NTR5198NL D

NTR5198NL
Power MOSFET
60 V, 155 mW, Single N−Channel Logic
Level, SOT−23
Features
• Small Footprint Industry Standard Surface Mount SOT−23 Package
• Low RDS(on) for Low Conduction Losses and Improved Efficiency
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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V(BR)DSS
RDS(on) TYP
Compliant
155 mW @ 10 V
60 V
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
N−Channel
Gate−to−Source Voltage
VGS
±20
V
D
ID
2.2
A
Continuous Drain
Current RYJ−mb
(Notes 1, 2, 3, and 4)
Steady
State
TA = 100°C
Power Dissipation
RYJ−mb
(Notes 1 and 3)
Continuous Drain
Current RqJA
(Note 1, 2, 3, and 4)
TA = 25°C
TA = 25°C
1.6
PD
TA = 100°C
Steady
State
Power Dissipation RqJA
(Notes 1 and 3)
Pulsed Drain Current
TA = 25°C
ID
W
A
1.7
PD
0.9
S
W
3
0.4
IDM
27
A
TJ,
Tstg
−55 to
150
°C
Source Current (Body Diode)
IS
1.9
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
G
1.2
TA = 100°C
TA = 25°C,
tp = 10 ms
1.5
0.6
TA = 100°C
TA = 25°C
2.2 A
205 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
ID MAX
MARKING DIAGRAM/
PIN ASSIGNMENT
Drain
3
1
2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
SOT−23
CASE 318
STYLE 21
AA6
M
G
AA6 M G
G
1
Gate
2
Source
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
NTR5198NLT1G
SOT−23
(Pb−Free)
3000 /
Tape & Reel
NTR5198NLT3G
SOT−23
(Pb−Free)
10000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 1
1
Publication Order Number:
NTR5198NL/D
NTR5198NL
THERMAL RESISTANCE RATINGS
Symbol
Max
Unit
Junction−to−Lead #3 − Drain (Notes 2 and 3)
Parameter
RYJ−mb
86
°C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
139
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Reference to 25°C, ID = 250 mA
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
IGSS
VGS = 0 V,
VDS = 60 V
V
70
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
VDS = 0 V, VGS = "20 V
"100
mA
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On−Resistance
VGS(TH)
VGS = VDS, ID = 250 mA
VGS(TH)/TJ
Reference to 25°C, ID = 250 mA
−6.5
RDS(on)
VGS = 10 V, ID = 1 A
107
155
VGS = 4.5 V, ID = 1 A
142
205
VDS = 5.0 V, ID = 1 A
3
S
182
pF
Forward Transconductance
gFS
1.5
2.5
V
mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
25
16
VDS = 48 V,
ID = 1 A
VGS = 4.5 V
2.8
VGS = 10 V
5.1
nC
Threshold Gate Charge
QG(TH)
0.3
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
3.1
V
Gate Resistance
RG
8
W
td(on)
5
ns
VDS = 48 V, ID = 1 A
VGS = 10 V
0.8
1.5
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VDS = 30 V, VGS = 10 V,
ID = 1 A, RG = 10 W
tf
7
13
2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
tb
Reverse Recovery Stored Charge
VGS = 0 V,
IS = 1 A
TJ = 25°C
0.8
TJ = 125°C
0.6
12
IS = 1 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms
QRR
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2
V
ns
9
3
6
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NTR5198NL
VGS = 10 V
VGS = 5.0 V
VGS = 4.5 V
VGS = 3.0 V
VGS = 3.6 V
VGS = 3.4 V
VGS = 3.2 V
1
2
3
4
5
TJ = 25°C
TJ = 150°C
TJ = −55°C
2
1
3
5
4
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.45
ID = 1 A
TJ = 25°C
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
5
4
6
7
8
9
10
VGS, GATE VOLTAGE (V)
0.50
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
VGS = 4.5 V
0.40
0.35
0.30
0.25
VGS = 10 V
0.20
0.15
0.10
0.05
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
ID = 1 A
VGS = 10 V
−25
TJ = 25°C
0.45
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
VDS = 5 V
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.50
3
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
VGS = 4.0 V
VGS = 3.8 V
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Normalized)
VGS = 6.0 V
ID, DRAIN CURRENT (A)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
150
BVDSS, NORMALIZED BREAKDOWN VOLTAGE
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
1.150
1.125
ID = 250 mA
1.100
1.075
1.050
1.025
1.000
0.975
0.950
0.925
0.900
−50
Figure 5. On−Resistance Variation with
Temperature
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Breakdown Voltage Variation with
Temperature
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3
150
NTR5198NL
1.20
1.15
10,000
ID = 250 mA
TJ = 150°C
1.10
1.05
IDSS, LEAKAGE (nA)
1.00
0.95
0.90
0.85
0.80
0.75
0.65
0.60
−50
100
TJ = 85°C
10
1
0
−25
25
50
75
100
125
150
10 15
20
25
30
35 40
45
50 55 60
Figure 7. Threshold Voltage Variation with
Temperature
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V)
12
11
10
9
TJ = 25°C
f = 1 MHz
VGS = 0 V
CISS
175
150
125
100
75
COSS
50
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
225
200
0
TJ, JUNCTION TEMPERATURE (°C)
250
25
CRSS
0
0 5 10 15
20
25
30 35
40
45 50
55
60
55
50
45
QT
8
7
VDS
40
35
VGS
30
6
5
4
3
2
QGS
1
0
60
0
QGD
VDS = 48 V
ID = 1 A
TJ = 25°C
25
20
15
10
5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 9. Capacitance Variation
Figure 10. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10
10
VDD = 30 V
ID = 1 A
VGS = 10 V
IS, SOURCE CURRENT (A)
td(off)
t, TIME (ns)
TJ = 125°C
0.70
275
C, CAPACITANCE (pF)
1000
tr
td(on)
tf
1
TJ = 150°C
TJ = 125°C
TJ = 100°C
TJ = 85°C
1
TJ = 25°C
TJ = −55°C
0.1
0.1
1
10
0.4
100
0.5
0.6
0.7
0.8
0.9
1.0
1.1
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
Figure 12. Diode Forward Voltage vs. Current
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4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS(th), NORMALIZED THRESHOLD VOLTAGE
TYPICAL CHARACTERISTICS
NTR5198NL
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
100
10
VGS ≤ 10 V
Single Pulse
TC = 25°C
100 mS
1
1 mS
10 mS
0.1
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.1
R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W)
10 mS
dc
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
1000
100 50% Duty Cycle
20%
10%
RqJA Steady State = 139°C/W
10 5%
2%
1%
1
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
t, TIME (sec)
Figure 14. Thermal Impedance (Junction−to−Ambient)
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5
10
100
1000
NTR5198NL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
b
0.25
e
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTR5198NL/D