Ordering number : ENA1141D EMH2407 N-Channel Power MOSFET http://onsemi.com 20V, 6A, 25mΩ, Dual EMH8 Features • • • • • Low ON-resistance Best suited for LiB charging and discharging switch Common-drain type 2.5V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit 20 V ±12 V 6 A PW≤10μs, duty cycle≤1% 40 A When mounted on ceramic substrate (900mm2×0.8mm) 1unit 1.3 W Total Dissipation PD PT 1.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C When mounted on ceramic substrate (900mm2×0.8mm) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7045-006 • Package : EMH8 • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel 0.125 0.2 0.2 EMH2407-TL-H 5 Packing Type : TL Marking LG 2.1 1.7 8 TL 1 LOT No. 0.2 4 0.5 0.05 0.75 2.0 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain 6 : Drain 7 : Drain 8 : Drain Electrical Connection 8 7 6 5 1 2 3 4 EMH8 Semiconductor Components Industries, LLC, 2013 July, 2013 91212 TKIM/51612 TKIM/90308 TIIM/80608 TIIM/31908PE TIIM TC-00001276 No. A1141-1/7 EMH2407 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance typ Unit max ID=1mA, VGS=0V VDS=20V, VGS=0V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA RDS(on)1 ID=3A, VGS=4.5V 13 19 25 mΩ RDS(on)2 ID=3A, VGS=4V 14 20 26 mΩ RDS(on)3 ID=1.5A, VGS=2.5V 16 28 39 mΩ Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Turn-OFF Delay Time Ratings min V(BR)DSS IDSS Input Capacitance Rise Time Conditions 20 V 0.5 VDS=10V, ID=3A 3 1 μA ±10 μA 1.3 5 V S 580 pF 95 pF Crss 75 pF td(on) tr 310 ns 1020 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=4.5V, ID=6A IS=6A, VGS=0V 3000 ns 2250 ns 6.3 nC 0.83 nC 1.9 nC 0.78 1.2 V Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=3A RL=3.33Ω VIN D PW=10μs D.C.≤1% G VOUT Rg EMH2407 P.G 50Ω S Rg=2kΩ Ordering Information Device EMH2407-TL-H Package Shipping memo EMH8 3,000pcs./reel Pb Free and Halogen Free No. A1141-2/7 EMH2407 ID -- VDS 6 VGS=1.5V 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 3A 40 30 20 10 0 0 1 2 3 4 5 6 7 Gate-to-Source Voltage, VGS -- V 1.0 Source Current, IS -- A C 5° --2 °C 75 °C 25 7 5 3 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 td(off) 20 10 --40 tf 2 1000 --20 0 20 40 60 80 100 120 140 160 IT13204 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 IT13206 Ciss, Coss, Crss -- VDS f=1MHz 1000 Ciss, Coss, Crss -- pF 3 tr 7 5 7 Ciss 5 3 2 Coss 100 7 td(on) Crss 5 3 2 0.1 3.0A I D= , V 0 =4. 3.0A VGS , I D= 4.5V = VGS 2 VDD=10V VGS=4.5V 1.8 IT13202 = V GS 30 Diode Forward Voltage, VSD -- V SW Time -- ID 7 1.6 5A 0.01 0.2 5 7 10 IT13205 Drain Current, ID -- A 1.4 =1. , ID V 5 2. 3 2 2 0.1 0.01 40 10 7 5 VDS=10V = Ta 1.2 Ambient Temperature, Ta -- °C 5 2 1.0 50 0 --60 8 3 0.8 RDS(on) -- Ta IT13203 | yfs | -- ID 10 0.6 60 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 50 0.4 Gate-to-Source Voltage, VGS -- V Ta=25°C ID=1.5A 0.2 IT13201 RDS(on) -- VGS 60 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1.0 Ta=7 5°C 25°C --25° C 0 Forward Transfer Admittance, | yfs | -- S 2 1 0 Switching Time, SW Time -- ns 3 --25°C 2 4 25°C 3 5 Ta=7 5°C Drain Current, ID -- A 1.8V 4 7 VDS=10V V 2.0 3.5V Drain Current, ID -- A 5 ID -- VGS 7 2.5V 4.5V 4.0V 6 3 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT13207 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT13208 No. A1141-3/7 EMH2407 VGS -- Qg 4.5 4.0 3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 100 7 5 3 2 VDS=10V ID=6A 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 Total Gate Charge, Qg -- nC 7 IT13209 PD -- Ta 1.6 Allowable Power Dissipation, PD -- W 6 10 7 5 3 2 ASO IDP=40A 0 1m μs s ID=6A DC 10 ms 0m s 10 op era tio 1.0 7 5 3 2 0.1 7 5 3 2 PW≤10μs 10 n( Ta = 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT13210 When mounted on ceramic substrate (900mm2✕0.8mm) 1.4 1.3 1.2 1.0 To t 0.8 1u al di ni t 0.6 ss ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13211 No. A1141-4/7 EMH2407 Embossed Taping Specification EMH2407-TL-H No. A1141-5/7 EMH2407 Outline Drawing EMH2407-TL-H Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 1.9 0.4 0.3 0.5 No. A1141-6/7 EMH2407 Note on usage : Since the EMH2407 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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