SiP11206DB

SiP11206DB
Vishay Siliconix
200 W 1/16th Brick IBC Demo Board using SiP11206
DESCRIPTION
SiP11206 is a half-bridge controller for intermediate bus
converters. While SiP11206 allows for overall better
efficiency through out the input voltage range, since its duty
cycle is fixed and is optimally set closer to its maximum
50 %. This also limits the input voltage range to a narrower
42 V to 55 V typical range because of the fixed duty cycle
the output voltage will have a proportionally wider voltage
swing. The SiP11206 is best for applications where
efficiency is key and a wider output voltage can be tolerated.
This demo board is a sixteenth-brick IBC power converter,
which plugs into a baseboard. The IBC board has the
following specifications and options:
• Narrow input voltage range (42 V to 55 V) with SiP11206
controller IC
• Nominal 12 V output, nominal load current 17 A
• PowerPAK® 1212-8 for primary and secondary power
MOSFETs
The baseboard contains input fuse, input/output terminals,
remote enable connectors, enable switch, input bulk
capacitors and output voltage measurement BNC
connector. The cutout in the baseboard allows for probing of
both sides of the IBC board. Photos are shown in figure 1.
Size comparison of Vishay 1/8th and 1/16th Brick Modules
Figure 1. Photos of Demo Board with PowerPAK MOSFET Options
This document details the following of the demo board:
1. Set up
2. Operation
3. Waveforms and performance curves
4. Schematic and BOM
5. Board layout
Document Number: 69086
S09-0324-Rev. B, 02-Mar-09
SET UP
The connection diagram for the demo board is depicted in
figure 2. Power and sense connections are provided at the
input and output for the main current path and for voltage
sensing for efficiency monitoring. Wire rated at 5 A should
be used for the input connections and 2 x 10 A rated wire
should be used for the output lines. The board can be
enabled/disabled manually by using the on-board switch or
by connecting a 0 V/5 V logic signal in the disable
connector. 5 V represents ‘disable’.
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SiP11206DB
Vishay Siliconix
Wiring lengths should be kept as short as possible,
especially at the output in order to avoid excessive voltage
drop across the cable length. The demo board has two
47 µF capacitors at the input to help minimize the issues
with long cables lengths used at the input. It should be noted
that with long cable lengths, the input voltage might be quite
oscillatory on power up, potentially leading to under-voltage
or the converter cycling in and out of operation until the
voltage becomes steady.
A small fan should be placed so that air is blown over both
sides of demo board in the direction shown. If the
temperature of the board exceeds ~ 105 ºC, the board will
be disabled by the over temperature shutdown mechanism.
Figure 2. Connection Diagram
(a) 48 V with 0 A, 1 DL, 2 VLOUT
OPERATION AND TEST RESULTS
The power circuit is a half-bridge converter controlled by the
SiP11206 IC. In the SiP11206, the converter duty cycle is
fixed and is set by R2. This version of the chip was used on
the demo board which maintains the highest overall
efficiency since the duty cycle is constant. It is typically set
to a value close to 50 % for maximum efficiency. The output
voltage is then determined by the input voltage and the
transformer turns ratio. In this demo board, the transformer
turns ratio is 4:1.
The controller IC is powered at startup by its own internal
9.5 V pre-regulator, which is driven from the line voltage.
Once converter switching commences, a separate 10.3 V
VCC supply is supplied from an auxiliary transformer
winding, and linear regulator R18, Q7, D8.
The secondary side synchronous rectifiers are self-driven,
but with a controlled gate voltage that does not vary with
input voltage. The result is improved efficiency and safer
drive voltages because the secondary gate drive is
generated locally and clamped to ~ 10 V through D9, R19,
C12 and D10. MOSFETs Q8 and Q3 are triggered by the
opposite transformer node, and the 10 V is coupled to the
synchronous rectifier gate less a threshold voltage drop.
A Schottky diode can be connected across the output filter
which improves efficiency for longer dead times. During
dead time, the synchronous rectifiers are off as there is no
transformer voltage available to turn them on. Hence,
without the Schottky diode present, the inductor current will
flow through the body diodes of the synchronous rectifiers.
The Schottky diode has a smaller voltage drop than the
body diodes, and so may enhance efficiency dependent on
deadtime, sync-fets, layout etc…. Some typical converter
waveforms are shown in figures 3 to 7.
