ENA1141 D

Ordering number : ENA1141D
EMH2407
N-Channel Power MOSFET
http://onsemi.com
20V, 6A, 25mΩ, Dual EMH8
Features
•
•
•
•
•
Low ON-resistance
Best suited for LiB charging and discharging switch
Common-drain type
2.5V drive
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
Unit
20
V
±12
V
6
A
PW≤10μs, duty cycle≤1%
40
A
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
1.3
W
Total Dissipation
PD
PT
1.4
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
When mounted on ceramic substrate (900mm2×0.8mm)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7045-006
• Package
: EMH8
• JEITA, JEDEC
:• Minimum Packing Quantity : 3,000 pcs./reel
0.125
0.2
0.2
EMH2407-TL-H
5
Packing Type : TL
Marking
LG
2.1
1.7
8
TL
1
LOT No.
0.2
4
0.5
0.05
0.75
2.0
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Electrical Connection
8
7
6
5
1
2
3
4
EMH8
Semiconductor Components Industries, LLC, 2013
July, 2013
91212 TKIM/51612 TKIM/90308 TIIM/80608 TIIM/31908PE TIIM TC-00001276 No. A1141-1/7
EMH2407
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
typ
Unit
max
ID=1mA, VGS=0V
VDS=20V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
RDS(on)1
ID=3A, VGS=4.5V
13
19
25
mΩ
RDS(on)2
ID=3A, VGS=4V
14
20
26
mΩ
RDS(on)3
ID=1.5A, VGS=2.5V
16
28
39
mΩ
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Turn-OFF Delay Time
Ratings
min
V(BR)DSS
IDSS
Input Capacitance
Rise Time
Conditions
20
V
0.5
VDS=10V, ID=3A
3
1
μA
±10
μA
1.3
5
V
S
580
pF
95
pF
Crss
75
pF
td(on)
tr
310
ns
1020
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=10V, VGS=4.5V, ID=6A
IS=6A, VGS=0V
3000
ns
2250
ns
6.3
nC
0.83
nC
1.9
nC
0.78
1.2
V
Switching Time Test Circuit
4.5V
0V
VDD=10V
VIN
ID=3A
RL=3.33Ω
VIN
D
PW=10μs
D.C.≤1%
G
VOUT
Rg
EMH2407
P.G
50Ω
S
Rg=2kΩ
Ordering Information
Device
EMH2407-TL-H
Package
Shipping
memo
EMH8
3,000pcs./reel
Pb Free and Halogen Free
No. A1141-2/7
EMH2407
ID -- VDS
6
VGS=1.5V
1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Drain-to-Source Voltage, VDS -- V
0
3A
40
30
20
10
0
0
1
2
3
4
5
6
7
Gate-to-Source Voltage, VGS -- V
1.0
Source Current, IS -- A
C
5°
--2
°C
75
°C
25
7
5
3
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5
td(off)
20
10
--40
tf
2
1000
--20
0
20
40
60
80
100
120
140
160
IT13204
IS -- VSD
VGS=0V
3
2
1.0
7
5
3
2
0.1
7
5
0.4
0.6
0.8
1.0
1.2
IT13206
Ciss, Coss, Crss -- VDS
f=1MHz
1000
Ciss, Coss, Crss -- pF
3
tr
7
5
7
Ciss
5
3
2
Coss
100
7
td(on)
Crss
5
3
2
0.1
3.0A
I D=
,
V
0
=4.
3.0A
VGS
, I D=
4.5V
=
VGS
2
VDD=10V
VGS=4.5V
1.8
IT13202
=
V GS
30
Diode Forward Voltage, VSD -- V
SW Time -- ID
7
1.6
5A
0.01
0.2
5 7 10
IT13205
Drain Current, ID -- A
1.4
=1.
, ID
V
5
2.
3
2
2
0.1
0.01
40
10
7
5
VDS=10V
=
Ta
1.2
Ambient Temperature, Ta -- °C
5
2
1.0
50
0
--60
8
3
0.8
RDS(on) -- Ta
IT13203
| yfs | -- ID
10
0.6
60
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
50
0.4
Gate-to-Source Voltage, VGS -- V
Ta=25°C
ID=1.5A
0.2
IT13201
RDS(on) -- VGS
60
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
1.0
Ta=7
5°C
25°C
--25°
C
0
Forward Transfer Admittance, | yfs | -- S
2
1
0
Switching Time, SW Time -- ns
3
--25°C
2
4
25°C
3
5
Ta=7
5°C
Drain Current, ID -- A
1.8V
4
7
VDS=10V
V
2.0
3.5V
Drain Current, ID -- A
5
ID -- VGS
7
2.5V
4.5V 4.0V
6
3
2
3
5
7
1.0
2
Drain Current, ID -- A
3
5
7
10
IT13207
0
2
4
6
8
10
12
14
16
Drain-to-Source Voltage, VDS -- V
18
20
IT13208
No. A1141-3/7
EMH2407
VGS -- Qg
4.5
4.0
3.5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
100
7
5
3
2
VDS=10V
ID=6A
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
Total Gate Charge, Qg -- nC
7
IT13209
PD -- Ta
1.6
Allowable Power Dissipation, PD -- W
6
10
7
5
3
2
ASO
IDP=40A
0
1m μs
s
ID=6A
DC
10
ms
0m
s
10
op
era
tio
1.0
7
5
3
2
0.1
7
5
3
2
PW≤10μs
10
n(
Ta
=
25
°C
)
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
0.01
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
Drain-to-Source Voltage, VDS -- V
2
3
IT13210
When mounted on ceramic substrate (900mm2✕0.8mm)
1.4
1.3
1.2
1.0
To
t
0.8
1u
al
di
ni
t
0.6
ss
ip
ati
on
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13211
No. A1141-4/7
EMH2407
Embossed Taping Specification
EMH2407-TL-H
No. A1141-5/7
EMH2407
Outline Drawing
EMH2407-TL-H
Land Pattern Example
Mass (g) Unit
0.008 mm
* For reference
Unit: mm
1.9
0.4
0.3
0.5
No. A1141-6/7
EMH2407
Note on usage : Since the EMH2407 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PS No. A1141-7/7
Similar pages