4.5 Watts P1dB @ 3.55 GHz
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• N Suffix Indicates Lead - Free Terminations
Reference Design Characteristics
• Typical Single - Channel W - CDMA Performance: - 44 dBc ACPR,
2.45 GHz, 12 Volts, IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH
(8.5 dB P/A @ 0.01% Probability)
Output Power — 500 mWatt
Power Gain — 12 dB
Efficiency — 28%
VGG
VDD
BIAS
BIAS
BWA
2.4 - 2.5 GHz
RF
INPUT
RF
OUTPUT
MATCH
MATCH
MRFG35005NT1(MT1) BWA 2.4 - 2.5 GHz REFERENCE DESIGN
Designed by: Monte Miller and Rick Hooper
This reference design is designed to demonstrate the typical RF performance characteristics of the
MRFG35005NT1(MT1) when applied for the 2.4 - 2.5 GHz
W - CDMA frequency band. The reference design is tuned for
the best tradeoff between good W - CDMA linearity and good
power capability and efficiency.
REFERENCE DESIGN LIBRARY TERMS
AND CONDITIONS
Freescale is pleased to make this reference design
available for your use in development and testing of your
own product or products, without charge. The reference
design contains easy - to - copy, fully functional amplifier
designs. Where possible, it consists of “no tune” distributed element matching circuits designed to be as small as
possible, includes temperature compensated bias circuitry, and is designed to be used as “building blocks” for our
customers.
 Freescale Semiconductor, Inc., 2005. All rights reserved.
RF Reference Design Data
Freescale Semiconductor
HEATSINKING
When operating this fixture please provide adequate heatsinking for the device. Excessive heating of the device will
prevent repeating of the included measurements.
NONLINEAR SIMULATION
To aid the design process and help reduce time to market
for our customers, Freescale provides device models for
several commercially available harmonic balance simulators.
Our model Library is available for all major computer platforms
supported by these simulators. For details on the RF model
library and supported harmonic balance simulators, go to the
following url:
http://www.freescale.com/rf/models
MRFG35005NT1 MRFG35005MT1 BWA
1
VGS
VDD
C9
C8
C7
C6
C5
C14
C4
C15
C3
C16
C13
C12
C11
C10
R1
Z7
L1
RF
INPUT
Z1
Z2
Z3
L2
Z4
Z5
Z6
Z8
Z9
RF
OUTPUT
Z10
Z11
C1
Z12
Z13
C18
C2
Z1, Z13
Z2
Z3
Z4
Z5
Z6, Z8
0.044″
0.044″
0.105″
0.044″
0.390″
0.146″
x 0.295″
x 0.730″
x 0.040″
x 0.010″
x 0.330″
x 0.070″
C17
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Z7
Z9
Z10
Z11
Z12
PCB
0.045″ x 0.100″ Microstrip
0.200″ x 0.040″ Microstrip
0.260″ x 0.020″ Microstrip
0.200″ x 0.543″ Microstrip
0.044″ x 0.507″ Microstrip
Rogers 4350, 0.020″, εr = 3.50
Figure 1. MRFG35005NT1(MT1) BWA Reference Design
Schematic
Table 1. MRFG35005NT1(MT1) BWA Reference Design Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
C1
3.9 pF Chip Capacitor
08051J3R9BBT
AVX
C2
1.0 pF Chip Capacitor
08051J1R0BBT
AVX
C3, C16
10 pF Chip Capacitors
100A100JP150X
ATC
C4, C15
100 pF Chip Capacitors
100A101JP150X
ATC
C5, C14
100 pF Chip Capacitors
100B101JP500X
ATC
C6, C13
1000 pF Chip Capacitors
100B102JP500X
ATC
C7, C12
0.1 µF Chip Capacitors
CDR33BX104AKWS
Kemet
C8, C11
39K pF Chip Capacitors
200B393KP500X
ATC
C9, C10
22 µF Tantalum Capacitors
T491X226K035AS
Kemet
C17
1.0 pF Chip Capacitor
08051J1R0BBT
AVX
C18
15.0 pF Chip Capacitor
08051J15R0GBT
AVX
L1
4.7 nH Chip Inductor
LL2102- F4N7K
TOKO
L2
8.2 nH Chip Inductor
LL1608- FHN2K
TOKO
R1
75 W, 1/4 W 1% Chip Resistor
D55342M07B75JOR
Vishay
MRFG35005NT1 MRFG35005MT1 BWA
2
RF Reference Design Data
Freescale Semiconductor
C8
C9
C7
C12
C6
C13
C5
C14
C4
C15
C3
C16
R1
C11
C10
L2
L1
C1
C18
C2
C17
MRFG35005M
Rev 1
2.4 − 2.5 GHz
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRFG35005NT1(MT1) BWA Reference Design Component Layout
MRFG35005NT1 MRFG35005MT1 BWA
RF Reference Design Data
Freescale Semiconductor
3
CHARACTERISTICS
GT
G T , TRANSDUCER GAIN (dB)
15
14
MRFG35005M @ 2.5 GHz
VDS = 12 Vdc, IDQ = 80 mA
f = 2.5 GHz, 8.5 P/A 3GPP W−CDMA
ΓS = 0.858é−146.62_
ΓL = 0.680é−176.46_
13
12
45
40
PAE
35
30
11
25
10
20
9
15
8
−10
IRL
−20
−30
−40
MRFG35005M @ 2.5 GHz
VDS = 12 Vdc, IDQ = 80 mA
f = 2.5 GHz, 8.5 P/A 3GPP W−CDMA
ΓS = 0.858é−146.62_
ΓL = 0.680é−176.46_
−20
−30
ACPR
−40
−50
10
0.1
−10
−50
−60
1
ACPR (dBc)
50
PAE, POWER ADDED EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
16
−60
0.1
1
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 3. Transducer Gain and Power Added Efficiency
versus Output Power
Figure 4. W - CDMA ACPR and Input Return Loss
versus Output Power
NOTE: Data in Figures 3 and 4 is generated from load pull, not from the test circuit shown.
GT
PAE
12
40
30
10
20
8
10
6
0.01
−10
0
0.1
1
−10
−20
−30
IRL
MRFG35005M @ 2.45 GHz
VDS = 12 Vdc, IDQ = 80 mA
f = 2.45 GHz, 8.5 P/A 3GPP W−CDMA
ACPR
−20
−30
−40
−40
−50
−50
−60
0.01
ACPR (dBc)
14
50
MRFG35005M @ 2.45 GHz
VDS = 12 Vdc, IDQ = 80 mA
8.5 P/A 3GPP W−CDMA
PAE, POWER ADDED EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
G T , TRANSDUCER GAIN (dB)
16
−60
1
0.1
Pout, OUTPUT POWER (WATTS)
Pout, OUTPUT POWER (WATTS)
Figure 5. Transducer Gain and Power Added Efficiency
versus Output Power
Figure 6. W - CDMA ACPR and Input Return Loss
versus Output Power
NOTE: Data in Figures 5 and 6 is generated from the test circuit shown.
MRFG35005NT1 MRFG35005MT1 BWA
4
RF Reference Design Data
Freescale Semiconductor
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Available at http://www.freescale.com/rf, Go to Tools
Rev.Reference
1, 6/2005
RF
Design Data
Freescale Semiconductor
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MRFG35005NT1 MRFG35005MT1 BWA
5
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