(b) 48 V with 10 A, 1 DL, 2 VLOUT
Figure 3. Secondary Switching Waveforms
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Document Number: 69086
S09-0324-Rev. B, 02-Mar-09
SiP11206DB
Vishay Siliconix
Startup 0 A Load 1 VREF, 2 DL, 3 SS, 4 VOUT
Startup 10 A Load 1 VREF, 2 DL, 3 SS, 4 VOUT
Startup 0 A Load 1 VDET, 2 DL, 3 SS, 4 VOUT
Startup 10 A Load 1 VDET, 2 DL, 3 SS, 4 VOUT
Figure 4. Startup Waveforms
Shutdown 0 A Load 1 VREF, 2 DL, 3 SS, 4 VOUT
Shutdown 10 A Load 1 VREF, 2 DL, 3 SS, 4 VOUT
Shutdown 0 A Load 1 VDET, 2 DL, 3 SS, 4 VOUT
Shutdown 10 A Load 1 VDET, 2 DL, 3 SS, 4 VOUT
Figure 5. Shutdown Waveforms
Document Number: 69086
S09-0324-Rev. B, 02-Mar-09
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SiP11206DB
Vishay Siliconix
25 A Load 1 VREF, 2 DL, 3 SS, 4 VOUT
25 A Load 1 VDET, 2 DL, 3 SS, 4 VOUT
Figure 6. Over Current Protection/Hiccup Waveforms
No Load 33 mVpk-pk
10 A Load 47 mVpk-pk
Figure 7. Ripple Waveforms
97 %
16
VIN = 42 V
96 %
95 %
14
VIN = 48 V
94 %
12
93 %
VIN = 55 V
10
92 %
91 %
VOUT
Efficiency
Line Reg = 55 V
Line Reg = 48 V
90 %
89 %
8
Line Reg = 42 V
6
88 %
4
87 %
86 %
2
85 %
84 %
0
0
2
4
6
8
10
12
14
16
Output Current (A)
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18
20
0
2
4
6
8
10
12
14
16
18
20
Load
SiP11206 1/16th Brick Efficiency
1/16th Brick Line-Load Regulation
Figure 8. Efficiency
Figure 9. Line-Load Regulation
Document Number: 69086
S09-0324-Rev. B, 02-Mar-09
SiP11206DB
Vishay Siliconix
PCB LAYOUT
The demo board is an 10 layer board in the sixteenth-brick
form factor, manufactured with 2 oz copper on the outer
layers and 3 oz copper on the inner layers. The circuit
schematics for the demo board are illustrated in figures 10
and 11.
The transformer is a planar magnetic component with an
EI core. The primary winding has 4 turns, located on layers
2, 4, 5 and 7, with 1 turns per layer. Each secondary winding
has 2 turns, located on layers 1, 3, 6, and 8 with 2 turn per
layer. The auxiliary winding has 2 turns, consisting of 2 turns
on the bottom layer figure 12. Figure 13 shows the top
bottom of the base board.
Figure 10. Layers 1 to 4 of PCB (l-r)
Figure 11. Layers 5 to 8 of PCB (l-r)
Figure 12. Top and Bottom Layout
Figure 13. Top and Bottom PCB layout of Base Board
Document Number: 69086
S09-0324-Rev. B, 02-Mar-09
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SiP11206DB
Vishay Siliconix
The schematics are shown in figures 14 and 15, and parts list are shown in table 1 and 2.
