ENA1655 D

Ordering number : ENA1655D
SMP3003
P-Channel Power MOSFET
http://onsemi.com
–75V, –100A, 8.0mΩ, TO-263-2L/TO-263
Features
•
•
ON-resistance RDS(on)1=6.2mΩ (typ.)
Input capacitance Ciss=13400pF (typ.)
•
TO-263
4V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
VDSS
VGSS
Unit
--75
V
±20
V
--100
A
Allowable Power Dissipation
ID
IDP
PD
Channel Temperature
Tch
150
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
468
mJ
--60
A
Drain Current (Pulse)
Avalanche Current *2
PW≤10μs, duty cycle≤1%
Tc=25°C
--400
A
90
W
°C
Note : *1 VDD=--48V, L=100μH, IAV=--60A (Fig.1)
*2 L≤100μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Drain to Source Breakdown Voltage
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VDS=--75V, VGS=0V
VGS=±16V, VDS=0V
VGS(off)
| yfs |
VDS=--10V, ID=--1mA
VDS=--10V, ID=--50A
Static Drain to Source On-State Resistance
RDS(on)1
RDS(on)2
ID=--50A, VGS=--10V
ID=--50A, VGS=--4V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
ID=--1mA, VGS=0V
Ratings
min
typ
max
--75
Unit
V
--1.2
--10
μA
±10
μA
--2.6
140
V
S
6.2
8.0
mΩ
8.0
11
mΩ
13400
pF
1000
pF
Crss
740
pF
95
ns
Rise Time
td(on)
tr
1000
ns
Turn-OFF Delay Time
td(off)
800
ns
Fall Time
tf
820
ns
Total Gate Charge
Qg
280
nC
Gate to Source Charge
Qgs
50
nC
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=--100A, VGS=0V
--1.0
Reverse Recovery Time
trr
Qrr
See Fig.3
120
ns
IS=--100A, VGS=0V, di/dt=--100A/μs
380
nC
Reverse Recovery Charge
VDS=--20V, f=1MHz
See Fig.2
VDS=--48V, VGS=--10V, ID=--100A
55
nC
--1.5
V
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
Semiconductor Components Industries, LLC, 2013
September, 2013
91113 TKIM TC-00002966/O2412 TKIM/53012 TKIM TC-00002772/ No. A1655-1/6
O1211 TKIM TC-00002654/21710QA TKIM TC-00002253
SMP3003
--120
--100
--80
--60
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
--60
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
ID= --50A
Single pulse
16
14
12
10
Tc=75°C
8
25°C
6
--25°C
4
2
0
0
--1
--2
--3
--4
--5
--6
--7
--8
Gate to Source Voltage, VGS -- V
--9
2
°C
--25
Tc=
C
75°
1.0
7
5
3
2
0.1
--0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Drain Current, ID -- A
3
75°C
25°C
°C
--25
--3.0
--3.5
--4.0
--4.5
--5.0
IT16500
Single pulse
16
14
12
50A
= -I
D
,
0A
4V
= -= --5
VGS -10V, I D
=VGS
10
8
6
4
2
0
--25
25
50
75
100
125
Case Temperature, Tc -- °C
150
IT16502
IS -- VSD
--1000
7
5
3
2
VGS=0V
Single pulse
--100
7
5
3
2
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Diode Forward Voltage, VSD -- V
--1.4
IT17198
Ciss, Coss, Crss -- VDS
100000
7
5
f=1MHz
3
2
Ciss, Coss, Crss -- pF
td (off)
7
tf
5
3
2
tr
100
3
5 7 --1.0
2
3
Ciss
3
2
Coss
1000
7
5
Crss
3
2
