RB521S30T1G, NSVRB521S30T1G, RB521S30T5G Schottky Barrier Diode These Schottky barrier diodes are designed for high−speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand−held and portable applications where space is limited. www.onsemi.com 30 V SCHOTTKY BARRIER DIODE Features • • • • • Extremely Fast Switching Speed Extremely Low Forward Voltage 0.5 V (max) @ IF = 200 mA Low Reverse Current NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* SOD−523 CASE 502 1 CATHODE MARKING DIAGRAM MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage VR 30 Vdc Forward Current DC IF 200 mA IFSM 1.0 A Peak Forward Surge Current (Note 1) ESD Rating: Class 1C per Human Body Model ESD Rating: Class C per Machine Model Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. 60 Hz for 1 cycle. Characteristic Total Device Dissipation FR−5 Board, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range 1 5M M G Symbol Max Unit PD 200 1.57 RqJA TJ, Tstg mW mW/°C °C/W 635 °C −55 to +125 5M M G G 2 = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device THERMAL CHARACTERISTICS 2 ANODE RB521S30T1G Package Shipping† SOD−523 4 mm Pitch (Pb−Free) 3,000/Tape & Reel NSVRB521S30T1G SOD−523 4 mm Pitch (Pb−Free) 3,000/Tape & Reel RB521S30T5G SOD−523 2 mm Pitch (Pb−Free) 8,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 2. FR−5 Minimum Pad. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 November, 2015 − Rev. 9 1 Publication Order Number: RB521S30T1/D RB521S30T1G, NSVRB521S30T1G, RB521S30T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Leakage (VR = 10 V) IR − − 30.0 mA Forward Voltage (IF = 200 mA) VF − − 0.50 Vdc IF, FORWARD CURRENT (A) 1 TA = 125°C 100m TA = 75°C 10m 1m 100m TA = 25°C 10m TA = −25°C 1m 0 0.1 0.2 0.3 0.4 0.5 0.6 VF, FORWARD VOLTAGE (V) Figure 1. Forward Characteristics IR, REVERSE CURRENT (A) 10m 1m TA = 125°C 100m TA = 75°C 10m TA = 25°C 1m 100n TA = −25°C 10n 1n 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Reverse Characteristics CT, TOATAL CAPACITANCE (pF) 20 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Total Capacitance www.onsemi.com 2 25 30 RB521S30T1G, NSVRB521S30T1G, RB521S30T5G PACKAGE DIMENSIONS SOD−523 CASE 502 ISSUE E −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E 2X b 0.08 1 M 2 X Y DIM A b c D E HE L L2 TOP VIEW A c HE MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE SIDE VIEW 2X L RECOMMENDED SOLDERING FOOTPRINT* 2X 1.80 0.48 2X 2X 0.40 L2 BOTTOM VIEW PACKAGE OUTLINE DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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