CPH3457 D

Ordering number : ENA1804B
CPH3457
N-Channel Power MOSFET
http://onsemi.com
30V, 3A, 95mΩ, Single CPH3
Features
•
•
•
•
ON-resistance RDS(on)1=73mW(typ.)
1.8V drive
Halogen free compliance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Value
Unit
Drain-to-Source Voltage
VDSS
30
Gate-to-Source Voltage
VGSS
±12
V
Drain Current (DC)
ID
3
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
12
A
Power Dissipation
PD
When mounted on ceramic substrate (900mm2×0.8mm)
1.0
W
150
°C
--55 to +150
°C
Junction Temperature
Tj
Storage Temperature
Tstg
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
Product & Package Information
unit : mm (typ)
7015A-004
• Package
: CPH3
• JEITA, JEDEC
: SC-59, TO-236, SOT-23
• Minimum Packing Quantity : 3,000 pcs./reel
0.6
2.9
CPH3457-TL-H
CPH3457-TL-W
0.15
Packing Type: TL Marking
LOT No.
0.05
1.6
2.8
0.2
LP
3
0.9
0.2
0.6
TL
1
2
0.95
0.4
1 : Gate
2 : Source
3 : Drain
Electrical Connection
3
CPH3
1
2
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
April, 2014
42814HK TC-00003117/90110TKIM PE No. A1804-1/5
CPH3457
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Value
min
typ
Unit
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
30
V
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
Gate Threshold Voltage
VDS=10V, ID=1mA
Forward Transconductance
VGS(th)
gFS
VDS=10V, ID=1.5A
2.7
RDS(on)1
RDS(on)2
ID=1.5A, VGS=4.5V
ID=0.75A, VGS=2.5V
73
95
mW
Static Drain-to-Source On-State Resistance
95
133
mW
203
mW
0.4
1
mA
±10
mA
1.3
V
S
RDS(on)2
ID=0.3A, VGS=1.8V
135
Input Capacitance
Ciss
VDS=10V, f=1MHz
265
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
35
pF
Reverse Transfer Capacitance
Crss
pF
td(on)
tr
VDS=10V, f=1MHz
See specified Test Circuit.
28
Turn-ON Delay Time
5.1
ns
See specified Test Circuit.
10
ns
See specified Test Circuit.
137
ns
Fall Time
td(off)
tf
See specified Test Circuit.
36
ns
Total Gate Charge
Qg
VDS=15V, VGS=4.5V, ID=3A
3.5
nC
Rise Time
Turn-OFF Delay Time
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=15V, VGS=4.5V, ID=3A
VDS=15V, VGS=4.5V, ID=3A
0.57
Gate-to-Drain “Miller” Charge
0.93
nC
Forward Diode Voltage
VSD
IS=3A, VGS=0V
0.87
1.2
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VDD=15V
4.5V
0V
VIN
PW=10ms
D.C.≤1%
ID=1.5A
RL=10Ω
VIN
VOUT
D
G
P.G
50Ω
S
CPH3457
Ordering Information
Device
CPH3457-TL-H
CPH3457-TL-W
Package
Shipping
memo
CPH3
3,000pcs./reel
Pb-Free and Halogen Free
No. A1804-2/5
CPH3457
ID -- VDS
1.
8V
1.6
0.2
0.3
0.4
0.5
0.6
0.7
0.8
1.5A
150
100
50
2
4
6
8
Gate-to-Source Voltage, VGS -- V
gFS -- ID
7
75
°C
7
5
25
°C
3
2
0.1
0.01
2
3
5
7 0.1
2
3
5
7 1.0
Drain Current, ID -- A
2
25
50
--20
0
20
40
Ciss, Coss, Crss -- pF
2
tr
7
5
80
100
120
td(on)
140
160
IT15791
0.1
7
5
3
2
0.01
7
5
3
2
0
0.2
0.4
0.6
0.8
1.0
Ciss, Coss, Crss -- VDS
1.2
HD15273
f=1MHz
5
tf
10
60
VGS=0V
7
7
1.6
HD15269
IS -- VSD
Ciss
3
3
1.4
Forward Diode Voltage, VSD -- V
100
5
1.2
1.0
7
5
3
2
0.001
3
VDD=15V
VGS=4.5V
td(off)
100
HD15272
SW Time -- ID
3
2
1.0
Ambient Temperature, Ta -- °C
Source Current, IS -- A
°C
0.8
A
=0.3
V, I D
8
.
1
=
VGS
A
0.75
I D=
,
V
5
=2.
VGS
1.5A
, I D=
4.5V
=
VGS
150
7
5
3
2
2
-25
=a
T
0.6
200
IT15790
3
1.0
0.4
RDS(on) -- Ta
0
--60 --40
10
VDS=10V
5
0.2
250
0.75A
0
0
Gate-to-Source Voltage, VGS -- V
Ta=25°C
ID=0.3A
200
0
1.0
IT15268
RDS(on) -- VGS
250
0.9
5°C
25°
C
--25
°C
0.1
0.2
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0.6
Ta=
7
0
300
Forward Transconductance, gFS -- S
0.8
°C
VGS=1.2V
Drain-to-Source Voltage, VDS -- V
Switching Time, SW Time -- ns
1.0
0.4
1
0
1.2
--25°
C
1.5V
2
1.4
Ta=
75°
C
3
0
VDS=10V
1.8
Drain Current, ID -- A
4
ID -- VGS(th)
2.0
Ta=25°C
4.5
V
8.0V
Drain Current, ID -- A
5
2.5
V
6.0V
6
2
100
7
5
Coss
3
Crss
2
3
2
0.1
2
3
5
7
1.0
2
Drain Current, ID -- A
3
5
7
IT15274
10
1
2
3
4
5
6
7
8
9
Drain-to-Source Voltage, VDS -- V
10
IT15275
No. A1804-3/5
CPH3457
VGS -- Qg
3
2
VDS=15V
ID=3A
4.0
10
7
5
3.5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
4.5
3.0
2.5
2.0
1.5
1.0
0
0.5
1.0
1.5
2.0
2.5
Total Gate Charge, Qg -- nC
PD -- Ta
1.2
3.0
3.5
IT15276
IDP=12A (PW≤10ms)
ID=3A
1.0
7
5
3
2
0.1
7
5
3
2
0.5
0
3
2
SOA
10
0
1m ms
10 s
m
DC
s
10
0m
op
er
s
ati
on
(T
a=
Operation in this area
25
°C
is limited by RDS(on).
)
10
ms
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm)
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
5
HD15792
When mounted on ceramic substrate
(900mm2×0.8mm)
Power Dissipation, PD -- W
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
HD15789
No. A1804-4/5
CPH3457
Outline Drawing
CPH3457-TL-H, CPH3457-TL-W
Land Pattern Example
Mass (g) Unit
0.013 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
Note on usage :Since the CPH3457 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1804-5/5
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