ECH8651R D

Ordering number : ENA1010A
ECH8651R
N-Channel Power MOSFET
http://onsemi.com
24V, 10A, 14mΩ, Dual ECH8
Features
•
•
•
•
Low ON-resistance
2.5V drive
Common-drain type
Protection diode in
•
•
•
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
24
V
±12
V
10
A
PW≤10μs, duty cycle≤1%
60
A
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
1.4
W
Total Dissipation
PD
PT
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
When mounted on ceramic substrate (900mm2×0.8mm)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-003
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ECH8651R-TL-H
Top View
0.25
2.9
Packing Type : TL
Marking
0.15
8
5
WV
2.3
Lot No.
TL
4
1
0.65
Electrical Connection
0.3
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
0.07
0.9
0.25
2.8
0 to 0.02
Bottom View
8
7
6
5
1
2
3
4
ECH8
Semiconductor Components Industries, LLC, 2013
July, 2013
50912 TKIM/40908PE TIIM TC-00001313 No. A1010-1/7
ECH8651R
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Conditions
Ratings
min
typ
Unit
max
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=20V, VGS=0V
24
V
IGSS
VGS(off)
| yfs |
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
0.5
VDS=10V, ID=5A
5.5
9.5
RDS(on)1
ID=5A, VGS=4.5V
7
10.5
14
mΩ
RDS(on)2
ID=5A, VGS=4.0V
7.2
11
15
mΩ
RDS(on)3
ID=5A, VGS=3.1V
7.5
12.5
17.5
mΩ
RDS(on)4
ID=2.5A, VGS=2.5V
9
15
21
mΩ
1
μA
±10
μA
1.3
V
S
Turn-ON Delay Time
td(on)
300
ns
Rise Time
1000
ns
Turn-OFF Delay Time
tr
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
See specified Test Circuit.
VDS=10V, VGS=10V, ID=10A
4000
ns
2500
ns
24
nC
2
nC
4.5
IS=10A, VGS=0V
0.77
nC
1.2
V
Switching Time Test Circuit
4.5V
0V
VDD=10V
VIN
ID=5A
RL=2Ω
VIN
D
PW=10μs
D.C.≤1%
Rg
G
P.G
VOUT
50Ω
S
ECH8651R
Rg=1kΩ
Ordering Information
Device
ECH8651R-TL-H
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
No. A1010-2/7
ECH8651R
ID -- VDS
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
4V
1.5V
7
4.5V
Drain Current, ID -- A
8
2.5
3.1V
9
6
5
4
3
2
1
VGS=1V
0
0
0.1
0.2
0.3
0.4
V GS=
5
0
--50
0
50
100
150
6
8
VDS=10V
7
C
5°
5
=
Ta
--2
75
25
3
°C
°C
2
2
3
5
7
2
1.0
3
5°C
25°
C
--25
°C
0.1
7
5
3
2
0.01
7
5
3
2
0.2
0.3
0.4
0.5
0.6
0.7
0.8
VDD=10V
VGS=4V
tf
2
tr
1000
7
5
td(on)
3
2
2
Drain Current, ID -- A
2.5
2.0
1.5
1.0
0.5
0
20
Total Gate Charge, Qg -- nC
25
30
IT13296
3
5
7
2
1.0
3
5
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
7
10
IT13295
ASO
2
3.0
15
3
Drain Current, ID -- A
3.5
10
5
td (off)
IT13152
VDS=10V
ID=10A
7
10
IT13151
SW Time -- ID
100
0.1
0.9
VGS -- Qg
4.5
5
Drain Current, ID -- A
Switching Time, SW Time -- ns
1.0
7
5
3
2
10
IT13149
| yfs | -- ID
7
Ta=
7
Source Current, IS -- A
4
1000
Diode Forward Voltage, VSD -- V
Gate-to-Source Voltage, VGS -- V
2
IT13150
VGS=0V
5
5
1.0
0.1
IS -- VSD
0
10
Gate-to-Source Voltage, VGS -- V
200
Ambient Temperature, Ta -- °C
4.0
5.0A
15
0
Forward Transfer Admittance, | yfs | -- S
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
10
ID=2.5A
20
10
A
=2.5
, ID
V
5
.
=2
=5A
, ID
VGS
V
1
.
=3
5A
VGS
, I D=
4.5V
=
VGS
5A
=
I
4.0V, D
15
25
IT13148
25
20
30
0
RDS(on) -- Ta
30
0.001
0.1
Ta=25°C
35
0.5
Drain-to-Source Voltage, VDS -- V
10
7
5
3
2
RDS(on) -- VGS
40
V
10
IDP=60A
ID=10A
10
DC
Operation in this
area is limited by RDS(on).
PW≤10μs
10
0μ
1m s
s
10
ms
0m
s
op
era
0.1
7 Ta=25°C
5 Single pulse
3
When mounted on ceramic substrate
2
(900mm2✕0.8mm) 1unit
0.01
2 3 5 7 1.0
2 3
0.01 2 3 5 7 0.1
tio
n
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
5
IT13390
No. A1010-3/7
ECH8651R
PD -- Ta
Allowable Power Dissipation, PD -- W
1.8
When mounted on ceramic substrate
(900mm2✕0.8mm)
1.6
1.5
1.4
1.2
To
t
al
1.0
ss
1u
0.8
Di
ni
t
ip
ati
on
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13154
No. A1010-4/7
ECH8651R
Embossed Taping Specification
ECH8651R-TL-H
No. A1010-5/7
ECH8651R
Outline Drawing
ECH8651R-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1010-6/7
ECH8651R
Note on usage : Since the ECH8651R is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PS No. A1010-7/7
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