TABLE 1 - IBC PARTS LIST - PART VALUES ARE FOR NARROW INPUT VERSION
Designator
Description
C1
Capacitor
Comment
Footprint
Quantity
Value
603
1
100 nF/25 V
C3
Capacitor
603
1
1 µF/16 V
C4
Capacitor
402
1
100 pF/25 V
C5
Capacitor
402
1
22 nF/25 V
C6
Capacitor
402
1
220 pF/25 V
C8
Capacitor
1812
1
4.7 µF/50 V
C10
Capacitor
1812
1
4.7 µF/50 V
C12
Capacitor
603
1
0.1 µF/25 V
C13
Capacitor
603
1
1 µF/16 V
C14
Capacitor
1812
1
22 µF/16 V
C15
Capacitor
1812
1
22 µF/16 V
C17
Capacitor
603
1
0.1 µF/25 V
C18
Capacitor
603
1
1 µF/16 V
D1
Default Diode
BAV19WS
SOD323/X.85
1
D5
Schottky Diode
SSC54
Diode SMC
1
D7
Schottky Diode
BAS170WS
SOD323/X.85
1
D8
Schottky Diode
BZX384B11-11V2 %
SOD323/X.85
1
D9
Schottky Diode
BAS170WS
SOD323/X.85
1
D10
Schottky Diode
BZX384B11-11V2 %
SOD323/X.85
1
L1
Inductor
IHLP2525CZ-01
IHLP2525CZ-01
1
0.47 µH
P1
VIN
Pin-through-hole
1
3102-3-00-xx-00-00-08-0
P2
On/Off
Pin-through-hole
1
3102-3-00-xx-00-00-08-0
P3
GND
Pin-through-hole
1
3102-3-00-xx-00-00-08-0
P4
12 VO
Pin-through-hole
1
3144-3-00-xx-00-00-08-0
P5
0V
Pin-through-hole
1
3144-3-00-xx-00-00-08-0
Q1
Synch MOSFET
Si7174DN
PowerPAK-1212-8-single
1
Q2
Synch MOSFET
Si7174DN
PowerPAK-1212-8-single
1
Q3
MOSFET
Si2308DS
SOT23
1
Q4
Synch MOSFET
Si7156DN
PowerPAK-1212-8-single
1
Q5
Synch MOSFET
Si7156DN
PowerPAK-1212-8-single
1
Q7
SOT23 NPN Silicon
ZXTN2031F
SOT23
1
Q8
MOSFET
Si2308DS
SOT23
1
R1
Resistor
402
1
R2
Resistor
402
1
80.6K
R3
Resistor
402
1
220R/1 %
R5
Resistor
402
1
33K/1 %
R6
Resistor
402
1
3.6K/1 %
R7
Resistor
402
1
10 R
R9
Resistor
402
1
100K
R10
Resistor
402
1
100K
R12
Resistor
402
1
82K
R15
Resistor
402
1
10K
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82K
Document Number: 69086
S09-0324-Rev. B, 02-Mar-09
SiP11206DB
Vishay Siliconix
TABLE 1 - IBC PARTS LIST - PART VALUES ARE FOR NARROW INPUT VERSION
Designator
Description
Footprint
Quantity
Value
R16
Resistor
Comment
402
1
10K
R17
Resistor
1206
1
0.01 R
R18
Resistor
402
1
1.5K/1 %
R19
Resistor
1.5K
T1
402
1
EI-18 Planar
E18-Planar-TFM
1
U1
PWM CTLR
SiP11206
MLP44-16-Pitch 0.65 mm
1
U2
Temperature Sensor
LM26-Thermal-Sensor
SO-G5/P.95
1
Z1
Micropower Voltage
Reference
LM4120-VREF
SO-G5/P.95
1
TABLE 2 - BASE BOARD PARTS LIST
Designator
Description
Comment
Footprint
Quantity
COAX-F
Coax-F Connector
1
H3183-05
1
Value
COAX-F
Coax-F Connector
2
H3183-05
1
COAX-F
Coax-F Connector
3
H3183-05
1
Cap2
Capacitor
C1
RB5-10.5
1
47 µF/160 V
Cap2
Capacitor
C2
RB5-10.5
1
100 pF
Cap Semi
Capacitor (Semiconductor SIM Model)
C3
CR3216-1206
1
100 pF
BAS16
Silicon Switching Diode for
High-Speed Switching
D1
SO-G3/C2.5
1
BAS16
