Ordering number : ENA1010A ECH8651R N-Channel Power MOSFET http://onsemi.com 24V, 10A, 14mΩ, Dual ECH8 Features • • • • Low ON-resistance 2.5V drive Common-drain type Protection diode in • • • Built-in gate protection resistor Best suited for LiB charging and discharging switch Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Unit VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation 24 V ±12 V 10 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.4 W Total Dissipation PD PT 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7011A-003 • Package : ECH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ECH8651R-TL-H Top View 0.25 2.9 Packing Type : TL Marking 0.15 8 5 WV 2.3 Lot No. TL 4 1 0.65 Electrical Connection 0.3 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain 0.07 0.9 0.25 2.8 0 to 0.02 Bottom View 8 7 6 5 1 2 3 4 ECH8 Semiconductor Components Industries, LLC, 2013 July, 2013 50912 TKIM/40908PE TIIM TC-00001313 No. A1010-1/7 ECH8651R Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V 24 V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.5 VDS=10V, ID=5A 5.5 9.5 RDS(on)1 ID=5A, VGS=4.5V 7 10.5 14 mΩ RDS(on)2 ID=5A, VGS=4.0V 7.2 11 15 mΩ RDS(on)3 ID=5A, VGS=3.1V 7.5 12.5 17.5 mΩ RDS(on)4 ID=2.5A, VGS=2.5V 9 15 21 mΩ 1 μA ±10 μA 1.3 V S Turn-ON Delay Time td(on) 300 ns Rise Time 1000 ns Turn-OFF Delay Time tr td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=10V, VGS=10V, ID=10A 4000 ns 2500 ns 24 nC 2 nC 4.5 IS=10A, VGS=0V 0.77 nC 1.2 V Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=5A RL=2Ω VIN D PW=10μs D.C.≤1% Rg G P.G VOUT 50Ω S ECH8651R Rg=1kΩ Ordering Information Device ECH8651R-TL-H Package Shipping memo ECH8 3,000pcs./reel Pb Free and Halogen Free No. A1010-2/7 ECH8651R ID -- VDS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 4V 1.5V 7 4.5V Drain Current, ID -- A 8 2.5 3.1V 9 6 5 4 3 2 1 VGS=1V 0 0 0.1 0.2 0.3 0.4 V GS= 5 0 --50 0 50 100 150 6 8 VDS=10V 7 C 5° 5 = Ta --2 75 25 3 °C °C 2 2 3 5 7 2 1.0 3 5°C 25° C --25 °C 0.1 7 5 3 2 0.01 7 5 3 2 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VDD=10V VGS=4V tf 2 tr 1000 7 5 td(on) 3 2 2 Drain Current, ID -- A 2.5 2.0 1.5 1.0 0.5 0 20 Total Gate Charge, Qg -- nC 25 30 IT13296 3 5 7 2 1.0 3 5 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 7 10 IT13295 ASO 2 3.0 15 3 Drain Current, ID -- A 3.5 10 5 td (off) IT13152 VDS=10V ID=10A 7 10 IT13151 SW Time -- ID 100 0.1 0.9 VGS -- Qg 4.5 5 Drain Current, ID -- A Switching Time, SW Time -- ns 1.0 7 5 3 2 10 IT13149 | yfs | -- ID 7 Ta= 7 Source Current, IS -- A 4 1000 Diode Forward Voltage, VSD -- V Gate-to-Source Voltage, VGS -- V 2 IT13150 VGS=0V 5 5 1.0 0.1 IS -- VSD 0 10 Gate-to-Source Voltage, VGS -- V 200 Ambient Temperature, Ta -- °C 4.0 5.0A 15 0 Forward Transfer Admittance, | yfs | -- S Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 10 ID=2.5A 20 10 A =2.5 , ID V 5 . =2 =5A , ID VGS V 1 . =3 5A VGS , I D= 4.5V = VGS 5A = I 4.0V, D 15 25 IT13148 25 20 30 0 RDS(on) -- Ta 30 0.001 0.1 Ta=25°C 35 0.5 Drain-to-Source Voltage, VDS -- V 10 7 5 3 2 RDS(on) -- VGS 40 V 10 IDP=60A ID=10A 10 DC Operation in this area is limited by RDS(on). PW≤10μs 10 0μ 1m s s 10 ms 0m s op era 0.1 7 Ta=25°C 5 Single pulse 3 When mounted on ceramic substrate 2 (900mm2✕0.8mm) 1unit 0.01 2 3 5 7 1.0 2 3 0.01 2 3 5 7 0.1 tio n 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT13390 No. A1010-3/7 ECH8651R PD -- Ta Allowable Power Dissipation, PD -- W 1.8 When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.5 1.4 1.2 To t al 1.0 ss 1u 0.8 Di ni t ip ati on 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13154 No. A1010-4/7 ECH8651R Embossed Taping Specification ECH8651R-TL-H No. A1010-5/7 ECH8651R Outline Drawing ECH8651R-TL-H Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.8 0.6 0.4 0.65 No. A1010-6/7 ECH8651R Note on usage : Since the ECH8651R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1010-7/7