ECH8309 D

Ordering number : ENA1418B
ECH8309
P-Channel Power MOSFET
http://onsemi.com
–12V, –9.5A, 16mΩ, Single ECH8
Features
•
•
•
1.8V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
Unit
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
--12
V
±10
V
Allowable Power Dissipation
ID
IDP
PD
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
--9.5
A
--40
A
When mounted on ceramic substrate (900mm2×0.8mm)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7011A-002
• Package
: ECH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
ECH8309-TL-H
Top View
0.25
2.9
Packing Type : TL
Marking
0.15
8
JL
5
Lot No.
2.3
TL
4
1
0.65
Electrical Connection
0.3
8
7
6
5
1
2
3
4
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
0.07
0.9
0.25
2.8
0 to 0.02
Bottom View
ECH8
Semiconductor Components Industries, LLC, 2013
July, 2013
53012 TKIM/22509PE MSIM TC-00001633 No. A1418-1/7
ECH8309
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
IDSS
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Forward Transfer Admittance
IGSS
VGS(off)
| yfs |
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
Cutoff Voltage
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Conditions
Ratings
min
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
VGS=±8V, VDS=0V
--12
VDS=--6V, ID=--1mA
VDS=--6V, ID=--4.5A
--0.4
9.6
ID=--4.5A, VGS=--4.5V
ID=--2A, VGS=--2.5V
ID=--1A, VGS=--1.8V
typ
Unit
max
V
--10
μA
±10
μA
--1.3
16
V
S
12
16
mΩ
18
26
mΩ
30
53
mΩ
1780
pF
540
pF
Crss
390
pF
Turn-ON Delay Time
td(on)
22
ns
Rise Time
tr
110
ns
Turn-OFF Delay Time
td(off)
157
ns
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--6V, f=1MHz
See specified Test Circuit.
VDS=--6V, VGS=--4.5V, ID=--9.5A
123
ns
18
nC
2.8
nC
4.9
IS=--9.5A, VGS=0V
--0.8
nC
--1.2
V
Switching Time Test Circuit
0V
--4.5V
VDD= --6V
VIN
ID= --4.5A
RL=1.3Ω
VIN
D
PW=10μs
D.C.≤1%
VOUT
G
ECH8309
P.G
50Ω
S
Ordering Information
Device
ECH8309-TL-H
Package
Shipping
memo
ECH8
3,000pcs./reel
Pb Free and Halogen Free
No. A1418-2/7
ECH8309
ID -- VGS
--10
--1.8
V
VDS= --6V
--9
--8
--3
--1.5V
--2
--6
--5
--4
--3
--1
VGS= --1.2V
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
0
--1.0
0
--0.5
--1.0
--1.5
--2.5
--2.0
Gate-to-Source Voltage, VGS -- V
IT13985
RDS(on) -- VGS
50
--0.9
25
°C
--2
--1
--25°
C
--4
--7
Ta=7
5°C
Drain Current, ID -- A
--5
--4.5 --2.5
V
V
Drain Current, ID -- A
--6
ID -- VDS
--8.0V --6.0V
--7
IT13986
RDS(on) -- Ta
45
45
ID= --1.0A
--2.0A
35
--4.5A
25
20
15
10
5
0
0
--1
--2
--3
--4
--5
--6
--7
5
3
| yfs | -- ID
C
°C
-25
=a
T
C
75°
3
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
SW Time -- ID
2
3
10
5
--40
--20
0
20
40
60
80
100
120
140
160
IT14419
IS -- VSD
VGS=0V
3
2
--1.0
7
5
3
2
--0.1
7
5
--0.01
5 7 --10
IT13989
3
td(off)
tf
100
7
5
tr
3
--0.4
--0.6
--0.8
--1.0
--1.2
IT13990
f=1MHz
3
Ciss, Coss, Crss -- pF
5
--0.2
Ciss, Coss, Crss -- VDS
5
7
2
0
Diode Forward Voltage, VSD -- V
VDD= --6V
VGS= --4.5V
1000
Switching Time, SW Time -- ns
15
3
2
Drain Current, ID -- A
2
Ciss
1000
7
Coss
Crss
5
3
2
2
10
--0.01
20
--10
7
5
1.0
7
5
0.1
7
--0.01
--2.0A
, I D=
V
5
.
2
= -VGS
.5A
I = --4
--4.5V, D
=
V GS
2
25°
2
25
--1.0A
Ambient Temperature, Ta -- °C
2
3
30
IT14418
VDS= --6V
10
7
5
=
8V, I D
= --1.
VGS
0
--60
--8
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
Gate-to-Source Voltage, VGS -- V
35
5°C
25°C
--25°
C
30
40
Ta=
7
40
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
td(on)
2
3
5 7 --0.1
2
3
5 7 --1.0
2
Drain Current, ID -- A
3
5 7 --10
2
IT13991
100
0
--2
--4
--6
--8
--10
Drain-to-Source Voltage, VDS -- V
--12
IT13992
No. A1418-3/7
ECH8309
VGS -- Qg
--100
7
5
3
2
VDS= --6V
ID= --9.5A
--4.0
--3.5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--4.5
--3.0
--2.5
--2.0
--1.5
--1.0
--0.5
0
0
2
4
8
6
12
10
14
Total Gate Charge, Qg -- nC
PD -- Ta
Allowable Power Dissipation, PD -- W
1.8
16
18
IT14420
--10
7
5
3
2
ASO
IDP= --40A
ID= --9.5A
DC
10
0m
s
op
era
tio
--1.0
7
5
3
2
--0.1
7
5
3
2
PW≤10μs
1m
s
10
ms
Operation in this area
is limited by RDS(on).
n(
Ta
=
25
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
--0.01
--0.01
2 3
5 7 --0.1
2 3
5 7 --1.0
2 3
5 7 --10
Drain-to-Source Voltage, VDS -- V
2
3
IT14421
When mounted on ceramic substrate
(900mm2×0.8mm)
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14422
No. A1418-4/7
ECH8309
Embossed Taping Specification
ECH8309-TL-H
No. A1418-5/7
ECH8309
Outline Drawing
ECH8309-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.8
0.6
0.4
0.65
No. A1418-6/7
ECH8309
Note on usage : Since the ECH8309 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1418-7/7
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