Silicon Switching Diode for
High-Speed Switching
D2
SO-G3/C2.5
1
Fuse 2
Fuse
F1
CR3216-1206
1
COAX-F
Coaxial-Connection
J4
Test Point
Test Point
J8
0364-0-15-01-13-27-10-0
1
1
Test Point
Test Point
J9
0364-0-15-01-13-27-10-0
1
Header 6
Header, 6-Pin
JP1
1727056
1
Header 4
Header, 4-Pin
JP2
1727036
1
MHDR1X2
Header, 2-Pin
JP3
1727010
1
MMUN2213LT1G
NPN Bipolar Transistor
Q1
SO-G3/X.9
1
Res1
Resistor
R2
CR3216-1206
1
16K
1.5K
Res1
Resistor
R3
CR3216-1206
1
SW-SPDT
SPDT Toggle Switch
S1
ET01MD1
1
Test Point
Test Point
TP4
20-313137
1
Test Point
Test Point
TP1
20-313137
1
Test Point
Test Point
TP2
20-313137
1
Test Point
Test Point
TP3
20-313137
1
Document Number: 69086
S09-0324-Rev. B, 02-Mar-09
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SiP11206DB
Vishay Siliconix
+ VP
+ VP
+ VP
R9
0402
100K
C8
1812
4.7 µF 50 V
T1
R10
0402
100K
EI-18 Planar
10
1
C10
Q4
SD2
1812
4.7 µF 50 V
9
Q1
D1 BAV19WS
2
Aux
2
P5
SSC54
1
Si2308DS
R19 SGND
0402
1.5K
SGND
C12
0603
SGND
SGND
0V
D10
BZX384B11-11V2 %
0.1 µF 25 V
Aux-DC
2
2
1
Pzen
5
R18
0402
1.5K1 %
SGND
C17
0603
0.1 µF 25 V
D8
C18
PGND PGND
2
4
3
P4
1
C15
1812 12 VO
Q3
1
Q7
ZXTN2031F
PGND
R16
0402
10K
D5 IHLP2525CZ-01 C14
1812
D9
0.47 µH
2
PGND
1
22 µF
16 V
1
R7
0402
10R
1
R2
0402
80.6K
1%
5
1
2
3
1
1
VIN
2
VO
PGND
Q5
Si7156DN
D7
BAS170WS
Aux-R
3
REF
GND
ENA
PGND
R3
C4
C3
0402
R1
220R1 % R12 0603 0402 0402
100 pF
1 µF
0402
82K 25 V
16 V
82K
1%
R17
1206
0.01R
Rss+
5
4 VREG
Z1
1
2
3
PGND
SD
V+
4
2
HYST
GND
VTEMP
25 V
C5
0402
RDB 22 nF
Cosc
Rosc
1
2
3
VREF
SS
PGND
U2 LM26-Thermal-Sensor
8
7
6
5
C6 PGND
0402
220 P 25 V
PGND
RDB
COSC
ROSC
VREF
PGND
Q2
12
D
11 4 L
10
9
1
VCC
LX
COMP
U1
DL
CS
PGND
SiP11206
AGND
SS
8
Isen
1
GND
1
2
3
4
7
6
5
P3
Vcc
Si7174DN
22 µF
16 V
BAS170WS
SG2
3
DH
BST
VDET
VIN
R6
0402
3.6K1 %
75
6
7
68
SV+
L1
SCT
8
2
3
13
14
15
16
1
ON/OFF
PGND
SVREG
2
C1
Vdet
SG1
4
R5
0402
33K1 %
P2
0603
100 nF
LX
25 V
3
2
1
VIN
Boot
1
Si2308DS
1
2
3
2
1 R15 Q8
0402
10K
3
1
7
6
5
4
+ VP
8
7
6
5
P1
Si7174DN
DH
4
Si7156DN
SD8
0603
1 µF
16 V
C13
0603
1 µF 16 V
LM4120-VREF
PGND
BZX384B11-11V2 %
PGND
Figure 14. Schematic
TP3
TP1
JP2
4
3
2
1
+
F1
1
Header 4
JP1
J4
COAX-F
COAX-F
J9
COAX-F
1
COAX-F
SMB
C1
Cap2
47 µF
160 V
C3
Cap Semi
100 pF
C2
Fuse 2
Cap2
100 pF
2
1
2
3
4
5
6
Header 6
TB4
COAX-F
R2
Res1
16K
2
J8
COAX-F
2
D1
COAX-F
3
S1
R3
Res1
1.5K
1
SW-SPDT
BAS16
Q1
TP2
COAX-F
3
MMUN2213LT1G
COAX-F
D2
JP3
2
1
BAS16
MHDR1X2
Figure 15. Schematic - Base Board
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69086.
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Document Number: 69086
S09-0324-Rev. B, 02-Mar-09