td(on)
7
2
2
10000
7
5
1000
5
--0.1
--2.5
18
0
--50
5 7 --100
VDD= --48V
VGS= --10V
--2.0
RDS(on) -- Tc
IT16503
SW Time -- ID
5
--1.5
20
Source Current, IS -- A
5°C
10
7
5
3
2
--1.0
Gate to Source Voltage, VGS -- V
--10
VDS= --10V
100
7
5
3
2
--0.5
IT16501
| yfs | -- ID
1000
7
5
3
2
0
IT16499
RDS(on) -- VGS
18
0
--2.0
Tc=7
5°C
25°C
--0.2
Static Drain to Source
On-State Resistance, RDS(on) -- mΩ
0
20
Forward Transfer Admittance, | yfs | -- S
--80
--20
Drain to Source Voltage, VDS -- V
Switching Time, SW Time -- ns
--100
--40
VGS= --3V
--20
0
--120
25°
C
--40
--140
--25°C
--140
Tc=
75°
C
--1
--160
Drain Current, ID -- A
Drain Current, ID -- A
--160
VDS= --10V
--180
--4V
0V
--180
ID -- VGS
--200
--6
V
--8
V
Tc=25°C
Tc= --2
5°C
ID -- VDS
--200
5 7 --10
Drain Current, ID -- A
2
3
5 7 --100
IT14179
100
0
--5
--10
--15
--20
--25
Drain to Source Voltage, VDS -- V
--30
IT16505
No. A1655-2/6
SMP3003
VGS -- Qg
--10
--9
--8
Drain Current, ID -- A
Gate to Source Voltage, VGS -- V
--1000
7
5
3
2
VDS= --48V
ID= --100A
--7
--6
--5
--4
--3
--2
--1
0
0
50
100
150
200
250
Total Gate Charge, Qg -- nC
PD -- Tc
350
70
60
50
40
30
20
10
20
40
60
80
100
ID= --100A
--10
7
5
3
2
120
Case Temperature, Tc -- °C
140
160
IT15361
0μ
s
1m
10 s
m
DC 100m s
op s
era
tio
n
10
μs
Operation in
this area is
limited by RDS(on).
--1.0
7
5
3
2
Tc=25°C
2
3
5 7 --10
2
3
5 7--100 2
IT15360
Drain to Source Voltage, VDS -- V
EAS -- Ta
120
80
0
10
IT16506
90
0
IDP= --400A(PW≤10μs)
--0.1 Single pulse
5 7 --1.0
--0.1 2 3
Avalanche Energy derating factor -- %
Allowable Power Dissipation, PD -- W
100
300
--100
7
5
3
2
ASO
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT14184
No. A1655-3/6
SMP3003
Package Dimensions
SMP3003-DL-1E
D2PAK/TO-263-2L
CASE 418AP
ISSUE O
Unit : mm
1: Gate
2: Drain
3: Source
4: Drain
Land Pattern Example
Packing Type: DL
Electrical Connection
2, 4
DL
1
3
No. A1655-4/6
SMP3003
Package Dimensions
SMP3003-TL-1E
Unit : mm
1: Gate
2: Drain
3: Source
4: Drain
Land Pattern Example
Packing Type: TL
Electrical Connection
2, 4
TL
1
3
No. A1655-5/6
SMP3003
Ordering & Package Information
Device
Package
SMP3003-DL-1E
TO-263-2L
SC-83, TO-263
SMP3003-TL-1E
TO-263
Marking
Shipping
memo
MP3003
800
pcs./reel
Pb-Free
LOT No.
Fig.1 Unclamped Inductive Switching Test Circuit
D
L
Fig.2 Switching Time Test Circuit
0V
--10V
≥50Ω
RG
ID= --50A
RL=0.96Ω
VIN
G
SMP3003
0V
--10V
VDD= --48V
VIN
S
50Ω
VDD
D
PW=10μs
D.C.≤1%
VOUT
G
P.G
SMP3003
50Ω
S
Fig.3 Reverse Recovery Time Test Circuit
SMP3003
D
L
G
S
VDD
Driver MOSFET
Note on usage : Since the SMP3003 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1655-6/6
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